KR101706735B1 - Transfer unit, apparatus for treating substrate including the same and method for treating substrate - Google Patents

Transfer unit, apparatus for treating substrate including the same and method for treating substrate Download PDF

Info

Publication number
KR101706735B1
KR101706735B1 KR1020150150384A KR20150150384A KR101706735B1 KR 101706735 B1 KR101706735 B1 KR 101706735B1 KR 1020150150384 A KR1020150150384 A KR 1020150150384A KR 20150150384 A KR20150150384 A KR 20150150384A KR 101706735 B1 KR101706735 B1 KR 101706735B1
Authority
KR
South Korea
Prior art keywords
substrate
hand
processing
chamber
processing chamber
Prior art date
Application number
KR1020150150384A
Other languages
Korean (ko)
Inventor
선진성
정용범
Original Assignee
세메스 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 세메스 주식회사 filed Critical 세메스 주식회사
Priority to KR1020150150384A priority Critical patent/KR101706735B1/en
Application granted granted Critical
Publication of KR101706735B1 publication Critical patent/KR101706735B1/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67742—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67712—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrate being handled substantially vertically
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67766—Mechanical parts of transfer devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Robotics (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

The present invention relates to a substrate processing apparatus. A substrate processing apparatus according to an embodiment of the present invention includes a processing unit for processing a substrate; And a transfer unit for transferring the substrate between the processing units, wherein the transfer unit comprises: a first hand for holding and conveying the substrate in a vacuum system; And a second hand for holding and conveying the substrate in a manner other than vacuum.

Description

TECHNICAL FIELD [0001] The present invention relates to a transfer unit, a substrate processing apparatus including the transfer unit, and a substrate processing method using the transfer unit.

The present invention relates to an apparatus for processing a substrate.

Various processes such as photolithography, etching, deposition, ion implantation, and cleaning are performed to manufacture a semiconductor device. Among these processes, photolithography plays an important role in achieving high integration of semiconductor devices in a process for forming a pattern.

The photolithography process consists of a coating process, an exposure process, and a developing process. The baking process is performed before the exposure process after the application process and after the exposure process. The baking process is a process of heat-treating the substrate, in which the substrate placed on the heating plate is heat-treated by the heat supplied from the heater. Thus, the heating chamber in which the baking process is performed is performed at a higher temperature than the other chambers.

1 is a perspective view showing a general transport unit 1 for transporting a substrate. Referring to FIG. 1, generally, an application process of supplying a liquid to a substrate and applying a photoresist liquid to a surface of the substrate is performed in a chamber in which a coating process is performed for precise removal at the edge of the substrate, The transfer of the substrate between the process chambers in the substrate processing apparatus in which the photolithography process is performed is carried out by the transfer unit 1 of the type which holds and conveys the substrate in a vacuum manner. The transfer unit 1 of the type that holds and conveys the substrate in a vacuum system can determine whether the substrate is positively positioned on the hand 2 by using the sensor 3, It is less likely to be adsorbed by the adsorption pad 4 and depart from the correct position.

However, the adsorption pad 4 provided for adsorption with the substrate is generally provided with a resin material such as polyetheretheretherone (PEEK) (polyetheretheretheretone), so that the substrate 4 can be transferred to the bake chamber in which the process is performed at a relatively high process temperature. There is a high possibility that the adsorption pad 4 is deformed due to heat, which causes a decrease in the lifetime of the adsorption pad 4 and a decrease in accuracy of edge bead removal in the application step.

The present invention is intended to provide an apparatus and a method capable of minimizing the deformation of the adsorption pad.

Further, the present invention is to provide an apparatus and a method capable of increasing the lifetime of the adsorption pad.

Further, the present invention is intended to provide an apparatus and a method capable of performing precise removal of edge beads.

The problems to be solved by the present invention are not limited thereto, and other matters not mentioned can be clearly understood by those skilled in the art from the following description.

The present invention provides a substrate processing apparatus. According to one embodiment, a substrate processing apparatus for processing a substrate includes: a plurality of processing units for processing a substrate; And a transfer unit for transferring the substrate between the processing units, wherein the transfer unit comprises: a first hand for holding and conveying the substrate in a vacuum system; And a second hand for holding and conveying the substrate in a manner other than vacuum.

The processing unit comprising: a first processing chamber; And a second processing chamber, wherein the transfer unit further includes a controller for controlling the operation of the transfer unit, wherein the first processing chamber is provided as a liquid processing chamber for liquid-processing a substrate, Wherein the second processing chamber is provided with a heating chamber for heating the substrate, and wherein the controller is configured such that the introduction of the substrate into the first processing chamber is performed by the first hand, the transfer of the substrate into the second processing chamber, And the carry-out of the substrate from the processing chamber is controlled by the second hand.

The controller controls the transport unit such that the transport of the substrate from the first processing chamber is performed by the second hand.

The second process chamber is operated at a higher temperature than the first process chamber.

The second hand is provided in a larger number than the first hand.

The first hand includes: a hand base having a vacuum hole; And a suction pad made of resin and formed on the hand base to protrude from the hand base and having a through hole aligned with the vacuum hole.

The first hand and the second hand are arranged vertically to each other, wherein the first hand is provided higher than the second hand.

The second hand includes: a hand base provided in an arc shape surrounding the substrate; And a plurality of supports protruding from an inner surface of the hand base and supporting a bottom edge region of the substrate.

The second hand comprises: a hand base; And a guide protrusion protruding from the hand base and restricting lateral movement of the substrate in the right position on the hand base.

Further, the present invention provides a transport unit. According to one embodiment, a transfer unit for transferring a substrate between processing units for processing a substrate includes: a first hand for holding and conveying the substrate in a vacuum system; And a second hand for holding and transporting the substrate in a manner other than vacuum.

The first hand includes: a hand base having a vacuum hole; And a suction pad made of resin and formed on the hand base to protrude from the hand base and having a through hole aligned with the vacuum hole.

The first hand and the second hand are arranged vertically to each other, wherein the first hand is provided higher than the second hand.

The present invention also provides a substrate processing method. According to an embodiment, there is provided a substrate processing method for processing a substrate by transporting a substrate between processing units for processing a substrate, the processing unit including a first processing chamber and a second processing in which a process different from the first processing chamber is performed Wherein the substrate processing method further comprises: a first carrying-in step of bringing the substrate into the first chamber; A first carrying-out step of carrying the substrate out of the first chamber; A second carrying-in step of bringing the substrate into the second chamber; And a second carry-out step of taking out the substrate from the second chamber, wherein at least one of the first carry-in step, the first take-out step, the second carry-in step and the second take- And at least the other hand is performed by the second hand, the first hand holding and transporting the substrate in a vacuum, and the second hand holding and transporting the substrate in a manner other than vacuum.

Wherein the first processing chamber is provided with a liquid processing chamber for liquid-processing a substrate, the second processing chamber is provided with a heating chamber for heating a substrate, the first loading step is performed by the first hand, The second bring-in step and the second take-out step are performed by the second hand.

The first take-out step is performed by the second hand.

The second process chamber is operated at a higher temperature than the first process chamber.

Wherein the first carrying-in step, the first carrying-out step, the second carrying-in step and the second carrying-out step are performed sequentially with each other, and the substrate processing method is performed between the first carrying-in step and the first carrying-out step A liquid processing step of subjecting the substrate to liquid processing; And a heating step performed between the second carry-in step and the second carry-out step and heating the substrate.

According to one embodiment of the present invention, the apparatus and method of the present invention can minimize deformation of the adsorption pad.

Further, according to one embodiment of the present invention, the apparatus and method of the present invention can increase the lifetime of the adsorption pad.

Further, the present invention is intended to provide an apparatus and a method capable of performing precise removal of edge beads.

1 is a perspective view showing a general transport unit for transporting a substrate.
2 is a plan view showing a substrate processing apparatus according to an embodiment of the present invention.
FIG. 3 is a view of the substrate processing apparatus of FIG. 2 viewed from the direction AA.
Fig. 4 is a view of the substrate processing apparatus of Fig. 2 viewed from the BB direction.
Fig. 5 is a side view schematically showing the transport unit of Fig. 2;
Fig. 6 is a perspective view showing an embodiment of the first hand of Fig. 5;
7 is a perspective view showing an embodiment of the second hand of Fig. 5
FIG. 8 is a perspective view showing another embodiment of the second hand of FIG. 5; FIG.
9 is a flowchart showing a substrate processing method according to an embodiment of the present invention.
10 is a view showing a path through which a substrate is moved by the substrate processing method of FIG.
11 is a perspective view showing a substrate processing apparatus according to another embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The embodiments of the present invention can be modified in various forms, and the scope of the present invention should not be construed as being limited to the following embodiments. This embodiment is provided to more fully describe the present invention to those skilled in the art. Thus, the shape of the elements in the figures has been exaggerated to emphasize a clearer description.

The apparatus of this embodiment is an apparatus for processing a substrate, and is used to perform a photolithography process on a substrate such as a semiconductor wafer or a flat panel display panel. Particularly, the apparatus of the present embodiment is used to perform a coating process and a developing process on a substrate. Hereinafter, a case where a wafer is used as a substrate will be described as an example.

2 to 4 are views schematically showing a substrate processing apparatus 10 according to an embodiment of the present invention. 2 is a top view of the substrate processing apparatus 10, FIG. 3 is a view of the substrate processing apparatus 10 of FIG. 2 viewed from the direction AA, FIG. 4 is a view of the substrate processing apparatus 10 of FIG. Fig.

2 to 4, the substrate processing apparatus 10 includes a load port 100, an index module 200, a buffer module 300, an application and development module 400, and an interface module 700 . The load port 100, the index module 200, the buffer module 300, the application and development module 400, and the interface module 700 are sequentially arranged in one direction in one direction.

Hereinafter, the direction in which the load port 100, the index module 200, the buffer module 300, the application and development module 400, and the interface module 700 are arranged is referred to as a first direction 12. A direction perpendicular to the first direction 12 is referred to as a second direction 14 and a direction perpendicular to the first direction 12 and the second direction 14 is referred to as a third direction 16, Quot;

The wafer W is moved in a state accommodated in the cassette 20. The cassette 20 has a structure that can be sealed from the outside. For example, as the cassette 20, a front open unified pod (FOUP) having a door at the front can be used.

Hereinafter, the load port 100, the index module 200, the buffer module 300, the application and development module 400, and the interface module 700 will be described.

The load port 100 has a mounting table 120 on which a cassette 20 accommodating wafers W is placed. A plurality of mounts 120 are provided, and the mounts 120 are arranged in a line along the second direction 14. In Fig. 2, four placement tables 120 are provided.

The index module 200 transfers the wafer W between the cassette 20 and the buffer module 300 placed on the table 120 of the load port 100. The index module 200 includes a frame 210, an index robot 220, and a guide rail 230. The frame 210 is provided generally in the shape of an inner rectangular parallelepiped and is disposed between the load port 100 and the buffer module 300. The frame 210 of the index module 200 may be provided at a lower height than the frame 310 of the buffer module 300 described later. The index robot 220 and the guide rail 230 are disposed within the frame 210. The index robot 220 is a four-axis drive system in which the hand 221 directly handling the wafer W is movable in the first direction 12, the second direction 14 and the third direction 16, This is a possible structure. The index robot 220 includes a hand 221, an arm 222, a support 223, and a pedestal 224. The hand 221 is fixed to the arm 222. The arm 222 is provided with a stretchable structure and a rotatable structure. The support base 223 is disposed along the third direction 16 in the longitudinal direction. The arm 222 is coupled to the support 223 to be movable along the support 223. The support 223 is fixedly coupled to the pedestal 224. The guide rails 230 are provided so that their longitudinal direction is arranged along the second direction 14. The pedestal 224 is coupled to the guide rail 230 so as to be linearly movable along the guide rail 230. Further, although not shown, the frame 210 is further provided with a door opener for opening and closing the door of the cassette 20.

The buffer module 300 includes a frame 310, a first buffer 320, a second buffer 330, a cooling chamber 350, and a buffer robot 360. The frame 310 is provided in the shape of an inner rectangular parallelepiped and is disposed between the index module 200 and the application and development module 400. The first buffer 320, the second buffer 330, the cooling chamber 350, and the buffer robot 360 are located within the frame 310. The cooling chamber 350, the second buffer 330, and the first buffer 320 are sequentially disposed in the third direction 16 from below. The second buffer 330 and the cooling chamber 350 are located at a height corresponding to the coating module 401 of the coating and developing module 400 described later and the coating and developing module 400 at a height corresponding to the developing module 402. [ The buffer robot 360 is positioned at a distance from the second buffer 330, the cooling chamber 350, and the first buffer 320 in the second direction 14.

The first buffer 320 and the second buffer 330 temporarily store a plurality of wafers W, respectively. The second buffer 330 has a housing 331 and a plurality of supports 332. The supports 332 are disposed within the housing 331 and are provided spaced apart from each other in the third direction 16. One wafer W is placed on each support 332. The housing 331 is provided with an index robot 220, a buffer robot 360 and a developing robot 482 of a development module 402 described later, which carry the wafers W into or out of the support 332 in the housing 331 A direction in which the index robot 220 is provided, a direction in which the buffer robot 360 is provided, and an opening (not shown) in the direction in which the developing robot 482 described later is provided. The first buffer 320 has a structure substantially similar to that of the second buffer 330. The housing 321 of the first buffer 320 has an opening in the direction in which the buffer robot 360 is provided and in a direction in which the transport unit 5000 located in the application module 401 described later is provided. The number of supports 322 provided in the first buffer 320 and the number of supports 332 provided in the second buffer 330 may be the same or different. According to one example, the number of supports 332 provided in the second buffer 330 may be greater than the number of supports 322 provided in the first buffer 320.

The buffer robot 360 transfers the wafer W between the first buffer 320 and the second buffer 330. The buffer robot 360 includes a hand 361, an arm 362, and a support base 363. The hand 361 is fixed to the arm 362. The arm 362 is provided in a stretchable configuration so that the hand 361 is movable along the second direction 14. The arm 362 is coupled to the support 363 so as to be linearly movable along the support 363 in the third direction 16. The support base 363 has a length extending from a position corresponding to the second buffer 330 to a position corresponding to the first buffer 320. The support 363 may be provided longer in the upper or lower direction. The buffer robot 360 may be provided such that the hand 361 is driven only in two directions along the second direction 14 and the third direction 16. [

The cooling chambers 350 cool the wafers W, respectively. The cooling chamber 350 includes a housing 351 and a cooling plate 352. The cooling plate 352 has an upper surface on which the wafer W is placed and a cooling means 353 for cooling the wafer W. [ As the cooling means 353, various methods such as cooling with cooling water and cooling using a thermoelectric element can be used. In addition, the cooling chamber 350 may be provided with a lift pin assembly for positioning the wafer W on the cooling plate 352. The housing 351 is provided with the index robot 220 and the developing unit 402. The housing 351 is provided with the index robot 220, And has an opening in the direction in which the robot 482 is provided. Further, the cooling chamber 350 may be provided with doors for opening and closing the above-described opening.

The coating and developing module 400 performs a process of applying a photoresist on the wafer W before the exposure process and a process of developing the wafer W after the exposure process. The application and development module 400 has a generally rectangular parallelepiped shape. The coating and developing module 400 has a coating module 401 and a developing module 402. The application module 401 and the development module 402 are arranged so as to be partitioned into layers with respect to each other. According to one example, the application module 401 is located on top of the development module 402.

The application module 401 includes a step of applying a photosensitive liquid such as a photoresist to the wafer W and a heat treatment step such as heating and cooling for the wafer W before and after the resist application step. The application module 401 has a resist application chamber 410, a bake chamber 420, and a transfer chamber 430. The resist application chamber 410, the bake chamber 420, and the transfer chamber 430 are sequentially disposed along the second direction 14. [ A plurality of resist coating chambers 410 are provided, and a plurality of resist coating chambers 410 are provided in the first direction 12 and the third direction 16, respectively. A plurality of bake chambers 420 are provided in the first direction 12 and the third direction 16, respectively.

The transfer chamber 430 is positioned in parallel with the first buffer 320 of the first buffer module 300 in the first direction 12. A transport unit 5000 is located in the transport chamber 430. The transfer chamber 430 has a generally rectangular shape.

The transfer unit 5000 transfers the substrate between processing units for processing the substrate. According to one embodiment, the processing unit in which the transport unit 5000 transports the substrate includes a first processing chamber and a second processing chamber. The second process chamber is operated at a higher temperature than the first process chamber. For example, the first processing chamber is provided with a liquid processing chamber for liquid processing a substrate, such as the resist application chamber 410 of FIG. 2, and the second processing chamber is heated by heating the substrate, such as the bake chamber 420 of FIG. 2 As shown in FIG. Hereinafter, it is assumed that the first process chamber is the resist application chamber 410 and the second process chamber is the bake chamber 420. [

5 is a side view schematically showing the transport unit 5000 of Fig. 5, the transport unit 5000 includes a guide rail 5100, a pedestal 5200, a support shaft 5300, a base 5400, a first hand 5500, a second hand 5600, and a controller (not shown) 5700).

The guide rails 5100 are arranged so that their longitudinal directions are parallel to the first direction 12. The guide rail 5100 guides the transport unit 5000 to move linearly in the first direction 12. The pedestal 5200 is coupled to the guide rail 5100 so as to be movable along the guide rail 5100. The support shaft 5300 is fixedly coupled to the pedestal 5200. The base 5400 is positioned on the upper surface of the support shaft 5300. The base 5400 is coupled to the support shaft 5300 so that the shaft can rotate. The base 5400 can be pivoted about a third axis 16 relative to the support axis 5300. The base 5400 is provided to have a generally rectangular parallelepiped shape. The base 5400 is provided such that its longitudinal direction is directed in the horizontal direction. The base 5400 is provided with a guide 5410. The guide 5410 guides the moving direction of the hand 5500 and 5600 so that the hand 5500 and 5600 can linearly move along the longitudinal direction of the base 5400. [ A plurality of guides 5410 are provided. According to one example, the guide 5410 may be provided in the same number as the hands 5500 and 5600. Each guide is provided so that its longitudinal direction is parallel to the base 5410.

6 is a perspective view showing the first hand 5500 of FIG. Referring to FIG. 6, the first hand 5500 holds and conveys the substrate in a vacuum manner. According to one embodiment, the first hand 5500 includes a hand base 5510 and an adsorption pad 5520. In the hand base 5510, a vacuum hole is formed which sucks an external gas to adsorb the substrate and forms a vacuum pressure. The suction pad 5520 is formed with a through hole 5521 aligned with the vacuum hole of the hand base 5510. The adsorption pad 5520 is provided with a resilient resin material having a high coefficient of surface friction to seal it from the substrate. For example, the adsorption pad 5520 may be provided with a polyether ether ketone (PEEK) material. The adsorption pad 5520 may be provided on the hand base 5510 so as to protrude from the hand base 5510. Also, the second hand 5600 may be provided with a sensor 5530 capable of detecting whether the substrate placed on the second hand 5600 is in a correct position. Generally, sensors 5530 are provided on top of the second hand 5600.

7 is a perspective view illustrating an embodiment of the second hand 5600 of FIG. Referring to Fig. 7, the second hand 5600 holds and conveys the substrate in a manner other than vacuum. According to one embodiment, the second hand 5600 may be provided as an edge grip type hand for carrying the substrate by supporting the lower edge of the edge of the substrate. For example, the second hand 5600 includes a hand base 5610 and a support portion 5620. The hand base 5610 is provided in an arc shape surrounding the substrate when the substrate is placed on the second hand 5600. The support portion 5620 supports the edge region of the lower surface of the substrate placed on the second hand 5600. The support portion 5620 is provided to protrude from the inner surface of the hand base 5610. The support portion 5620 may be provided to surround a plurality of substrates placed on the second hand 5600.

FIG. 8 is a perspective view showing another embodiment of the second hand 5600 of FIG. Referring to FIG. 8, the second hand 5600 according to another embodiment may be provided as a fork type hand. For example, the second hand 5600 includes a hand base 5630 and a guide projection 5640. The hand base 5630 supports the substrate on the hand base 5630. The hand base 5630 is provided in the form of a fork. One end of the hand base 5630 is connected to the base 5400 and the other end is bifurcated to extend along the longitudinal direction of the base 5400. The guide protrusion 5640 protrudes from the upper surface of the hand base 5630 and restricts the lateral movement of the substrate placed in the correct position on the hand base 5630. [ The guide protrusions 5640 may be provided to be arranged so as to surround a plurality of substrates spaced apart from each other and placed in position on the hand base 5630.

The first hand 5500 and the second hand 5600 are arranged vertically to each other. In general, the first hand 5500 is provided with a sensor 5630 for determining whether the substrate is properly positioned on the upper portion of the hand base 5610, so that a space above the predetermined distance is required. Accordingly, when the first hand 5500 and the second hand 5600 are arranged vertically to each other, the first hand 5500 and the second hand 5600 are arranged to narrow the gap between the hands, ≪ / RTI >

Referring to Figs. 2 to 5, the controller 5700 controls the operation of the transfer unit 5000. Fig. According to one embodiment, the controller 5700 performs the transfer of the substrate into the first processing chamber 410 by the first hand 5500 and transfers the substrate into the second processing chamber 420, The transfer of the substrate from the transfer unit 420 is controlled by the second hand 5600. In addition, the controller 5700 can control the transfer unit 5000 so that the transfer of the substrate from the first processing chamber 410 is performed by the second hand 5600.

Hereinafter, a substrate processing method according to an embodiment of the present invention will be described using the substrate processing apparatus 10 provided with the transfer unit 5000 described above. 9 is a flowchart showing a substrate processing method according to an embodiment of the present invention. 10 is a view showing a path through which a substrate is moved by the substrate processing method of FIG. 9 and 10, the substrate processing method of the present invention is a method for transporting a substrate between processing units for processing the substrate. The carrying method includes a first carrying-in step S10, a liquid processing step S20, a first carrying-out step S30, a second carrying-in step S40, a heating step S50 and a second carrying out step S60 . The first carry-in step S10, the liquid processing step S20, the first carry-out step S30, the second carry-in step S40, the heating step S50 and the second carry-out step S60 are sequentially performed with respect to each other . At least one of the first carry-in step S10, the first carry-out step S30, the second carry-in step S40 and the second carry-out step S60 is performed by the first hand 5500, Is performed by the second hand (5600).

According to one embodiment, in the first carrying-in step S10, the substrate is transferred from the first buffer 320 to the first processing chamber. The first process chamber may be the resist application chamber 410. In this case, the controller 5700 controls the transport unit 5000 so that the first carry-in step (S10) is performed by the first hand 5500. In the case of applying the resist to the substrate, since it is required to precisely remove the edge beads uniformly along the periphery of the substrate, the substrate is transported using the first hand 5500 so as to accurately position the substrate do. Since the first hand 5500 adsorbs the substrate in vacuum, the substrate is less likely to be dislodged when moving the substrate, and the sensor 5530 is generally provided, so that the substrate can be positioned more precisely in the correct position of the hand.

Thereafter, in the liquid processing step S20, a resist is applied to the substrate in the resist coating chamber 410. Then, In the first take-out step S30, the substrate on which the resist coating has been completed is taken out of the resist coating chamber 410. [ In the second carrying-in step S40, the substrate carried out from the resist coating chamber 410 is carried into the bake chamber 420. [ In the heating step (S50), a process of heating the substrate provided in the bake chamber (420) is performed. In the second take-out step S60, the substrate on which the heating process has been completed is taken out of the bake chamber 420 and taken out to the first buffer 320. [ The controller 5700 controls the transport unit 5000 so that the first take-out step S30, the second carry-in step S40 and the second take-out step S60 are performed by the second hand 5600. [ The second carry-in step S40 and the second carry-out step S60 are carried out at a temperature higher than the temperature at which the bake chamber 420 can deform the adsorption pad 5520 of the first hand 5500, By the heat sink 5600, heat deformation of the adsorption pad 5520 can be prevented. In general, since the heating process is performed in the baking chamber 420 after the resist application is completed, the substrate is transferred into the baking chamber 420 after the first carrying-out step S30 and thereafter, Is performed by the second hand 5600 to prevent deformation by heat of the second hand 5600. [

5, in the case of the substrate processing apparatus 10 performing the photolithography process on the substrate, in general, a plurality of bake chambers 420 are provided in comparison with the resist application chamber 410, Since step S30 is also performed by the second hand 5600, the second hand 5600 is provided in a larger number than the first hand 5500. [

Generally, in the photolithography process, the process in the bake chamber 420 is performed at a temperature higher than the temperature capable of causing thermal deformation to the material of the general adsorption pad 5520, and the process in the resist application chamber 410 is performed as described above Similarly, it is required to precisely position the substrate in place. Therefore, as described above, the first carrying-in step S10 is carried out by the first hand 5500, and the first carrying-out step S30, the second carrying-in step S40 and the second carrying-out step S60 By being performed by the second hand 5600, thermal deformation of the adsorption pad can be minimized. Therefore, the lifetime of the adsorption pad can be increased, and precise edge bead removal can be performed in the resist coating process.

Referring again to FIGS. 2 to 4, the resist coating chambers 410 all have the same structure. However, the types of the photoresist used in each of the resist coating chambers 410 may be different from each other. As an example, a chemical amplification resist may be used as the photoresist. The resist coating chamber 410 applies a photoresist on the wafer W. [ The resist coating chamber 410 has a housing 411, a support plate 412, and a nozzle 413. The housing 411 has a cup shape with an open top. The support plate 412 is located in the housing 411 and supports the wafer W. [ The support plate 412 is rotatably provided. The nozzle 413 supplies the photoresist onto the wafer W placed on the support plate 412. The nozzle 413 has a circular tube shape and can supply photoresist to the center of the wafer W. [ Alternatively, the nozzle 413 may have a length corresponding to the diameter of the wafer W, and the discharge port of the nozzle 413 may be provided as a slit. In addition, the resist coating chamber 410 may further be provided with a nozzle 414 for supplying a cleaning liquid such as deionized water to clean the surface of the wafer W coated with the photoresist.

The bake chamber 420 heat-treats the wafer W. For example, the bake chambers 420 may be formed by a prebake process in which the wafer W is heated to a predetermined temperature to remove organic matter and moisture on the surface of the wafer W before the photoresist is applied, A soft bake process is performed after coating the wafer W on the wafer W, and a cooling process for cooling the wafer W after each heating process is performed.

The bake chamber 420 has a heating unit 421 or a cooling plate 422. Cooling plate 422 is provided with cooling means 424, such as cooling water or a thermoelectric element. Some of the bake chambers 420 may include only the heating unit 421 and the other may include only the cooling plate 422. [ Optionally, the heating unit 421 and the cooling plate 422 may be provided together in one bake chamber 420.

The developing module 402 includes a developing process of supplying a developing solution to obtain a pattern on the wafer W to remove a part of the photoresist and a heat treatment process such as heating and cooling performed on the wafer W before and after the developing process . The development module 402 has a development chamber 460, a bake chamber 470, and a transfer chamber 480. The development chamber 460, the bake chamber 470, and the transfer chamber 480 are sequentially disposed along the second direction 14. The development chamber 460 and the bake chamber 470 are positioned apart from each other in the second direction 14 with the transfer chamber 480 therebetween. A plurality of developing chambers 460 are provided, and a plurality of developing chambers 460 are provided in the first direction 12 and the third direction 16, respectively. A plurality of bake chambers 470 are provided in the first direction 12 and the third direction 16, respectively.

The transfer chamber 480 is positioned in parallel with the second buffer 330 of the first buffer module 300 in the first direction 12. In the transfer chamber 480, the developing robot 482 and the guide rail 483 are positioned. The delivery chamber 480 has a generally rectangular shape. The developing robot 482 transfers the wafer W between the bake chambers 470 and the developing chambers 460 and between the second buffer 330 of the first buffer module 300 and the cooling chamber 350 . The guide rail 483 is arranged such that its longitudinal direction is parallel to the first direction 12. The guide rail 483 guides the developing robot 482 to linearly move in the first direction 12. The developing sub-robot 482 has a hand 484, an arm 485, a supporting stand 486, and a pedestal 487. The hand 484 is fixed to the arm 485. The arm 485 is provided in a stretchable configuration to allow the hand 484 to move in a horizontal direction. The support 486 is provided so that its longitudinal direction is disposed along the third direction 16. The arm 485 is coupled to the support 486 such that it is linearly movable along the support 486 in the third direction 16. The support table 486 is fixedly coupled to the pedestal 487. The pedestal 487 is coupled to the guide rail 483 so as to be movable along the guide rail 483. Alternatively, the developing robot 482 may be provided in a form similar to the transfer unit 5000 provided in the application unit 401. [

The development chambers 460 all have the same structure. However, the types of developers used in the respective developing chambers 460 may be different from each other. The development chamber 460 removes a region of the photoresist on the wafer W irradiated with light. At this time, the area of the protective film irradiated with the light is also removed. Depending on the type of selectively used photoresist, only the areas of the photoresist and protective film that are not irradiated with light can be removed.

The development chamber 460 has a housing 461, a support plate 462, and a nozzle 463. The housing 461 has a cup shape with an open top. The support plate 462 is placed in the housing 461 and supports the wafer W. [ The support plate 462 is rotatably provided. The nozzle 463 supplies the developer onto the wafer W placed on the support plate 462. The nozzle 463 has a circular tube shape and can supply developer to the center of the wafer W. [ Alternatively, the nozzle 463 may have a length corresponding to the diameter of the wafer W, and the discharge port of the nozzle 463 may be provided as a slit. Further, the developing chamber 460 may further be provided with a nozzle 464 for supplying a cleaning liquid such as deionized water to clean the surface of the wafer W to which the developer is supplied.

The bake chamber 470 of the developing module 402 heat-treats the wafer W. [ For example, the bake chambers 470 may include a post-bake process for heating the wafer W before the development process is performed, a hard bake process for heating the wafer W after the development process is performed, And a cooling step for cooling the wafer. The bake chamber 470 has a cooling plate 471 or a heating plate 472. The cooling plate 471 is provided with a cooling means 473 such as a cooling water or a thermoelectric element. Or the heating plate 472 is provided with a heating means 474 such as a hot wire or a thermoelectric element. Some of the bake chambers 470 may include only the cooling plate 471 and the other portion may include only the heating plate 472. [ Alternatively, the cooling plate 471 and the heating plate 472 may be provided in one baking chamber 470. The configuration of the bake chamber 470 of the developing module 402 is similar to that of the bake chamber of the application module 401, so that detailed description thereof will be omitted.

In the above-described coating and developing module 400, the coating module 401 and the developing module 402 may be provided so as to be separated from each other. In addition, the application module 401 and the development module 402 may have the same chamber arrangement as viewed from above.

The interface module 700 transfers the wafer W. The interface module 700 includes a frame 710, a first buffer 720, a second buffer 730, and an interface robot 740. The first buffer 720, the second buffer 730, and the interface robot 740 are located within the frame 710. The first buffer 720 and the second buffer 730 are spaced apart from each other by a predetermined distance and are stacked on each other. The first buffer 720 is disposed higher than the second buffer 730.

The interface robot 740 is spaced apart from the first buffer 720 and the second buffer 730 in the second direction 14. The interface robot 740 carries the wafer W between the first buffer 720, the second buffer 730 and the exposure apparatus 900.

The first buffer 720 temporarily stores the processed wafers W before they are transferred to the exposure apparatus 900. The second buffer 730 temporarily stores the processed wafers W in the exposure apparatus 900 before they are moved. The first buffer 720 has a housing 721 and a plurality of supports 722. The supports 722 are disposed within the housing 721 and are provided spaced apart from each other in the third direction 16. One wafer W is placed on each support 722. The housing 721 has an opening in the direction in which the interface robot 740 is provided so that the interface robot 740 can bring the wafer W into or out of the support 722 into the housing 721. The second buffer 730 has a structure similar to that of the first buffer 720. The interface module may be provided with only buffers and robots as described above without providing a chamber to perform a predetermined process on the wafer.

Alternatively, the transfer unit (5000 in FIG. 5) according to the embodiment of the present invention may be applied to an apparatus for supplying a treatment liquid to a rotating substrate to deposit a film on the substrate. 11 is a perspective view showing a substrate processing apparatus 30 according to another embodiment of the present invention. Referring to FIGS. 5 and 11, the substrate processing apparatus 30 performs a process of depositing a film on a substrate by supplying a treatment liquid to a substrate to be rotated, unlike an apparatus performing a resist coating and developing process. The substrate processing apparatus 30 includes an index section 40 and a processing section 50.

The index section 40 provides the processing section 50 with the substrate before the processing.

In the processing section 50, a process of depositing a film on a substrate and a process of heat-treating the substrate on which the deposition process is completed are performed. The processing section 50 includes a process liquid application chamber 51, a bake chamber 52, and a transfer chamber 53.

In the treatment liquid application chamber 51, a treatment liquid is supplied to the rotating substrate to deposit a film on the substrate, and in the bake chamber 52, a step of heating the substrate to which the treatment liquid is applied is performed. A plurality of the treatment liquid application chamber 51 and the bake chamber 52 may be provided so as to be stacked in the vertical direction.

A transport unit 5000 is located in the transport chamber 53. The transfer unit 5000 transfers the substrate between the processing units of the substrate processing apparatus 30. [ In this case, the above-described first process chamber is the process liquid application chamber 51, and the above-described second process chamber may be the bake chamber 52. The configuration of the other transfer unit 5000 and the method of transferring the substrate using the transfer unit 5000 are similar to those of the substrate processing apparatuses of Figs. 2 to 5.

In the foregoing detailed description, the substrate processing apparatus according to the embodiment of the present invention is described as an apparatus for performing a resist coating and baking process on a substrate, or an apparatus for performing a coating process and a baking process. However, the present invention is not limited to the above-described example, and may be applied to a case where the temperature at which the substrate is processed is not more than the temperature at which thermal deformation of the processing unit and the adsorption pad occurs, Is applicable to all the apparatuses provided with the processing unit of Fig.

10: substrate processing apparatus 410: first processing chamber, resist coating chamber
420: second processing chamber, bake chamber 5000: transfer unit
5100: guide rail 5200: pedestal
5300: support shaft 5400: base
5500: first hand 5520: adsorption pad
5600: second hand 5700: controller

Claims (17)

delete An apparatus for processing a substrate,
A plurality of processing units for processing the substrate;
And a transfer unit for transferring the substrate between the processing units,
The transfer unit
A first hand for holding and conveying the substrate in a vacuum system;
And a second hand for holding and transporting the substrate in a manner other than vacuum,
The processing unit includes:
A first processing chamber; And a second processing chamber,
The transfer unit
And a controller for controlling the operation of the transfer unit,
Wherein the first processing chamber is provided with a liquid processing chamber for liquid-processing the substrate,
The second processing chamber is provided with a heating chamber for heating the substrate,
The controller comprising:
The bringing-in of the substrate into the first processing chamber is performed by the first hand,
Wherein the control unit controls the transfer unit such that transfer of the substrate into the second processing chamber and transfer of the substrate from the second processing chamber are performed by the second hand. 3. The method of claim 2,
Wherein the controller controls the transfer unit such that transfer of the substrate from the first processing chamber is performed by the second hand. 3. The method of claim 2,
Wherein the second processing chamber is operated at a higher temperature than the first processing chamber. 5. The method according to any one of claims 2 to 4,
Wherein the second hand is provided in a larger number than the first hand. 5. The method according to any one of claims 2 to 4,
The first hand
A hand base having a vacuum hole formed therein;
And a suction pad made of a resin material provided on the hand base to protrude from the hand base and having a through hole aligned with the vacuum hole. The method according to claim 6,
Wherein the first hand and the second hand are arranged in a vertical direction,
Wherein the first hand is provided higher than the second hand. 5. The method according to any one of claims 2 to 4,
The second hand
A hand base provided in an arc shape surrounding the substrate; And
And a plurality of support portions protruding from an inner side surface of the hand base to support a bottom edge region of the substrate. 5. The method according to any one of claims 2 to 4,
The second hand
Hand base; And
And a guide projection projecting from the hand base and restricting lateral movement of the substrate placed in the correct position on the hand base. delete delete delete delete A substrate processing method for processing a substrate by transporting the substrate between processing units for processing the substrate,
Wherein the processing unit includes a first processing chamber and a second processing chamber in which a process different from the first processing chamber is performed,
The substrate processing method includes:
A first carrying-in step of bringing the substrate into the first processing chamber;
A first unloading step of unloading the substrate from the first processing chamber;
A second carrying-in step of bringing the substrate into the second processing chamber; And
And a second unloading step of unloading the substrate from the second processing chamber,
Wherein at least one of the first bring-in step, the first carry-out step, the second carry-in step and the second take-out step is performed by a first hand, at least another one is performed by a second hand,
The first hand holds and conveys the substrate in a vacuum system,
The second hand holds and conveys the substrate in a manner other than vacuum,
Wherein the first processing chamber is provided with a liquid processing chamber for liquid-processing the substrate,
Wherein the second processing chamber is provided with a heating chamber for heating the substrate,
Wherein the first fetching step is performed by the first hand,
Wherein the second bring-in step and the second take-out step are performed by the second hand. 15. The method of claim 14,
Wherein the first take-out step is performed by the second hand. 15. The method of claim 14,
Wherein the second process chamber is performed at a temperature higher than the first process chamber. 17. The method according to any one of claims 14 to 16,
The first carry-in step, the first carry-out step, the second carry-in step, and the second carry-out step are sequentially performed with respect to each other,
A liquid processing step performed between the first bring-in step and the first take-out step, the liquid processing step of subjecting the substrate to liquid processing; And
And a heating step performed between the second bring-in step and the second take-out step, wherein the heating step of heating the substrate.
KR1020150150384A 2015-10-28 2015-10-28 Transfer unit, apparatus for treating substrate including the same and method for treating substrate KR101706735B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020150150384A KR101706735B1 (en) 2015-10-28 2015-10-28 Transfer unit, apparatus for treating substrate including the same and method for treating substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020150150384A KR101706735B1 (en) 2015-10-28 2015-10-28 Transfer unit, apparatus for treating substrate including the same and method for treating substrate

Publications (1)

Publication Number Publication Date
KR101706735B1 true KR101706735B1 (en) 2017-02-14

Family

ID=58121223

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020150150384A KR101706735B1 (en) 2015-10-28 2015-10-28 Transfer unit, apparatus for treating substrate including the same and method for treating substrate

Country Status (1)

Country Link
KR (1) KR101706735B1 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102072999B1 (en) * 2018-08-21 2020-02-04 세메스 주식회사 substrate processing apparatus and substrate processing method
KR20210003500A (en) * 2019-07-02 2021-01-12 세메스 주식회사 Transferring unit and Apparatus for treating substrate
CN112652563A (en) * 2019-10-11 2021-04-13 细美事有限公司 Apparatus for transferring substrate and apparatus for processing substrate

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2960181B2 (en) * 1991-02-15 1999-10-06 東京エレクトロン株式会社 Processing equipment
JP2002064057A (en) * 1993-12-24 2002-02-28 Tokyo Electron Ltd Treatment equipment
KR20070114040A (en) * 2006-05-25 2007-11-29 동경 엘렉트론 주식회사 Substrate conveying apparatus, substrate treating system and substrate conveying method
JP2013162029A (en) * 2012-02-07 2013-08-19 Tokyo Electron Ltd Substrate processing apparatus, substrate processing method and storage medium

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2960181B2 (en) * 1991-02-15 1999-10-06 東京エレクトロン株式会社 Processing equipment
JP2002064057A (en) * 1993-12-24 2002-02-28 Tokyo Electron Ltd Treatment equipment
KR20070114040A (en) * 2006-05-25 2007-11-29 동경 엘렉트론 주식회사 Substrate conveying apparatus, substrate treating system and substrate conveying method
JP2013162029A (en) * 2012-02-07 2013-08-19 Tokyo Electron Ltd Substrate processing apparatus, substrate processing method and storage medium

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102072999B1 (en) * 2018-08-21 2020-02-04 세메스 주식회사 substrate processing apparatus and substrate processing method
KR20210003500A (en) * 2019-07-02 2021-01-12 세메스 주식회사 Transferring unit and Apparatus for treating substrate
KR102315666B1 (en) * 2019-07-02 2021-10-21 세메스 주식회사 Transferring unit and Apparatus for treating substrate
CN112652563A (en) * 2019-10-11 2021-04-13 细美事有限公司 Apparatus for transferring substrate and apparatus for processing substrate

Similar Documents

Publication Publication Date Title
KR101908143B1 (en) Substrate processing apparatus and substrate processing method
KR101736854B1 (en) Substrate treating apparatus
KR20160017699A (en) Bake unit, substrate treating apparatus including the unit, and substrate treating method
KR101605721B1 (en) Bake apparatus and Apparatus for treating substrate
KR101706735B1 (en) Transfer unit, apparatus for treating substrate including the same and method for treating substrate
KR20180006710A (en) Apparatus for treating susbstrate
KR101927698B1 (en) Transfer robot, Substrate treating apparatus and substrate treating method
KR101757819B1 (en) Apparatus for treating substrate and method for treating substrate
KR20180001690A (en) bake apparatus a having the unit and method processing substrate by using thereof
KR101817216B1 (en) Apparatus and method for treating a substrate
KR102066044B1 (en) Substrate treating apparatus, index robot and substrate transferring method
KR20190042839A (en) Apparatus and Method for treating substrate
KR102000023B1 (en) Substrate treating apparatus
KR101697500B1 (en) Teaching method and substrate treating apparatus using the same
KR101681185B1 (en) Interface module, apparatus and method for treating substrate comprising the same
KR20180124204A (en) Member for suppliyng a substrate, Buffer unit, and Apparatus for treating a substrate
KR101776018B1 (en) Method for heating a substrate and Apparatus for treating a substrate
KR102582058B1 (en) Substrate processing equipment and substrate transfer method
KR101768518B1 (en) Transfer chamber, Apparatus for treating substrate, and method for trasnferring substrate
KR20170056224A (en) Bake apparatus and bake method
KR20160134926A (en) Method for applying a liquid and apparatus for treating a substrate
KR101721148B1 (en) Nozzle, Apparatus for treating substrate and method for applying chemicals
KR20160081010A (en) Bake unit, substrate treating apparatus including the unit, and substrate treating method
KR102233465B1 (en) Unit for transferring substrate, Apparatus and Method for treating substrate with the unit
KR20190034725A (en) Unit for supporting substrate, Apparatus for treating substrate, and Method for treating substrate

Legal Events

Date Code Title Description
E701 Decision to grant or registration of patent right
GRNT Written decision to grant