KR101718182B1 - 플라즈마 처리 장치, 플라즈마 생성 장치, 안테나 구조체, 및 플라즈마 생성 방법 - Google Patents

플라즈마 처리 장치, 플라즈마 생성 장치, 안테나 구조체, 및 플라즈마 생성 방법 Download PDF

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KR101718182B1
KR101718182B1 KR1020130067634A KR20130067634A KR101718182B1 KR 101718182 B1 KR101718182 B1 KR 101718182B1 KR 1020130067634 A KR1020130067634 A KR 1020130067634A KR 20130067634 A KR20130067634 A KR 20130067634A KR 101718182 B1 KR101718182 B1 KR 101718182B1
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South Korea
Prior art keywords
window member
plasma
closed circuit
lead
capacitor
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KR1020130067634A
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English (en)
Korean (ko)
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KR20130140571A (ko
Inventor
요헤이 야마자와
가즈키 덴포
다카후미 기무라
치시오 고시미즈
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도쿄엘렉트론가부시키가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/32119—Windows
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020130067634A 2012-06-14 2013-06-13 플라즈마 처리 장치, 플라즈마 생성 장치, 안테나 구조체, 및 플라즈마 생성 방법 KR101718182B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012134593A JP6084784B2 (ja) 2012-06-14 2012-06-14 プラズマ処理装置、プラズマ生成装置、アンテナ構造体、及びプラズマ生成方法
JPJP-P-2012-134593 2012-06-14

Publications (2)

Publication Number Publication Date
KR20130140571A KR20130140571A (ko) 2013-12-24
KR101718182B1 true KR101718182B1 (ko) 2017-03-20

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ID=49899299

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Application Number Title Priority Date Filing Date
KR1020130067634A KR101718182B1 (ko) 2012-06-14 2013-06-13 플라즈마 처리 장치, 플라즈마 생성 장치, 안테나 구조체, 및 플라즈마 생성 방법

Country Status (4)

Country Link
JP (1) JP6084784B2 (ja)
KR (1) KR101718182B1 (ja)
CN (1) CN103517536B (ja)
TW (1) TWI569693B (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6625429B2 (ja) * 2015-12-25 2019-12-25 株式会社ショーワ ベーンポンプ装置
US11551909B2 (en) * 2017-10-02 2023-01-10 Tokyo Electron Limited Ultra-localized and plasma uniformity control in a plasma processing system
WO2021181531A1 (ja) * 2020-03-10 2021-09-16 日新電機株式会社 アンテナ機構及びプラズマ処理装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011096687A (ja) * 2009-10-27 2011-05-12 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理方法
JP2011119658A (ja) * 2009-10-27 2011-06-16 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6447637B1 (en) * 1999-07-12 2002-09-10 Applied Materials Inc. Process chamber having a voltage distribution electrode
JP3903730B2 (ja) * 2001-04-04 2007-04-11 松下電器産業株式会社 エッチング方法
JP3714924B2 (ja) * 2002-07-11 2005-11-09 東京エレクトロン株式会社 プラズマ処理装置
JP2004079557A (ja) * 2002-08-09 2004-03-11 Hitachi High-Technologies Corp プラズマ処理装置及びプラズマ処理方法
JP2005285564A (ja) * 2004-03-30 2005-10-13 Mitsui Eng & Shipbuild Co Ltd プラズマ処理装置
KR20060073737A (ko) * 2004-12-24 2006-06-29 삼성전자주식회사 플라즈마 장치
CN2907173Y (zh) * 2006-02-24 2007-05-30 苏州大学 大面积并联高密度感应耦合等离子体源
JP5479867B2 (ja) * 2009-01-14 2014-04-23 東京エレクトロン株式会社 誘導結合プラズマ処理装置
CN102056395B (zh) * 2009-10-27 2014-05-07 东京毅力科创株式会社 等离子体处理装置和等离子体处理方法
JP5916044B2 (ja) * 2010-09-28 2016-05-11 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP2012133680A (ja) * 2010-12-22 2012-07-12 Fujitsu Frontech Ltd マークシート読取装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011096687A (ja) * 2009-10-27 2011-05-12 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理方法
JP2011119658A (ja) * 2009-10-27 2011-06-16 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理方法
JP2011119659A (ja) * 2009-10-27 2011-06-16 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理方法

Also Published As

Publication number Publication date
JP2013258098A (ja) 2013-12-26
TW201414363A (zh) 2014-04-01
CN103517536A (zh) 2014-01-15
JP6084784B2 (ja) 2017-02-22
TWI569693B (zh) 2017-02-01
KR20130140571A (ko) 2013-12-24
CN103517536B (zh) 2017-03-01

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