KR101704985B1 - 광전 반도체칩 - Google Patents

광전 반도체칩 Download PDF

Info

Publication number
KR101704985B1
KR101704985B1 KR1020167017756A KR20167017756A KR101704985B1 KR 101704985 B1 KR101704985 B1 KR 101704985B1 KR 1020167017756 A KR1020167017756 A KR 1020167017756A KR 20167017756 A KR20167017756 A KR 20167017756A KR 101704985 B1 KR101704985 B1 KR 101704985B1
Authority
KR
South Korea
Prior art keywords
semiconductor chip
quantum well
regions
active quantum
indium content
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020167017756A
Other languages
English (en)
Korean (ko)
Other versions
KR20160085909A (ko
Inventor
아드리안 스테판 아브라메스쿠
데시레 퀘렌
크리스토프 아이클러
마티아스 사바틸
스테판 룻젠
우에 스트라우스
Original Assignee
오스람 옵토 세미컨덕터스 게엠베하
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 오스람 옵토 세미컨덕터스 게엠베하 filed Critical 오스람 옵토 세미컨덕터스 게엠베하
Publication of KR20160085909A publication Critical patent/KR20160085909A/ko
Application granted granted Critical
Publication of KR101704985B1 publication Critical patent/KR101704985B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H01L33/06—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H01L31/0328—
    • H01L31/0336—
    • H01L31/072—
    • H01L31/109—
    • H01L33/32—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3407—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers characterised by special barrier layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3408—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers characterised by specially shaped wells, e.g. triangular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3425—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers comprising couples wells or superlattices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/222—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN heterojunction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/173—The laser chip comprising special buffer layers, e.g. dislocation prevention or reduction
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/949—Radiation emitter using nanostructure
    • Y10S977/95—Electromagnetic energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/949—Radiation emitter using nanostructure
    • Y10S977/95—Electromagnetic energy
    • Y10S977/951—Laser

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
KR1020167017756A 2009-03-30 2010-03-10 광전 반도체칩 Active KR101704985B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102009015569.4A DE102009015569B9 (de) 2009-03-30 2009-03-30 Optoelektronischer Halbleiterchip
DE102009015569.4 2009-03-30
PCT/EP2010/053047 WO2010112310A1 (de) 2009-03-30 2010-03-10 Optoelektronischer halbleiterchip

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020117025789A Division KR101645057B1 (ko) 2009-03-30 2010-03-10 광전 반도체칩

Publications (2)

Publication Number Publication Date
KR20160085909A KR20160085909A (ko) 2016-07-18
KR101704985B1 true KR101704985B1 (ko) 2017-02-08

Family

ID=42340450

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020167017756A Active KR101704985B1 (ko) 2009-03-30 2010-03-10 광전 반도체칩
KR1020117025789A Active KR101645057B1 (ko) 2009-03-30 2010-03-10 광전 반도체칩

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020117025789A Active KR101645057B1 (ko) 2009-03-30 2010-03-10 광전 반도체칩

Country Status (8)

Country Link
US (2) US8908733B2 (https=)
EP (1) EP2415085B1 (https=)
JP (3) JP2012522390A (https=)
KR (2) KR101704985B1 (https=)
CN (2) CN102369606B (https=)
DE (1) DE102009015569B9 (https=)
TW (1) TWI452723B (https=)
WO (1) WO2010112310A1 (https=)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009015569B9 (de) * 2009-03-30 2023-06-29 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip
KR101712049B1 (ko) * 2010-11-17 2017-03-03 엘지이노텍 주식회사 발광 소자
JP5417307B2 (ja) * 2010-12-02 2014-02-12 株式会社東芝 半導体発光素子
JP2014067893A (ja) * 2012-09-26 2014-04-17 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物半導体発光素子
DE102013200507A1 (de) * 2013-01-15 2014-07-17 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement
DE102013104351B4 (de) 2013-04-29 2022-01-20 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterschichtenfolge und Verfahren zum Betreiben eines optoelektronischen Halbleiterchips
JP2015038949A (ja) * 2013-07-17 2015-02-26 株式会社東芝 半導体発光素子及びその製造方法
KR102019858B1 (ko) * 2013-07-18 2019-09-09 엘지이노텍 주식회사 발광소자 및 조명시스템
FR3009894B1 (fr) 2013-08-22 2016-12-30 Commissariat Energie Atomique Diode electroluminescente dont une zone active comporte des couches d'inn
JP6183060B2 (ja) * 2013-08-24 2017-08-23 日亜化学工業株式会社 半導体発光素子
WO2017119365A1 (ja) * 2016-01-08 2017-07-13 ソニー株式会社 半導体発光素子、表示装置および電子機器
DE102016117477B4 (de) * 2016-09-16 2026-03-26 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterschichtenfolge und optoelektronischer Halbleiterchip
JP7295371B2 (ja) * 2018-08-31 2023-06-21 日亜化学工業株式会社 半導体レーザ素子
JP6891865B2 (ja) * 2018-10-25 2021-06-18 日亜化学工業株式会社 発光素子
US10735354B1 (en) 2018-10-30 2020-08-04 Facebook, Inc. Photo space user interface facilitating contextual discussion between users of a social networking system
FR3096508A1 (fr) * 2019-05-21 2020-11-27 Aledia Dispositif optoélectronique à diodes électroluminescentes
US20240395966A1 (en) * 2023-05-24 2024-11-28 Wisconsin Alumni Research Foundation Light-emitters with group iii-nitride-based quantum well active regions having gan interlayers

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004356256A (ja) * 2003-05-28 2004-12-16 Sharp Corp 窒化物半導体発光素子及びその製造方法

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR950000119B1 (ko) * 1991-12-30 1995-01-09 주식회사 금성사 반도체 레이저의 구조
JP3543498B2 (ja) * 1996-06-28 2004-07-14 豊田合成株式会社 ３族窒化物半導体発光素子
DE19955747A1 (de) * 1999-11-19 2001-05-23 Osram Opto Semiconductors Gmbh Optische Halbleitervorrichtung mit Mehrfach-Quantentopf-Struktur
JP3876649B2 (ja) 2001-06-05 2007-02-07 ソニー株式会社 窒化物半導体レーザ及びその製造方法
KR100597532B1 (ko) 2001-11-05 2006-07-10 니치아 카가쿠 고교 가부시키가이샤 반도체 소자
US6618413B2 (en) * 2001-12-21 2003-09-09 Xerox Corporation Graded semiconductor layers for reducing threshold voltage for a nitride-based laser diode structure
JP2003229645A (ja) * 2002-01-31 2003-08-15 Nec Corp 量子井戸構造およびそれを用いた半導体素子ならびに半導体素子の製造方法
JP4047150B2 (ja) * 2002-11-28 2008-02-13 ローム株式会社 半導体発光素子
JP2004356356A (ja) 2003-05-29 2004-12-16 Oki Electric Ind Co Ltd 洗浄終了判定方法および洗浄装置
US6995389B2 (en) 2003-06-18 2006-02-07 Lumileds Lighting, U.S., Llc Heterostructures for III-nitride light emitting devices
JPWO2005020396A1 (ja) * 2003-08-26 2006-10-19 ソニー株式会社 ＧａＮ系ＩＩＩ−Ｖ族化合物半導体発光素子及びその製造方法
US7138648B2 (en) * 2003-12-17 2006-11-21 Palo Alto Research Center Incorporated Ultraviolet group III-nitride-based quantum well laser diodes
KR100513923B1 (ko) 2004-08-13 2005-09-08 재단법인서울대학교산학협력재단 질화물 반도체층을 성장시키는 방법 및 이를 이용하는 질화물 반도체 발광소자
DE102005035722B9 (de) * 2005-07-29 2021-11-18 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung
US20070045638A1 (en) 2005-08-24 2007-03-01 Lumileds Lighting U.S., Llc III-nitride light emitting device with double heterostructure light emitting region
JP5244297B2 (ja) 2006-04-12 2013-07-24 株式会社日立製作所 半導体発光素子
JP2008288397A (ja) 2007-05-17 2008-11-27 Eudyna Devices Inc 半導体発光装置
KR101459752B1 (ko) 2007-06-22 2014-11-13 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
DE102007044439B4 (de) 2007-09-18 2022-03-24 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip mit Quantentopfstruktur
JP5281162B2 (ja) * 2008-09-03 2013-09-04 テレフオンアクチーボラゲット エル エム エリクソン（パブル） 通信帯域を割当てるための方法及び関連する装置
DE102009015569B9 (de) * 2009-03-30 2023-06-29 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip
US8779412B2 (en) * 2011-07-20 2014-07-15 Samsung Electronics Co., Ltd. Semiconductor light emitting device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004356256A (ja) * 2003-05-28 2004-12-16 Sharp Corp 窒化物半導体発光素子及びその製造方法

Also Published As

Publication number Publication date
TW201044635A (en) 2010-12-16
DE102009015569B9 (de) 2023-06-29
DE102009015569A1 (de) 2010-10-07
CN104319331A (zh) 2015-01-28
CN104319331B (zh) 2017-05-10
JP2012522390A (ja) 2012-09-20
KR20160085909A (ko) 2016-07-18
TWI452723B (zh) 2014-09-11
CN102369606B (zh) 2014-10-01
KR20120009475A (ko) 2012-01-31
US8908733B2 (en) 2014-12-09
EP2415085A1 (de) 2012-02-08
JP2016157977A (ja) 2016-09-01
EP2415085B1 (de) 2019-01-02
JP5933775B2 (ja) 2016-06-15
US20130028281A1 (en) 2013-01-31
JP2015092636A (ja) 2015-05-14
DE102009015569B4 (de) 2023-03-23
CN102369606A (zh) 2012-03-07
US20150063395A1 (en) 2015-03-05
US9202971B2 (en) 2015-12-01
KR101645057B1 (ko) 2016-08-02
WO2010112310A1 (de) 2010-10-07

Similar Documents

Publication Publication Date Title
KR101704985B1 (ko) 광전 반도체칩
JP5711892B2 (ja) 白色発光ダイオード
EP2618388B1 (en) Light-emitting diode chip
US20140225059A1 (en) LED with Improved Injection Efficiency
KR101018217B1 (ko) 질화물 반도체 소자
US20160093771A1 (en) Patterned substrate design for layer growth
JP7791291B2 (ja) オプトエレクトロニクス半導体部品およびオプトエレクトロニクス半導体部品の製造方法
KR100604406B1 (ko) 질화물 반도체 소자
US10522699B2 (en) Optoelectronic semiconductor chip
KR20170080599A (ko) 반도체 발광 소자
KR101682345B1 (ko) 전기적으로 펌핑된 광전자 반도체 칩
KR102199635B1 (ko) 광전자 컴포넌트
US10840411B2 (en) Semiconductor layer sequence
KR102798941B1 (ko) 적색 발광 다이오드
WO2023159192A2 (en) Methods and structures to improve the performance of iii-nitride tunnel junctions
JP2022511728A (ja) 端面発光半導体レーザ

Legal Events

Date Code Title Description
A107 Divisional application of patent
A201 Request for examination
PA0104 Divisional application for international application

St.27 status event code: A-0-1-A10-A18-div-PA0104

St.27 status event code: A-0-1-A10-A16-div-PA0104

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

FPAY Annual fee payment

Payment date: 20200120

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

U11 Full renewal or maintenance fee paid

Free format text: ST27 STATUS EVENT CODE: A-4-4-U10-U11-OTH-PR1001 (AS PROVIDED BY THE NATIONAL OFFICE)

Year of fee payment: 10