KR101692007B1 - Method for fabricating Organic Light Emitting Diode - Google Patents

Abstract

The present invention relates to a method of manufacturing an organic electroluminescent device, in which a defective portion in which an organic substance is not present on a first electrode is detected through a pattern inspecting device before a second electrode is formed, The repair electrode is formed to repair the defective portion, and then the second electrode is formed to prevent a short circuit between the first electrode and the second electrode.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a method for manufacturing an organic electroluminescent device,

The present invention relates to a method of manufacturing an organic electroluminescent device for preventing a short circuit of a wiring by forming a repair insulating film of an insulating material on a defective portion.

Of the flat panel display devices, the organic electroluminescent device is suitable for use as a moving image display medium because of its high response speed, low power consumption, self-emission characteristics, and low temperature fabrication. In the organic electroluminescent device, when an organic light emitting layer is interposed between an anode and a cathode which are opposed to each other and a current is applied to the anode and the cathode, holes and electrons are injected respectively into the anode and the cathode, To form an exciton. The image is realized by using the phenomenon that the excitons emit light while transiting from the excited state to the ground state.

In the organic electroluminescent device, pixels are formed in a matrix form while scanning lines and signal lines intersect, and passive matrix type and active matrix type are classified according to a driving method. The passive matrix type drives the pixels by sequentially applying signals to the scan lines, while the active matrix type drives the pixels according to the switching operation of the thin film transistors.

Hereinafter, an active matrix type organic electroluminescent device according to the related art will be described with reference to the drawings.

1 is a circuit diagram of a unit pixel of an organic electroluminescent device according to the related art.

FIG. 1 is a circuit diagram of a unit pixel P of a matrix type organic electroluminescent device. The unit pixel P includes a switching thin film transistor STr, a driving thin film transistor DTr, a storage capacitor StgC), and an organic electroluminescent diode (E).

The unit pixel P is defined by the intersection of the gate line GL arranged in the first direction and the data line DL arranged in the second direction perpendicular to the first direction and is connected to the organic light emitting diode E The power supply line PL for applying the power supply voltage is arranged in parallel to the data line DL.

A switching thin film transistor STr is formed in an intersecting region of the data line DL and the gate line GL and the switching thin film transistor STr and the driving thin film transistor DTr are electrically connected. The first electrode of the organic electroluminescent diode E is connected to the drain electrode of the driving thin film transistor DTr, and the second electrode of the organic electroluminescent diode E is grounded. The power supply line PL supplies the power supply voltage to the organic light emitting diode E through the driving thin film transistor DTr. A storage capacitor StgC is formed between the gate electrode and the source electrode of the driving thin film transistor DTr. When a signal is applied through the gate line GL, the switching thin film transistor STr is turned on and the signal of the data line DL is transmitted to the gate electrode of the driving thin film transistor DTr, And light is output through the organic electroluminescent diode E.

When the driving thin film transistor DTr is turned on, the level of the electric current flowing from the power supply line PL to the organic light emitting diode E is determined. As a result, the organic light emitting diode E has a gray- scale can be implemented. The storage capacitor StgC maintains a constant gate voltage of the driving thin film transistor DTr when the switching thin film transistor STr is turned off and the switching thin film transistor STr is turned off The level of current flowing through the organic electroluminescent diode E can be kept constant until the next frame.

2 is a cross-sectional view of a unit pixel of an organic electroluminescent device according to the prior art.

The organic electroluminescent device of the active matrix type is classified into the upper and lower emission types according to the light emitting position of the light emitting diode. Typically, the top emission type organic electroluminescent device will be described. In FIG. 2, the pixel region P is divided into a driving transistor region DA and a storage region StgA.

A semiconductor layer pattern (not shown) including first and second semiconductor layer patterns (not shown) is formed on a first substrate 12 used as a lower substrate, and then a first substrate 12 including a semiconductor layer pattern A gate insulating layer 16 is formed on the first semiconductor layer pattern 12 and a first storage electrode 18a is formed by doping the second semiconductor layer pattern with an N type or P type impurity.

The gate electrode 20 and the second storage electrode 18b are formed on the gate insulating layer 16 corresponding to the central region of the driving transistor region DA and the storage region StgA. Source and drain regions 22a and 22b doped with an impurity in the first semiconductor layer pattern by doping with impurities and impurities are doped into the first semiconductor layer pattern on both sides of the gate electrode 20, Forming an undoped channel region 22c.

An interlayer insulating layer 24 is formed on the gate insulating layer 16 including the gate electrode 20 and the second storage electrode 18b and the interlayer insulating layer 24 is selectively etched to form the source and drain regions 22a, The first and second contact holes 26a and 26b are formed to expose the first and second contact holes 22a and 22b. Source and drain electrodes 28a and 28b connected to the source and drain regions 22a and 22b through the respective first and second contact holes 26a and 26b and interlayer insulating A third storage electrode 30 is formed on the layer 24.

A protective layer 32 is formed on the interlayer insulating layer 24 including the source and drain electrodes 28a and 28b and the third storage electrode 30 and the protective layer 32 corresponding to the drain electrode 28b is formed The drain contact hole 34 is formed by etching to form a first electrode 36 connected to the drain electrode 28b through the drain contact hole 34 and used as an anode. The bank layer 38 including the opening 46 exposing the first electrode 36 is formed on the protective layer 32 including the first electrode 36 and the first electrode 36 corresponding to the opening 46 is formed. The organic emission layer 40 is formed. The organic light emitting layer 40 includes a hole injecting layer 40a, a light emitting material layer 40b, and an electron transporting layer 40c. The organic light emitting layer 40 may further include a hole transport layer 40d between the hole injection layer 40a and the light emitting material layer 40b.

A second electrode 42 used as a cathode is formed on the bank layer 38 including the organic light emitting layer 40. A seal pattern (not shown) is formed along the periphery of the first substrate 12 or the second substrate 50 and the first and second substrates 12 and 50 are bonded together in an inert gas or vacuum atmosphere, Type organic electroluminescent device 10 is completed.

When the organic light emitting layer 40 is formed on the first electrode 36 and the foreign substance 44 is present on the first electrode 36, the organic material is not stacked around the foreign substance 42 Space 46 is generated. When the second electrode 42 is formed on the organic light emitting layer 40 in a state where the foreign material 44 and the space 46 are formed, the metal material constituting the second electrode 42 is formed in the space 46 So that the second electrode 42 is electrically connected to the first electrode 36 in a short-circuited state. Therefore, a short circuit of the first and second electrodes 36 and 42 may cause a failure that the unit pixel does not operate normally.

In order to solve the above-described problems, the present invention provides a method of manufacturing a semiconductor device, comprising: forming a repair insulating film on a substrate having an organic light emitting layer formed thereon by using a foreign material on the first electrode, And then forming a second electrode on the organic light emitting layer to prevent a short circuit between the first electrode and the second electrode.

According to an aspect of the present invention, there is provided a method of manufacturing a semiconductor device, including: forming a first electrode on a substrate; Forming an organic light emitting layer on the first electrode; Detecting a defective portion in the substrate on which the organic light emitting layer is formed; Forming a repair insulating film on the defective portion by supplying an insulating material; And forming a second electrode on the organic light emitting layer.

Wherein the organic light emitting layer includes a hole injection layer, a light emitting material layer, and an electron transporting layer, and after forming each of the hole injection layer, the light emitting material layer, and the electron transporting layer, The present invention also provides a method of manufacturing an organic electroluminescent device.

The organic light emitting layer is formed using one of an ink jet printer, a nozzle printer, a roll printer, and an offset printer, .

And comparing the reference pattern image with the scan pattern image of the substrate through a pattern tester to detect the defective portion.

Wherein the defective portion is a space in which the organic light emitting layer is not formed in the periphery of the foreign substance on the first electrode and the foreign substance, and the step of forming the repair insulating film on the defective portion surrounds the foreign substance with the insulating material, The present invention also provides a method of manufacturing an organic electroluminescent device that is filled with an insulating material.

The insulating material may be a time-series or acryl-based resin, or an inorganic oxidizing material dissolved in an organic solvent.

Wherein the insulating material has a viscosity of 2 to 1,000 cP (centi-poise).

The repair insulating layer may be formed by using an ink jet printer or a dispensing apparatus.

The organic electroluminescent device according to the present invention is characterized in that the organic electroluminescent layer is formed on the first electrode and then the substrate on which the organic electroluminescent layer is formed is compared with the scan pattern image of the first substrate and the reference pattern image through the pattern inspecting device, A repair insulating film is formed by inserting a foreign material in which a light emitting layer is not formed and a defect portion including a space around a foreign object, and a foreign material is wrapped with an insulating material through a repair device and a space around the foreign material is filled with an insulating material. The short circuit between the first electrode and the second electrode can be prevented.

1 is a circuit diagram of a unit pixel of an organic electroluminescent device according to the prior art;
2 is a cross-sectional view of a unit pixel of an organic electroluminescent device according to the related art
3A to 3F are cross-sectional views of a unit pixel of an organic electroluminescent device according to an embodiment of the present invention,
FIGS. 4A and 4B are schematic views illustrating a process of inspecting a defective portion of an organic electroluminescent device according to the present invention and repairing a defective portion
5 is a schematic diagram of a pattern tester for inspecting defective portions according to an embodiment of the present invention.
6 is a schematic diagram of a repair apparatus for repairing a defective portion according to an embodiment of the present invention.
7 is a flow chart for detecting defects in an organic electroluminescent device according to an embodiment of the present invention and repairing the defects.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings. In the present invention, an active matrix type top emission organic electroluminescent device will be described as an example.

3A to 3F are cross-sectional views illustrating steps of a unit pixel of an organic electroluminescent device according to an exemplary embodiment of the present invention.

3A to 3F, the pixel region P is divided into a driving transistor region DA and a storage region StgA.

3A, a polysilicon layer (not shown) is formed on a first substrate 112 used as a lower substrate, and a polysilicon layer is patterned to form first and second semiconductor layer patterns 114a and 114b A first gate insulating layer 116 is formed on the first substrate 112 including the semiconductor layer pattern 114. The first gate insulating layer 116 is formed on the first substrate 112 including the semiconductor layer pattern 114. [ The semiconductor layer pattern 114 may be divided into first and second semiconductor layer patterns 114a and 114b or may be integrally formed as shown in FIG. 3A.

The polysilicon layer is formed by forming an amorphous silicon layer (not shown) on the first substrate 112 and irradiating the amorphous silicon layer with a laser beam or annealing the amorphous silicon layer to crystallize the amorphous silicon layer. The first gate insulating layer 116 uses silicon oxide (SiO2) or silicon nitride (SiNx), which is an inorganic insulating material.

The method of forming the semiconductor layer pattern 114 includes a step of applying a first photosensitive layer (not shown) on the polysilicon layer, a step of exposing and developing the first photosensitive layer using a first mask Forming a first photosensitive layer pattern (not shown), and patterning the polysilicon layer with the first photosensitive layer pattern as an etching mask.

As shown in FIG. 3B, the second semiconductor layer pattern 114b of FIG. 3A corresponding to the storage region StgA is doped with an N-type or P-type impurity to form the first storage electrode 118a.

The method of forming the first storage electrode 118a may include a step of applying a second photosensitive layer (not shown) on the gate insulating layer 116, a step of forming a second photosensitive layer using a second mask Forming a second photosensitive layer pattern (not shown) exposing the gate insulating layer 116 corresponding to the storage region StgA by exposure and development and forming a second photosensitive layer pattern Type dopant.

The first storage electrode 118a is formed and then the gate electrode 120 and the second storage electrode StgA are formed on the gate insulating layer 116 corresponding to the central region of the driving transistor region DA and the storage region StgA, 118b. The gate electrode 120 and the second storage electrode 118b use one of aluminum (Al), aluminum alloy (AlNd), copper (Cu), and copper alloy, which are low resistance metal materials.

The method for forming the gate electrode 120 and the second storage electrode 118b may include forming a gate electrode 120 and a second storage electrode 118b on the first gate insulating layer 116a by depositing aluminum, AlNd, (Not shown) by depositing one of the copper alloys, applying a third photosensitive layer (not shown) on the first metallic material layer, depositing a third mask layer Forming a third photosensitive layer pattern (not shown) by exposure and development of the third photosensitive layer using the third photosensitive layer pattern, and patterning the third metal layer using the third photosensitive layer pattern do.

After the gate electrode 120 is formed, the first semiconductor layer pattern 114a is doped with an N-type or P-type impurity using the gate electrode 120 as a doping mask to form source and drain regions 122a, 122b and an undoped channel region 122c.

3C, an interlayer insulating layer 124 is formed on the gate insulating layer 116 including the gate electrode 120 and the second storage electrode 118b, and the interlayer insulating layer 124 is selectively etched to form a source And first and second contact holes 126a and 126b exposing the drain regions 122a and 122b are formed. The interlayer insulating layer 124 may be formed by depositing silicon nitride (SiNx) or silicon oxide (SiO2) which is an inorganic insulating material or by using benzocyclobutene (BCB) or photo acryl, which is an organic insulating material, As shown in FIG.

The method of forming the first and second contact holes 126a and 126b includes the steps of applying a fourth photosensitive layer (not shown) on the interlayer insulating layer 124, using a fourth mask Forming a fourth photosensitive layer pattern (not shown) by exposure and development of the fourth photosensitive layer, and patterning the interlayer insulating layer 124 using the fourth photosensitive layer pattern.

After the first and second contact holes 126a and 126b are formed, source and drain electrodes 128a and 128b connected to the source and drain regions 122a and 122b through the first and second contact holes 126a and 126b, respectively, And the third storage electrode 130 is formed on the interlayer insulating layer 124 corresponding to the second storage electrode 118b. The third storage electrode 130 may be connected to the power supply line (not shown) and the first storage electrode 118a. The source and drain electrodes 128a and 128b and the third storage electrode 30 are made of one of aluminum (Al), aluminum alloy (AlNd), copper (Cu), and copper alloy.

The method of forming the source and drain electrodes 128a and 128b and the third storage electrode 130 is a method of forming the source and drain electrodes 128a and 128b on the interlayer insulating layer 124 including the first and second contact holes 126a and 126b, Forming a third metallic material layer (not shown) using one of aluminum (Al), aluminum alloy (AlNd), copper (Cu), and copper alloy, forming a fifth photosensitive layer A step of forming a fifth photosensitive layer pattern (not shown) by exposure and development of a fifth photosensitive layer using a fifth mask (not shown), and a step of forming a fifth photosensitive layer pattern And patterning the third metal material layer using the second metal material layer. A data line (not shown) is formed together with the source and drain electrodes 128a and 128b by patterning the third metal material layer.

3A to 3C, a switching transistor including a source electrode and a drain electrode 128a and 128b, a gate insulating layer 116 and a gate electrode 120, and a first to third storage electrodes 118a and 118b , 130, a gate insulating layer 116, and an interlayer insulating layer 124 are formed. Although not shown in the drawing, the driving transistor is also formed in the same configuration as the switching transistor.

A protective layer 132 is formed on the interlayer insulating layer 124 including the source and drain electrodes 128a and 128b and the third storage electrode 130 and the protective layer 132 The layer 132 is etched to form the drain contact hole 134 and then the first electrode 136 connected to the drain electrode 128b through the drain contact hole 134 and used as the anode is formed.

The passivation layer 132 may be formed by depositing silicon oxide (SiO2) or silicon nitride (SiNx), which is an inorganic insulating material, or photo acryl or benzocyclobutene (BCB), which is an organic insulating material. The first electrode 136 may be formed by depositing indium-tin-oxide (ITO) or indium-zinc-oxide (IZO), which is a transparent conductive material having a relatively high work function value, ), An aluminum alloy, silver (Ag), magnesium (Mg), and gold (Au).

The method of forming the drain contact hole 134 includes the steps of forming a protective layer 132 on the interlayer insulating layer 124 including the source and drain electrodes 128a and 128b and the third storage electrode 130, A sixth photosensitive layer pattern (not shown) is formed by exposing and developing the sixth photosensitive layer using a sixth mask (not shown), applying a sixth photosensitive layer (not shown) And etching the passivation layer 132 corresponding to the drain electrode 128b using the sixth photosensitive layer pattern.

A method of forming the first electrode 136 electrically connected to the drain electrode 128b includes forming a first electrode 136 on the passivation layer 132 including the drain contact hole 134 by depositing an indium- (Al), an aluminum alloy, silver (Ag), magnesium (Mg), gold (Au), or the like, which is a metal material having a relatively low work function, Forming a fourth metal material layer (not shown) using one of the first metal material layer (not shown), applying a seventh photosensitive layer (not shown) on the fourth metal material layer, Forming a seventh photosensitive layer pattern (not shown) by exposure and development of the seventh photosensitive layer used; and patterning the fourth metallic material layer using the seventh photosensitive layer pattern.

A bank layer 138 including an opening 139 exposing the first electrode 136 is formed on the protective layer 132 including the first electrode 136 after the first electrode 136 is formed, An organic light emitting layer 140 is formed on the first electrode 136 corresponding to the opening 139. The bank layer 138 uses an organic insulating material such as photo acryl or benzocyclobutene (BCB). The organic light emitting layer 140 includes a hole injecting layer 140a, a light emitting material layer 140b, and an electron transporting layer 140c. If necessary, the organic light emitting layer 140 may further include a hole transport layer 140d between the hole injection layer 140a and the light emitting material layer 140b.

The method of forming the bank layer 138 may be performed by depositing an organic insulating material such as photo acryl or benzocyclobutene (BCB) on the protective layer 132 including the first electrode 136 And an exposure and development step of an organic insulating material using an eighth mask (not shown).

The organic light emitting layer 140 may be formed by a method of printing a liquid organic material such as an ink jet printer, a nozzle printer, a roll printer, a spray coating, (Slot Coating), and Offset Printer (Offset Printer).

Referring to FIG. 3E, a second electrode 142 used as a cathode is formed on the isolation portion 138 including the organic light emitting layer 140. The second electrode 142 may be formed by depositing indium-tin-oxide (ITO) or indium-zinc-oxide (IZO), which is a transparent conductive material having a relatively high work function value, ), An aluminum alloy, silver (Ag), magnesium (Mg), and gold (Au). When the first electrode 136 is made of a metal material having a small work function value, the second electrode 142 uses a transparent conductive material having a large work function value, and the first electrode 136 has a material having a large work function value. The second electrode 142 is formed of a metal material having a relatively low work function value. An organic electroluminescent diode E composed of the first electrode 136, the organic light emitting layer 140, and the second electrode 142 is formed through FIG. 3D and FIG. 3E.

A seal pattern (not shown) is formed along the periphery of the first substrate 112 or the second substrate 150 and the first and second substrates 112 and 150 are formed in an inert gas or a vacuum atmosphere, Thereby completing the organic light emitting device 110 of the top emission type.

When the organic material layer 140 and the second electrode 142 are formed as shown in FIG. 3D and FIG. 3E during the manufacturing process of the organic EL device 110, if foreign substances are present on the first electrode 136, A space is formed in which the organic material is not stacked on the first electrode 136 due to the foreign substance and a space in which the organic material is not stacked is filled with the metal material constituting the second electrode 142, And the second electrode 142 may be short-circuited. In the present invention, a method of forming an organic light emitting layer 140 and inspecting defects to repair a defect to prevent shorting of the first electrode 136 and the second electrode 142 is proposed.

FIGS. 4A and 4B are schematic views illustrating a process of inspecting a defective portion of an organic electroluminescent device according to the present invention and repairing a defective portion. FIG.

4A, when the foreign material 144 is present on the first electrode 136, when the organic light emitting layer 140 is formed on the first electrode 136, A space 146 that is not stacked is generated. When a second electrode (not shown) is formed on the organic light emitting layer 140 in which the space 146 is formed, the metal material constituting the second electrode is filled in the space 146, The first electrode 136 may be short-circuited to electrically connect the first electrode 136.

In order to prevent the short circuit between the first electrode 136 and the second electrode, an organic light emitting layer 140 is formed and then a first substrate 112 (see FIG. 1) having an organic light emitting layer 140 formed thereon through a pattern inspecting device And a liquid insulating material 162 is ejected through the nozzle 174 of the repair device (not shown) to the defective part 148 to remove the foreign matter 144, The repair insulating film 166 is formed to completely fill the space 146 around the foreign substance 144 while completely covering the exposed portion of the foreign substance 144. [

The insulating material 162 uses a thermosetting resin that can be used at 150 degrees or less so as not to damage the organic light emitting layer 140 when the repair insulating film 166 is formed. As the insulating material 162, an epoxy-based or acrylic-based resin may be used, or an inorganic oxide material dissolved in an organic solvent may be used to facilitate discharge. An auxiliary agent for viscosity control may be added to the insulating material 162 to adjust the viscosity. The viscosity for the proper discharge of the insulating material 162 is 2 to 1,000 cP (centi-poise).

The repair device 170 may be an ink jet printer or a disposer so that the insulation material 162 to be discharged is not cured at room temperature. In the case of an ink jet printer, ), And in the case of the dispensing apparatus, the periphery of the nozzle can be heated.

4A, a process of inspecting a pattern to detect a defective portion and repairing a defect after forming the organic light emitting layer 140 has been described. However, since the organic light emitting layer 140 includes the hole injection layer 140a, the hole transport layer The hole transporting layer 140d, the light emitting material layer 140b, and the electron transporting layer 140c, 140c, 140d, the light emitting material layer 140b, and the electron transporting layer 140c, ), It is possible to repeat the individual pattern inspection and defect repair process.

4B, when the insulating material 164 completely covers the foreign matter 144 and the second electrode 1425 is formed in a state that the space 146 around the foreign matter 144 is completely filled, the foreign matter 144 and the space The possibility that the second electrode 142 is electrically connected to the first electrode 136 is completely blocked by the first electrode 146.

5 is a schematic view of a pattern tester for inspecting defective portions according to an embodiment of the present invention.

Various methods can be used for inspecting and repairing organic light emitting layer defects of an organic electroluminescent device. In the present invention, a pattern image obtained by scanning a first substrate to be inspected having an organic light emitting layer is compared with a reference pattern image, The method to detect is used.

The pattern checker 180 includes a stage 182, a light source unit 184, an image sensing unit 184, an optical system 194, a control unit 186 and a display unit 190. The first substrate 112 to be pattern-inspected is positioned on the stage 182 and can move in the x and y axes to scan the first substrate 112. The light source unit 184 emits light for scanning the first substrate 112. The image sensing unit 184 receives light reflected from the first substrate 112 and senses a scan pattern image of the first substrate 112.

The optical system 194 is disposed between the stage 182 and the light source section 184 and has a function of guiding the reflected light incident on the first substrate 112 and reflected by the light source section 184 to the image sensing section 184 . The control unit 186 stores a reference pattern image of the first substrate 112 and receives a scan pattern image of the first substrate 112 to be inspected from the image sensing unit 184 and compares the scan pattern image with a reference pattern image, Site. The display unit 190 receives a defective part from the control unit 186 and displays the defective part as an image.

6 is a schematic view of a repair apparatus for repairing a defective portion according to the present invention.

A repair device capable of locally discharging organic insulating material is used to repair the defective area.

The repair device 170 comprises a support 172, a nozzle 174, a moving device 176, and a display 178. The first substrate 112 for repairing the defective portion is located in the support portion 172 and the nozzle 174 discharges the liquid insulating material 162 to the defective portion. The moving device 176 is connected to the nozzle 174 and functions to position the nozzle 174 on the defective portion. The moving device 176 can be mounted on the support 172 without being mounted on the nozzle 174. [ When the moving device 176 is mounted on the support 172, the nozzle 174 is fixed and the support 172 is moved in the x and y axes to align the defective portion with the lower portion of the nozzle 174.

The display unit 178 has a function of displaying the repair status of the defective portion as an image. When the camera 179 receives the image of the repair status of the defective portion, the operator visually checks whether the defective portion is properly repaired can do. The pattern inspector 180 and the repair apparatus 170 are integrally formed so that it is possible to collectively detect and repair a defective portion of the first substrate on which the organic light emitting layer is formed.

8 is a flowchart for detecting and repairing defects of an organic light emitting device according to an embodiment of the present invention.

The procedure for detecting and repairing defects in the organic electroluminescent device will be described with reference to the pattern tester 180 and the repair device 170 of FIGS. 6 and 7.

A method of detecting and repairing a defective portion of the first substrate 110 is to set a reference pattern image in which a defective portion is not generated in the first substrate 110 on which the organic light emitting layer 140 of FIG. (S02) in which the organic light emitting layer 140 is formed and the first substrate 112 to be inspected is placed on the stage 182 of the pattern inspecting device 180, (S04) of loading the first substrate 112 on which the defective portion is detected on the support table 172 of the repair apparatus 170, comparing the scan pattern image with the reference pattern image (S03) And a step S05 of placing the nozzle 174 on the defective portion of the first substrate 112 and repairing the defective portion by discharging liquid insulating material.

It will be understood by those skilled in the art that the present invention may be embodied in other specific forms without departing from the spirit or essential characteristics thereof. It is therefore to be understood that the above-described embodiments are illustrative in all aspects and not restrictive. The scope of the present invention is defined by the appended claims rather than the detailed description and all changes or modifications derived from the meaning and scope of the claims and their equivalents are to be construed as being included within the scope of the present invention do.

Claims (8)

Forming a first electrode on the substrate;
Forming an organic light emitting layer on the first electrode;
Detecting a defective portion in the substrate on which the organic light emitting layer is formed;
Forming a repair insulating film on the defective portion by supplying an insulating material after the detecting the defective portion; And
Forming a second electrode on the organic light emitting layer and the repair insulating film after the step of forming the repair insulating film;
Wherein the organic electroluminescent device comprises a first electrode and a second electrode.

The method according to claim 1,
Wherein the organic light emitting layer comprises a hole injecting layer, a hole transporting layer, a light emitting material layer, and an electron transporting layer, and after each of the hole injecting layer, the hole transporting layer, the light emitting material layer, And detecting and repairing defective portions are performed separately.
The method according to claim 1,
The organic light emitting layer may include one of an ink jet printer, a nozzle printer, a roll printer, a spray coating, a slot coating, and an offset printer. Wherein the organic light emitting layer is formed using the organic electroluminescent material.
The method according to claim 1,
Wherein the defective portion is detected by comparing the reference pattern image with the scan pattern image of the substrate through a pattern tester.
The method according to claim 1,
Wherein the defective portion is a space in which the organic light emitting layer is not formed in the periphery of the foreign substance on the first electrode and the foreign substance, and the step of forming the repair insulating film on the defective portion surrounds the foreign substance with the insulating material, And filling the organic EL device with an insulating material.
The method according to claim 1,
Wherein the insulating material is a time-series or acryl-based resin, or an inorganic oxidizing material dissolved in an organic solvent is used.
The method according to claim 1,
Wherein the insulating material is cured at a viscosity of 2 to 1000 cp (centi-pi) and at a temperature of 150 DEG C or lower, which does not cause damage to the organic light emitting layer.
The method according to claim 1,
Wherein the repair insulating film uses an ink jet printer or a dispensing device.

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