KR101729269B1 - Light emitting diode and method for fabricating the light emitting device - Google Patents

Abstract

A light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; A barrier layer formed under the light emitting structure; An adhesive layer formed under the barrier layer; And a conductive layer formed under the barrier layer.

Description

TECHNICAL FIELD The present invention relates to a light emitting device and a method of manufacturing the same,

Embodiments relate to a light emitting device that improves the stability and reliability by enhancing the adhesion of the light emitting device.

BACKGROUND ART Light emitting devices such as a light emitting diode (LD) or a laser diode using semiconductor materials of Group 3-5 or 2-6 group semiconductors are widely used for various colors such as red, green, blue, and ultraviolet And it is possible to realize white light rays with high efficiency by using fluorescent materials or colors, and it is possible to realize low energy consumption, semi-permanent life time, quick response speed, safety and environment friendliness compared to conventional light sources such as fluorescent lamps and incandescent lamps .

Therefore, a transmission module of the optical communication means, a light emitting diode backlight replacing a cold cathode fluorescent lamp (CCFL) constituting a backlight of an LCD (Liquid Crystal Display) display device, a white light emitting element capable of replacing a fluorescent lamp or an incandescent lamp Diode lighting, automotive headlights, and traffic lights.

Stability and reliability of such a light emitting element are very important factors, and there is a need to improve the stability and reliability of the light emitting element.

The embodiments relate to a light emitting device that improves the stability and reliability by improving the bonding force of the light emitting device.

A light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; A barrier layer formed under the light emitting structure; An adhesive layer formed under the barrier layer; And a conductive layer formed under the barrier layer.

At this time, the adhesive layer may be formed of copper (Cu) or gold (Au).

The thickness of the adhesive layer may be set to 0.1 to 4 탆.

In addition, the barrier layer may include a channel layer or a current confined layer.

The light emitting device may further include a reflective layer formed between the light emitting structure and the adhesive layer.

The light emitting device may further include an ohmic layer formed between the light emitting structure and the adhesive layer.

The light emitting device according to the embodiment has the effect of improving the stability and reliability by improving the bonding force.

1 is a view showing an embodiment of a light emitting device,
2A to 2K are views showing a manufacturing method of an embodiment of a light emitting device,
3 is a view showing another embodiment of the light emitting device,
4 is a view showing an embodiment of a light emitting device package.

Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.

In describing the above embodiments, it is to be understood that each layer (film), area, pattern or structure may be referred to as being "on" or "under" the substrate, each layer Quot; on "and " under" include both being formed "directly" or "indirectly" In addition, the criteria for above or below each layer will be described with reference to the drawings.

The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. Also, the size of each component does not entirely reflect the actual size.

1 is a cross-sectional view of an embodiment of a light emitting device.

As shown in FIG. The light emitting device of the first embodiment includes the bonding layer 150 formed on the supporting substrate 160, the diffusion preventing layer 155 formed on the bonding layer 150, the conductive layer 170 formed on the diffusion preventing layer, The reflective layer 140 formed on the adhesive layer 200, the current confinement layer 135, the channel layer 180, the first conductivity type semiconductor layer 122, and the active layer 124, The light emitting structure 120 including the second conductive semiconductor layer 126, the first electrode 190 formed on the first conductive semiconductor layer 122, and the first electrode 190 formed on the first conductive semiconductor layer 122 (Not shown). Here, the current confinement layer 135 and the channel layer 180 formed on the adhesive layer 200 may be defined as a barrier layer.

The light emitting device may include a coupling layer 150, a diffusion prevention layer 155, and a conductive layer 170 on a supporting substrate 160.

The support substrate 160 may be made of a material selected from the group consisting of molybdenum (Mo), silicon (Si), tungsten (W), copper (Cu), and aluminum (Al) (Au), copper alloy (Cu Alloy), nickel (Ni-nickel), copper-tungsten (Cu- W), carrier wafers (e.g., GaN, Si, Ge, GaAs, ZnO, SiGe, SiC, SiGe, Ga ₂ O _3, etc.), and the like. The conductive support substrate 160 may be formed using an electrochemical metal deposition method, a bonding method using a yttetic metal, or the like.

The bonding layer 150 may be formed on the supporting substrate 160 for bonding with the diffusion preventing layer 155 or the conductive layer 170. The bonding layer 150 may be formed from a group consisting of, for example, Au, Sn, In, Ag, Ni, Nb and Cu. The material to be selected or an alloy thereof.

The diffusion preventing layer 155 may be formed on the bonding layer 150 to prevent diffusion of the metal material constituting the supporting substrate 160 or the bonding layer 150 into the light emitting structure 120 or the reflective layer 140. The diffusion preventing layer 155 may be formed of a material selected from the group consisting of copper (Cu), gold (Au), tin (Sn), nickel (Ni), or an alloy thereof.

The bonding layer 150 and the diffusion preventing layer 155 may be formed as one layer and the diffusion preventing layer 155 and the conductive layer 170 may be formed as one layer according to the embodiment .

The conductive layer 170 is formed of a material selected from the group consisting of Ni-nickel, platinum Pt, titanium Ti, tungsten W, vanadium V, iron Fe, and molybdenum Mo Or an alloy optionally containing them.

The conductive layer 170 has an effect of minimizing mechanical damage (cracking or peeling) that may occur in the manufacturing process of the light emitting device.

The adhesive layer 200 may be formed on the conductive layer 170 to enhance adhesion between the barrier layer (the current confinement layer 135 or the channel layer 180) and the conductive layer 170, (Breakage or peeling) of the light emitting element due to the weakening of the adhesion between the barrier layer and the conductive layer 170 and to mitigate the impact applied to the light emitting element during the manufacturing process of the light emitting element Thereby minimizing the mechanical damage (breakage or peeling) of the light emitting element, thereby improving the stability and reliability of the light emitting element. At this time, it is the same as described above that the current confinement layer 135 or the channel layer 180 can be defined as a barrier layer. In particular, when the barrier layer includes a material having a breaking property (e.g., an insulating material or the like), the effect of increasing the adhesion between the barrier layer and the conductive layer may be large.

 The adhesive layer 200 has an effect of preventing diffusion of the metal material constituting the supporting substrate 160, the coupling layer 150 or the conductive layer 170 into the light emitting structure 120.

The current blocking layer 135 disperses the current flowing in the light emitting structure 120 in the horizontal direction to prevent malfunction of the light emitting device due to the overcurrent, thereby improving the stability and reliability of the light emitting device.

The current blocking layer 135 may be formed between the adhesive layer 200 and the light emitting structure 120. The current blocking layer 135 may be formed of a material having a lower electrical conductivity than the reflective layer 140, a material forming a Schottky contact with the second conductive semiconductor layer 126, or an electrically insulating material. have. For example, the current blocking layer 135 is ZnO, SiO _2, SiON, Si ₃ N ₄ , Al ₂ O _3, TiO ₂ , Ti, Al, and Cr.

The current blocking layer 135 may be formed between the adhesive layer 200 and the second conductive semiconductor layer 126.

The channel layer 180 may include at least one of a metal material and an insulating material. In the case of a metal material, the channel layer 180 may be formed of a material having a lower electrical conductivity than that of the ohmic layer 130, The current applied to the channel layer 180 can be prevented from being applied to the channel layer 180.

For example, the channel layer 180 may include at least one of titanium (Ti), nickel (Ni), platinum (Pt), lead (Pb), rhodium (Rh), iridium (Ir), and tungsten Or at least one of aluminum oxide (Al ₂ O ₃ ), silicon oxide (SiO ₂ ), silicon nitride (Si ₃ N ₄ ) and titanium oxide (TiO _x ) (Ti), nickel (Ni), platinum (Pt), platinum (Pt), and the like. And may include at least one of tungsten (W), molybdenum (Mo), vanadium (V), and iron (Fe).

The channel layer 180 has an effect of protecting the structures located under the channel layer 180 from the etching when the light emitting structure 120 is etched and protecting the light emitting device from damage that may occur in the manufacturing process .

The reflective layer 150 may be formed of a metal layer containing aluminum (Al), silver (Ag), nickel (Ni), platinum (Pt), rhodium (Rh), or an alloy containing Al, Ag, Pt, . Aluminum, silver, or the like effectively reflects the light generated in the active layer 124, thereby greatly improving the light extraction efficiency of the light emitting device.

The first conductive semiconductor layer 122 may be formed of a Group III-V compound semiconductor doped with a first conductive dopant. The first conductive semiconductor layer 112 may be an N-type semiconductor layer, In this case, the first conductive dopant is an N-type dopant and may include but is not limited to Si, Ge, Sn, Se, and Te.

In the active layer 124, electrons injected through the first conductivity-type semiconductor layer 122 and holes injected through the second conductivity-type semiconductor layer 126 formed later are brought into contact with each other to form an active layer And is a layer that emits light having energy determined by the energy band.

The second conductivity type semiconductor layer 126 may be a group III _- V compound semiconductor doped with a second conductivity type dopant, such as In _x Al _y Ga _1-xy N (0? X? 1, 0? Y? 1, 0? X + y? 1). When the second conductive semiconductor layer 126 is a P-type semiconductor layer, the second conductive dopant may include Mg, Zn, Ca, Sr, and Ba as a P-type dopant.

A concave-convex structure is formed on the first conductivity type semiconductor layer 122 to improve the light extraction efficiency. At this time, the concavo-convex structure may be formed by a dry etching process, or by etching using a PEC method or a mask. The dry etching method may be plasma etching, sputter etching, ion etching, or the like.

The concavo-convex structure of such a light emitting structure is formed by reducing the total reflection on the surface of the first conductivity type semiconductor layer 122 by changing the angle of incidence of the light emitted from the active layer 124 and entering the first conductivity type semiconductor layer 122, And the light emitted from the active layer 124 is prevented from being absorbed in the light emitting structure, thereby enhancing the light emitting efficiency.

The concavo-convex structure can be formed periodically or aperiodically, and the concavo-convex shape is not limited. For example, the concavo-convex shape includes both single and multiple shapes such as square, hemispherical, triangular, and trapezoidal shapes.

The concave-convex structure may be formed using a wet etching process or a dry etching process, or may be formed using a wet etching process and a dry etching process.

The dry etching method may be plasma etching, sputter etching, ion etching or the like, and a wet chemical etching (PEC) process may be used.

At this time, in the case of the PEC process, the shape of fine irregularities can be controlled by controlling the amount of the etchant (for example, KOH) and the etching rate difference caused by the crystallinity of GaN. Also, the irregular shape may be periodically adjusted by etching after forming the mask.

A first electrode 190 is formed on the first conductive semiconductor layer 122. The first electrode 190 may be formed of a metal such as molybdenum (Mo), chromium (Cr), nickel (Ni), gold (Au) Selected from the group consisting of aluminum (Al), titanium (Ti), platinum (Pt), vanadium (V), tungsten (W), lead (Pd), copper (Cu), rhodium Metal or an alloy of these metals.

Details of each configuration will be described in detail with reference to FIGS. 2A to 2G.

2A to 2G are views illustrating a method of manufacturing a light emitting device according to a first embodiment of the present invention.

The substrate 100 is prepared as shown in FIG. 2A. The substrate 100 may be made of a conductive substrate or an insulating substrate, e.g., sapphire (Al ₂ O _3), SiC, Si, GaAs, GaN, ZnO, Si, GaP, InP, Ge, and Ga ₂ 0 ₃ can be used. A concavo-convex structure may be formed on the substrate 100, but the present invention is not limited thereto. The substrate 100 may be wet-cleaned to remove impurities on the surface.

The light emitting structure 120 including the first conductive semiconductor layer 122, the active layer 124, and the second conductive semiconductor layer 126 may be formed on the substrate 100.

At this time, a buffer layer (not shown) may be grown between the light emitting structure 120 and the substrate 100 to mitigate the difference in lattice mismatch and thermal expansion coefficient of the material. The material of the buffer layer may be a Group III-V compound semiconductor, for example, at least one of GaN, InN, AlN, InGaN, AlGaN, InAlGaN and AlInN. An undoped semiconductor layer may be formed on the buffer layer, but the present invention is not limited thereto.

The light emitting structure 120 may be formed using a metal organic chemical vapor deposition (MOCVD) method, a chemical vapor deposition (CVD) method, a plasma enhanced chemical vapor deposition (PECVD) method, ), A molecular beam epitaxy (MBE) method, a hydride vapor phase epitaxy (HVPE) method, and the like, but the present invention is not limited thereto.

The first conductive semiconductor layer 122 may be formed of a Group III-V compound semiconductor doped with a first conductive dopant. When the first conductive semiconductor layer 112 is an N-type semiconductor layer The first conductive dopant may include, for example, Si, Ge, Sn, Se, and Te as an N-type dopant.

The first conductive semiconductor layer 122 may include a semiconductor material having a composition formula of Al _x In _y Ga _(1-xy) N (0? X? 1, 0? _Y? 1, 0? _X + . For example, the first conductive semiconductor layer 112 may be formed of one or more of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, InGaAs, AlInGaAs, GaP, AlGaP, InGaP, AlInGaP, .

The first conductive semiconductor layer 122 may be formed of a silane gas containing an n-type impurity such as trimethyl gallium gas (TMGa), ammonia gas (NH ₃ ), nitrogen gas (N ₂ ) SiH ₄ ) may be implanted.

The active layer 124 is formed on the first conductive semiconductor layer 122 and the second conductive semiconductor layer 126. Carriers injected through the first conductive semiconductor layer 122 and the second conductive semiconductor layer 126 are in contact with each other to form an energy band Lt; / RTI >

The active layer 124 may be formed of at least one of a single quantum well structure, a multi quantum well (MQW) structure, a quantum-wire structure, or a quantum dot structure. For example, the active layer 114 may be formed with a multiple quantum well structure by injecting trimethyl gallium gas (TMGa), ammonia gas (NH ₃ ), nitrogen gas (N ₂ ), and trimethyl indium gas (TMIn) But is not limited thereto.

The well layer / barrier layer of the active layer 124 may be formed of any one or more pairs of InGaN / GaN, InGaN / InGaN, GaN / AlGaN / InAlGaN / GaN, GaAs (InGaAs), / AlGaAs, GaP (InGaP) But is not limited thereto. The well layer may be formed of a material having a bandgap narrower than the bandgap of the barrier layer.

A conductive clad layer (not shown) may be formed on and / or below the active layer 124. The conductive clad layer may be formed of an AlGaN-based semiconductor and may have a band gap higher than that of the active layer 124.

The second conductive semiconductor layer 126 may be formed of a Group III-V compound semiconductor doped with a second conductive dopant such as In _x Al _y Ga _1-xy N (0? X? 1, 0? _Y? 0 ≤ x + y ≤ 1). When the second conductive semiconductor layer 126 is a P-type semiconductor layer, the second conductive dopant may include Mg, Zn, Ca, Sr, and Ba as a P-type dopant.

The second conductive type semiconductor layer 126 is Bisei that the chamber comprises a p-type impurity such as trimethyl gallium gas (TMGa), ammonia gas (NH _3), nitrogen gas (N _2), and magnesium (Mg) butyl bicyclo The p-type GaN layer may be formed by implanting pentadienyl magnesium (EtCp ₂ Mg) {Mg (C ₂ H ₅ C ₅ H ₄ ) ₂ }, but the present invention is not limited thereto.

In an exemplary embodiment, the first conductive semiconductor layer 122 may be a P-type semiconductor layer, and the second conductive semiconductor layer 126 may be an N-type semiconductor layer. An N-type semiconductor layer (not shown) may be formed on the second conductive semiconductor layer 126 if the semiconductor having the opposite polarity to the second conductive type, for example, the second conductive semiconductor layer is a P- have. Accordingly, the light emitting structure 110 may have any one of an N-P junction structure, a P-N junction structure, an N-P-N junction structure, and a P-N-P junction structure.

Then, as shown in FIG. 2B, the channel layer 180 is stacked on the second conductive semiconductor layer 126.

The channel layer 180 may include at least one of a metal material and an insulating material. In the case of a metal material, the channel layer 180 may be formed of a material having a lower electrical conductivity than that of the ohmic layer 130, The current applied to the channel layer 180 can be prevented from being applied to the channel layer 180.

For example, the channel layer 180 may include at least one of titanium (Ti), nickel (Ni), platinum (Pt), lead (Pb), rhodium (Rh), iridium (Ir), and tungsten Or at least one of aluminum oxide (Al ₂ O ₃ ), silicon oxide (SiO ₂ ), silicon nitride (Si ₃ N ₄ ) and titanium oxide (TiO _x ) (Ti), nickel (Ni), platinum (Pt), platinum (Pt), and the like. And may include at least one of tungsten (W), molybdenum (Mo), vanadium (V), and iron (Fe).

The channel layer 180 protects the structures located below the channel layer 180 from being etched when etching the light emitting structure 120 to be described later and protects the light emitting device from damage .

Then, the channel layer 180 is etched to form a groove. Such a groove may be formed by a process such as dry etching using a mask.

Then, the current blocking layer 135 is formed in the groove formed as shown in FIG. 2C.

The current blocking layer 135 disperses the current flowing in the light emitting structure 120 in the horizontal direction to prevent malfunction of the light emitting device due to the overcurrent, thereby improving the stability and reliability of the light emitting device.

The current blocking layer 135 may be formed between the adhesive layer 200 and the light emitting structure 120. The current blocking layer 135 may be formed of a material having a lower electrical conductivity than the reflective layer 140, a material forming a Schottky contact with the second conductive semiconductor layer 126, or an electrically insulating material. have. For example, the current blocking layer 135 is ZnO, SiO _2, SiON, Si ₃ N ₄ , Al ₂ O _3, TiO ₂ , Ti, Al, and Cr.

The current blocking layer 135 may be formed between the adhesive layer 200 and the second conductive semiconductor layer 126.

Referring to FIG. 2C, the reflective layer 140 is formed on the second conductive semiconductor layer 126.

The reflective layer 140 may have a thickness of about 2500 Angstroms. The reflective layer 140 may be formed of a metal or an alloy including at least one of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au or Hf. Alternatively, the metal or alloy can be formed into a multilayer using a transparent conductive material such as ITO, IZO, IZTO, IAZO, IGZO, IGTO, AZO, or ATO. Specific examples thereof include IZO / Ni, AZO / Ag, IZO / Ag / Ni, AZO / Ag / Ni, Ag / Cu, and Ag / Pd / Cu. Aluminum, silver, or the like effectively reflects the light generated in the active layer 124, thereby greatly improving the light extraction efficiency of the light emitting device.

The adhesive layer 200 is formed on the reflective layer 140, the current confinement layer 135, or the channel layer 180 as shown in FIG. 2D.

The adhesive layer 200 may be formed of copper (Cu) or gold (Au). The adhesive layer 200 is formed by an electron beam evaporation method or the like. And may be formed using a sputtering deposition method. When a sputtering deposition method is used, ions of the source material are sputtered and deposited as the ionized atoms are accelerated by an electric field to impinge on the source material of the conductive layer 170. According to an embodiment, the adhesive layer 200 may be formed of a plurality of layers.

According to the embodiment, the thickness of the adhesive layer 200 may be 0.1 to 4 μm.

The adhesive layer 200 is formed on the current confinement layer 135 and the conductive layer 170 to enhance the adhesion between the current confinement layer 135 and the conductive layer 170 or between the channel layer 180 and the conductive layer 170. [ (Breakage or peeling) of the light emitting device due to the weak adhesion between the channel layer 180 and the conductive layer 170 and to prevent the mechanical damage The impact applied is mitigated to minimize the mechanical damage (breakage or peeling) of the light emitting element, thereby improving the stability and reliability of the light emitting element.

The adhesive layer 200 has an effect of preventing diffusion of the metal material constituting the supporting substrate 160, the coupling layer 150 or the conductive layer 170 into the light emitting structure 120.

The conductive layer 170 is formed on the adhesive layer 200 as shown in FIG. 2E. The conductive layer 170 is formed of a material selected from the group consisting of Ni-nickel, platinum Pt, titanium Ti, tungsten W, vanadium V, iron Fe, and molybdenum Mo Materials or alloys in which they are optionally incorporated.

At this time, the conductive layer 170 can be formed using a sputtering deposition method. When a sputter deposition method is used, ions of the source material are sputtered and deposited as the ionized atoms are accelerated by the electric field and impinge on the source material of the layer 3 (170). In addition, an electrochemical metal deposition method, a bonding method using a eutectic metal, or the like may be used according to the embodiment. The conductive layer 170 may be formed of a plurality of layers according to an embodiment.

The conductive layer 170 supports the light emitting structure 120 as a whole and has an effect of minimizing mechanical damage (breakage or peeling) that may occur in the manufacturing process of the light emitting device.

2F, a diffusion preventing layer 155 is formed on the conductive layer 170 to prevent diffusion of the metal material constituting the supporting substrate 160 or the bonding layer 150 into the light emitting structure 120 . The diffusion preventing layer 155 may be formed of a material selected from the group consisting of copper (Cu), gold (Au), tin (Sn), nickel (Ni), or an alloy thereof.

The coupling layer 150 may be formed for coupling the supporting substrate 160 and the diffusion preventing layer 155 or the supporting substrate 160 and the conductive layer 170. The bonding layer 150 may be formed from a group consisting of, for example, Au, Sn, In, Ag, Ni, Nb and Cu. The material to be selected or an alloy thereof.

The bonding layer 150 and the diffusion preventing layer 155 may be formed as one layer and the diffusion preventing layer 155 and the conductive layer 170 may be formed as one layer according to the embodiment .

Then, as shown in FIG. The support substrate 160 may be formed on the bonding layer 150. [

The support substrate 160 may be formed of a material selected from the group consisting of molybdenum (Mo), silicon (Si), tungsten (W), copper (Cu), and aluminum (Al) For example, gold (Au), copper alloy (Cu Alloy), nickel-nickel, copper-tungsten (Cu-W), carrier wafers (eg GaN, Si, Ge, GaAs, ZnO, SiGe, SiC , SiGe, Ga ₂ O _3, etc.), and the like. The conductive support substrate 160 may be formed using an electrochemical metal deposition method, a bonding method using a yttetic metal, or the like.

According to an embodiment, when holes are injected into the second conductive type semiconductor layer 126 through the conductive layer 170, the supporting substrate 160 may be formed of an insulating material, and the insulating material may be a non- Nitride. As an example, the support substrate 160 may be formed of a silicon oxide (SiO ₂ ) layer, an oxynitride layer, and an aluminum oxide layer.

Then, as shown in FIG. 2H, the substrate 100 is separated.

The removal of the substrate 100 may be performed by a laser lift off (LLO) method using an excimer laser or the like, or a dry and wet etching method.

When the excimer laser light having a wavelength in a certain region in the direction of the substrate 100 is focused and irradiated using the laser lift-off method, heat energy is applied to the interface between the substrate 110 and the light emitting structure 120 The interface is separated into gallium and nitrogen molecules, and the substrate 100 is instantaneously separated from the laser light passing portion.

Then, the side surface of the light emitting structure 120 is etched as shown in FIG. 2I. At this time, if the material forming the channel layer 180 is detected by the end point detaching method, a part of the side surface of the light emitting structure 120 may be etched by stopping the etching.

At this time, the etching position can be adjusted so that the channel layer 180 is positioned below the light emitting structure 120 to be etched.

The channel layer 180 has an effect of protecting the structures located under the channel layer 180 from the etching when the light emitting structure 120 is etched and protecting the light emitting device from damage that may occur in the manufacturing process .

A concave-convex structure is formed on the first conductivity type semiconductor layer 122 to improve the light extraction efficiency.

This concavo-convex structure increases the light extraction effect by reducing the total reflection at the surface of the first conductivity type semiconductor layer 122 by changing the angle of incidence of the light emitted from the active layer 124 and entering the first conductivity type semiconductor layer 122 And light emitted from the active layer 124 is not absorbed in the light emitting structure, thereby increasing the luminous efficiency.

The concavo-convex structure can be formed periodically or aperiodically, and the concavo-convex shape is not limited. For example, the concavo-convex shape includes both single and multiple shapes such as square, hemispherical, triangular, and trapezoidal shapes.

The concave-convex structure may be formed using a wet etching process or a dry etching process, or may be formed using a wet etching process and a dry etching process.

The dry etching method may be plasma etching, sputter etching, ion etching or the like, and a wet chemical etching (PEC) process may be used.

At this time, in the case of the PEC process, the shape of fine irregularities can be controlled by controlling the amount of the etchant (for example, KOH) and the etching rate difference caused by the crystallinity of GaN. Also, the irregular shape may be periodically adjusted by etching after forming the mask.

2J, the first electrode 190 may be formed on the first conductive semiconductor layer 122. The first electrode 190 may be formed of a material selected from the group consisting of molybdenum, chromium (Cr), nickel (Au), aluminum (Al), titanium (Ti), platinum (Pt), vanadium (V), tungsten (W), lead (Pd), copper (Cu), rhodium Ir) or an alloy of the metals.

A passivation layer 195 may be deposited on at least a portion of the channel layer 180, the side of the light emitting structure 120, and the first electrode 190, have. Here, the passivation layer may be made of an insulating material, and the insulating material may be made of a non-conductive oxide or nitride. As an example, the passivation layer may comprise a silicon oxide (SiO ₂ ) layer, an oxynitride layer, and an aluminum oxide layer.

3 is a view showing another embodiment of the light emitting structure.

3 is an embodiment in which the ohmic layer 130 is added to the light emitting structure of FIG. At this time, the ohmic layer 130 may be formed on the top of the adhesive layer 2000 or the reflective layer 140 and may be formed on the bottom of the light emitting structure 120 or the channel layer 180 or the current confined layer 135.

At this time, the ohmic layer 130 may be deposited to a thickness of about 200 Angstroms. The ohmic layer 130 may be made of a conductive material such as ITO (indium tin oxide), IZO (indium zinc oxide), IZTO (indium zinc tin oxide), IAZO oxide, IGZO, IGTO, aluminum zinc oxide, ATO, GZO, IZO, AGZO, AlGaO, NiO, IrOx / Au, and Ni / IrOx / Au / ITO, Ag, Ni, Cr, Ti, Al, Rh , Pd, Ir, Sn, In, Ru, Mg, Zn, Pt, Au, and Hf. The ohmic layer 1300 may be formed by a sputtering method or an electron beam evaporation method.

4 is a cross-sectional view of an embodiment of a light emitting device package.

As shown in the figure, the light emitting device package according to the above-described embodiments includes a package body 420, a first electrode layer 411 and a second electrode layer 412 provided on the package body 420, A light emitting device 400 according to an embodiment of the present invention includes a first electrode layer 411 and a second electrode layer 412 electrically connected to each other and a filler 440 surrounding the light emitting device 400 do.

The package body 420 may be formed of a silicon material, a synthetic resin material, or a metal material, and an inclined surface may be formed around the light emitting device 400 to enhance light extraction efficiency.

The first electrode layer 411 and the second electrode layer 412 are electrically isolated from each other and provide power to the light emitting device 400. The first electrode layer 411 and the second electrode layer 412 may increase the light efficiency by reflecting the light generated from the light emitting device 400. The heat generated from the light emitting device 400 may be transmitted to the outside As shown in FIG.

The light emitting device 400 may be mounted on the package body 420 or on the first electrode layer 411 or the second electrode layer 412.

The light emitting device 400 may be electrically connected to the first electrode layer 411 and the second electrode layer 412 by wire, flip chip or die bonding.

The filler 440 can surround and protect the light emitting device 400. The filler 440 may include a phosphor to change the wavelength of the light emitted from the light emitting device 400.

At least one of the light emitting devices of the above-described embodiments may be mounted on one or more than one light emitting device package, but the present invention is not limited thereto.

A light guide plate, a prism sheet, a diffusion sheet, and the like, which are optical members, may be disposed on the light path of the light emitting device package. Such a light emitting device package, a substrate, and an optical member can function as a light unit. Still another embodiment may be implemented as a display device, an indicating device, a lighting system including the semiconductor light emitting device or the light emitting device package described in the above embodiments, for example, the lighting system may include a lamp, a streetlight .

The features, structures, effects and the like described in the embodiments are included in at least one embodiment of the present invention and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects and the like illustrated in the embodiments can be combined and modified by other persons skilled in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

100: substrate
120: light emitting structure 122: first conductivity type semiconductor layer
124: active layer 126: second conductivity type semiconductor layer
130: ohmic layer 135: current confined layer
140: reflective layer 150: bonding layer
155: diffusion preventing layer 160: supporting substrate
170: conductive layer 180: channel layer
190: first electrode 195: passivation layer
200: adhesive layer
400: light emitting element 411: first electrode layer
412: second electrode layer 420: package body
440: filler

Claims (6)

A conductive support substrate;
A light emitting structure disposed on the conductive supporting substrate, the light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer;
A first electrode disposed on the first conductive semiconductor layer;
A barrier layer disposed between the light emitting structure and the conductive supporting substrate, the barrier layer including a channel layer and a current confined layer;
An adhesive layer disposed under the barrier layer;
A conductive layer disposed between the conductive support substrate and the adhesive bond; And
And a reflective layer disposed between the adhesive layer and the light emitting structure and between the channel layer and the current confined layer, the channel layer being disposed to project outward from the light emitting structure in an edge region of the light emitting structure, Wherein the first electrode and the current confinement layer are disposed so as to overlap with each other in the vertical direction, and a center axis in which the first electrode and the current confinement layer are superimposed in the vertical direction is not overlapped with the reflective layer, Region does not overlap with the reflective layer in the vertical direction. The method according to claim 1,
Wherein the adhesive layer comprises copper (Cu) or gold (Au). The method according to claim 1,
And the thickness of the adhesive layer is set to 0.1 to 4 mu m. The method according to claim 1,
Wherein the reflective layer has a side surface and a bottom surface in contact with the adhesive layer. 5. The method according to any one of claims 1 to 4,
Wherein the channel layer and the current confining layer are in direct contact with at least one of the adhesive layer and the light emitting structure. 5. The method according to any one of claims 1 to 4,
And an ohmic layer disposed between the light emitting structure and the adhesive layer.

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