KR101733149B1 - 전기적으로 펌핑된 광전자 반도체 칩 - Google Patents

전기적으로 펌핑된 광전자 반도체 칩 Download PDF

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KR101733149B1
KR101733149B1 KR1020167033319A KR20167033319A KR101733149B1 KR 101733149 B1 KR101733149 B1 KR 101733149B1 KR 1020167033319 A KR1020167033319 A KR 1020167033319A KR 20167033319 A KR20167033319 A KR 20167033319A KR 101733149 B1 KR101733149 B1 KR 101733149B1
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South Korea
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semiconductor chip
quantum wells
optoelectronic semiconductor
coating layers
radioactive
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Korean (ko)
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KR20160142890A (ko
Inventor
마티아스 페터
토비아스 마이어
위르겐 오프
테츠야 타키
요아힘 헤르트코른
마티아스 사바틸
안스가르 라우브슈
안드레아스 비버스도르프
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오스람 옵토 세미컨덕터스 게엠베하
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Publication of KR20160142890A publication Critical patent/KR20160142890A/ko
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    • H01L33/04—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H01L33/06—
    • H01L33/26—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H01L2924/12041—

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  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
KR1020167033319A 2009-08-13 2010-06-30 전기적으로 펌핑된 광전자 반도체 칩 Active KR101733149B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102009037416.7A DE102009037416B4 (de) 2009-08-13 2009-08-13 Elektrisch gepumpter optoelektronischer Halbleiterchip
DE102009037416.7 2009-08-13
PCT/EP2010/059291 WO2011018273A1 (de) 2009-08-13 2010-06-30 Elektrisch gepumpter optoelektronischer halbleiterchip

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020127006584A Division KR101682345B1 (ko) 2009-08-13 2010-06-30 전기적으로 펌핑된 광전자 반도체 칩

Publications (2)

Publication Number Publication Date
KR20160142890A KR20160142890A (ko) 2016-12-13
KR101733149B1 true KR101733149B1 (ko) 2017-05-08

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KR1020167033319A Active KR101733149B1 (ko) 2009-08-13 2010-06-30 전기적으로 펌핑된 광전자 반도체 칩
KR1020127006584A Active KR101682345B1 (ko) 2009-08-13 2010-06-30 전기적으로 펌핑된 광전자 반도체 칩

Family Applications After (1)

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KR1020127006584A Active KR101682345B1 (ko) 2009-08-13 2010-06-30 전기적으로 펌핑된 광전자 반도체 칩

Country Status (7)

Country Link
US (1) US8581236B2 (https=)
EP (1) EP2465148B1 (https=)
JP (1) JP5705222B2 (https=)
KR (2) KR101733149B1 (https=)
CN (1) CN102576785B (https=)
DE (1) DE102009037416B4 (https=)
WO (1) WO2011018273A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012012010A2 (en) 2010-04-30 2012-01-26 Trustees Of Boston University High efficiency ultraviolet light emitting diode with band structure potential fluctuations
US8723189B1 (en) 2012-01-06 2014-05-13 Trustees Of Boston University Ultraviolet light emitting diode structures and methods of manufacturing the same
DE102013200507A1 (de) * 2013-01-15 2014-07-17 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement
JP6010088B2 (ja) * 2014-11-07 2016-10-19 株式会社東芝 半導体発光素子
JP2022172792A (ja) * 2021-05-07 2022-11-17 日機装株式会社 窒化物半導体発光素子

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1667292A1 (en) 2003-08-26 2006-06-07 Sony Corporation GaN III-V COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME
EP1883141A1 (de) 2006-07-27 2008-01-30 Osram Opto Semiconductors GmbH LD oder LED mit Übergitter-Mantelschicht

Family Cites Families (17)

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Publication number Priority date Publication date Assignee Title
US5023685A (en) * 1988-06-06 1991-06-11 Bethea Clyde G Quantum-well radiation-interactive device, and methods of radiation detection and modulation
JP3304782B2 (ja) * 1996-09-08 2002-07-22 豊田合成株式会社 半導体発光素子
JP3705047B2 (ja) * 1998-12-15 2005-10-12 日亜化学工業株式会社 窒化物半導体発光素子
DE19955747A1 (de) 1999-11-19 2001-05-23 Osram Opto Semiconductors Gmbh Optische Halbleitervorrichtung mit Mehrfach-Quantentopf-Struktur
JP4032636B2 (ja) 1999-12-13 2008-01-16 日亜化学工業株式会社 発光素子
US6586762B2 (en) 2000-07-07 2003-07-01 Nichia Corporation Nitride semiconductor device with improved lifetime and high output power
US6906352B2 (en) 2001-01-16 2005-06-14 Cree, Inc. Group III nitride LED with undoped cladding layer and multiple quantum well
EP2034530B1 (en) * 2001-06-15 2015-01-21 Cree, Inc. GaN based LED formed on a SiC substrate
US6927412B2 (en) 2002-11-21 2005-08-09 Ricoh Company, Ltd. Semiconductor light emitter
JP2004289112A (ja) * 2003-03-06 2004-10-14 Ricoh Co Ltd 半導体発光素子およびその製造方法および光送信モジュールおよび光送受信モジュールおよび光通信システム
JP2006108585A (ja) 2004-10-08 2006-04-20 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子
JP2006210692A (ja) * 2005-01-28 2006-08-10 Toyoda Gosei Co Ltd ３族窒化物系化合物半導体発光素子
JP2006332258A (ja) 2005-05-25 2006-12-07 Matsushita Electric Ind Co Ltd 窒化物半導体装置及びその製造方法
EP1764840A1 (en) 2005-09-15 2007-03-21 SuperNova Optoelectronics Corporation Gallium nitride semiconductor light emitting device
US7786508B2 (en) * 2006-09-01 2010-08-31 Georgia State University Research Foundation, Inc. High operating temperature split-off band infrared detectors
KR101330898B1 (ko) 2007-04-05 2013-11-18 엘지전자 주식회사 반도체 레이저 다이오드
US20090183774A1 (en) * 2007-07-13 2009-07-23 Translucent, Inc. Thin Film Semiconductor-on-Sapphire Solar Cell Devices

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1667292A1 (en) 2003-08-26 2006-06-07 Sony Corporation GaN III-V COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME
EP1883141A1 (de) 2006-07-27 2008-01-30 Osram Opto Semiconductors GmbH LD oder LED mit Übergitter-Mantelschicht

Also Published As

Publication number Publication date
EP2465148B1 (de) 2017-08-09
WO2011018273A1 (de) 2011-02-17
DE102009037416A1 (de) 2011-02-17
US8581236B2 (en) 2013-11-12
DE102009037416B4 (de) 2021-10-14
US20120161103A1 (en) 2012-06-28
KR101682345B1 (ko) 2016-12-05
KR20120045049A (ko) 2012-05-08
JP2013502058A (ja) 2013-01-17
JP5705222B2 (ja) 2015-04-22
KR20160142890A (ko) 2016-12-13
CN102576785B (zh) 2015-05-20
EP2465148A1 (de) 2012-06-20
CN102576785A (zh) 2012-07-11

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