KR101788021B1 - 열압착 본딩장치 - Google Patents

열압착 본딩장치 Download PDF

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Publication number
KR101788021B1
KR101788021B1 KR1020160098627A KR20160098627A KR101788021B1 KR 101788021 B1 KR101788021 B1 KR 101788021B1 KR 1020160098627 A KR1020160098627 A KR 1020160098627A KR 20160098627 A KR20160098627 A KR 20160098627A KR 101788021 B1 KR101788021 B1 KR 101788021B1
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KR
South Korea
Prior art keywords
film
unit
vision
punching
chip
Prior art date
Application number
KR1020160098627A
Other languages
English (en)
Korean (ko)
Other versions
KR20170056415A (ko
Inventor
기영식
윤웅환
김영하
Original Assignee
한미반도체 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 한미반도체 주식회사 filed Critical 한미반도체 주식회사
Priority to JP2016192039A priority Critical patent/JP6673794B2/ja
Priority to TW105131789A priority patent/TWI673806B/zh
Priority to CN201611000668.1A priority patent/CN106981444B/zh
Publication of KR20170056415A publication Critical patent/KR20170056415A/ko
Application granted granted Critical
Publication of KR101788021B1 publication Critical patent/KR101788021B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
    • H01L21/447—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428 involving the application of pressure, e.g. thermo-compression bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67144—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67712—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrate being handled substantially vertically
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020160098627A 2015-11-12 2016-08-02 열압착 본딩장치 KR101788021B1 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2016192039A JP6673794B2 (ja) 2015-11-12 2016-09-29 熱圧着ボンディング装置
TW105131789A TWI673806B (zh) 2015-11-12 2016-09-30 熱壓鍵合裝置
CN201611000668.1A CN106981444B (zh) 2015-11-12 2016-11-14 热压键合装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020150158930 2015-11-12
KR20150158930 2015-11-12

Publications (2)

Publication Number Publication Date
KR20170056415A KR20170056415A (ko) 2017-05-23
KR101788021B1 true KR101788021B1 (ko) 2017-10-23

Family

ID=59050366

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020160098627A KR101788021B1 (ko) 2015-11-12 2016-08-02 열압착 본딩장치

Country Status (2)

Country Link
KR (1) KR101788021B1 (zh)
TW (1) TWI673806B (zh)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102323539B1 (ko) * 2017-06-29 2021-11-09 한미반도체 주식회사 열압착 본딩장치 및 열압착 본딩방법
TWI685905B (zh) * 2017-07-12 2020-02-21 日商新川股份有限公司 接合裝置和接合方法
KR102401361B1 (ko) * 2017-07-19 2022-05-24 세메스 주식회사 다이 본딩 장치
KR102401362B1 (ko) * 2017-10-19 2022-05-24 세메스 주식회사 다이 본딩 장치
TWI703662B (zh) * 2017-12-15 2020-09-01 日商新川股份有限公司 封裝裝置以及穿孔針
US11848219B2 (en) * 2018-04-26 2023-12-19 Shinkawa Ltd. Mounting apparatus and film supply apparatus
KR20210030016A (ko) 2019-09-09 2021-03-17 한철희 반도체 칩 열압착 본딩 장치
KR102619955B1 (ko) * 2020-07-16 2024-01-02 가부시키가이샤 신가와 실장 장치

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012028594A (ja) * 2010-07-26 2012-02-09 Shinko Electric Ind Co Ltd 電子部品実装装置及び電子部品の実装方法
KR101275133B1 (ko) * 2012-05-11 2013-06-17 한미반도체 주식회사 플립칩 본딩장치

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4119098B2 (ja) * 2001-02-27 2008-07-16 芝浦メカトロニクス株式会社 部品保持ヘッド、及びそれを用いた部品実装装置並びに部品実装方法
JP5054933B2 (ja) * 2006-05-23 2012-10-24 ルネサスエレクトロニクス株式会社 半導体装置の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012028594A (ja) * 2010-07-26 2012-02-09 Shinko Electric Ind Co Ltd 電子部品実装装置及び電子部品の実装方法
KR101275133B1 (ko) * 2012-05-11 2013-06-17 한미반도체 주식회사 플립칩 본딩장치

Also Published As

Publication number Publication date
KR20170056415A (ko) 2017-05-23
TWI673806B (zh) 2019-10-01
TW201724304A (zh) 2017-07-01

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