KR101784752B1 - 타겟 프로세싱 유닛 - Google Patents

타겟 프로세싱 유닛 Download PDF

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Publication number
KR101784752B1
KR101784752B1 KR1020167009273A KR20167009273A KR101784752B1 KR 101784752 B1 KR101784752 B1 KR 101784752B1 KR 1020167009273 A KR1020167009273 A KR 1020167009273A KR 20167009273 A KR20167009273 A KR 20167009273A KR 101784752 B1 KR101784752 B1 KR 101784752B1
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KR
South Korea
Prior art keywords
conduits
conduit
plane
projection lens
processing unit
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Korean (ko)
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KR20160055852A (ko
Inventor
조한 주스트 코닝
데이비드 조한네스 반 덴 베르겐
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마퍼 리쏘그라피 아이피 비.브이.
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Publication of KR20160055852A publication Critical patent/KR20160055852A/ko
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Assigned to 에이에스엠엘 네델란즈 비.브이. reassignment 에이에스엠엘 네델란즈 비.브이. 권리의 전부이전등록 Assignors: 마퍼 리쏘그라피 아이피 비.브이.
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/023—Means for mechanically adjusting components not otherwise provided for
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J19/12—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electromagnetic waves
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70825—Mounting of individual elements, e.g. mounts, holders or supports
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70833—Mounting of optical systems, e.g. mounting of illumination system, projection system or stage systems on base-plate or ground
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G03F7/70891—Temperature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/709—Vibration, e.g. vibration detection, compensation, suppression or isolation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70975—Assembly, maintenance, transport or storage of apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/10—Lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3007—Electron or ion-optical systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe

Landscapes

  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • General Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Toxicology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Electromagnetism (AREA)
  • General Health & Medical Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electron Beam Exposure (AREA)
KR1020167009273A 2013-09-07 2014-09-08 타겟 프로세싱 유닛 Active KR101784752B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361875016P 2013-09-07 2013-09-07
US61/875,016 2013-09-07
PCT/EP2014/069116 WO2015032955A1 (en) 2013-09-07 2014-09-08 Target processing unit

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020177020391A Division KR102124913B1 (ko) 2013-09-07 2014-09-08 타겟 프로세싱 유닛

Publications (2)

Publication Number Publication Date
KR20160055852A KR20160055852A (ko) 2016-05-18
KR101784752B1 true KR101784752B1 (ko) 2017-11-06

Family

ID=51492355

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020167009273A Active KR101784752B1 (ko) 2013-09-07 2014-09-08 타겟 프로세싱 유닛
KR1020177020391A Active KR102124913B1 (ko) 2013-09-07 2014-09-08 타겟 프로세싱 유닛

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020177020391A Active KR102124913B1 (ko) 2013-09-07 2014-09-08 타겟 프로세싱 유닛

Country Status (6)

Country Link
US (2) US9263234B2 (https=)
JP (2) JP6224252B2 (https=)
KR (2) KR101784752B1 (https=)
CN (2) CN107272352B (https=)
NL (2) NL2013437B1 (https=)
WO (1) WO2015032955A1 (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9703213B2 (en) * 2011-09-12 2017-07-11 Mapper Lithography Ip B.V. Substrate processing apparatus
US9349567B2 (en) * 2013-05-10 2016-05-24 Hitachi High-Technologies Corporation Charged particle beam device
DE102016217285A1 (de) * 2016-09-12 2018-03-15 Carl Zeiss Smt Gmbh Vorrichtung zur übertragung von elektrischen signalen sowie lithographieanlage
WO2018074306A1 (ja) * 2016-10-17 2018-04-26 株式会社ニコン 露光システム及びリソグラフィシステム
US10905025B1 (en) * 2019-06-12 2021-01-26 Facebook, Inc. Interconnection module and server rack
CN111239916B (zh) * 2020-02-12 2021-05-18 烽火通信科技股份有限公司 光纤背板上光纤连接器用的清洁工具及清洁方法
KR102467191B1 (ko) * 2020-03-11 2022-11-16 주식회사 포스코 광 점퍼 코드 안전 장치 및 그를 이용한 전력 계통 시스템
CN113495436B (zh) * 2021-07-13 2023-12-29 江门市和盈新材料科技有限公司 一种光电子元件智能制造的光刻机
EP4290550A1 (en) * 2022-06-10 2023-12-13 ASML Netherlands B.V. Electron-optical device
CN121816638A (zh) * 2023-09-12 2026-04-07 朗姆研究公司 在气体输送系统中暴露于大气的防止

Citations (2)

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US20110193573A1 (en) 2009-12-31 2011-08-11 Mapper Lithography Ip B.V. Integrated sensor system
WO2013171216A1 (en) 2012-05-14 2013-11-21 Mapper Lithography Ip B.V. Charged particle multi-beamlet lithography system and cooling arrangement manufacturing method

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AU3794097A (en) 1996-06-10 1998-01-07 Holographic Lithography Systems, Inc. Holographic patterning method and tool for production environments
US6714278B2 (en) * 1996-11-25 2004-03-30 Nikon Corporation Exposure apparatus
TW591694B (en) * 2001-02-13 2004-06-11 Nikon Corp Specification determining method, making method and adjusting method of projection optical system, exposure apparatus and making method thereof, and computer system
US6756706B2 (en) 2002-01-18 2004-06-29 Nikon Corporation Method and apparatus for cooling power supply wires used to drive stages in electron beam lithography machines
JP2004055933A (ja) 2002-07-22 2004-02-19 Advantest Corp 電子ビーム露光装置、及び電子ビーム計測モジュール
JP2005106166A (ja) 2003-09-30 2005-04-21 Nikon Corp アクティブ除振装置及び露光装置
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US9703213B2 (en) * 2011-09-12 2017-07-11 Mapper Lithography Ip B.V. Substrate processing apparatus
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JP5936484B2 (ja) * 2012-08-20 2016-06-22 株式会社日立ハイテクノロジーズ 荷電粒子線装置及び試料観察方法

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Publication number Priority date Publication date Assignee Title
US20110193573A1 (en) 2009-12-31 2011-08-11 Mapper Lithography Ip B.V. Integrated sensor system
WO2013171216A1 (en) 2012-05-14 2013-11-21 Mapper Lithography Ip B.V. Charged particle multi-beamlet lithography system and cooling arrangement manufacturing method

Also Published As

Publication number Publication date
JP2016530728A (ja) 2016-09-29
US20150090895A1 (en) 2015-04-02
NL2013437A (en) 2015-03-10
US9941093B2 (en) 2018-04-10
JP6224252B2 (ja) 2017-11-01
KR102124913B1 (ko) 2020-06-22
NL2013438B1 (en) 2016-05-18
US20160126055A1 (en) 2016-05-05
CN107272352B (zh) 2021-02-02
CN105745577B (zh) 2018-01-23
NL2013437B1 (en) 2016-05-18
CN107272352A (zh) 2017-10-20
CN105745577A (zh) 2016-07-06
WO2015032955A1 (en) 2015-03-12
JP6580634B2 (ja) 2019-09-25
KR20170087970A (ko) 2017-07-31
US9263234B2 (en) 2016-02-16
KR20160055852A (ko) 2016-05-18
NL2013438A (en) 2015-03-10
JP2017224828A (ja) 2017-12-21

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