CN102217036B - 用具有稀疏图案的掩模进行激光烧蚀加工 - Google Patents

用具有稀疏图案的掩模进行激光烧蚀加工 Download PDF

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Publication number
CN102217036B
CN102217036B CN200980146301.2A CN200980146301A CN102217036B CN 102217036 B CN102217036 B CN 102217036B CN 200980146301 A CN200980146301 A CN 200980146301A CN 102217036 B CN102217036 B CN 102217036B
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China
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characteristic
mask
substrate
imaging
image
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Chinese (zh)
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CN102217036A (zh
Inventor
托马斯·R·科里甘
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3M Innovative Properties Co
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3M Innovative Properties Co
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/066Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/70Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/24Curved surfaces
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/24Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Laser Beam Processing (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Manufacture Or Reproduction Of Printing Formes (AREA)
CN200980146301.2A 2008-11-21 2009-10-13 用具有稀疏图案的掩模进行激光烧蚀加工 Active CN102217036B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/275,669 US20100129617A1 (en) 2008-11-21 2008-11-21 Laser ablation tooling via sparse patterned masks
US12/275,669 2008-11-21
PCT/US2009/060402 WO2010059310A2 (en) 2008-11-21 2009-10-13 Laser ablation tooling via sparse patterned masks

Publications (2)

Publication Number Publication Date
CN102217036A CN102217036A (zh) 2011-10-12
CN102217036B true CN102217036B (zh) 2014-04-23

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Application Number Title Priority Date Filing Date
CN200980146301.2A Active CN102217036B (zh) 2008-11-21 2009-10-13 用具有稀疏图案的掩模进行激光烧蚀加工

Country Status (6)

Country Link
US (2) US20100129617A1 (enExample)
EP (1) EP2359389A4 (enExample)
JP (2) JP2012509194A (enExample)
KR (1) KR101716908B1 (enExample)
CN (1) CN102217036B (enExample)
WO (1) WO2010059310A2 (enExample)

Cited By (1)

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JP2015231638A (ja) * 2008-11-21 2015-12-24 スリーエム イノベイティブ プロパティズ カンパニー まばらなパターンを有するマスクを介したレーザーアブレーションツール

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US20110070398A1 (en) 2009-09-18 2011-03-24 3M Innovative Properties Company Laser ablation tooling via distributed patterned masks
KR101135537B1 (ko) * 2010-07-16 2012-04-13 삼성모바일디스플레이주식회사 레이저 조사 장치
CN102789125B (zh) * 2012-07-27 2013-11-13 京东方科技集团股份有限公司 隔垫物制作方法
US9142778B2 (en) * 2013-11-15 2015-09-22 Universal Display Corporation High vacuum OLED deposition source and system
CN110670016A (zh) * 2015-02-05 2020-01-10 迈康尼股份公司 用于激光诱导向前转移且高产量的重复方法、以及供体材料回收
CN108602161B (zh) * 2016-07-08 2020-06-26 华为技术有限公司 一种用于对壳体表面进行光处理的方法和装置
KR102437366B1 (ko) * 2017-02-09 2022-08-29 유에스 신써틱 코포레이션 에너지 가공된 다결정 다이아몬드 컴팩트들 및 이에 관련된 방법
CN109257931B (zh) * 2017-05-15 2022-05-03 电子部品研究院 石墨烯制备方法
CN108907482B (zh) * 2018-09-26 2024-01-02 无锡先导智能装备股份有限公司 激光跳转型极耳切割成型装置的使用方法及激光模切机
US11353995B2 (en) * 2019-04-15 2022-06-07 Elo Touch Solutions, Inc. Laser-ablated gradient region of a touchscreen
FR3098137B1 (fr) * 2019-07-02 2022-07-15 Aptar France Sas Procédé de fabrication d’une paroi de distribution
KR20210142049A (ko) 2020-05-15 2021-11-24 삼성디스플레이 주식회사 표시 장치, 마스크 조립체, 표시 장치의 제조장치 및 표시 장치의 제조방법

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Also Published As

Publication number Publication date
WO2010059310A2 (en) 2010-05-27
CN102217036A (zh) 2011-10-12
JP2015231638A (ja) 2015-12-24
US20170285457A1 (en) 2017-10-05
US20100129617A1 (en) 2010-05-27
JP6117881B2 (ja) 2017-04-19
EP2359389A4 (en) 2014-08-20
KR101716908B1 (ko) 2017-03-17
KR20110095365A (ko) 2011-08-24
JP2012509194A (ja) 2012-04-19
WO2010059310A3 (en) 2010-07-15
EP2359389A2 (en) 2011-08-24

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