KR101801070B1 - 펄스화된 열 전달 유체 흐름을 이용한 플라즈마 프로세싱 장치에서의 온도 제어 - Google Patents

펄스화된 열 전달 유체 흐름을 이용한 플라즈마 프로세싱 장치에서의 온도 제어 Download PDF

Info

Publication number
KR101801070B1
KR101801070B1 KR1020127027408A KR20127027408A KR101801070B1 KR 101801070 B1 KR101801070 B1 KR 101801070B1 KR 1020127027408 A KR1020127027408 A KR 1020127027408A KR 20127027408 A KR20127027408 A KR 20127027408A KR 101801070 B1 KR101801070 B1 KR 101801070B1
Authority
KR
South Korea
Prior art keywords
heat transfer
transfer fluid
temperature
chuck
valves
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020127027408A
Other languages
English (en)
Korean (ko)
Other versions
KR20130084221A (ko
Inventor
하미드 타바솔리
샤오핑 쩌우
셰인 씨. 네빌
더글라스 에이. 부치버거
페르난도 엠. 실베이라
브래드 엘. 메이스
티나 총
체탄 마하데느와라스와미
야사스위니 비. 파타르
두이 디. 뉴옌
월터 알. 메리
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Publication of KR20130084221A publication Critical patent/KR20130084221A/ko
Application granted granted Critical
Publication of KR101801070B1 publication Critical patent/KR101801070B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32908—Utilities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32926—Software, data control or modelling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2001—Maintaining constant desired temperature

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Automation & Control Theory (AREA)
  • Plasma Technology (AREA)
KR1020127027408A 2010-06-08 2011-06-03 펄스화된 열 전달 유체 흐름을 이용한 플라즈마 프로세싱 장치에서의 온도 제어 Active KR101801070B1 (ko)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US35277910P 2010-06-08 2010-06-08
US61/352,779 2010-06-08
US36223210P 2010-07-07 2010-07-07
US61/362,232 2010-07-07
US13/111,334 US8916793B2 (en) 2010-06-08 2011-05-19 Temperature control in plasma processing apparatus using pulsed heat transfer fluid flow
US13/111,334 2011-05-19
PCT/US2011/039182 WO2011156239A2 (en) 2010-06-08 2011-06-03 Temperature control in plasma processing apparatus using pulsed heat transfer fluid flow

Publications (2)

Publication Number Publication Date
KR20130084221A KR20130084221A (ko) 2013-07-24
KR101801070B1 true KR101801070B1 (ko) 2017-11-24

Family

ID=45098592

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020127027408A Active KR101801070B1 (ko) 2010-06-08 2011-06-03 펄스화된 열 전달 유체 흐름을 이용한 플라즈마 프로세싱 장치에서의 온도 제어

Country Status (6)

Country Link
US (2) US8916793B2 (enExample)
JP (1) JP6077995B2 (enExample)
KR (1) KR101801070B1 (enExample)
CN (1) CN102907180B (enExample)
TW (1) TWI445459B (enExample)
WO (1) WO2011156239A2 (enExample)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8916793B2 (en) 2010-06-08 2014-12-23 Applied Materials, Inc. Temperature control in plasma processing apparatus using pulsed heat transfer fluid flow
US9338871B2 (en) * 2010-01-29 2016-05-10 Applied Materials, Inc. Feedforward temperature control for plasma processing apparatus
US8880227B2 (en) 2010-05-27 2014-11-04 Applied Materials, Inc. Component temperature control by coolant flow control and heater duty cycle control
US8580693B2 (en) * 2010-08-27 2013-11-12 Applied Materials, Inc. Temperature enhanced electrostatic chucking in plasma processing apparatus
US10274270B2 (en) 2011-10-27 2019-04-30 Applied Materials, Inc. Dual zone common catch heat exchanger/chiller
JP5973731B2 (ja) 2012-01-13 2016-08-23 東京エレクトロン株式会社 プラズマ処理装置及びヒータの温度制御方法
CN103369810B (zh) * 2012-03-31 2016-02-10 中微半导体设备(上海)有限公司 一种等离子反应器
CN104715992B (zh) * 2013-12-13 2018-02-09 中微半导体设备(上海)有限公司 一种等离子体处理腔室及其冷却装置
JP6374301B2 (ja) 2013-12-24 2018-08-15 東京エレクトロン株式会社 ステージ、ステージの製造方法、熱交換器
JP6158111B2 (ja) * 2014-02-12 2017-07-05 東京エレクトロン株式会社 ガス供給方法及び半導体製造装置
JP6018606B2 (ja) * 2014-06-27 2016-11-02 東京エレクトロン株式会社 温度制御可能なステージを含むシステム、半導体製造装置及びステージの温度制御方法
JP5970040B2 (ja) * 2014-10-14 2016-08-17 東京エレクトロン株式会社 温度制御システム及び温度制御方法
US10490429B2 (en) * 2014-11-26 2019-11-26 Applied Materials, Inc. Substrate carrier using a proportional thermal fluid delivery system
US10515786B2 (en) * 2015-09-25 2019-12-24 Tokyo Electron Limited Mounting table and plasma processing apparatus
US11837479B2 (en) * 2016-05-05 2023-12-05 Applied Materials, Inc. Advanced temperature control for wafer carrier in plasma processing chamber
US10522377B2 (en) * 2016-07-01 2019-12-31 Lam Research Corporation System and method for substrate support feed-forward temperature control based on RF power
JP6832132B2 (ja) * 2016-11-08 2021-02-24 東京エレクトロン株式会社 供給装置及び基板処理装置
CN108257839B (zh) * 2016-12-29 2019-10-08 中微半导体设备(上海)股份有限公司 一种用于晶圆处理的反应腔
WO2018194807A1 (en) 2017-04-21 2018-10-25 Applied Materials, Inc. Improved electrode assembly
US10867812B2 (en) 2017-08-30 2020-12-15 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor manufacturing system and control method
US11164759B2 (en) 2018-05-10 2021-11-02 Micron Technology, Inc. Tools and systems for processing one or more semiconductor devices, and related methods
US10971384B2 (en) * 2018-09-13 2021-04-06 Lam Research Corporation Auto-calibrated process independent feedforward control for processing substrates
US12278094B2 (en) * 2020-05-08 2025-04-15 Applied Materials, Inc. Methods and apparatus for processing a substrate
JP7560215B2 (ja) 2021-03-17 2024-10-02 東京エレクトロン株式会社 プラズマ処理装置
JP7668682B2 (ja) 2021-06-02 2025-04-25 東京エレクトロン株式会社 温度制御装置および基板処理装置
US12300464B2 (en) * 2021-10-25 2025-05-13 Advanced Energy Industries, Inc. Robust tensorized shaped setpoint waveform streaming control
US20250319563A1 (en) * 2024-04-16 2025-10-16 Applied Materials, Inc. Dual zone pedestal coolant distribution system
US20250349575A1 (en) * 2024-05-09 2025-11-13 Applied Materials, Inc. Semiconductor processing chamber thermal control

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090065181A1 (en) * 2007-09-07 2009-03-12 Spx Cooling Technologies, Inc. System and method for heat exchanger fluid handling with atmospheric tower
US20100116788A1 (en) * 2008-11-12 2010-05-13 Lam Research Corporation Substrate temperature control by using liquid controlled multizone substrate support

Family Cites Families (70)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3147392B2 (ja) 1991-03-04 2001-03-19 宇部サイコン株式会社 熱可塑性樹脂組成物
JPH0796170A (ja) 1993-09-09 1995-04-11 Tokyo Electron Ltd 熱処理装置の温度制御方法
US5435145A (en) 1994-03-03 1995-07-25 General Electric Company Refrigerant flow rate control based on liquid level in simple vapor compression refrigeration cycles
US5548470A (en) * 1994-07-19 1996-08-20 International Business Machines Corporation Characterization, modeling, and design of an electrostatic chuck with improved wafer temperature uniformity
US5644467A (en) * 1995-09-28 1997-07-01 Applied Materials, Inc. Method and structure for improving gas breakdown resistance and reducing the potential of arcing in a electrostatic chuck
US5711851A (en) * 1996-07-12 1998-01-27 Micron Technology, Inc. Process for improving the performance of a temperature-sensitive etch process
KR100254793B1 (ko) 1997-12-08 2000-05-01 윤종용 반도체장치 제조설비의 케미컬 분사장치 및 그 장치에 사용되는폐액조
US6018932A (en) * 1998-01-07 2000-02-01 Premark Feg L.L.C. Gas exchange apparatus
US6125025A (en) * 1998-09-30 2000-09-26 Lam Research Corporation Electrostatic dechucking method and apparatus for dielectric workpieces in vacuum processors
US6368975B1 (en) 1999-07-07 2002-04-09 Applied Materials, Inc. Method and apparatus for monitoring a process by employing principal component analysis
US6776801B2 (en) * 1999-12-16 2004-08-17 Sail Star Inc. Dry cleaning method and apparatus
AU3084101A (en) 2000-01-05 2001-07-16 Tokyo Electron Limited A method of wafer band-edge measurement using transmission spectroscopy and a process for controlling the temperature uniformity of a wafer
JP2001237226A (ja) 2000-02-23 2001-08-31 Kobe Steel Ltd プラズマ処理装置
US6635117B1 (en) 2000-04-26 2003-10-21 Axcelis Technologies, Inc. Actively-cooled distribution plate for reducing reactive gas temperature in a plasma processing system
JP2002009049A (ja) 2000-06-21 2002-01-11 Matsushita Electric Ind Co Ltd プラズマ処理方法及びこれを用いたプラズマ処理装置
US6266968B1 (en) 2000-07-14 2001-07-31 Robert Walter Redlich Multiple evaporator refrigerator with expansion valve
US6606234B1 (en) 2000-09-05 2003-08-12 Saint-Gobain Ceramics & Plastics, Inc. Electrostatic chuck and method for forming an electrostatic chuck having porous regions for fluid flow
US7069984B2 (en) 2001-02-08 2006-07-04 Oriol Inc. Multi-channel temperature control system for semiconductor processing facilities
US6921724B2 (en) 2002-04-02 2005-07-26 Lam Research Corporation Variable temperature processes for tunable electrostatic chuck
JP2004063670A (ja) 2002-07-26 2004-02-26 Dainippon Screen Mfg Co Ltd 制御装置および制御方法並びに熱処理装置および熱処理方法
JP2004069933A (ja) 2002-08-05 2004-03-04 Hitachi Ltd 速度検出器および画像形成装置
JP4295490B2 (ja) 2002-11-15 2009-07-15 東京エレクトロン株式会社 処理装置並びに処理装置用のチラー制御方法及びチラー制御装置
US7221553B2 (en) 2003-04-22 2007-05-22 Applied Materials, Inc. Substrate support having heat transfer system
US9236279B2 (en) 2003-06-27 2016-01-12 Lam Research Corporation Method of dielectric film treatment
DE10336599B4 (de) 2003-08-08 2016-08-04 Daimler Ag Verfahren zur Ansteuerung eines Thermostaten in einem Kühlkreislauf eines Verbrennungsmotors
JP2005079415A (ja) 2003-09-02 2005-03-24 Hitachi High-Technologies Corp プラズマ処理装置
JP2005150173A (ja) 2003-11-12 2005-06-09 Hitachi High-Technologies Corp 真空処理装置
JP4381963B2 (ja) 2003-11-19 2009-12-09 パナソニック株式会社 プラズマ処理装置
JP2005210080A (ja) 2003-12-25 2005-08-04 Tokyo Electron Ltd 温度調節方法及び温度調節装置
JP4522783B2 (ja) 2004-08-03 2010-08-11 株式会社日立ハイテクノロジーズ プラズマ処理装置及びプラズマ処理方法
US7544251B2 (en) * 2004-10-07 2009-06-09 Applied Materials, Inc. Method and apparatus for controlling temperature of a substrate
TWI314842B (en) 2005-01-28 2009-09-11 Advanced Display Proc Eng Co Plasma processing apparatus
JP4551256B2 (ja) * 2005-03-31 2010-09-22 東京エレクトロン株式会社 載置台の温度制御装置及び載置台の温度制御方法及び処理装置及び載置台温度制御プログラム
JP2006339253A (ja) 2005-05-31 2006-12-14 Toshiba Corp プラズマ処理装置及びプラズマ処理方法
JP2006351887A (ja) 2005-06-17 2006-12-28 Hitachi High-Technologies Corp プラズマ処理装置
US7279427B2 (en) 2005-08-03 2007-10-09 Tokyo Electron, Ltd. Damage-free ashing process and system for post low-k etch
GB0516695D0 (en) 2005-08-15 2005-09-21 Boc Group Plc Microwave plasma reactor
JP4878801B2 (ja) 2005-09-26 2012-02-15 株式会社日立国際電気 基板処理装置、半導体装置の製造方法
JP4488999B2 (ja) 2005-10-07 2010-06-23 株式会社日立ハイテクノロジーズ エッチング方法およびエッチング装置
US7695633B2 (en) 2005-10-18 2010-04-13 Applied Materials, Inc. Independent control of ion density, ion energy distribution and ion dissociation in a plasma reactor
US20070091541A1 (en) 2005-10-20 2007-04-26 Applied Materials, Inc. Method of processing a workpiece in a plasma reactor using feed forward thermal control
US7368393B2 (en) 2006-04-20 2008-05-06 International Business Machines Corporation Chemical oxide removal of plasma damaged SiCOH low k dielectrics
US8226769B2 (en) * 2006-04-27 2012-07-24 Applied Materials, Inc. Substrate support with electrostatic chuck having dual temperature zones
JP4779807B2 (ja) 2006-05-29 2011-09-28 株式会社島津製作所 Ｉｃｐ発光分光分析装置
US20080060978A1 (en) * 2006-06-14 2008-03-13 Paul Wegner Handling and extracting hydrocarbons from tar sands
JP4815298B2 (ja) * 2006-07-31 2011-11-16 株式会社日立ハイテクノロジーズ プラズマ処理方法
US20080035306A1 (en) 2006-08-08 2008-02-14 White John M Heating and cooling of substrate support
JP4826483B2 (ja) 2007-01-19 2011-11-30 東京エレクトロン株式会社 プラズマ処理装置
JP4838197B2 (ja) 2007-06-05 2011-12-14 東京エレクトロン株式会社 プラズマ処理装置，電極温度調整装置，電極温度調整方法
US7998873B2 (en) 2007-06-15 2011-08-16 Taiwan Semiconductor Manufacturing Company, Ltd. Method for fabricating low-k dielectric and Cu interconnect
US20090095218A1 (en) 2007-10-16 2009-04-16 Novellus Systems, Inc. Temperature controlled showerhead
WO2009076576A2 (en) * 2007-12-12 2009-06-18 Eco2 Plastics Continuous system for processing particles
JP4486135B2 (ja) 2008-01-22 2010-06-23 東京エレクトロン株式会社 温度制御機構およびそれを用いた処理装置
JP5551343B2 (ja) 2008-05-14 2014-07-16 東京エレクトロン株式会社 誘導結合プラズマ処理装置
US8596336B2 (en) 2008-06-03 2013-12-03 Applied Materials, Inc. Substrate support temperature control
JP5433171B2 (ja) 2008-06-16 2014-03-05 株式会社日立ハイテクノロジーズ 試料温度の制御方法
KR20110075009A (ko) * 2008-10-06 2011-07-05 서노베이션즈 인코포레이션 과열방지 적응형 태양열 급탕장치
JP5374109B2 (ja) 2008-10-17 2013-12-25 株式会社アルバック 加熱真空処理方法
JP5655010B2 (ja) * 2009-02-11 2015-01-14 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 非接触基板処理のための方法及び装置
US8404572B2 (en) 2009-02-13 2013-03-26 Taiwan Semiconductor Manufacturing Co., Ltd Multi-zone temperature control for semiconductor wafer
US8916793B2 (en) 2010-06-08 2014-12-23 Applied Materials, Inc. Temperature control in plasma processing apparatus using pulsed heat transfer fluid flow
US9338871B2 (en) 2010-01-29 2016-05-10 Applied Materials, Inc. Feedforward temperature control for plasma processing apparatus
US8880227B2 (en) 2010-05-27 2014-11-04 Applied Materials, Inc. Component temperature control by coolant flow control and heater duty cycle control
US8608852B2 (en) * 2010-06-11 2013-12-17 Applied Materials, Inc. Temperature controlled plasma processing chamber component with zone dependent thermal efficiencies
US8980754B2 (en) 2011-07-20 2015-03-17 Applied Materials, Inc. Method of removing a photoresist from a low-k dielectric film
US8741775B2 (en) 2011-07-20 2014-06-03 Applied Materials, Inc. Method of patterning a low-K dielectric film
US8940642B2 (en) 2011-07-20 2015-01-27 Applied Materials, Inc. Method of multiple patterning of a low-K dielectric film
US8778207B2 (en) 2011-10-27 2014-07-15 Applied Materials, Inc. Plasma etch processes for boron-doped carbonaceous mask layers
US8871650B2 (en) 2011-10-28 2014-10-28 Applied Materials, Inc. Post etch treatment (PET) of a low-K dielectric film
US8937800B2 (en) 2012-04-24 2015-01-20 Applied Materials, Inc. Electrostatic chuck with advanced RF and temperature uniformity

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090065181A1 (en) * 2007-09-07 2009-03-12 Spx Cooling Technologies, Inc. System and method for heat exchanger fluid handling with atmospheric tower
US20100116788A1 (en) * 2008-11-12 2010-05-13 Lam Research Corporation Substrate temperature control by using liquid controlled multizone substrate support

Also Published As

Publication number Publication date
US9214315B2 (en) 2015-12-15
TWI445459B (zh) 2014-07-11
JP2013534695A (ja) 2013-09-05
WO2011156239A3 (en) 2012-01-26
WO2011156239A2 (en) 2011-12-15
KR20130084221A (ko) 2013-07-24
CN102907180A (zh) 2013-01-30
CN102907180B (zh) 2015-09-16
JP6077995B2 (ja) 2017-02-08
US8916793B2 (en) 2014-12-23
TW201215248A (en) 2012-04-01
US20150316941A1 (en) 2015-11-05
US20120132397A1 (en) 2012-05-31

Similar Documents

Publication Publication Date Title
KR101801070B1 (ko) 펄스화된 열 전달 유체 흐름을 이용한 플라즈마 프로세싱 장치에서의 온도 제어
KR101464936B1 (ko) 플라즈마 프로세싱 장치를 위한 피드포워드 온도 제어
TWI480918B (zh) 藉由冷卻劑流量控制及加熱器任務週期控制之組件溫度控制
KR102259258B1 (ko) 플라즈마 프로세싱 챔버 내의 웨이퍼 캐리어에 대한 진보된 온도 제어
US10928145B2 (en) Dual zone common catch heat exchanger/chiller
US10256123B2 (en) Component temperature control using a combination of proportional control valves and pulsed valves

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20121019

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20160427

Comment text: Request for Examination of Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20170406

Patent event code: PE09021S01D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20171017

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20171120

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20171121

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
PR1001 Payment of annual fee

Payment date: 20201102

Start annual number: 4

End annual number: 4

PR1001 Payment of annual fee

Payment date: 20211026

Start annual number: 5

End annual number: 5

PR1001 Payment of annual fee

Payment date: 20221025

Start annual number: 6

End annual number: 6

PR1001 Payment of annual fee

Payment date: 20231023

Start annual number: 7

End annual number: 7

PR1001 Payment of annual fee

Payment date: 20241029

Start annual number: 8

End annual number: 8