KR101754435B1 - 발광다이오드칩 - Google Patents

발광다이오드칩 Download PDF

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Publication number
KR101754435B1
KR101754435B1 KR1020127005143A KR20127005143A KR101754435B1 KR 101754435 B1 KR101754435 B1 KR 101754435B1 KR 1020127005143 A KR1020127005143 A KR 1020127005143A KR 20127005143 A KR20127005143 A KR 20127005143A KR 101754435 B1 KR101754435 B1 KR 101754435B1
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South Korea
Prior art keywords
region
semiconductor body
trench
emitting diode
diode chip
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Expired - Fee Related
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KR1020127005143A
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English (en)
Korean (ko)
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KR20120043030A (ko
Inventor
마르쿠스 마우테
토니 알브레크트
안나 카스프르자크-자블로카
Original Assignee
오스람 옵토 세미컨덕터스 게엠베하
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Publication of KR20120043030A publication Critical patent/KR20120043030A/ko
Application granted granted Critical
Publication of KR101754435B1 publication Critical patent/KR101754435B1/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/034—Manufacture or treatment of coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials

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  • Led Device Packages (AREA)
KR1020127005143A 2009-07-31 2010-07-13 발광다이오드칩 Expired - Fee Related KR101754435B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102009035429.8 2009-07-31
DE102009035429A DE102009035429A1 (de) 2009-07-31 2009-07-31 Leuchtdiodenchip
PCT/EP2010/060077 WO2011012446A1 (de) 2009-07-31 2010-07-13 Leuchtdiodenchip

Publications (2)

Publication Number Publication Date
KR20120043030A KR20120043030A (ko) 2012-05-03
KR101754435B1 true KR101754435B1 (ko) 2017-07-05

Family

ID=42983717

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020127005143A Expired - Fee Related KR101754435B1 (ko) 2009-07-31 2010-07-13 발광다이오드칩

Country Status (8)

Country Link
US (1) US20120267662A1 (enExample)
EP (1) EP2460190B1 (enExample)
JP (1) JP2013501350A (enExample)
KR (1) KR101754435B1 (enExample)
CN (1) CN102473797A (enExample)
DE (1) DE102009035429A1 (enExample)
TW (1) TWI446581B (enExample)
WO (1) WO2011012446A1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101872830A (zh) * 2010-06-10 2010-10-27 厦门市三安光电科技有限公司 自带短路保护功能的垂直发光二极管
US9070851B2 (en) * 2010-09-24 2015-06-30 Seoul Semiconductor Co., Ltd. Wafer-level light emitting diode package and method of fabricating the same
TWI577049B (zh) * 2013-03-18 2017-04-01 晶元光電股份有限公司 發光元件
CN103996773B (zh) * 2014-06-06 2016-09-28 厦门市三安光电科技有限公司 一种倒装发光二极管结构及其制作方法
JP6537883B2 (ja) 2015-05-14 2019-07-03 スタンレー電気株式会社 半導体発光素子および半導体発光素子アレイ
DE102015120089A1 (de) * 2015-11-19 2017-05-24 Osram Opto Semiconductors Gmbh Leuchtdiodenchip und Verfahren zur Herstellung eines Leuchtdiodenchips
WO2017217308A1 (ja) 2016-06-17 2017-12-21 株式会社村田製作所 電子部品、振動板、電子機器および電子部品の製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002280602A (ja) * 2001-03-21 2002-09-27 Toshiba Corp 垂直共振器型発光ダイオード及びその発光ダイオードを用いた光送信モジュール
JP2007123436A (ja) * 2005-10-26 2007-05-17 Toshiba Corp 半導体発光素子およびその製造方法
JP2009105123A (ja) * 2007-10-22 2009-05-14 Showa Denko Kk 発光ダイオードおよびその製造方法
US20090129417A1 (en) * 2006-06-08 2009-05-21 Sony Corporation Surface-Emitting Laser Diode and Method of Manufacturing the Same

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07131070A (ja) * 1993-10-28 1995-05-19 Victor Co Of Japan Ltd 半導体発光素子及び半導体発光素子アレイ
DE4427840A1 (de) * 1994-07-28 1996-02-01 Osa Elektronik Gmbh Verfahren zur Effizienzerhöhung von A¶I¶¶I¶¶I¶B¶V¶ - Halbleiter-Chips
JP3241976B2 (ja) * 1995-10-16 2001-12-25 株式会社東芝 半導体発光素子
TW393785B (en) * 1997-09-19 2000-06-11 Siemens Ag Method to produce many semiconductor-bodies
JP4050444B2 (ja) * 2000-05-30 2008-02-20 信越半導体株式会社 発光素子及びその製造方法
JP4116387B2 (ja) * 2002-09-30 2008-07-09 株式会社東芝 半導体発光素子
DE10245631B4 (de) * 2002-09-30 2022-01-20 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterbauelement
JP2007081010A (ja) * 2005-09-13 2007-03-29 Matsushita Electric Ind Co Ltd 発光素子
US20070221613A1 (en) * 2006-03-23 2007-09-27 Gutsche Martin U Structure for stopping mechanical cracks in a substrate wafer, use of the structure and a method for producing the structure
JP5082504B2 (ja) * 2006-03-31 2012-11-28 日亜化学工業株式会社 発光素子及び発光素子の製造方法
JP2008004587A (ja) * 2006-06-20 2008-01-10 Sharp Corp 半導体発光素子及びその製造方法並びに化合物半導体発光ダイオード
CN101244533B (zh) * 2007-02-16 2010-09-15 香港应用科技研究院有限公司 超平坦化学机械抛光技术之方法及使用该方法制造的半导体组件

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002280602A (ja) * 2001-03-21 2002-09-27 Toshiba Corp 垂直共振器型発光ダイオード及びその発光ダイオードを用いた光送信モジュール
JP2007123436A (ja) * 2005-10-26 2007-05-17 Toshiba Corp 半導体発光素子およびその製造方法
US20090129417A1 (en) * 2006-06-08 2009-05-21 Sony Corporation Surface-Emitting Laser Diode and Method of Manufacturing the Same
JP2009105123A (ja) * 2007-10-22 2009-05-14 Showa Denko Kk 発光ダイオードおよびその製造方法

Also Published As

Publication number Publication date
WO2011012446A1 (de) 2011-02-03
US20120267662A1 (en) 2012-10-25
TWI446581B (zh) 2014-07-21
CN102473797A (zh) 2012-05-23
KR20120043030A (ko) 2012-05-03
JP2013501350A (ja) 2013-01-10
EP2460190B1 (de) 2017-03-15
TW201115786A (en) 2011-05-01
DE102009035429A1 (de) 2011-02-03
EP2460190A1 (de) 2012-06-06

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