KR101699060B1 - 기판과 패턴형성된 층 간의 접착을 용이하게 하는 방법 - Google Patents

기판과 패턴형성된 층 간의 접착을 용이하게 하는 방법 Download PDF

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Publication number
KR101699060B1
KR101699060B1 KR1020117012205A KR20117012205A KR101699060B1 KR 101699060 B1 KR101699060 B1 KR 101699060B1 KR 1020117012205 A KR1020117012205 A KR 1020117012205A KR 20117012205 A KR20117012205 A KR 20117012205A KR 101699060 B1 KR101699060 B1 KR 101699060B1
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Prior art keywords
substrate
delete delete
process chamber
layer
imprint
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KR20110089857A (ko
Inventor
에드워드 비. 플레처
정마오 이
프랭크 와이. 수
드웨인 엘. 래브레이크
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캐논 나노테크놀로지즈 인코퍼레이티드
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H10P70/20—
    • H10P72/04—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31652—Of asbestos
    • Y10T428/31663—As siloxane, silicone or silane

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Laminated Bodies (AREA)
  • Cleaning Implements For Floors, Carpets, Furniture, Walls, And The Like (AREA)
KR1020117012205A 2008-10-30 2009-10-29 기판과 패턴형성된 층 간의 접착을 용이하게 하는 방법 Active KR101699060B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US10952808P 2008-10-30 2008-10-30
US61/109,528 2008-10-30
US12/606,588 US8361546B2 (en) 2008-10-30 2009-10-27 Facilitating adhesion between substrate and patterned layer
US12/606,588 2009-10-27
PCT/US2009/005870 WO2010051024A1 (en) 2008-10-30 2009-10-29 Facilitating adhesion between substrate and patterned layer

Publications (2)

Publication Number Publication Date
KR20110089857A KR20110089857A (ko) 2011-08-09
KR101699060B1 true KR101699060B1 (ko) 2017-01-23

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KR1020117012205A Active KR101699060B1 (ko) 2008-10-30 2009-10-29 기판과 패턴형성된 층 간의 접착을 용이하게 하는 방법

Country Status (5)

Country Link
US (1) US8361546B2 (enExample)
JP (1) JP5404803B2 (enExample)
KR (1) KR101699060B1 (enExample)
MY (1) MY149262A (enExample)
WO (1) WO2010051024A1 (enExample)

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US8846195B2 (en) * 2005-07-22 2014-09-30 Canon Nanotechnologies, Inc. Ultra-thin polymeric adhesion layer
US8808808B2 (en) * 2005-07-22 2014-08-19 Molecular Imprints, Inc. Method for imprint lithography utilizing an adhesion primer layer
US8361546B2 (en) 2008-10-30 2013-01-29 Molecular Imprints, Inc. Facilitating adhesion between substrate and patterned layer
WO2011066450A2 (en) 2009-11-24 2011-06-03 Molecular Imprints, Inc. Adhesion layers in nanoimprint lithography
KR20130105648A (ko) * 2010-09-08 2013-09-25 몰레큘러 임프린츠 인코퍼레이티드 임프린트 리소그래피에 사용하는 증기 전달 시스템
TWI471693B (zh) * 2011-11-10 2015-02-01 Canon Kk 光可固化組成物，及使用彼之圖案化方法
US20170066208A1 (en) 2015-09-08 2017-03-09 Canon Kabushiki Kaisha Substrate pretreatment for reducing fill time in nanoimprint lithography
US10488753B2 (en) 2015-09-08 2019-11-26 Canon Kabushiki Kaisha Substrate pretreatment and etch uniformity in nanoimprint lithography
US10134588B2 (en) 2016-03-31 2018-11-20 Canon Kabushiki Kaisha Imprint resist and substrate pretreatment for reducing fill time in nanoimprint lithography
US10754244B2 (en) 2016-03-31 2020-08-25 Canon Kabushiki Kaisha Pattern forming method as well as production methods for processed substrate, optical component, circuit board, electronic component and imprint mold
US10620539B2 (en) 2016-03-31 2020-04-14 Canon Kabushiki Kaisha Curing substrate pretreatment compositions in nanoimprint lithography
US10095106B2 (en) 2016-03-31 2018-10-09 Canon Kabushiki Kaisha Removing substrate pretreatment compositions in nanoimprint lithography
US10509313B2 (en) 2016-06-28 2019-12-17 Canon Kabushiki Kaisha Imprint resist with fluorinated photoinitiator and substrate pretreatment for reducing fill time in nanoimprint lithography
US10317793B2 (en) 2017-03-03 2019-06-11 Canon Kabushiki Kaisha Substrate pretreatment compositions for nanoimprint lithography
US11448958B2 (en) * 2017-09-21 2022-09-20 Canon Kabushiki Kaisha System and method for controlling the placement of fluid resist droplets
US12300487B2 (en) * 2018-09-27 2025-05-13 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist composition and method of forming photoresist pattern
EP3650224B1 (de) 2018-11-09 2023-06-21 Phoenix Contact GmbH & Co. KG Vorrichtung und verfahren zum bedrucken eines artikels
US11845241B2 (en) 2021-03-18 2023-12-19 Canon Kabushiki Kaisha Laminate containing an adhesion promoter layer and method of making the laminate
US12242205B2 (en) 2021-11-30 2025-03-04 Canon Kabushiki Kaisha Reaction chamber with stop-gapped vacuum seal
US12325046B2 (en) * 2022-06-28 2025-06-10 Canon Kabushiki Kaisha Superstrate including a body and layers and methods of forming and using the same

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Also Published As

Publication number Publication date
JP5404803B2 (ja) 2014-02-05
JP2012507391A (ja) 2012-03-29
US20100112236A1 (en) 2010-05-06
KR20110089857A (ko) 2011-08-09
MY149262A (en) 2013-08-15
US8361546B2 (en) 2013-01-29
WO2010051024A1 (en) 2010-05-06

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