KR101734383B1 - method for manufacturing semiconductor test socket - Google Patents

method for manufacturing semiconductor test socket Download PDF

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Publication number
KR101734383B1
KR101734383B1 KR1020160001935A KR20160001935A KR101734383B1 KR 101734383 B1 KR101734383 B1 KR 101734383B1 KR 1020160001935 A KR1020160001935 A KR 1020160001935A KR 20160001935 A KR20160001935 A KR 20160001935A KR 101734383 B1 KR101734383 B1 KR 101734383B1
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KR
South Korea
Prior art keywords
electrode
molding layer
solder ball
molding
solder
Prior art date
Application number
KR1020160001935A
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Korean (ko)
Inventor
유재복
유봉석
박민수
Original Assignee
주식회사 에스에프에이반도체
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Priority to KR1020160001935A priority Critical patent/KR101734383B1/en
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Publication of KR101734383B1 publication Critical patent/KR101734383B1/en

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/04—Housings; Supporting members; Arrangements of terminals
    • G01R1/0408—Test fixtures or contact fields; Connectors or connecting adaptors; Test clips; Test sockets
    • G01R1/0433—Sockets for IC's or transistors
    • G01R1/0441—Details
    • G01R1/0466—Details concerning contact pieces or mechanical details, e.g. hinges or cams; Shielding
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R3/00—Apparatus or processes specially adapted for the manufacture or maintenance of measuring instruments, e.g. of probe tips
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2832—Specific tests of electronic circuits not provided for elsewhere
    • G01R31/2836—Fault-finding or characterising
    • G01R31/2849—Environmental or reliability testing, e.g. burn-in or validation tests
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2855—Environmental, reliability or burn-in testing
    • G01R31/286—External aspects, e.g. related to chambers, contacting devices or handlers
    • G01R31/2863—Contacting devices, e.g. sockets, burn-in boards or mounting fixtures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2886—Features relating to contacting the IC under test, e.g. probe heads; chucks

Abstract

A plurality of through holes are formed in a substrate for a semiconductor test socket for inspecting products such as a semiconductor chip, a semiconductor package, and a semiconductor device. The through holes are filled with a conductive material to form a bond via ball A BVS (Bond Via in Socket) process for forming a wire-shaped electrode electrically energizable on the bond via ball; A molding step of forming a molding layer having a thickness greater than the height of the electrode on the substrate, the upper surface of the molding layer being formed parallel to the substrate; The upper surface portion of the molding layer corresponding to the outer side of the upper end of the electrode is subjected to laser drilling or grinding to thereby process the upper surface portion of the molding layer so that the upper end of the electrode is exposed to the outside of the molding layer by the processing amount Electrode exposing process; And a solder ball drop process in which a solder ball in a molten state is supplied onto an upper end of the electrode exposed through the electrode exposing process and a solder ball is formed to surround the upper end of the electrode as the solder member is cooled.

Description

TECHNICAL FIELD [0001] The present invention relates to a method for manufacturing semiconductor test socket,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor test socket manufacturing method, and more particularly, to a semiconductor test socket manufacturing method in which a semiconductor test socket is contacted with a semiconductor device such as a semiconductor chip, a semiconductor package, To a method of manufacturing a semiconductor test socket.

In general, a product such as a semiconductor device is subjected to a test to determine its electrical performance after a manufacturing process. Inspection of the product is carried out with a semiconductor test socket (or a connector or connector) formed so as to be in electrical contact with the terminal of the product inserted between the product and the inspection circuit board.

Such a conventional semiconductor test socket can be used in a burn-in test process during the manufacturing process of a semiconductor device in addition to a test for determining final semiconductor devices.

The size and lead pitch of the leads of the terminals of the semiconductor devices are also becoming finer in accordance with the development and miniaturization tendency of the integrated products such as semiconductor devices and thus the lead pitch between the conductive patterns of the test socket is also finely formed A method is required.

The method of manufacturing a semiconductor test socket according to the prior art is an encapsulation type molding which does not satisfy the flatness condition on the processed surface of the product and requires a flatness condition of a rise in the process cost and a high degree of accuracy due to the sub- It is very limited in the manufacture of products.

For example, in a conventional method of manufacturing a semiconductor test socket using an encapsulation method and a sub-plate forming method, a wire bonding process for bonding the wire 2 to the substrate 1 with the structure as shown in FIG. 1 is included. Here, the wire 2 means a contact terminal which can be energized by directly contacting the product to be inspected.

After the wire bonding process in the prior art, the process of forming and curing the sub-plate 3 is performed in an individual unit type. In addition, after the curing, an encapsulation process is performed using a chase mold (4).

Recesses 4a for each of the tips 2a are formed at the bottom of the chase mold 4 of the prior art so that the tips 2a of the wires 2 are not molded. Here, each of the recesses 4a is formed in a groove shape capable of accommodating the tip 2a in a space.

A cavity 5 is formed around the wire 2 by the chase mold 4 and the sub plate 3 of the prior art.

Thereafter, the injection process is performed. For example, the injection injector 6 injects a filling material such as encapsulating materials or a molding compound into the interior of the cavity 5. That is, the filler material of the injection device 6 is introduced into the cavity 5 through the injection port 4b of a plurality of chase molds 4 (only one is shown for ease of explanation in FIG. 1). Here, the filling material is filled only in the inner space of the cavity 5, and is not filled in the recess 4a of the chase mold 4. [ After the filling of the filler material is completed, the filler material is cured, and as a result, the filling layer 7 is formed.

Thereafter, a mold removing process is performed in which the injection injector 6 and the chase mold 4 are removed from the filling layer 7.

As a result, a plurality of tips 2a of the wires 2 are projected on the upper surface of the filling layer 7, and on the other upper surface of the filling layer 7 corresponding to the injection port 4b, Are integrally formed with the projections 7a.

The protrusion 7a of the prior art is removed by cutting as an element that hinders flatness quality.

Finally, in the prior art, the additional sub-plate forming process is performed on the tip 2a of the wire 2, so that the tip reinforcing portion 2b is integrally formed around the tip 2a of each wire 2 .

Here, the tip 2a of the wire 2 of the prior art is exposed to the outside of the filling layer 7 or the tip reinforcing portion 2b, and can be abraded in direct contact with the product for semiconductor testing thereafter, The wear of the tip 2a of the wire 2 causes a problem of shortening the life of the semiconductor test socket.

In addition, since the prior art semiconductor test socket manufacturing method is performed by the encapsulation progress through injection injection, the flatness quality of the surface of the filling layer is very difficult to meet the market demand specification, and the semiconductor test socket quality requirement level is not satisfied have.

Further, in the prior art, since the sub-plate for supporting the chase mold is formed and the additional sub-plate is bonded to the sub-plate to complete the cavity, the process is very complicated and the encapsulation process, The manufacturing cost is also increased due to the multi-step process including the additional sub-plate forming process for protecting the substrate.

Particularly, in the prior art, since the lead pitch m is set to 0.6 mm or more in consideration of a plurality of tip reinforcement interferences formed through the additional sub-plate forming process, a small surface mount product, It is not possible to manufacture semiconductor test sockets that inspect fine-pitch products.

It is an object of the present invention to provide a relatively simple process or a low cost process including a BVS (Bond Via in Socket) process, a molding process, an electrode exposure process, and a solder ball drop process To provide a semiconductor test socket manufacturing method capable of reliably and stably producing a semiconductor test socket for a narrow pitch (finepitch) product.

According to another aspect of the present invention, there is provided a method of manufacturing a semiconductor test socket, comprising: forming a plurality of through holes in a substrate for a semiconductor test socket; filling the through holes with a conductive material to form bond via balls; A BVS (Bond Via in Socket) process for forming a wire-shaped electrode so as to be electrically conductive on the bond-via ball; A molding step of forming a molding layer having a thickness greater than the height of the electrode on the substrate, the upper surface of the molding layer being formed parallel to the substrate; The upper surface portion of the molding layer corresponding to the outer side of the upper end of the electrode is subjected to laser drilling or grinding to thereby process the upper surface portion of the molding layer so that the upper end of the electrode is exposed to the outside of the molding layer by the processing amount Electrode exposing process; And a solder ball drop process in which a solder ball in a molten state is supplied onto an upper end of the electrode exposed through the electrode exposing step and a solder ball is formed to surround the upper end of the electrode as the solder member is cooled.

In the molding process, the temperatures of the molding material for the molding layer, the substrate, and the electrode are matched with each other to prevent warpage.

The molding process uniformizes the pressure distribution of the molding material in order to prevent the warping.

In the electrode exposing step, the laser drilling or the grinding is locally performed on the upper surface portion of the molding layer corresponding to the upper side and the periphery of the electrode, so that grooves are formed on the upper surface portion of the molding layer .

The solder ball drop process is performed by the solder ball while the solder member is filled in the groove and the upper end portion of the electrode is wrapped around the solder ball, the solder ball protrudes above the upper surface portion of the molding layer, and a fine pitch Is formed.

The electrode exposing process may be performed by performing laser drilling or grinding on an upper surface portion of the molding layer corresponding to the upper side and the entire circumference of the electrode so that the molding layer having a level located below the upper end of the electrode, Lt; / RTI >

The electrode exposing step may be performed by laser drilling or grinding to integrally form a ball receiving portion having a cross section of a downwardly projecting light centering on the electrode and a machined surface of the molding layer and projecting the upper end of the electrode above the ball receiving portion .

The solder ball drop process is performed by the solder ball that is supplied to an upper end portion of the electrode protruded on the ball receiving portion to enclose a part of the ball receiving portion and an upper end portion of the electrode, And a narrow pitch is formed between the solder balls.

In the solder ball drop process, the brazing member is cooled by natural cooling.

The method of manufacturing a semiconductor test socket according to the present invention is characterized in that a lead pitch between solder balls is 0.3 mm to 0.5 mm through a relatively simple process including a BVS (Bond Via in Socket) process, a molding process, an electrode exposure process and a solder ball drop process there is an advantage that a semiconductor test socket having a fine pitch such as mm can be manufactured at a relatively low cost.

The molding process of the present invention is simple and cost-effective compared to forming a molding layer that protects a wire-shaped electrode by using a conventional chase mold and a sub-plate, When the molding layer is formed, the molding material for the molding layer, the substrate and the electrode are made to have the same temperature so that the upper surface of the molding layer is parallel to the substrate, and the pressure distribution of the molding material is made uniform so that warpage There is an advantage that it can not happen.

1 is a cross-sectional view illustrating a process of a semiconductor test socket manufacturing method according to the prior art;
2 is a sectional view for explaining the BVS process of the test socket manufacturing method according to the first embodiment of the present invention;
3 is a cross-sectional view for explaining the molding process after the BVS process of FIG. 2;
4 is a cross-sectional view illustrating an electrode exposing process after the molding process of FIG. 3;
FIG. 5 is a cross-sectional view illustrating a solder ball drop process after the electrode exposure process of FIG. 4; FIG.
6 is a cross-sectional view for explaining an electrode exposing process of a semiconductor test socket manufacturing method according to a second embodiment of the present invention;
7 is a cross-sectional view for explaining the solder ball drop process after the display fixation of FIG. 6;

BRIEF DESCRIPTION OF THE DRAWINGS The advantages and features of the present invention and the manner of achieving them will become apparent with reference to the embodiments described in detail below with reference to the accompanying drawings. The present invention may, however, be embodied in many different forms and should not be construed as being limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. And is provided to fully convey the scope of the invention to those skilled in the art, and the present invention is defined by the claims.

It is to be understood that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. In the present specification, the singular form includes plural forms unless otherwise specified in the specification. &Quot; comprises " and / or "comprising" when used in this specification is taken to specify the presence or absence of one or more other components, steps, operations and / Or add-ons. Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1st Example

FIG. 2 is a cross-sectional view for explaining the BVS process of the test socket manufacturing method according to the first embodiment of the present invention, FIG. 3 is a cross-sectional view for explaining the molding process after the BVS process of FIG. 2, FIG. 5 is a cross-sectional view illustrating a solder ball drop process after the electrode exposure process of FIG. 4; FIG.

2 to 5, the present embodiment includes a solder ball drop process S40, a solder ball drop process S40, a solder ball drop process S40, a molding process S20, an electrode exposing process S30 and a BVS (Bond Via in Socket) process S10 .

Referring to FIG. 2, the BVS process S10 includes forming a plurality of through holes in the semiconductor test socket substrate 100, filling the through holes with a conductive material to form bond via balls 110 do.

The bond-via ball 110 may be formed on the substrate 100 by the number of the electrodes 120.

The electrode 120 is formed in a wire shape as a whole. For example, the electrode 120 has a lower end portion 121 of a triangular cross section that gradually decreases in planarity from the bottom surface of the area corresponding to the bond via ball 110 to a vertical direction, and a lower end portion 121 that is relatively smaller than the bottom surface of the electrode lower end portion 121 A body portion 122 extending from the lower end portion 121 to have the same cross sectional area in a vertical direction and an upper end portion 123 having an inverted triangular cross section integrally formed on the upper portion of the body portion 122.

The substrate 100 may be formed with circuit patterns or circuit elements that can be used as semiconductor test sockets.

The BVS process S10 forms a wire-shaped electrode 120 that extends vertically above the bond-via ball 110 and is electrically energizable. The electrode 120 may be formed by a bonding wire method, or may be formed by a separate press working or a wire manufacturing process. The bond via via 110 may be formed by a BVS process (S10) And may be bonded to the top of the ball 110.

Referring to FIG. 3, the molding process S20 includes forming a molding layer 200 having a thickness greater than the height of the electrode 120 on the substrate 100.

The planar area of the molding layer 200 may be formed to be equal to or the same as the planar area of the substrate 100. The height of the molding layer 200 is larger than the height of the electrode 120. That is, the molding layer 200 can cover the whole of the electrode 120 on the bond via ball 110 on the substrate 100. Since the molding layer 200 completely covers the upper end 123 of the electrode 120 and no electrode 120 is provided on the upper surface of the molding layer 200, the control of the smoothness of the upper surface of the molding layer 200 It can be very easily done.

The molding process S20 is performed such that the temperature of the molding material for the molding layer 200 and the temperature of the substrate 100 and the electrode 120 are matched with each other such that the upper surface of the molding layer 200 is parallel to the substrate 100, The pressure distribution of the molding material is made uniform so that warpage does not occur. The molding material for the molding layer 200 may be a semiconductor encapsulant or a molding compound.

The molding process S20 may be performed through a conventional molding molding apparatus having a generalized mold apparatus configuration so as to enable mass production in forming the molding layer 200 of the same thickness.

4, the electrode exposing step S30 is performed by laser drilling or grinding, which is mechanical machining (D1), on the upper surface of the molding layer 200 corresponding to the outer side of the upper end 123 of the electrode 120 .

In the electrode exposing step S30, the upper surface of the molding layer 200 corresponding to the center of each electrode 120 to be exposed or exposed is locally processed to form a groove 210 And the process of the engraving technique is repeatedly performed.

That is, in the electrode exposing step S30 according to the first embodiment, the machining apparatus for performing the mechanical machining operation D1 includes the molding layer 200 ) Is repeatedly machined.

At this time, the molding material is removed by the processing amount of the processing apparatus, and the groove 210 for each electrode 120 is formed, so that the upper end 123 of each electrode 120 is formed in the molding layer 200 in the groove 210, To the outside.

As the laser drilling or grinding is locally performed on the upper surface of the molding layer 200 corresponding to the upper side and the periphery of each electrode 120, the grooves 210 are formed in the molding layer 200).

At the entrance edge of each groove 210, a camber portion 211 (chamfer) is further formed by mechanical processing D1 of the processing apparatus. The camber part 211 serves as a ball seat to maintain the spherical shape of the solder ball 300 in the solder ball drop process S40 described below to maintain the shape of the solder ball 300, The bonding force of the solder ball 300 can be improved.

The upper end 123 of the electrode 120 is exposed or exposed in the inner space of the groove 210 and the upper surface of the upper surface 123 of the electrode 120 and the inner surface of the groove 210 are exposed, So that a gap can be introduced or filled.

The depth of the groove 210 may be a position at which the upper end 123 of the electrode 120 starts from the upper portion of the body portion 122 of the electrode 120 so that the solder member contacts the upper end portion 123 can be entirely covered with the solder member so that the structural rigidity of the upper end portion 123 of the electrode 120 can be reinforced by the material of the solder member. As a result, the semiconductor test socket manufactured by this embodiment can be freed from the above-mentioned abrasion mentioned in the prior art, and the lifetime of the semiconductor test socket can be increased.

5, the solder ball drop process S40 is performed by using a bonding device for a semiconductor (not shown) to expose the upper end portion 123 of the electrode 120 exposed through the electrode exposing step S30, Drop or supply. The semiconductor bonding apparatus may be a soldering dispensing apparatus for distributing a predetermined amount of solder member to each upper end portion 123 of each electrode 120 to such an extent that the solder ball 300 can be formed.

Thereafter, the solder ball 300 surrounding the upper end 123 of the electrode 120 is formed according to the natural cooling.

That is, the solder ball 300 is formed while the solder ball is filled in the groove 210 and the upper end 123 of the electrode 120 is wrapped through the solder ball drop process S40.

The solder ball 300 is formed in the inside and the top of the groove 210 as a bulge or a spherical shape. At this time, the solder ball 300 is supported by the cam follower 211 of the groove 210. The solder ball 300 protrudes from the upper surface of the molding layer 200. The lead pitch n between the solder balls 300 formed in this manner has a fine pitch corresponding to the interval between the electrodes 120. For example, the numerical range of the narrow pitch may be 0.3 mm to 0.5 mm, but it may not be limited to the numerical range when the solder ball 300 is designed to be deformed through the size adjustment of the solder ball 300 or the gap between the electrodes 120.

Therefore, the semiconductor test socket manufactured by the first embodiment of the present invention and having the solder ball 300 electrically coupled to the electrode 120 can be used for a high precision narrow pitch product such as a semiconductor chip having a narrow pitch It can be used with high abrasion resistance in drag test or burn-in test.

Second Example

The method of manufacturing a semiconductor test socket of the present invention described in this embodiment may be the same as or very similar to that of the first embodiment except that it includes an electrode exposing process and a solder ball drop process for forming a ball receiving portion after the molding process. Therefore, the same or corresponding elements in FIGS. 1 to 7 will be given the same or similar reference numerals, and a description thereof will be omitted here.

FIG. 6 is a cross-sectional view illustrating an electrode exposing process in the method of manufacturing a semiconductor test socket according to a second embodiment of the present invention, and FIG. 7 is a cross-sectional view illustrating a solder ball drop process after exposing and fixing in FIG.

Herein, in order to clarify the features of the second embodiment while avoiding redundant explanations of the first embodiment, a description will be mainly given of the electrode exposure step S31 and the solder ball drop step S41 according to the second embodiment Lt; / RTI >

Referring to FIG. 6, the electrode exposing process S31 of the second embodiment may be performed after the molding process of FIG. 3 described in the first embodiment.

That is, in the electrode exposing step (S31), the upper surface portion 220 of the molding layer 200 corresponding to the upper side and the entire circumference of the electrode 120 is subjected to mechanical processing (D2) such as laser drilling or grinding Depending on performance,

The electrode exposing step S31 according to the second embodiment is a processing step of the embossing technique in which the upper surface portion 200 of the molding layer 200 except for the electrode 120 and the peripheral portion thereof is pierced, As well as the electrode 120 and its peripheral parts.

This results in the machining surface 221 of the molding layer 200 having a level located below the top portion 120 of the electrode 120. [ Here, the machining surface 221 of most of the molding layers 200 is positioned below the upper end 120 of the electrode 120.

Meanwhile, during the electrode exposing step S31, the angle and position of the laser drilling or grinding process can be adjusted. Through the electrode drilling or grinding process, the machining surface 221 of the molding layer 200 is integrally formed A ball bearing portion 222 of a trapezoidal cross section or a vertically lower light cross section is formed.

The mechanical machining (D2) of the second embodiment forms a plurality of ball bearings 222 around the electrode 120 on a smooth machined surface 211.

At this time, the upper end 123 of the electrode 120 protrudes above the ball receiving portion 222. In addition, a portion directly under the upper end 123 of the electrode 120 is surrounded by the ball receiving portion 222.

7, in a solder ball drop process S41, a solder member in a molten state is supplied to an upper end portion 123 of the electrode 120 protruded above the ball receiving portion 222, A solder ball 301 is formed to cover a part of the receiving part 222 and the upper end 123 of the electrode 120. [

The lead pitch n between the solder balls 301 may also have a narrow pitch of 0.3 mm to 0.5 mm and the size of the solder ball 301 may be adjusted Or the distance between the electrodes 120. [0070]

The present invention according to the first embodiment or the second embodiment is a method of forming the molding layer 200 on the substrate 100 with the same degree of smoothness or warpage as the substrate 100 through the molding process, And a semiconductor test socket for inspecting a product having a narrow pitch of 0.3 mm to 0.5 mm can be mass-produced at a low cost by a relatively simple process.

The foregoing description is merely illustrative of the technical idea of the present invention and various changes and modifications may be made without departing from the essential characteristics of the present invention. Therefore, the embodiments described in the present invention are not intended to limit the scope of the present invention, but are intended to be illustrative, and the scope of the present invention is not limited by these embodiments. It is intended that the present invention cover the modifications and variations of this invention provided they come within the scope of the appended claims and their equivalents, which fall within the scope of the present invention as claimed.

100: substrate 110: bond-via ball
120: electrode 200: molding layer
210: grooves 300, 301: solder balls

Claims (9)

A plurality of through holes are formed in a substrate for a semiconductor test socket, a through hole is filled with a conductive material to form a bond via ball, and a wire-shaped electrode is formed so as to be electrically energizable on the bond via ball A BVS (Bond Via in Socket) process;
A molding step of forming a molding layer having a thickness greater than the height of the electrode on the substrate, the upper surface of the molding layer being formed parallel to the substrate;
The upper surface portion of the molding layer corresponding to the outer side of the upper end of the electrode is subjected to laser drilling or grinding to thereby process the upper surface portion of the molding layer so that the upper end of the electrode is exposed to the outside of the molding layer by the processing amount Electrode exposing process; And
And a solder ball drop process in which a solder ball in a molten state is supplied onto an upper end of the electrode exposed through the electrode exposing step and a solder ball is formed to surround the upper end of the electrode as the solder member is cooled
Wherein the method comprises the steps of:
The method according to claim 1,
In the molding step,
In order to prevent warpage, the molding material for the molding layer and the temperature of the substrate and the electrode are made to coincide with each other
Wherein the method comprises the steps of:
3. The method of claim 2,
In the molding step,
In order to prevent the warping, the pressure distribution of the molding material is made uniform
Wherein the method comprises the steps of:
The method according to claim 1,
The electrode-
The laser drilling or the grinding is locally performed on the upper surface portion of the molding layer corresponding to the upper side and the periphery of the electrode so that grooves are formed on the upper surface portion of the molding layer
Wherein the method comprises the steps of:
5. The method of claim 4,
In the solder ball drop process,
Wherein the solder ball is made of the solder ball while the solder member is filled in the groove and the upper end portion of the electrode is wrapped, the solder ball protrudes above the upper surface portion of the molding layer, and a fine pitch is formed between the solder balls
Wherein the method comprises the steps of:
The method according to claim 1,
The electrode-
Making the machining surface of the molding layer at a level located below the upper end of the electrode by performing the laser drilling or grinding on the upper surface portion of the molding layer corresponding to the upper side and the entire circumference of the electrode
Wherein the method comprises the steps of:
The method according to claim 6,
The electrode-
Wherein a ball receiving portion having a cross-section of a vertically downward light beam is integrally formed on the machined surface of the molding layer with the electrode as a center through the laser drilling or grinding process and the upper end of the electrode protrudes upward from the ball receiving portion
Wherein the method comprises the steps of:
8. The method of claim 7,
In the solder ball drop process,
Wherein the solder ball is made of the solder ball which is supplied to the upper end of the electrode protruded on the ball receiving part and encloses a part of the ball receiving part and an upper end of the electrode, the solder ball is protruded above the ball receiving part, In which a narrow pitch is formed
Wherein the method comprises the steps of:
The method according to claim 1,
In the solder ball drop process,
The solder member is cooled by natural cooling
Wherein the method comprises the steps of:
KR1020160001935A 2016-01-07 2016-01-07 method for manufacturing semiconductor test socket KR101734383B1 (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220167899A (en) * 2021-06-15 2022-12-22 (주)포인트엔지니어링 Supporting plate for electrical test socket, socket pin for electrical test socket, and electrical test socket

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020130676A1 (en) 1996-09-13 2002-09-19 Brian Samuel Beaman Integrated compliant probe for wafer level test and burn-in
JP2012141274A (en) 2010-12-29 2012-07-26 Samsung Electro-Mechanics Co Ltd Ceramic substrate for probe card and manufacturing method thereof

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020130676A1 (en) 1996-09-13 2002-09-19 Brian Samuel Beaman Integrated compliant probe for wafer level test and burn-in
JP2012141274A (en) 2010-12-29 2012-07-26 Samsung Electro-Mechanics Co Ltd Ceramic substrate for probe card and manufacturing method thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220167899A (en) * 2021-06-15 2022-12-22 (주)포인트엔지니어링 Supporting plate for electrical test socket, socket pin for electrical test socket, and electrical test socket
KR102606892B1 (en) 2021-06-15 2023-11-29 (주)포인트엔지니어링 Supporting plate for electrical test socket, socket pin for electrical test socket, and electrical test socket

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