KR101912336B1 - Method for fabricating the test process for organic light emitting diodes - Google Patents

Abstract

The present invention relates to a method of manufacturing an organic light emitting diode, and more particularly, to a method of manufacturing an organic light emitting diode that can more easily detect a foreign object positioned between a second electrode and an in- And a manufacturing method of an organic light emitting device including an inspection process and a repair process.
A feature of the present invention is that the first and second image pickup units are located on both the upper side and the lower side of the OLED (100 in Fig. 2) and the upper side of the OLED (100 in Fig. 2) And the first imaging unit includes the first and second laser irradiation units.
Accordingly, even when foreign matter is present between the second electrode and the in-cap substrate, the type and position of the foreign matter can be easily confirmed, thereby increasing the process yield and reducing the process cost. Further, there is an effect that the display quality and reliability of the OLED (100 in Fig. 2) are improved.
In addition, since the laser beam for locally insulating the second electrode does not pass through the first electrode during the repair process, it is possible to prevent a problem that the first electrode is damaged by the laser beam .

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a method of fabricating an organic light emitting diode,

The present invention relates to a method of manufacturing an organic light emitting diode, and more particularly, to a method of manufacturing an organic light emitting diode that can more easily detect a foreign object positioned between a second electrode and an in- And a manufacturing method of an organic light emitting device including an inspection process and a repair process.

Until recently, CRT (cathode ray tube) was mainly used as a display device. However, a flat panel display device such as a plasma display panel (PDP), a liquid crystal display device (LCD), and an organic light emitting diode (OLED) Have been widely studied and used.

Among the above flat panel display devices, an organic light emitting element (hereinafter referred to as OLED) is a self-light emitting element, and a backlight used in a liquid crystal display device which is a non-light emitting element is not required.

In addition, it has a better viewing angle and contrast ratio than liquid crystal display devices, is advantageous in terms of power consumption, can be driven by DC low voltage, has a fast response speed, is resistant to external impacts due to its solid internal components, It has advantages.

Particularly, since the manufacturing process is simple, it is advantageous in that the production cost can be saved more than the conventional liquid crystal display device.

OLEDs having such characteristics are largely divided into a passive matrix type and an active matrix type. In a passive matrix type, a device is formed in a matrix form while crossing signal lines, whereas an active matrix type is a pixel A thin film transistor which is a switching element for on / off switching on / off.

In recent years, passive matrix type has many limitations such as resolution, power consumption and lifetime, and active matrix type OLED capable of realizing high resolution and large screen is actively being studied.

1 schematically shows a cross section of a general active matrix type OLED, wherein the OLED is a bottom emission type.

As shown, the OLED 10 comprises a first substrate 1 and a second substrate 2 facing the first substrate 1, and the first and second substrates 1, So that the edges thereof are sealed through a seal pattern (20).

In more detail, a driving thin film transistor DTr is formed for each pixel region on the first substrate 1, a first electrode 11 connected to each driving thin film transistor DTr, An organic light emitting layer 13 that emits light of a specific color is formed on the upper portion of the organic light emitting layer 11 and a second electrode 15 is formed on the organic light emitting layer 13.

The organic light emitting layer 13 displays red, green, and blue colors. As a general method, separate organic materials 13a, 13b, and 13c emitting red, green, and blue light are patterned and used for each pixel.

The first and second electrodes 11 and 15 and the organic light emitting layer 13 formed therebetween form an organic light emitting diode. At this time, the OLED 10 having such a structure constitutes the first electrode 11 as the anode and the second electrode 15 as the cathode.

On the other hand, in OLED 10 having the above-described structure, defective pixels may be generated due to the inflow of foreign matter causing pixel defects therein. The defective pixels are generated as the organic light emitting layer 13 is deteriorated by foreign matter .

Here, when a defective pixel is generated, a dark defect, that is, only a region of a defective pixel appears dark. Since the OLED 10 in which such a dark spot phenomenon occurs must be discarded (discarded) 10) increase in manufacturing cost.

For this purpose, in recent years, it is becoming increasingly important to inspect defective substrates that can be repaired in advance and to remove foreign substances in the OLED 10.

However, in the current inspection process of the OLED 10, when the second substrate 2 is covered with the antireflection film 5, the second electrode 15 and the second substrate 2 located above the organic light- It is very difficult to detect the presence of a foreign object located between the two.

Also, the first electrode 11 may be damaged in the process of removing foreign matter. If the first electrode 11 is damaged, the lifetime of the organic light emitting layer 13 is lowered, which may shorten the lifetime of the OLED 10 itself.

SUMMARY OF THE INVENTION It is a first object of the present invention to improve the reliability of defect inspection of an OLED. It is a second object of the present invention to increase the process yield and reduce the process cost.

A third object of the present invention is to prevent the damage of the first electrode during the repair process. It is a fourth object of the present invention to prevent a shortening of the lifetime of the OLED.

The fifth object of the present invention is to improve the display quality and reliability of the OLED.

In order to achieve the above-mentioned object, the present invention provides a method of manufacturing a thin film transistor, comprising: forming a driving thin film transistor on a substrate; Forming an organic light emitting diode including a first electrode connected to the driving thin film transistor, a second electrode facing the first electrode, and an organic light emitting layer interposed between the first and second electrodes; Forming a lower emission type organic light emitting device by encapsulating a second substrate facing the first substrate; Detecting a defective pixel of the organic light emitting element and outputting a position value thereof; Removing the anti-reflection film coated on the outer surface of the second substrate through the first laser beam corresponding to the position of the defective pixel, and inspecting the outer surface of the second substrate through the first image pick-up unit The present invention also provides a method of manufacturing an organic light emitting device.

The present invention also provides a method of manufacturing a light emitting device, comprising: forming a driving thin film transistor on a substrate; Forming an organic light emitting diode including a first electrode connected to the driving thin film transistor, a second electrode facing the first electrode, and an organic light emitting layer interposed between the first and second electrodes; Forming a lower emission type organic light emitting device by encapsulating a second substrate facing the first substrate; Detecting a defective pixel of the organic light emitting element and outputting a position value thereof; Removing the anti-reflection film coated on the outer surface of the second substrate corresponding to the position of the defective pixel and irradiating a second laser beam outside the second substrate to darken the defective pixel A method of manufacturing a light emitting device is provided.

The present invention also provides a method of manufacturing a light emitting device, comprising: forming a driving thin film transistor on a substrate; Forming an organic light emitting diode including a first electrode connected to the driving thin film transistor, a second electrode facing the first electrode, and an organic light emitting layer interposed between the first and second electrodes; Forming a lower emission type organic light emitting device by encapsulating a second substrate facing the first substrate; Detecting a defective pixel of the organic light emitting element and outputting a position value thereof; Removing the anti-reflection film coated on the outer surface of the second substrate corresponding to the position of the defective pixel and inspecting the outer surface of the second substrate through the first imaging unit; And irradiating a second laser beam outside the second substrate through the removed region of the anti-reflection film to darken the defective pixel.

Here, the first imaging unit includes a first laser irradiator for irradiating the first laser beam, and the first laser beam is continuously irradiated to remove the anti-reflection film corresponding to the position of the defective pixel, or So that only a part of the antireflection film corresponding to the periphery of the foreign substance of the defective pixel is locally irradiated.

The first and second image pick-up units move to the positions of the defective pixels via the image pick-up unit support, respectively, and the defective pixels are detected do.

The first laser beam is a selected one of a continuous wave laser or a pulse wave laser having a wavelength of 266 nm, 355 nm, 532 nm or 1064 nm, and the second laser beam is a selected one of the defective pixels The second electrode around the foreign object is irradiated so as to be electrically insulated or a part of the second electrode together with the foreign object is removed.

The first image pickup unit includes a first laser irradiator for irradiating a first laser beam, and the anti-reflection film is removed through the first laser beam, and the anti-reflection film is selected from a grinder, It is removed by one.

The first imaging unit may include a second laser irradiation unit for irradiating the second laser beam, and the second laser beam may be a continuous wave laser having a wavelength of 266 nm, 355 nm, 532 nm, or 1064 nm, And a pulse wave laser.

As described above, according to the present invention, the first and second image pickup units are located on both the upper side and the lower side of the OLED, and the first image pickup unit located on the upper side of the OLED, that is, And the second laser irradiating unit, it is possible to easily identify the type and position of the foreign object even in the presence of foreign matter between the second electrode and the in-cap substrate, thereby improving the process yield and reducing the process cost have. Further, the display quality and reliability of the OLED are improved.

In addition, since the laser beam for locally insulating the second electrode does not pass through the first electrode during the repair process, it is possible to prevent a problem that the first electrode is damaged by the laser beam .

BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 schematically shows a cross-section of a general active matrix type OLED;
Figure 2 schematically shows a cross-section of an OLED of the present invention;
3 is a process flow diagram showing a step of defect inspection of an OLED.
4 is a view schematically showing a state in which a close inspection is performed;
5 is a view schematically showing a state in which a repair process is performed;
FIGS. 6A and 6B are schematic views illustrating removal of an antireflection film in the process of FIG.
FIGS. 7A and 7B are views schematically showing a method of irradiating a laser beam in the course of the repair process of FIG. 5;

Hereinafter, embodiments according to the present invention will be described in detail with reference to the drawings.

2 is a schematic view showing a cross section of an OLED of the present invention.

Prior to the description, the OLED 100 is divided into a top emission type and a bottom emission type according to the transmission direction of the emitted light. The bottom emission type has high stability and high degree of freedom in the process, Studies on the bottom emission type are being actively carried out. Hereinafter, the present invention will be described by way of an example of a bottom emission type.

1, the OLED 100 includes a substrate 101 on which a driving and switching thin film transistor DTr (not shown) and an organic light emitting diode E are formed, and an encapsulation substrate 102 for encapsulation .

A semiconductor layer 103 is formed on the pixel region P on the substrate 101. The semiconductor layer 103 is made of silicon and has a central portion including an active region 103a and a channel region 103b. And source and drain regions 103b and 103c doped with impurities at a high concentration on both sides thereof.

A gate insulating layer 105 is formed on the semiconductor layer 103.

The gate electrode 107 is formed on the gate insulating film 203 in correspondence with the active region 103a of the semiconductor layer 103 and a gate wiring extending in one direction although not shown in the drawing.

The first interlayer insulating film 109a and the gate insulating film 105 under the first interlayer insulating film 109a are formed on the entire upper surface of the gate electrode 107 and the gate wiring (not shown) And first and second semiconductor layer contact holes 111a and 111b respectively exposing the source and drain regions 103b and 103c located on both sides of the first and second semiconductor layer contact holes 103a and 103a.

Next, upper portions of the first interlayer insulating film 109a including the first and second semiconductor layer contact holes 111a and 111b are separated from each other by a source exposed through the first and second semiconductor layer contact holes 111a and 111b, And source and drain electrodes 113 and 115 which are in contact with the drain regions 103b and 103c, respectively.

And a drain contact hole 117 exposing the drain electrode 115 to the upper portion of the first interlayer insulating film 109a exposed between the source and drain electrodes 113 and 115 and the two electrodes 113 and 115, An insulating film 109b is formed.

At this time, the semiconductor layer 103 including the source and drain electrodes 113 and 115 and the source and drain regions 103b and 103c contacting the electrodes 113 and 115 and the gate electrode 103 formed on the semiconductor layer 103 (107) constitute a driving thin film transistor (DTr).

On the other hand, although not shown in the drawing, data lines (not shown) are formed which cross the gate wiring (not shown) and define the pixel region P. The switching thin film transistor (not shown) has the same structure as the driving thin film transistor DTr and is connected to the driving thin film transistor DTr.

In the drawing, the switching thin film transistor (not shown) and the driving thin film transistor DTr are shown as an example of a top gate type in which the semiconductor layer 103 is a polysilicon semiconductor layer. As a variation thereof, It may be formed as a bottom gate type of impurity amorphous silicon.

A first electrode 211 that is an anode is formed in a region of the upper portion of the second interlayer insulating film 109b that is substantially connected to the drain electrode 110b of the driving thin film transistor DTr, For example, the first electrode 211 is made of a material having a relatively high work function value, and functions as a constituent element of the organic electroluminescent diode E.

The first electrode 211 is formed for each pixel region P and a bank 119 is located between the first electrodes 211 formed for each pixel region P.

That is, the first electrodes 211 are formed in a structure in which the banks 119 are divided into the pixel regions P with the boundaries of the respective pixel regions P being separated.

An organic light emitting layer 213 is formed on the first electrode 211.

Here, the organic light emitting layer 213 may be a single layer made of a light emitting material. In order to increase the light emitting efficiency, a hole injection layer, a hole transport layer, an emitting material layer, , An electron transport layer (electron transport layer), and an electron injection layer (electron injection layer).

The organic light emitting layer 213 may emit red (R), green (G), and blue (B) colors. In general, (B) a separate organic material emitting a color is used in a pattern.

A second electrode 215, which is a cathode, is formed on the organic light emitting layer 213.

In this case, the second electrode 215 may be made of an opaque conductive material. For example, the second electrode 215 may be made of a metal material having a relatively low work function value such as aluminum (Al), an aluminum alloy (AlNd), silver (Ag) , Gold (Au), and aluminum magnesium alloy (AlMg).

Accordingly, the light emitted from the organic light emitting layer 213 is driven by the lower light emitting method, which is emitted toward the transparent first electrode 211.

When a predetermined voltage is applied to the first electrode 211 and the second electrode 215 in accordance with a selected color signal, the OLED 100 emits light from the holes injected from the first electrode 211 and the holes injected from the second electrode 215 The provided electrons are transported to the organic light emitting layer 213 to form an exciton. When the excitons transit from the excited state to the ground state, light is emitted and emitted in the form of visible light.

At this time, the emitted light passes through the transparent first electrode 215 and exits to the outside, so that the OLED 100 realizes an arbitrary image.

A passivation layer 120 in the form of a thin film is formed on the driving thin film transistor DTr and the organic light emitting diode E and an encapsulation substrate 102 is formed on the passivation layer 120 Thus, the substrate 101 and the in-cap substrate 102 are bonded to each other through the adhesive layer 130 having adhesive properties.

Thereby, the OLED 100 is encapsulated.

At this time, the passivation layer 120 protects the driving thin film transistor DTr and the organic electroluminescent diode E formed on the substrate 101 by preventing external moisture from penetrating into the organic electroluminescent diode E, , And is formed on the substrate 101 to surround the organic electroluminescent diode (E).

The substrate 101 may be formed of glass, plastic, stainless steel, or the like. The in-cap substrate 102 may be made of glass, and an anti-reflection film (not shown) may be formed on the outer surface of the in- 140 are preferably coated.

The antireflection film 140 may be made of a metal or a metal nitride such as NiCr or TiN. The antireflection film 140 minimizes the reflection of external light in the process of driving the OLED 100 in a bottom emission type, 100) to reduce the glare phenomenon and improve the visibility and the luminance characteristics.

On the other hand, in OLED 100 having the above-described structure, defective pixels may be generated due to the entry of foreign matter causing a pixel defect therein, which is caused by deterioration of organic emission layer 213 due to foreign matter .

Here, when a defective pixel is generated, a dark defect, that is, only a region of a defective pixel appears dark. Since the OLED 100 in which such a dark spot phenomenon occurs must be discarded (discarded) 100) manufacturing cost.

In order to do this, in recent years, an inspection process for removing a foreign substance in the OLED 100 by extracting a defective substrate in a state where repair is possible is getting more and more important.

Here, the defect inspection process of the OLED 100 is largely divided into a lighting inspection, an inspection, and a repair process. This will be described in more detail with reference to FIG.

FIG. 3 is a process flow chart showing the defect inspection process of the OLED step by step, FIG. 4 is a view schematically showing the progress of the overlay inspection process, and FIG. 5 is a view schematically showing a process of repair process .

First, a signal is applied to the OLED 100 (FIG. 2) encapsulated in the first step St1 to perform a lighting test. In the lighting test, a signal is applied to a pad portion (not shown) of the OLED (100 in FIG. 2) by a probe inspecting device (not shown) or the like to check whether the OLED (100 in FIG.

That is, it is checked whether there is a defective pixel in the OLED (100 in FIG. 2) through the lighting test, and the OLED (100 in FIG. 2) in which no defective pixel is found is transferred to the subsequent process. The received OLED (100 in FIG. 2) proceeds to the close inspection step, which is the second step (St2), in order to check whether there is a defect.

At this time, the OLED (100 in Fig. 2) which has been judged as defective detects the position of the defective pixel in the lighting test, the position of the detected defective pixel is outputted as the coordinate information, St2).

4, the first and second image sensing units 310 and 320 are positioned above and below the OLED 100, that is, outside the substrate 101 and the in-cap substrate 102, respectively, The inspection is performed on the upper and lower sides of the OLED 100 through the first and second image pickup units 310 and 320.

The first and second image sensing units 310 and 320 are optical microscopes at a high magnification capable of observing defective pixels of the OLED 100. The first and second image sensing units 310 and 320 include a light source for emitting light toward the OLED 100 A lens unit 313 for enlarging defective pixels of the OLED 100 at a high magnification, and a CCD camera 315 for converting the enlarged image into image data.

The lens unit 313 includes a plurality of objective lenses 313a each having a constant optical power so that the objective lens 313a having a desired magnification can be positioned close to the OLED 100, It can be observed at a magnification.

For example, the objective lens 313a may have optical magnifications of 2x, 5x, 7.5x, 10x, and 20x, respectively.

At this time, the image of the defective pixel enlarged through the lens unit 313 is displayed on an external monitor (not shown) through the CCD camera 315, so that the operator can see it.

At this time, the first and second image sensing units 310 and 320 are mounted on the image sensing unit support (not shown), respectively, and are horizontally and vertically movable. Here, the structure enabling the horizontal and vertical movements of the first and second image sensing units 310 and 320 uses a commonly used linear movement mechanism.

Therefore, the first and second image pick-up units 310 and 320 are moved to the position coordinates of the defective pixel through the on-off inspection, and only the area where the defective pixel is detected is advanced.

Particularly, in the defect inspection process of the present invention, the first image pickup unit 310 located outside the in-cap substrate 102 of the OLED 100 includes the first laser irradiation unit 317, The anti-reflection film 140 coated on the outer surface of the in-cap substrate 102 is removed through the first laser beam LB1 irradiated from the first laser beam LB1.

That is, an anti-reflection film 140 is coated on the outer surface of the in-cap substrate 102 to minimize the reflection of external light. The anti-reflection film 140 is formed on the outer surface of the in- 317 are adapted to remove the anti-reflection film 140 by irradiating the first laser beam LB1 corresponding to the position of the defective pixel.

Accordingly, the defective pixel of the OLED 100 can be observed on the upper side of the OLED 100 through the first image sensing unit 310.

Therefore, even when the foreign object B which causes the defective pixel is located between the second electrode 215 and the in-cap substrate 102, the type and position of the foreign object B can be detected accurately.

That is, the second electrode 215 constituting the cathode of the organic electroluminescent diode E may be formed of an opaque metal material having a relatively low work function value as compared with the first electrode 211 constituting the anode. have.

When the defective pixel of the OLED 100 is observed through the second imaging unit 320 at the lower side of the OLED 100, B) can not be confirmed.

In this way, if the existence of the foreign matter B can not be confirmed, the cause of the defective pixel can not be grasped properly. That is, since the cause of the defective pixel is not grasped properly, such a defective pixel continuously occurs, which results in a decrease in the process yield and an increase in the process ratio.

Which in turn reduces the reliability of the OLED 100.

Therefore, in the defect inspection process of the present invention, the first image pickup unit 310 is positioned outside the in-cap substrate 102, and the first image pickup unit 310 is disposed on the outer surface of the in- (B) between the second electrode 215 and the in-cap substrate 102, which can not be detected from the lower side of the OLED 100, by including the first laser irradiation unit 317 capable of removing the first electrode 140, .

Therefore, the cause of the defective pixel can be grasped more clearly, and the process yield can be increased and the process ratio can be reduced. Further, display quality and reliability of the OLED 100 are improved.

The first laser beam LB1 emitted from the first laser irradiator 317 may be a continuous wave laser or a pulse wave laser having a wavelength of 266 nm, 355 nm, 532 nm, or 1064 nm .

After closely observing the type and position of the foreign object B in the defective pixel through the close inspection, the OLED 100 in which the defective pixel is found proceeds the repair process in the third step St3.

The repair process is performed through the second laser irradiation unit 319 provided in the first imaging unit 310 located outside the in-cap substrate 102 of the OLED 100 as shown in FIG.

That is, the first imaging unit 310 located outside the in-cap substrate 102 further includes a second laser irradiation unit 319. In the course of performing the close inspection, After the anti-reflection film 140 coated on the outer surface of the in-cap substrate 102 is removed through the first laser irradiation unit 317 and the second laser irradiation unit 319 via the second laser irradiation unit 319, And irradiates the second electrode 215 of the defective pixel to be positioned.

The second laser beam LB2 emitted from the second laser irradiator 319 is locally irradiated onto the second electrode 215 located in the defective pixel causing the short circuit by the foreign object B and a part of the defective pixel To be in an isolation state.

That is, a part of the defective pixel is to be ignited.

By providing the second laser irradiation unit 319 in the first imaging unit 310 located outside the in-cup substrate 102, the second laser irradiation unit 319 can be moved by the second laser beam LB2 emitted from the second laser irradiation unit 319 It is possible to prevent the first electrode 211 from being damaged.

That is, the first electrode 211 is more easily damaged by the second laser beam LB2 than the second electrode 215. When the first electrode 211 is damaged in this way, the first electrode 211 Moisture and oxygen are introduced from the thin film layers located at the bottom of the organic light emitting layer 213, resulting in deterioration of the organic light emitting layer 213 which is very sensitive to moisture and oxygen.

As a result, the electrodes 211 and 215 are oxidized and corroded. In such a case, the risk of current leakage and short circuit is increased, and the lifetime of the OLED 100 itself is reduced.

Therefore, in the repairing process of the defect inspection process of the present invention, an anti-reflection film (not shown) coated on the outer surface of the in-cap substrate 102 corresponding to the defective pixel in which the foreign object B is located through the first laser irradiation unit It is possible to prevent the first electrode 211 from being damaged by the second laser beam LB2 by irradiating the second laser beam LB2 through the region of the second laser beam LB2.

At this time, the wavelength of the second laser beam LB2 irradiated through the second laser irradiation unit 319 may be 266 nm, 355 nm, 532 nm, or 1064 nm, but is not limited thereto.

FIGS. 6A and 6B are schematic views illustrating removal of the antireflection film in the process of FIG.

As shown in FIG. 6A, the anti-reflection film 140 coated on the outer surface of the in-cap substrate (102 in FIG. 5) through the first laser irradiation portion (317 in FIG. 4) The beam LB1 may be continuously irradiated so that the anti-reflection film 140 coated on the outer surface of the in-cap substrate 102 (FIG. 4) corresponding to the position of the defective pixel can be removed.

In addition, as shown in FIG. 6B, only a necessary portion of the antireflection film 140 may be partially removed.

At this time, although not shown in the drawing, it is also possible to remove the antireflection film 140 coated on the outer surface of the in-cap substrate 102 (FIG. 4) by using a grinder or an etching solution in addition to the laser.

FIGS. 7A and 7B are views schematically showing a method of irradiating a laser beam in the course of the repair process of FIG.

7A, in the process of irradiating the second laser beam LB2 through the second laser irradiation portion (319 in Fig. 5), the second laser beam LB2 is irradiated onto the second electrode The second electrode 215 around the foreign object B may be electrically insulated so that the second electrode 215 where the foreign object B is located may be electrically isolated as shown in FIG. And a part of the second electrode 215 may be removed together with the foreign object B. [

As described above, the defect inspection process of the present invention places the first and second imaging units (310 and 320 in FIG. 5) on both the upper side and the lower side of the OLED (100 in FIG. 5) 5) of the first and second laser irradiation units (317 in Fig. 4 and 319 in Fig. 5) positioned on the upper side of the in-cap substrate (102 in Fig. It is possible to easily identify the type and position of the foreign object B even when the foreign object B exists between the second electrode 215 and the in-cap substrate 102 (FIG. 5) Can be saved. Further, display quality and reliability of the OLED (100 in Fig. 5) are improved.

In addition, by preventing the second laser beam LB2 for locally insulating the second electrode 215 from passing through the first electrode (211 in FIG. 5) during the repair process, the second laser beam LB2 It is possible to prevent the first electrode (211 in FIG.

The present invention is not limited to the above-described embodiments, and various modifications may be made without departing from the spirit of the present invention.

101: substrate, 102: in-cap substrate, 120: passivation layer, 130:
An organic light emitting layer, and a second electrode.
310, 320: first and second image pickup units
311, 321: Light source, 313, 323: Lens parts (313a, 323a: Objective lens)
315, 325: CCD camera, 317: first laser irradiation unit
B: foreign matter, LB1: first laser beam, E: organic light emitting diode
DTr: driving thin film transistor, P: pixel region

Claims (12)

Forming a driving thin film transistor on the first substrate;
Forming an organic light emitting diode including a first electrode connected to the driving thin film transistor, a second electrode facing the first electrode, and an organic light emitting layer interposed between the first and second electrodes;
Forming a lower emission type organic light emitting device by encapsulating a second substrate facing the first substrate;
Detecting a defective pixel of the organic light emitting element and outputting a position value thereof;
Positioning a first imaging unit on the outside of the second substrate and positioning a second imaging unit on the outside of the first substrate;
Removing the anti-reflection film coated on the outer surface of the second substrate by irradiating the first laser beam through the first image pickup unit corresponding to the position of the defective pixel;
Performing a first close inspection on the outside of the second substrate through the removed area of the anti-reflection film through the first imaging unit;
Irradiating a second laser beam through the first image pickup unit according to whether or not the first inspection is performed to make a first dark telephone call with a defective pixel;
Performing a second close inspection on the outside of the first substrate through the second imaging unit corresponding to the position of the defective pixel;
Causing the second imaging unit to call the second defective pixel according to whether or not the second inspection is performed
Wherein the first and second inspection are simultaneously performed on the outside of the first and second substrates,
Wherein the first and second arms are simultaneously moved on the outer sides of the first and second substrates or sequentially.
The method according to claim 1,
The first and second close-
The first imaging unit checks presence or absence of foreign matter of the defective pixel between the second substrate and the second electrode,
Wherein the second imaging unit confirms presence or absence of foreign matter in the defective pixel between the first substrate and the second electrode.
delete The method according to claim 1,
Wherein the first imaging unit includes a first laser irradiation unit for irradiating the first laser beam.
The method according to claim 1,
The first laser beam is continuously irradiated to remove the antireflection film corresponding to the position of the defective pixel or to remove only a part of the antireflection film corresponding to the periphery of the foreign substance of the defective pixel, ≪ / RTI >
The method according to claim 1,
Wherein the first and second imaging units are respectively moved to positions of the defective pixels via an imaging unit support.

The method according to claim 1,
And the defective pixel is detected through a lighting test.
The method according to claim 1,
Wherein the first laser beam is a selected one of a continuous wave laser or a pulse wave laser having a wavelength of 266 nm, 355 nm, 532 nm or 1064 nm.
The method according to claim 1,
Wherein the second laser beam is irradiated such that the second electrode around the foreign object of the defective pixel is electrically insulated or a part of the second electrode is removed together with the foreign matter.
delete delete The method according to claim 1,
Wherein the first imaging unit includes a second laser irradiation unit for irradiating the second laser beam and the second laser beam is a continuous wave laser or a pulsed wave laser having a wavelength of 266 nm, 355 nm, 532 nm, or 1064 nm, (pulse wave laser).

Images