KR101698532B1 - 메모리 소자 - Google Patents

메모리 소자 Download PDF

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Publication number
KR101698532B1
KR101698532B1 KR1020150045174A KR20150045174A KR101698532B1 KR 101698532 B1 KR101698532 B1 KR 101698532B1 KR 1020150045174 A KR1020150045174 A KR 1020150045174A KR 20150045174 A KR20150045174 A KR 20150045174A KR 101698532 B1 KR101698532 B1 KR 101698532B1
Authority
KR
South Korea
Prior art keywords
layer
magnetic
magnetization
free
tunnel junction
Prior art date
Application number
KR1020150045174A
Other languages
English (en)
Korean (ko)
Other versions
KR20160112890A (ko
Inventor
박재근
이두영
Original Assignee
한양대학교 산학협력단
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 한양대학교 산학협력단 filed Critical 한양대학교 산학협력단
Priority to PCT/KR2016/001137 priority Critical patent/WO2016148395A1/ko
Priority to CN201680016463.4A priority patent/CN107710433B/zh
Publication of KR20160112890A publication Critical patent/KR20160112890A/ko
Application granted granted Critical
Publication of KR101698532B1 publication Critical patent/KR101698532B1/ko
Priority to US15/707,491 priority patent/US10580964B2/en

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H01L43/02—
    • H01L43/08—
    • H01L43/10—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Magnetic active materials

Landscapes

  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
KR1020150045174A 2015-03-18 2015-03-31 메모리 소자 KR101698532B1 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
PCT/KR2016/001137 WO2016148395A1 (ko) 2015-03-18 2016-02-02 메모리 소자
CN201680016463.4A CN107710433B (zh) 2015-03-18 2016-02-02 存储器件
US15/707,491 US10580964B2 (en) 2015-03-18 2017-09-18 Memory device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020150037234 2015-03-18
KR20150037234 2015-03-18

Publications (2)

Publication Number Publication Date
KR20160112890A KR20160112890A (ko) 2016-09-28
KR101698532B1 true KR101698532B1 (ko) 2017-01-20

Family

ID=57101932

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020150045174A KR101698532B1 (ko) 2015-03-18 2015-03-31 메모리 소자

Country Status (2)

Country Link
KR (1) KR101698532B1 (zh)
CN (1) CN107710433B (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101897916B1 (ko) 2017-06-20 2018-10-31 고려대학교 산학협력단 이지-콘 상태의 자성층을 구비한 자기터널 접합 소자
CN112635655A (zh) * 2019-10-08 2021-04-09 上海磁宇信息科技有限公司 一种磁性隧道结覆盖层及其制作工艺

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012089858A (ja) 2011-11-28 2012-05-10 Toshiba Corp 磁気抵抗効果素子、磁気メモリ、磁気抵抗効果ヘッド、および磁気記録再生装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8120126B2 (en) * 2009-03-02 2012-02-21 Qualcomm Incorporated Magnetic tunnel junction device and fabrication
KR101195041B1 (ko) * 2011-05-12 2012-10-31 고려대학교 산학협력단 자기 공명 세차 현상을 이용한 스핀전달토크 자기 메모리 소자
CN102709467A (zh) * 2012-06-04 2012-10-03 清华大学 一种高灵敏度的CoFeB基磁隧道结
KR101446338B1 (ko) * 2012-07-17 2014-10-01 삼성전자주식회사 자기 소자 및 그 제조 방법
KR20140025165A (ko) * 2012-08-21 2014-03-04 삼성전자주식회사 자기 메모리 소자의 제조 방법
KR102153559B1 (ko) * 2013-08-02 2020-09-08 삼성전자주식회사 수직 자기터널접합을 구비하는 자기 기억 소자

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012089858A (ja) 2011-11-28 2012-05-10 Toshiba Corp 磁気抵抗効果素子、磁気メモリ、磁気抵抗効果ヘッド、および磁気記録再生装置

Also Published As

Publication number Publication date
CN107710433A (zh) 2018-02-16
KR20160112890A (ko) 2016-09-28
CN107710433B (zh) 2020-08-04

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