KR101788371B1 - 검출 장치, 임프린트 장치 및 물품의 제조 방법 - Google Patents

검출 장치, 임프린트 장치 및 물품의 제조 방법 Download PDF

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Publication number
KR101788371B1
KR101788371B1 KR1020150023025A KR20150023025A KR101788371B1 KR 101788371 B1 KR101788371 B1 KR 101788371B1 KR 1020150023025 A KR1020150023025 A KR 1020150023025A KR 20150023025 A KR20150023025 A KR 20150023025A KR 101788371 B1 KR101788371 B1 KR 101788371B1
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South Korea
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mark
image
pattern
patterns
substrate
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KR20150097415A (ko
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히로시 이나다
가즈히코 미시마
다카후미 미야하루
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캐논 가부시끼가이샤
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    • H01L21/0273—
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7038—Alignment for proximity or contact printer
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • H01L22/12—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30148—Semiconductor; IC; Wafer

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Quality & Reliability (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Theoretical Computer Science (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
KR1020150023025A 2014-02-18 2015-02-16 검출 장치, 임프린트 장치 및 물품의 제조 방법 Active KR101788371B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2014-028867 2014-02-18
JP2014028867A JP5932859B2 (ja) 2014-02-18 2014-02-18 検出装置、インプリント装置、および物品の製造方法

Publications (2)

Publication Number Publication Date
KR20150097415A KR20150097415A (ko) 2015-08-26
KR101788371B1 true KR101788371B1 (ko) 2017-10-19

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KR1020150023025A Active KR101788371B1 (ko) 2014-02-18 2015-02-16 검출 장치, 임프린트 장치 및 물품의 제조 방법

Country Status (5)

Country Link
US (1) US9595447B2 (https=)
JP (1) JP5932859B2 (https=)
KR (1) KR101788371B1 (https=)
CN (1) CN104849956B (https=)
TW (1) TWI579941B (https=)

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NL2005975A (en) * 2010-03-03 2011-09-06 Asml Netherlands Bv Imprint lithography.
JP6884515B2 (ja) 2016-05-10 2021-06-09 キヤノン株式会社 位置検出方法、インプリント装置及び物品の製造方法
JP6207671B1 (ja) * 2016-06-01 2017-10-04 キヤノン株式会社 パターン形成装置、基板配置方法及び物品の製造方法
JP7089348B2 (ja) * 2017-07-28 2022-06-22 キヤノン株式会社 インプリント装置、インプリント方法および物品製造方法
JP6937203B2 (ja) 2017-09-14 2021-09-22 キオクシア株式会社 インプリント装置、インプリント方法および半導体装置の製造方法
US10705435B2 (en) * 2018-01-12 2020-07-07 Globalfoundries Inc. Self-referencing and self-calibrating interference pattern overlay measurement
JP7038562B2 (ja) * 2018-02-13 2022-03-18 キヤノン株式会社 検出装置、リソグラフィ装置、および物品の製造方法
JP2020154063A (ja) * 2019-03-19 2020-09-24 キオクシア株式会社 アライメントマーク、インプリント方法、半導体装置の製造方法、及び位置合わせ装置
US11256177B2 (en) 2019-09-11 2022-02-22 Kla Corporation Imaging overlay targets using Moiré elements and rotational symmetry arrangements
KR102793516B1 (ko) * 2019-12-03 2025-04-11 가부시키가이샤 에바라 세이사꾸쇼 연마 장치 및 연마 방법
US11686576B2 (en) 2020-06-04 2023-06-27 Kla Corporation Metrology target for one-dimensional measurement of periodic misregistration
US11796925B2 (en) 2022-01-03 2023-10-24 Kla Corporation Scanning overlay metrology using overlay targets having multiple spatial frequencies
US12032300B2 (en) 2022-02-14 2024-07-09 Kla Corporation Imaging overlay with mutually coherent oblique illumination
JP2023135179A (ja) 2022-03-15 2023-09-28 キヤノン株式会社 物体の位置合わせ方法、インプリント方法、物品製造方法、検出装置、インプリント装置、型及び基板
US12487190B2 (en) 2022-03-30 2025-12-02 Kla Corporation System and method for isolation of specific fourier pupil frequency in overlay metrology
US12422363B2 (en) 2022-03-30 2025-09-23 Kla Corporation Scanning scatterometry overlay metrology
JP2024030557A (ja) * 2022-08-24 2024-03-07 キヤノン株式会社 検出装置、リソグラフィー装置および物品製造方法
US12235588B2 (en) 2023-02-16 2025-02-25 Kla Corporation Scanning overlay metrology with high signal to noise ratio

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US20080094629A1 (en) * 2006-10-20 2008-04-24 Wei Wu Optical gratings, lithography tools including such optical gratings and methods for using same for alignment
US20110243300A1 (en) 2010-03-30 2011-10-06 Fujifilm Corporation Diffraction grating and alignment method thereof, and radiation imaging system

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JPH06307811A (ja) 1993-04-28 1994-11-04 Soltec:Kk 位置ずれ及びギャップ検出方法
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JP4074867B2 (ja) * 2003-11-04 2008-04-16 エーエスエムエル ネザーランズ ビー．ブイ． 第１及び第２位置合せマークの相対位置を計測する方法及び装置
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JP2006259153A (ja) * 2005-03-16 2006-09-28 Fuji Photo Film Co Ltd アラインメント精度評価方法及び装置
US20080094629A1 (en) * 2006-10-20 2008-04-24 Wei Wu Optical gratings, lithography tools including such optical gratings and methods for using same for alignment
US20110243300A1 (en) 2010-03-30 2011-10-06 Fujifilm Corporation Diffraction grating and alignment method thereof, and radiation imaging system

Also Published As

Publication number Publication date
US20150235880A1 (en) 2015-08-20
CN104849956B (zh) 2020-04-28
JP2015154008A (ja) 2015-08-24
KR20150097415A (ko) 2015-08-26
JP5932859B2 (ja) 2016-06-08
TWI579941B (zh) 2017-04-21
US9595447B2 (en) 2017-03-14
TW201539600A (zh) 2015-10-16
CN104849956A (zh) 2015-08-19

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