KR101739631B1 - TiN막의 성막 방법 및 기억 매체 - Google Patents

TiN막의 성막 방법 및 기억 매체 Download PDF

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Publication number
KR101739631B1
KR101739631B1 KR1020147021757A KR20147021757A KR101739631B1 KR 101739631 B1 KR101739631 B1 KR 101739631B1 KR 1020147021757 A KR1020147021757 A KR 1020147021757A KR 20147021757 A KR20147021757 A KR 20147021757A KR 101739631 B1 KR101739631 B1 KR 101739631B1
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South Korea
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film
tin
stress
gas
forming
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Korean (ko)
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KR20140116901A (ko
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히데아키 야마사키
다케시 야마모토
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도쿄엘렉트론가부시키가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/405—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their composition, e.g. multilayer masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
KR1020147021757A 2012-01-05 2012-12-12 TiN막의 성막 방법 및 기억 매체 Active KR101739631B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012000444A JP5872904B2 (ja) 2012-01-05 2012-01-05 ＴｉＮ膜の成膜方法および記憶媒体
JPJP-P-2012-000444 2012-01-05
PCT/JP2012/082213 WO2013103076A1 (ja) 2012-01-05 2012-12-12 ＴｉＮ膜の成膜方法および記憶媒体

Publications (2)

Publication Number Publication Date
KR20140116901A KR20140116901A (ko) 2014-10-06
KR101739631B1 true KR101739631B1 (ko) 2017-05-24

Family

ID=48745140

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Application Number Title Priority Date Filing Date
KR1020147021757A Active KR101739631B1 (ko) 2012-01-05 2012-12-12 TiN막의 성막 방법 및 기억 매체

Country Status (5)

Country Link
US (1) US9257278B2 (https=)
JP (1) JP5872904B2 (https=)
KR (1) KR101739631B1 (https=)
TW (1) TWI613309B (https=)
WO (1) WO2013103076A1 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6492736B2 (ja) 2015-02-17 2019-04-03 東京エレクトロン株式会社 基板処理装置及び基板処理方法並びに記憶媒体
JP6416031B2 (ja) * 2015-03-30 2018-10-31 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体デバイスの製造方法、基板処理装置およびプログラム
JP6436886B2 (ja) * 2015-09-28 2018-12-12 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法及びプログラム
US10543512B2 (en) * 2015-12-08 2020-01-28 M-I L.L.C. Apparatus and method of separation with a pressure differential device
US10535527B2 (en) * 2017-07-13 2020-01-14 Applied Materials, Inc. Methods for depositing semiconductor films
KR102549542B1 (ko) 2017-09-12 2023-06-29 삼성전자주식회사 금속 하드마스크 및 반도체 소자의 제조 방법
CN110875181A (zh) * 2018-08-30 2020-03-10 长鑫存储技术有限公司 介电材料层及其形成方法、应用其的半导体结构

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050112876A1 (en) * 2003-11-26 2005-05-26 Chih-Ta Wu Method to form a robust TiCI4 based CVD TiN film

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3138892B2 (ja) 1992-12-17 2001-02-26 東京エレクトロン株式会社 薄膜形成方法及びその装置
US5989999A (en) 1994-11-14 1999-11-23 Applied Materials, Inc. Construction of a tantalum nitride film on a semiconductor wafer
US6251758B1 (en) 1994-11-14 2001-06-26 Applied Materials, Inc. Construction of a film on a semiconductor wafer
US6155198A (en) 1994-11-14 2000-12-05 Applied Materials, Inc. Apparatus for constructing an oxidized film on a semiconductor wafer
US6699530B2 (en) * 1995-07-06 2004-03-02 Applied Materials, Inc. Method for constructing a film on a semiconductor wafer
KR100218728B1 (ko) * 1995-11-01 1999-09-01 김영환 반도체 소자의 금속 배선 제조방법
JP3851686B2 (ja) * 1996-06-08 2006-11-29 キヤノンアネルバ株式会社 プラズマｃｖｄによる薄膜形成方法
JPH10237662A (ja) * 1996-12-24 1998-09-08 Sony Corp 金属膜のプラズマｃｖｄ方法、および金属窒化物膜の形成方法ならびに半導体装置
US6555183B2 (en) * 1999-06-11 2003-04-29 Applied Materials, Inc. Plasma treatment of a titanium nitride film formed by chemical vapor deposition
JP4178776B2 (ja) 2001-09-03 2008-11-12 東京エレクトロン株式会社 成膜方法
KR100695887B1 (ko) 2004-12-09 2007-03-20 삼성전자주식회사 티타늄질화막 형성 방법 및 상기 티타늄질화막을 이용한금속-절연체-금속 커패시터의 하부전극 형성 방법
WO2009119627A1 (ja) * 2008-03-28 2009-10-01 東京エレクトロン株式会社 金属系膜の成膜方法および記憶媒体
JP5774822B2 (ja) 2009-05-25 2015-09-09 株式会社日立国際電気 半導体デバイスの製造方法及び基板処理装置
JP2011103330A (ja) * 2009-11-10 2011-05-26 Panasonic Corp 半導体装置の製造方法
US9573806B2 (en) * 2013-03-11 2017-02-21 Taiwan Semiconductor Manufacturing Company, Ltd. MEMS device structure with a capping structure

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050112876A1 (en) * 2003-11-26 2005-05-26 Chih-Ta Wu Method to form a robust TiCI4 based CVD TiN film

Also Published As

Publication number Publication date
TW201348495A (zh) 2013-12-01
US9257278B2 (en) 2016-02-09
KR20140116901A (ko) 2014-10-06
US20150004803A1 (en) 2015-01-01
WO2013103076A1 (ja) 2013-07-11
TWI613309B (zh) 2018-02-01
JP2013139609A (ja) 2013-07-18
JP5872904B2 (ja) 2016-03-01

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