KR101751593B1 - 리소그래피 장치, 결정 방법 및 물품의 제조 방법 - Google Patents

리소그래피 장치, 결정 방법 및 물품의 제조 방법 Download PDF

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KR101751593B1
KR101751593B1 KR1020150066548A KR20150066548A KR101751593B1 KR 101751593 B1 KR101751593 B1 KR 101751593B1 KR 1020150066548 A KR1020150066548 A KR 1020150066548A KR 20150066548 A KR20150066548 A KR 20150066548A KR 101751593 B1 KR101751593 B1 KR 101751593B1
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Prior art keywords
substrate
sample shot
unit
detection
stage
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Korean (ko)
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KR20150134270A (ko
Inventor
마사히로 오구라
가즈히코 미시마
가즈시 미즈모토
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캐논 가부시끼가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G03F7/70725—Stages control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • H01L21/0274—
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7049—Technique, e.g. interferometric
    • H01L22/12—

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020150066548A 2014-05-21 2015-05-13 리소그래피 장치, 결정 방법 및 물품의 제조 방법 Active KR101751593B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014105667A JP6278833B2 (ja) 2014-05-21 2014-05-21 リソグラフィ装置、および物品の製造方法
JPJP-P-2014-105667 2014-05-21

Publications (2)

Publication Number Publication Date
KR20150134270A KR20150134270A (ko) 2015-12-01
KR101751593B1 true KR101751593B1 (ko) 2017-06-27

Family

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KR1020150066548A Active KR101751593B1 (ko) 2014-05-21 2015-05-13 리소그래피 장치, 결정 방법 및 물품의 제조 방법

Country Status (6)

Country Link
US (1) US9606456B2 (https=)
EP (1) EP2947512B1 (https=)
JP (1) JP6278833B2 (https=)
KR (1) KR101751593B1 (https=)
CN (1) CN105093845B (https=)
TW (1) TWI637240B (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6333039B2 (ja) 2013-05-16 2018-05-30 キヤノン株式会社 インプリント装置、デバイス製造方法およびインプリント方法
JP6315904B2 (ja) * 2013-06-28 2018-04-25 キヤノン株式会社 インプリント方法、インプリント装置及びデバイスの製造方法
US10644239B2 (en) 2014-11-17 2020-05-05 Emagin Corporation High precision, high resolution collimating shadow mask and method for fabricating a micro-display
US10386731B2 (en) * 2016-05-24 2019-08-20 Emagin Corporation Shadow-mask-deposition system and method therefor
TWI633197B (zh) * 2016-05-24 2018-08-21 Emagin Corporation 高精準度蔽蔭遮罩沉積系統及其方法
WO2020038661A1 (en) * 2018-08-23 2020-02-27 Asml Netherlands B.V. Substrate support, lithographic apparatus, substrate inspection apparatus, device manufacturing method
JP7270417B2 (ja) * 2019-03-08 2023-05-10 キヤノン株式会社 インプリント装置の制御方法、インプリント装置、および物品製造方法
CN114270273A (zh) * 2019-07-30 2022-04-01 Asml荷兰有限公司 确定标记测量序列的方法、平台设备和光刻设备
TWI786489B (zh) * 2019-12-26 2022-12-11 日商國際電氣半導體技術服務股份有限公司 電阻率測定方法、半導體裝置之製造方法、電阻率測定程式及電阻率測定器
JP7759368B2 (ja) * 2023-10-27 2025-10-23 キヤノン株式会社 情報処理装置

Citations (1)

* Cited by examiner, † Cited by third party
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JP2000260827A (ja) * 1999-03-12 2000-09-22 Towa Corp 半導体チップ実装用加熱装置及び加熱方法

Family Cites Families (10)

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Publication number Priority date Publication date Assignee Title
JP3365571B2 (ja) * 1993-11-10 2003-01-14 株式会社ニコン 光学式計測装置及び露光装置
JP4029181B2 (ja) * 1996-11-28 2008-01-09 株式会社ニコン 投影露光装置
JP3013837B2 (ja) * 1998-04-27 2000-02-28 日本電気株式会社 ステージ位置計測装置およびその計測方法
KR101013347B1 (ko) 2002-04-09 2011-02-10 가부시키가이샤 니콘 노광방법, 노광장치, 및 디바이스 제조방법
KR20050118309A (ko) 2003-04-17 2005-12-16 가부시키가이샤 니콘 선출 방법, 노광 방법, 선출 장치, 노광 장치 및 디바이스제조 방법
JP2005217092A (ja) * 2004-01-29 2005-08-11 Canon Inc 半導体露光方法及び半導体露光装置
CN100498538C (zh) 2004-05-17 2009-06-10 Asml荷兰有限公司 光刻装置和器件制造方法
US20090225286A1 (en) 2004-06-21 2009-09-10 Nikon Corporation Exposure apparatus, method for cleaning member thereof , maintenance method for exposure apparatus, maintenance device, and method for producing device
JP4614386B2 (ja) * 2005-02-04 2011-01-19 キヤノン株式会社 位置決め装置、露光装置およびそれを用いたデバイス製造方法
CN102243441B (zh) 2010-05-12 2015-06-17 上海微电子装备有限公司 温度控制装置、应用其的投影曝光装置及温度控制方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000260827A (ja) * 1999-03-12 2000-09-22 Towa Corp 半導体チップ実装用加熱装置及び加熱方法

Also Published As

Publication number Publication date
JP2015220447A (ja) 2015-12-07
EP2947512A3 (en) 2016-03-30
JP6278833B2 (ja) 2018-02-14
EP2947512A2 (en) 2015-11-25
KR20150134270A (ko) 2015-12-01
TW201544914A (zh) 2015-12-01
TWI637240B (zh) 2018-10-01
CN105093845B (zh) 2018-03-23
US9606456B2 (en) 2017-03-28
EP2947512B1 (en) 2022-03-23
CN105093845A (zh) 2015-11-25
US20150338751A1 (en) 2015-11-26

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