KR101777253B1 - 플라즈마 처리 장치 및 플라즈마 처리 방법 - Google Patents

플라즈마 처리 장치 및 플라즈마 처리 방법 Download PDF

Info

Publication number
KR101777253B1
KR101777253B1 KR1020150187518A KR20150187518A KR101777253B1 KR 101777253 B1 KR101777253 B1 KR 101777253B1 KR 1020150187518 A KR1020150187518 A KR 1020150187518A KR 20150187518 A KR20150187518 A KR 20150187518A KR 101777253 B1 KR101777253 B1 KR 101777253B1
Authority
KR
South Korea
Prior art keywords
voltage
electrode
value
peak
sample
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020150187518A
Other languages
English (en)
Korean (ko)
Other versions
KR20160086270A (ko
Inventor
다카오 아라세
마사히토 모리
겐에츠 요코가와
유스케 다케가와
다카마사 이치노
Original Assignee
가부시키가이샤 히다치 하이테크놀로지즈
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 히다치 하이테크놀로지즈 filed Critical 가부시키가이샤 히다치 하이테크놀로지즈
Publication of KR20160086270A publication Critical patent/KR20160086270A/ko
Application granted granted Critical
Publication of KR101777253B1 publication Critical patent/KR101777253B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32311—Circuits specially adapted for controlling the microwave discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support

Landscapes

  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
KR1020150187518A 2015-01-09 2015-12-28 플라즈마 처리 장치 및 플라즈마 처리 방법 Active KR101777253B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2015002723 2015-01-09
JPJP-P-2015-002723 2015-01-09
JP2015200701A JP6567943B2 (ja) 2015-01-09 2015-10-09 プラズマ処理装置およびプラズマ処理方法
JPJP-P-2015-200701 2015-10-09

Publications (2)

Publication Number Publication Date
KR20160086270A KR20160086270A (ko) 2016-07-19
KR101777253B1 true KR101777253B1 (ko) 2017-09-11

Family

ID=56414848

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020150187518A Active KR101777253B1 (ko) 2015-01-09 2015-12-28 플라즈마 처리 장치 및 플라즈마 처리 방법

Country Status (3)

Country Link
JP (1) JP6567943B2 (enrdf_load_stackoverflow)
KR (1) KR101777253B1 (enrdf_load_stackoverflow)
TW (1) TWI604496B (enrdf_load_stackoverflow)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6778639B2 (ja) * 2017-03-08 2020-11-04 東京エレクトロン株式会社 高周波発生器及びプラズマ処理装置
WO2018173095A1 (ja) * 2017-03-21 2018-09-27 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP7134695B2 (ja) * 2018-04-27 2022-09-12 東京エレクトロン株式会社 プラズマ処理装置、及び電源制御方法
US10896808B2 (en) * 2018-07-25 2021-01-19 Lam Research Corporation Maintenance mode power supply system
JP7234036B2 (ja) * 2019-05-28 2023-03-07 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
KR102490292B1 (ko) * 2019-08-05 2023-01-20 주식회사 히타치하이테크 플라스마 처리 장치
JP7398909B2 (ja) * 2019-09-12 2023-12-15 東京エレクトロン株式会社 静電吸着方法及びプラズマ処理装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008034669A (ja) * 2006-07-31 2008-02-14 Hitachi High-Technologies Corp プラズマ処理装置およびプラズマ処理方法
JP2011061048A (ja) * 2009-09-11 2011-03-24 Hitachi High-Technologies Corp プラズマ処理装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6361645B1 (en) * 1998-10-08 2002-03-26 Lam Research Corporation Method and device for compensating wafer bias in a plasma processing chamber
JP4468194B2 (ja) 2005-01-28 2010-05-26 株式会社日立ハイテクノロジーズ プラズマ処理方法およびプラズマ処理装置
JP5491648B2 (ja) * 2006-10-06 2014-05-14 東京エレクトロン株式会社 プラズマエッチング装置およびプラズマエッチング方法
JP5372419B2 (ja) 2008-06-25 2013-12-18 株式会社日立ハイテクノロジーズ プラズマ処理装置及びプラズマ処理方法
JP2012129429A (ja) * 2010-12-17 2012-07-05 Hitachi High-Technologies Corp プラズマ処理方法
JP5802454B2 (ja) 2011-06-30 2015-10-28 株式会社日立ハイテクノロジーズ プラズマ処理方法
US9076831B2 (en) * 2011-11-04 2015-07-07 Lam Research Corporation Substrate clamping system and method for operating the same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008034669A (ja) * 2006-07-31 2008-02-14 Hitachi High-Technologies Corp プラズマ処理装置およびプラズマ処理方法
JP2011061048A (ja) * 2009-09-11 2011-03-24 Hitachi High-Technologies Corp プラズマ処理装置

Also Published As

Publication number Publication date
JP6567943B2 (ja) 2019-08-28
KR20160086270A (ko) 2016-07-19
TW201637066A (zh) 2016-10-16
JP2016131235A (ja) 2016-07-21
TWI604496B (zh) 2017-11-01

Similar Documents

Publication Publication Date Title
KR101777253B1 (ko) 플라즈마 처리 장치 및 플라즈마 처리 방법
US9887070B2 (en) Plasma processing apparatus and plasma processing method
US12142452B2 (en) Systems and methods for monitoring faults, anomalies, and other characteristics of a switched mode ion energy distribution system
JP6986113B2 (ja) 修正された周期的電圧関数を電気ノードに提供するための装置およびコンピュータ読み取り可能な記憶媒体
KR101761493B1 (ko) 스위칭 모드 이온 에너지 분포 시스템을 교정하기 위한 시스템 및 방법
US11011349B2 (en) System, method, and apparatus for controlling ion energy distribution in plasma processing systems
US10250217B2 (en) Method for impedance matching of plasma processing apparatus
JP5372419B2 (ja) プラズマ処理装置及びプラズマ処理方法
US20150114563A1 (en) Plasma processing apparatus and probe apparatus
US20120319584A1 (en) Method of controlling the switched mode ion energy distribution system
KR101952563B1 (ko) 스위칭 모드 이온 에너지 분포 시스템을 제어하는 방법
JPWO2002059954A1 (ja) プラズマ処理装置およびプラズマ処理方法
US12255048B2 (en) Apparatus to control ion energy
JP2023525768A (ja) スイッチモードバイアスシステムを使用した表面電荷および電力フィードバックならびに制御

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 20151228

PA0201 Request for examination
PG1501 Laying open of application
E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20170116

Patent event code: PE09021S01D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20170817

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20170905

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20170906

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
PR1001 Payment of annual fee

Payment date: 20210823

Start annual number: 5

End annual number: 5

PR1001 Payment of annual fee

Payment date: 20230821

Start annual number: 7

End annual number: 7

PR1001 Payment of annual fee

Payment date: 20240821

Start annual number: 8

End annual number: 8