KR101716908B1 - 성긴 패턴화된 마스크에 의한 레이저 융삭 가공 - Google Patents

성긴 패턴화된 마스크에 의한 레이저 융삭 가공 Download PDF

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Publication number
KR101716908B1
KR101716908B1 KR1020117013922A KR20117013922A KR101716908B1 KR 101716908 B1 KR101716908 B1 KR 101716908B1 KR 1020117013922 A KR1020117013922 A KR 1020117013922A KR 20117013922 A KR20117013922 A KR 20117013922A KR 101716908 B1 KR101716908 B1 KR 101716908B1
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KR
South Korea
Prior art keywords
delete delete
mask
substrate
pattern
features
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Expired - Fee Related
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KR1020117013922A
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English (en)
Korean (ko)
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KR20110095365A (ko
Inventor
토마스 알 코리건
Original Assignee
쓰리엠 이노베이티브 프로퍼티즈 컴파니
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Publication of KR20110095365A publication Critical patent/KR20110095365A/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/066—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/24—Curved surfaces
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Laser Beam Processing (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Manufacture Or Reproduction Of Printing Formes (AREA)
KR1020117013922A 2008-11-21 2009-10-13 성긴 패턴화된 마스크에 의한 레이저 융삭 가공 Expired - Fee Related KR101716908B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/275,669 US20100129617A1 (en) 2008-11-21 2008-11-21 Laser ablation tooling via sparse patterned masks
US12/275,669 2008-11-21
PCT/US2009/060402 WO2010059310A2 (en) 2008-11-21 2009-10-13 Laser ablation tooling via sparse patterned masks

Publications (2)

Publication Number Publication Date
KR20110095365A KR20110095365A (ko) 2011-08-24
KR101716908B1 true KR101716908B1 (ko) 2017-03-17

Family

ID=42196564

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020117013922A Expired - Fee Related KR101716908B1 (ko) 2008-11-21 2009-10-13 성긴 패턴화된 마스크에 의한 레이저 융삭 가공

Country Status (6)

Country Link
US (2) US20100129617A1 (enExample)
EP (1) EP2359389A4 (enExample)
JP (2) JP2012509194A (enExample)
KR (1) KR101716908B1 (enExample)
CN (1) CN102217036B (enExample)
WO (1) WO2010059310A2 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100129617A1 (en) * 2008-11-21 2010-05-27 Corrigan Thomas R Laser ablation tooling via sparse patterned masks
US20110070398A1 (en) 2009-09-18 2011-03-24 3M Innovative Properties Company Laser ablation tooling via distributed patterned masks
KR101135537B1 (ko) * 2010-07-16 2012-04-13 삼성모바일디스플레이주식회사 레이저 조사 장치
CN102789125B (zh) * 2012-07-27 2013-11-13 京东方科技集团股份有限公司 隔垫物制作方法
US9142778B2 (en) * 2013-11-15 2015-09-22 Universal Display Corporation High vacuum OLED deposition source and system
CN110670016A (zh) * 2015-02-05 2020-01-10 迈康尼股份公司 用于激光诱导向前转移且高产量的重复方法、以及供体材料回收
CN108602161B (zh) * 2016-07-08 2020-06-26 华为技术有限公司 一种用于对壳体表面进行光处理的方法和装置
KR102437366B1 (ko) * 2017-02-09 2022-08-29 유에스 신써틱 코포레이션 에너지 가공된 다결정 다이아몬드 컴팩트들 및 이에 관련된 방법
CN109257931B (zh) * 2017-05-15 2022-05-03 电子部品研究院 石墨烯制备方法
CN108907482B (zh) * 2018-09-26 2024-01-02 无锡先导智能装备股份有限公司 激光跳转型极耳切割成型装置的使用方法及激光模切机
US11353995B2 (en) * 2019-04-15 2022-06-07 Elo Touch Solutions, Inc. Laser-ablated gradient region of a touchscreen
FR3098137B1 (fr) * 2019-07-02 2022-07-15 Aptar France Sas Procédé de fabrication d’une paroi de distribution
KR20210142049A (ko) 2020-05-15 2021-11-24 삼성디스플레이 주식회사 표시 장치, 마스크 조립체, 표시 장치의 제조장치 및 표시 장치의 제조방법

Citations (2)

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Also Published As

Publication number Publication date
WO2010059310A2 (en) 2010-05-27
CN102217036A (zh) 2011-10-12
CN102217036B (zh) 2014-04-23
JP2015231638A (ja) 2015-12-24
US20170285457A1 (en) 2017-10-05
US20100129617A1 (en) 2010-05-27
JP6117881B2 (ja) 2017-04-19
EP2359389A4 (en) 2014-08-20
KR20110095365A (ko) 2011-08-24
JP2012509194A (ja) 2012-04-19
WO2010059310A3 (en) 2010-07-15
EP2359389A2 (en) 2011-08-24

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