DE102009015569B9 - Optoelektronischer Halbleiterchip - Google Patents

Optoelektronischer Halbleiterchip Download PDF

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Publication number
DE102009015569B9
DE102009015569B9 DE102009015569.4A DE102009015569A DE102009015569B9 DE 102009015569 B9 DE102009015569 B9 DE 102009015569B9 DE 102009015569 A DE102009015569 A DE 102009015569A DE 102009015569 B9 DE102009015569 B9 DE 102009015569B9
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DE
Germany
Prior art keywords
quantum well
semiconductor chip
zones
active quantum
indium content
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DE102009015569.4A
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German (de)
English (en)
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DE102009015569A1 (de
DE102009015569B4 (de
Inventor
Adrian Stefan Avramescu
Désirée Queren
Dr. Eichler Christoph
Dr. Sabathil Matthias
Dr. Lutgen Stephan
Dr. Strauß Uwe
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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Publication date
Priority to DE102009015569.4A priority Critical patent/DE102009015569B9/de
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Priority to KR1020117025789A priority patent/KR101645057B1/ko
Priority to CN201410437730.8A priority patent/CN104319331B/zh
Priority to US13/262,583 priority patent/US8908733B2/en
Priority to EP10707304.1A priority patent/EP2415085B1/de
Priority to PCT/EP2010/053047 priority patent/WO2010112310A1/de
Priority to KR1020167017756A priority patent/KR101704985B1/ko
Priority to CN201080014639.5A priority patent/CN102369606B/zh
Priority to JP2012502545A priority patent/JP2012522390A/ja
Priority to TW099108846A priority patent/TWI452723B/zh
Publication of DE102009015569A1 publication Critical patent/DE102009015569A1/de
Priority to US14/535,044 priority patent/US9202971B2/en
Priority to JP2015025476A priority patent/JP5933775B2/ja
Priority to JP2016092753A priority patent/JP2016157977A/ja
Application granted granted Critical
Publication of DE102009015569B4 publication Critical patent/DE102009015569B4/de
Publication of DE102009015569B9 publication Critical patent/DE102009015569B9/de
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3407—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers characterised by special barrier layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3408—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers characterised by specially shaped wells, e.g. triangular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3425—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers comprising couples wells or superlattices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/222—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN heterojunction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/173—The laser chip comprising special buffer layers, e.g. dislocation prevention or reduction
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/949—Radiation emitter using nanostructure
    • Y10S977/95—Electromagnetic energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/949—Radiation emitter using nanostructure
    • Y10S977/95—Electromagnetic energy
    • Y10S977/951—Laser

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
DE102009015569.4A 2009-03-30 2009-03-30 Optoelektronischer Halbleiterchip Active DE102009015569B9 (de)

Priority Applications (13)

Application Number Priority Date Filing Date Title
DE102009015569.4A DE102009015569B9 (de) 2009-03-30 2009-03-30 Optoelektronischer Halbleiterchip
CN201410437730.8A CN104319331B (zh) 2009-03-30 2010-03-10 光电子半导体芯片
US13/262,583 US8908733B2 (en) 2009-03-30 2010-03-10 Optoelectronic semiconductor chip
EP10707304.1A EP2415085B1 (de) 2009-03-30 2010-03-10 Optoelektronischer halbleiterchip
PCT/EP2010/053047 WO2010112310A1 (de) 2009-03-30 2010-03-10 Optoelektronischer halbleiterchip
KR1020167017756A KR101704985B1 (ko) 2009-03-30 2010-03-10 광전 반도체칩
CN201080014639.5A CN102369606B (zh) 2009-03-30 2010-03-10 光电子半导体芯片
JP2012502545A JP2012522390A (ja) 2009-03-30 2010-03-10 オプトエレクトロニクス半導体チップ
KR1020117025789A KR101645057B1 (ko) 2009-03-30 2010-03-10 광전 반도체칩
TW099108846A TWI452723B (zh) 2009-03-30 2010-03-25 光電半導體晶片
US14/535,044 US9202971B2 (en) 2009-03-30 2014-11-06 Optoelectronic semiconductor chip
JP2015025476A JP5933775B2 (ja) 2009-03-30 2015-02-12 オプトエレクトロニクス半導体チップ
JP2016092753A JP2016157977A (ja) 2009-03-30 2016-05-02 オプトエレクトロニクス半導体チップ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102009015569.4A DE102009015569B9 (de) 2009-03-30 2009-03-30 Optoelektronischer Halbleiterchip

Publications (3)

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DE102009015569A1 DE102009015569A1 (de) 2010-10-07
DE102009015569B4 DE102009015569B4 (de) 2023-03-23
DE102009015569B9 true DE102009015569B9 (de) 2023-06-29

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DE102009015569.4A Active DE102009015569B9 (de) 2009-03-30 2009-03-30 Optoelektronischer Halbleiterchip

Country Status (8)

Country Link
US (2) US8908733B2 (https=)
EP (1) EP2415085B1 (https=)
JP (3) JP2012522390A (https=)
KR (2) KR101704985B1 (https=)
CN (2) CN102369606B (https=)
DE (1) DE102009015569B9 (https=)
TW (1) TWI452723B (https=)
WO (1) WO2010112310A1 (https=)

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DE102009015569B9 (de) * 2009-03-30 2023-06-29 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip
KR101712049B1 (ko) * 2010-11-17 2017-03-03 엘지이노텍 주식회사 발광 소자
JP5417307B2 (ja) * 2010-12-02 2014-02-12 株式会社東芝 半導体発光素子
JP2014067893A (ja) * 2012-09-26 2014-04-17 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物半導体発光素子
DE102013200507A1 (de) * 2013-01-15 2014-07-17 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement
DE102013104351B4 (de) 2013-04-29 2022-01-20 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterschichtenfolge und Verfahren zum Betreiben eines optoelektronischen Halbleiterchips
JP2015038949A (ja) * 2013-07-17 2015-02-26 株式会社東芝 半導体発光素子及びその製造方法
KR102019858B1 (ko) * 2013-07-18 2019-09-09 엘지이노텍 주식회사 발광소자 및 조명시스템
FR3009894B1 (fr) 2013-08-22 2016-12-30 Commissariat Energie Atomique Diode electroluminescente dont une zone active comporte des couches d'inn
JP6183060B2 (ja) * 2013-08-24 2017-08-23 日亜化学工業株式会社 半導体発光素子
WO2017119365A1 (ja) * 2016-01-08 2017-07-13 ソニー株式会社 半導体発光素子、表示装置および電子機器
DE102016117477B4 (de) * 2016-09-16 2026-03-26 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterschichtenfolge und optoelektronischer Halbleiterchip
JP7295371B2 (ja) * 2018-08-31 2023-06-21 日亜化学工業株式会社 半導体レーザ素子
JP6891865B2 (ja) * 2018-10-25 2021-06-18 日亜化学工業株式会社 発光素子
US10735354B1 (en) 2018-10-30 2020-08-04 Facebook, Inc. Photo space user interface facilitating contextual discussion between users of a social networking system
FR3096508A1 (fr) * 2019-05-21 2020-11-27 Aledia Dispositif optoélectronique à diodes électroluminescentes
US20240395966A1 (en) * 2023-05-24 2024-11-28 Wisconsin Alumni Research Foundation Light-emitters with group iii-nitride-based quantum well active regions having gan interlayers

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EP1667292A1 (en) 2003-08-26 2006-06-07 Sony Corporation GaN III-V COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME
US20050224781A1 (en) 2003-12-17 2005-10-13 Palo Alto Research Center, Incorporated Ultraviolet group III-nitride-based quantum well laser diodes
WO2007023419A1 (en) 2005-08-24 2007-03-01 Koninklijke Philips Electronics N.V. Iii-nitride light-emitting device with double heterostructure light-emitting region

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Publication number Publication date
TW201044635A (en) 2010-12-16
DE102009015569A1 (de) 2010-10-07
CN104319331A (zh) 2015-01-28
CN104319331B (zh) 2017-05-10
JP2012522390A (ja) 2012-09-20
KR20160085909A (ko) 2016-07-18
TWI452723B (zh) 2014-09-11
CN102369606B (zh) 2014-10-01
KR20120009475A (ko) 2012-01-31
US8908733B2 (en) 2014-12-09
EP2415085A1 (de) 2012-02-08
JP2016157977A (ja) 2016-09-01
EP2415085B1 (de) 2019-01-02
JP5933775B2 (ja) 2016-06-15
US20130028281A1 (en) 2013-01-31
JP2015092636A (ja) 2015-05-14
DE102009015569B4 (de) 2023-03-23
CN102369606A (zh) 2012-03-07
KR101704985B1 (ko) 2017-02-08
US20150063395A1 (en) 2015-03-05
US9202971B2 (en) 2015-12-01
KR101645057B1 (ko) 2016-08-02
WO2010112310A1 (de) 2010-10-07

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