JP2008203636A - Manufacturing method of array substrate, manufacturing method of display device, and array substrate and display device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of an array substrate which has high product yield, a manufacturing method of a display device, and the array substrate and display device. <P>SOLUTION: On a substrate, a plurality of wirings, and a plurality of pixels P which are connected to the wirings and have a plurality of conduction portions and include non-overlap portions 31, 32, and 33 which are provided such that one of the plurality of conduction portions is put off other conduction portions and the wirings and are disposed at intervals with the other conduction portions and wirings in one direction are formed. It is inspected whether a pixel P has a defect and when the pixel has the defect, the non-overlap portion of the defective pixel is irradiated with laser light to cut the non-overlap portion irradiated with the laser light, thereby repairing the defective pixel. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a method for manufacturing an array substrate, a method for manufacturing a display device including the array substrate, an array substrate manufactured using the method for manufacturing an array substrate, and a display device manufactured using the method for manufacturing the display device.

  In recent years, organic EL display devices, liquid crystal display devices, and the like have been used as display devices. Since an organic EL display device does not require a backlight unit used in a liquid crystal display device, the product can be made thinner, lighter, lower in power consumption, lower in cost, and mercury-free. Since the organic EL display device is a self-luminous display device, it has characteristics such as a wide viewing angle and a high-speed response. From the above, the organic EL display device has attracted attention as a product for moving images such as a television receiver as well as a product for still images such as a notebook personal computer (PC), a monitor and a viewer.

  The organic EL display device includes an array substrate. The array substrate has a glass substrate, a plurality of wirings formed on the glass substrate, and a plurality of pixels arranged in a matrix on the glass substrate. Each pixel has a TFT (thin film transistor), an organic EL element, and an auxiliary capacitance element. Each organic EL element has an anode, a cathode facing the anode, and an EL layer sandwiched between the anode and the cathode. The EL layer contains an organic compound having a light emitting function and can emit light in any one of red, green, and blue.

  By the way, in the process of manufacturing the organic EL display device, a bright spot pixel that is always in a light emitting state, that is, a defective pixel may be formed. The defective pixel is formed, for example, by generating a short circuit between the electrodes of the auxiliary capacitance element. In this case, a current always flows from the auxiliary capacitance element to the organic EL element. If there is a defective pixel, the image quality and display quality deteriorate significantly, and the product cannot be shipped. For this reason, defective pixels need to be repaired.

  As a repair method, for example, Patent Document 1 discloses a repair method in which a wiring connected to an organic EL element of a defective pixel is irradiated with laser light and the wiring is cut. As a result, the current that always flows through the organic EL element can be eliminated, and the defective pixel is restored to a pixel that does not always emit light, that is, a dark spot pixel.

In addition, when repairing a defective pixel, the electrode of the auxiliary capacitance element may be irradiated with laser light, and the electrode may be cut and repaired. As a result, the current that always flows from the auxiliary capacitance element to the organic EL element can be eliminated, and the current flows only from the TFT to the organic EL element. For this reason, the defective pixel is repaired (pseudo good point) and functions as a normal pixel.
International Publication WO 2004/068446

By the way, the wiring and the conductive portion of the pixel are overlapped, crossed, or adjacent to each other. For this reason, when irradiating a defective pixel with a laser beam, it is difficult to irradiate a laser beam only to the part to cut. As described above, since defective pixels cannot be stably repaired, a manufacturing method capable of improving the product yield is demanded.
The present invention has been made in view of the above points, and an object thereof is to provide an array substrate manufacturing method, a display device manufacturing method, an array substrate, and a display device having a high product yield.

In order to solve the above problems, a method of manufacturing an array substrate according to an aspect of the present invention includes:
A plurality of wirings and a plurality of conductive parts connected to the wirings are provided on the substrate, and one of the plurality of conductive parts is separated from the other conductive parts and the wirings in one direction. Forming a plurality of pixels including a non-overlapping portion provided at intervals between the other conductive portion and the wiring,
Inspecting the pixel for defects,
When the pixel has a defect, the non-overlapping portion of the pixel having the defect is irradiated with laser light, the non-overlapping portion irradiated with the laser light is cut, and the defective pixel is repaired. .

In addition, a method for manufacturing a display device according to another aspect of the present invention includes:
A plurality of wirings and a plurality of conductive parts connected to the wirings are provided on the substrate, and one of the plurality of conductive parts is separated from the other conductive parts and the wirings in one direction. Forming an array substrate comprising a plurality of pixels including non-overlapping portions provided at intervals between the other conductive portions and the wirings;
A counter substrate is disposed opposite to the surface of the array substrate on which the pixels are formed,
Inspecting the pixel for defects,
When the pixel has a defect, the non-overlapping portion of the pixel having the defect is irradiated with laser light, the non-overlapping portion irradiated with the laser light is cut, and the defective pixel is repaired. .

In addition, the array substrate according to another aspect of the present invention,
A plurality of wires formed on the substrate;
Formed on the substrate, connected to the wiring, having a plurality of conductive portions, one conductive portion of the plurality of conductive portions being separated from the other conductive portions and the wiring and the other in one direction And a plurality of pixels including a non-overlapping portion provided at intervals between the conductive portion and the wiring.

In addition, a display device according to another aspect of the present invention includes:
A plurality of wirings formed on the substrate; and a plurality of conductive parts formed on the substrate and connected to the wirings, wherein one conductive part of the plurality of conductive parts includes another conductive part and the conductive part An array substrate including a plurality of pixels that are separated from the wiring and include the other conductive portion in one direction and a non-overlapping portion provided at an interval from the wiring;
A counter substrate disposed opposite to the surface of the array substrate on which the pixels are formed.

  According to the present invention, it is possible to provide an array substrate manufacturing method, a display device manufacturing method, an array substrate, and a display device with a high product yield.

  Hereinafter, a display device manufactured by a display device manufacturing method and a display device manufacturing method according to the present invention with reference to the drawings, an organic EL display device manufacturing method, and an organic EL display device manufacturing method. An embodiment applied to an EL display device will be described in detail. First, the configuration of the organic EL display device will be described.

  As shown in FIGS. 1, 2, 3 and 4, the organic EL display device includes an array substrate 1 having a display surface S and a display region R, and a sealing substrate 2 as a counter substrate. . The sealing substrate 2 is disposed opposite to the array substrate 1 with a predetermined gap. A sealing material (not shown) is provided along the periphery of the sealing substrate 2, and the outside of the display area R of the array substrate 1 and the sealing substrate 2 are bonded together by this sealing material. Therefore, the sealing substrate 2 and the sealing material keep the atmosphere between the display substrate R and the array substrate 1 in an airtight manner.

A space surrounded by the display region R and the sealing substrate 2 of the array substrate 1 is filled with an inert gas such as Ar gas or N ₂ . Further, a desiccant (not shown) is disposed inside the space, and is maintained in a dry state that does not adversely affect the organic EL element 13 described later.

The array substrate 1 has, for example, a glass substrate 10 as a transparent substrate. An undercoat layer 11 is laminated on the glass substrate 10. As the undercoat layer 11, for example, a SiN _X layer and a SiO ₂ layer are sequentially laminated.

  In the display region R, on the undercoat layer 11, a plurality of scanning lines 15 as a plurality of wirings, a plurality of gate wirings 17, a plurality of signal lines 21, a plurality of auxiliary capacitance lines 25, and a plurality of pixels P are provided. Is formed. The scanning line 15, the gate line 17 and the plurality of auxiliary capacitance lines 25 extend in the first direction d1. The signal line 21 extends in a second direction d2 orthogonal to the first direction d1. The plurality of pixels P are arranged in a matrix in the first direction d1 and the second direction d2.

  The pixel P is connected to the plurality of wirings, that is, the scanning line 15, the gate wiring 17, and the plurality of auxiliary capacitance lines 25. The pixel P has a plurality of conductive portions. The pixel P includes non-overlapping portions 31, 32, and 33. The non-overlapping portions 31, 32, and 33 are configured such that at least one conductive portion of the plurality of conductive portions is separated from the other conductive portions and the plurality of wirings, and is spaced from the other conductive portions and the plurality of wirings in one direction. Is provided.

  More specifically, each pixel P includes a switching element 12, an organic EL element 13 as a display element, and an auxiliary capacitance element 14. The switching element 12 includes a TFT (thin film transistor) 12a and a TFT 12b. The organic EL element 13 can emit light in any one of red, green, and blue. Each organic EL element 13 is connected to the TFT 12b.

  The TFT 12 a is connected to the scanning line 15 and the signal line 21. Each TFT 12a is of a double gate type and has two gate electrodes 16, a gate insulating film 18, and a channel layer 19a. The gate electrode 16 is formed extending from the scanning line 15. The channel layer 19 a is formed by the semiconductor wiring 19. Non-overlapping portions 31 and 32 are formed in the channel layer 19a.

  The non-overlapping portion 31 is provided away from the gate electrode 16 and the signal line 21 and is spaced from the scanning line 15 and the gate wiring 17 in the second direction d2. The non-overlapping portion 32 is provided apart from the two gate electrodes 16 and is spaced from the scanning line 15 and the gate wiring 17 in the second direction d2. In this embodiment, the length L1 of the non-overlapping portion 31 in the first direction d1 and the length L2 of the non-overlapping portion 32 in the first direction d1 are 1 μm or more.

  The TFT 12b has a gate wiring 17, a gate insulating film 18, and a channel layer 19b. The TFT 12b is connected to the TFT 12a. The channel layer 19 b is formed by the semiconductor wiring 19.

  The organic EL element 13 includes a first connection wiring 19c connected to the TFT 12b, a cathode 26 as a first electrode connected to the first connection wiring 19c, an anode 29 as a second electrode facing the cathode 26, And an organic active layer 28 as a shielding layer sandwiched between a cathode 26 and an anode 29.

  Here, the first connection wiring 19 c is formed in the semiconductor wiring 19 and has a non-overlapping portion 33. The non-overlapping portion 33 is separated from the gate wiring 17 and the cathode 26 and is provided at an interval from the cathode 26 and the signal line 21 in the first direction d1. In this embodiment, the length L3 of the non-overlapping portion 33 in the second direction is 1 μm or more.

  The auxiliary capacitance element 14 is opposed to the second connection wiring 22 connected to the TFTs 12a and 12b, the first auxiliary capacitance electrode 23 connected to the second connection wiring 22, and the first auxiliary capacitance electrode 23 through an insulating film. The second auxiliary capacitance electrode 24 disposed and a third connection wiring 25 a connected to the second auxiliary capacitance electrode 24 and the auxiliary capacitance line 25 are provided. The third connection wiring 25 a is formed by extending a part of the auxiliary capacitance line 25.

The scanning lines 15, the gate electrodes 16, and the gate wirings 17 are formed on the undercoat layer 11 using a conductive material such as MoW, Al, or Ta. The gate insulating film 18 is formed on the undercoat layer 11, the scanning line 15, the gate electrode 16, and the gate wiring 17 using an insulating material such as SiO _X. The semiconductor wiring 19 is formed on the gate insulating film 18 so as to overlap the gate electrode 16 and the gate wiring 17. The semiconductor wiring 19 is formed of a semiconductor of polysilicon (hereinafter referred to as p-Si) or amorphous silicon (hereinafter referred to as a-Si).

The interlayer insulating film 20 a is formed on the gate insulating film 18 and the semiconductor wiring 19 using an insulating material such as SiO _X or SiN _X. A signal line 21 and a second connection wiring 22 are formed on the interlayer insulating film 20a.

  The signal line 21 is connected to the source region of the channel layer 19a through a contact hole h1 formed in the interlayer insulating film 20a. The second connection wiring 22 is connected to the drain region of the channel layer 19a and the source region of the channel layer 19b through a contact hole h2 formed in the interlayer insulating film 20a. The signal line 21 and the second connection wiring 22 are formed using a conductive material such as Al or Ta.

  An interlayer insulating film 20 b is formed on the interlayer insulating film 20 a, the signal line 21, and the second connection wiring 22. A cathode 26 is formed on the interlayer insulating film 20b. The cathode 26 is connected to the first connection wiring 19c (the drain region of the channel layer 19b) through a contact hole h3 formed in the interlayer insulating film 20a and the interlayer insulating film 20b. Although not described in detail, the auxiliary capacitance element 14 is formed by being laminated like the switching element 12 and the organic EL element 13. That is, the first auxiliary capacitance electrode 23 and the second auxiliary capacitance electrode 24 are stacked via the insulating film.

A partition layer 27 is formed on the interlayer insulating film 20b. The partition wall layer 27 is formed in a lattice shape with portions protruding along the periphery of each organic active layer 28 described later. The partition layer 27 is formed using an insulating light shielding material such as SiO _X.

  Each organic EL element 13 includes a cathode 26, an anode 29, and an organic active layer 28 that serves as a light emitter. The cathode 26 is made of a conductive material such as ITO (indium tin oxide) or Al. In this embodiment, since the outer surface of the array substrate 1 functions as the display surface S, the cathode 26 is made of light-transmitting ITO.

  The organic active layer 28 is formed so as to overlap the cathode 26. Although not shown, the organic active layer 28 includes a hole transport layer, a hole injection layer, a light emitting layer, an electron injection layer, and an electron transport layer. The anode 29 is integrally formed on the partition layer 27 and the organic active layer 28. The anode 29 is made of a conductive material such as Al, MoW, or ITO. The sealing substrate 2 has a cover 40. The cover 40 is made of, for example, glass.

  Next, the manufacturing apparatus 50 of the organic EL display device configured as described above will be described in detail. This manufacturing apparatus 50 is for inspecting the presence or absence of defective pixels on the array substrate after the array substrate 1 and the sealing substrate 2 are bonded together or before bonding, and for repairing the defective pixels (making a good point). Device. Here, the defective pixel is a pixel that deteriorates image quality and display quality, and is a defective pixel that needs to be repaired.

  As shown in FIG. 5, the manufacturing apparatus 50 includes a main body 51 having an anti-vibration function, a stage 52 movable in a first direction X, a second direction Y, and a third direction Z, which are orthogonal to each other by the main body, It has a laser oscillator main body 53, a control unit 54 that can control the main body 51 and the laser oscillator main body 53, a CCD 55, and a monitor 56. The laser oscillator body 53 has an objective lens 53a as an optical system. Information on the image of the laser irradiation location acquired by the laser oscillator main body 53 is transmitted to the monitor 56 via the CCD 55. Then, an image of the laser irradiation location is displayed on the monitor 56.

Next, a method for manufacturing the organic EL display device configured as described above will be described.
As shown in FIG. 5, first, the array substrate 1 having the scanning lines 15, the gate wirings 17, the signal lines 21, the auxiliary capacitance lines 25, and the pixels P is formed on the glass substrate 10 and sealed in the array substrate 1. The board | substrate 2 is opposingly arranged. Then, the array substrate 1 and the sealing substrate 2 are bonded together.

  Thereafter, the organic EL display device shifts to an inspection process and a repair process. In the inspection process, it is inspected whether the pixel P has a defect, and in the repair process, the defective pixel is repaired.

Next, an inspection method and a repair method in the method for manufacturing the organic EL display device will be described.
As shown in FIG. 5, first, an organic EL display device as a processing target is prepared. In this embodiment, a case will be described in which the switching element 12 of one or more pixels P of the organic EL display device is defective and the function as the switching element is lost. The defective pixel P always emits light and becomes a bright spot.

  Next, the organic EL display device is transported, and the organic EL display device is placed on the stage 52. At this time, the organic EL display device is arranged so that the laser oscillator main body 53 faces the array substrate 1. Thereafter, the organic EL display device is driven to display all the organic EL elements 13 in black. Then, the defective pixel P becomes a bright spot, and the bright spot pixel is detected by visual observation, for example.

  Next, as shown in FIGS. 5 and 6, the stage 52 is moved so that the bright spot pixel P and the objective lens 53 a face each other, and the bright spot pixel image acquired through the objective lens is monitored 56. To display. Subsequently, the laser oscillator main body 53 is used to irradiate the non-superimposing portion 33 of the pixel P in which a defect is generated via the objective lens 53a with the laser beam, thereby cutting the non-superimposing portion 33. Needless to say, when the laser beam is irradiated, the laser beam is irradiated from the opposite side of the surface of the array substrate 1 on which the pixels P are formed.

  As a result, no current flows through the organic EL element 13, and the defective pixel P is restored to a dark pixel. When a plurality of defective pixels P are detected, the non-overlapping portion 33 of each pixel may be irradiated with laser light and the non-overlapping portion 33 may be cut. When the inspection process and the repair process are finished, the manufacturing process of the organic EL display device is finished.

  According to the organic EL display device and the method for manufacturing the organic EL display device configured as described above, it is assumed that a non-predictable defect occurs, and the non-overlapping portions 31, 32, 33 are formed in the pixel P in advance. Yes.

  When there is a defective pixel P to be a bright spot, the non-overlapping portion 33 of the defective pixel is irradiated with laser light to cut the non-overlapping portion 33. Since the non-overlapping portion 33 is located away from other conductive portions and wirings and is provided at an interval from the other conductive portions and wirings, it is possible to irradiate laser light only to the portions to be cut. .

  For this reason, there is no damage that the laser beam gives to the pixels P other than the non-overlapping portion 33. The defective pixel P is repaired and becomes a dark spot. As described above, since defective pixels P can be stably repaired, an organic EL display device manufacturing method capable of improving the product yield can be obtained, and an organic EL display device capable of improving the manufacturing yield can be obtained.

  Note that the present invention is not limited to the above-described embodiment as it is, and can be embodied by modifying the components without departing from the scope of the invention in the implementation stage. Various inventions can be formed by appropriately combining a plurality of constituent elements disclosed in the embodiments. For example, some components may be deleted from all the components shown in the embodiment. Furthermore, constituent elements over different embodiments may be appropriately combined.

  For example, when the pixel P is defective due to a defect in the switching element 12, the non-overlapping portion 31 or the non-superimposing portion 32 of the defective pixel may be irradiated with laser light to cut the non-overlapping portion. Even in this case, the defective pixel P can be stably repaired.

  When the organic EL element 13 is defective, the non-overlapping portion 33 of the first connection wiring 19c of the pixel P where the defect is generated may be irradiated with laser light to cut the non-overlapping portion 33. Even in this case, the defective pixel P can be stably repaired.

  As shown in FIG. 7, the third connection wiring 25 a of the auxiliary capacitive element 14 may have a non-overlapping portion 34. In this case, the non-overlapping portion 34 is separated from the second auxiliary capacitance electrode 24 and the auxiliary capacitance line 25, and is provided in the first direction d1 with an interval from the other non-superimposing portion 34. Here, the length L4 of the non-overlapping portion 34 in the second direction d2 is 1 μm or more.

  When a defect occurs in the auxiliary capacitance element 14 such as when the first auxiliary capacitance electrode 23 and the second auxiliary capacitance electrode 24 are short-circuited, a laser is applied to the non-overlapping portion 34 of the third connection wiring 25a of the pixel P where the defect is generated. What is necessary is just to irradiate light and cut | disconnect the non-superimposition part 34. FIG.

  Thereby, the current that always flows from the auxiliary capacitance element 14 to the organic EL element 13 can be eliminated, and the current flows only from the switching element 12 to the organic EL element 13. Therefore, the defective pixel P is repaired (pseudo good point) and functions as a normal pixel.

  The inspection process and the repair process may be performed on the array substrate 1 before being bonded to the sealing substrate 2. In this case, the laser beam may be irradiated from either the opposite side of the surface of the array substrate 1 where the pixels P are formed and the surface of the array substrate 1 where the pixels P are formed.

  The present invention is not limited to the method for manufacturing an organic EL display device and the organic EL display device, but can also be applied to a method for manufacturing a liquid crystal display device as a display device and a liquid crystal display device.

The equivalent circuit diagram which shows the pixel of the array board | substrate of the organic electroluminescence display which concerns on embodiment of this invention. FIG. 2 is an enlarged plan view showing a part of the array substrate shown in FIG. 1. FIG. 3 is a cross-sectional view of the organic EL display device taken along line AA in FIG. 2. FIG. 3 is a cross-sectional view of the organic EL display device taken along line BB in FIG. 2. The schematic block diagram which shows the manufacturing apparatus which manufactures the said organic EL display apparatus. Sectional drawing of the organic electroluminescence display which shows the state which has irradiated the laser beam to the non-overlapping part shown in FIG. It is a figure which shows the modification of the said organic electroluminescence display, and is a top view which shows an auxiliary capacitance element.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Array substrate, 2 ... Sealing substrate, 10 ... Glass substrate, 12 ... Switching element, 12a, 12b ... TFT, 13 ... Organic EL element, 14 ... Auxiliary capacitance element, 15 ... Scanning line, 16 ... Gate electrode, 17 DESCRIPTION OF SYMBOLS ... Gate wiring, 18 ... Gate insulating film, 19 ... Semiconductor wiring, 19a, 19b ... Channel layer, 19c ... 1st connection wiring, 21 ... Signal line, 22 ... 2nd connection wiring, 23 ... 1st auxiliary capacity electrode, 24 2nd auxiliary capacitance electrode, 25 ... auxiliary capacitance line, 25a ... third connection wiring, 26 ... cathode, 27 ... partition wall layer, 28 ... organic active layer, 29 ... anode, 31, 32, 33, 34 ... non-overlapping part , 50 ... manufacturing apparatus, d1 ... first direction, d2 ... second direction, P ... pixel, R ... display area, S ... display surface.

Claims (10)

A plurality of wirings and a plurality of conductive parts connected to the wirings are provided on the substrate, and one of the plurality of conductive parts is separated from the other conductive parts and the wirings in one direction. Forming a plurality of pixels including a non-overlapping portion provided at intervals between the other conductive portion and the wiring,
Inspecting the pixel for defects,
When the pixel has a defect, the non-overlapping portion of the pixel having the defect is irradiated with laser light, the non-overlapping portion irradiated with the laser light is cut, and the defective pixel is repaired. A method for manufacturing an array substrate. The plurality of wirings are a plurality of scanning lines, a plurality of signal lines, and a plurality of auxiliary capacitance lines,
Each pixel is connected to the scanning line and the signal line, connected to the switching element, a switching element having a gate electrode and a channel layer, a display element having a first connection wiring connected to the switching element, and the switching element. Second connection wiring, a first auxiliary capacitance electrode connected to the second connection wiring, a second auxiliary capacitance electrode disposed opposite to the first auxiliary capacitance electrode via an insulating film, and the second auxiliary capacitance electrode And an auxiliary capacitance element having a third connection wiring connected to the auxiliary capacitance line,
2. The method of manufacturing an array substrate according to claim 1, wherein when a defect occurs in the switching element of the pixel, the non-overlapping portion of the channel layer of the pixel in which the defect is generated is irradiated with laser light. The plurality of wirings are a plurality of scanning lines, a plurality of signal lines, and a plurality of auxiliary capacitance lines,
Each pixel is connected to the scanning line and the signal line, connected to the switching element, a switching element having a gate electrode and a channel layer, a display element having a first connection wiring connected to the switching element, and the switching element. Second connection wiring, a first auxiliary capacitance electrode connected to the second connection wiring, a second auxiliary capacitance electrode disposed opposite to the first auxiliary capacitance electrode via an insulating film, and the second auxiliary capacitance electrode And an auxiliary capacitance element having a third connection wiring connected to the auxiliary capacitance line,
2. The method of manufacturing an array substrate according to claim 1, wherein when a defect occurs in the switching element of the pixel, the non-overlapping portion of the first connection wiring of the pixel in which the defect is generated is irradiated with laser light. The plurality of wirings are a plurality of scanning lines, a plurality of signal lines, and a plurality of auxiliary capacitance lines,
Each pixel is connected to the scanning line and the signal line, connected to the switching element, a switching element having a gate electrode and a channel layer, a display element having a first connection wiring connected to the switching element, and the switching element. Second connection wiring, a first auxiliary capacitance electrode connected to the second connection wiring, a second auxiliary capacitance electrode disposed opposite to the first auxiliary capacitance electrode via an insulating film, and the second auxiliary capacitance electrode And an auxiliary capacitance element having a third connection wiring connected to the auxiliary capacitance line,
2. The method of manufacturing an array substrate according to claim 1, wherein when a defect occurs in the auxiliary capacitance element of the pixel, the non-overlapping portion of the third connection wiring of the pixel in which the defect is generated is irradiated with laser light. The plurality of wirings are a plurality of scanning lines, a plurality of signal lines, and a plurality of auxiliary capacitance lines,
Each pixel is connected to the scanning line and the signal line, and includes a switching element having a gate electrode and a channel layer, a first connection wiring connected to the switching element, and a first electrode connected to the first connection wiring A display element having a second electrode opposed to the first electrode, a shielding layer sandwiched between the first electrode and the second electrode, a second connection wiring connected to the switching element, the second A first auxiliary capacitance electrode connected to a connection wiring; a second auxiliary capacitance electrode disposed opposite to the first auxiliary capacitance electrode via an insulating film; and the second auxiliary capacitance electrode and the auxiliary capacitance line connected to each other An auxiliary capacitance element having a third connection wiring,
2. The method of manufacturing an array substrate according to claim 1, wherein when a defect occurs in the display element of the pixel, the non-overlapping portion of the first connection wiring of the pixel in which the defect occurs is irradiated with laser light.   The method of manufacturing an array substrate according to claim 1, wherein a length of the non-overlapping portion in a direction perpendicular to the one direction is 1 μm or more. A plurality of wirings and a plurality of conductive parts connected to the wirings are provided on the substrate, and one of the plurality of conductive parts is separated from the other conductive parts and the wirings in one direction. Forming an array substrate comprising a plurality of pixels including non-overlapping portions provided at intervals between the other conductive portions and the wirings;
A counter substrate is disposed opposite to the surface of the array substrate on which the pixels are formed,
Inspecting the pixel for defects,
When the pixel has a defect, the non-overlapping portion of the pixel having the defect is irradiated with laser light, the non-overlapping portion irradiated with the laser light is cut, and the defective pixel is repaired. Manufacturing method of display device.   The method for manufacturing a display device according to claim 7, wherein the laser light is irradiated from a side opposite to a surface of the array substrate on which the pixels are formed. A plurality of wires formed on the substrate;
Formed on the substrate, connected to the wiring, having a plurality of conductive portions, one conductive portion of the plurality of conductive portions being separated from the other conductive portions and the wiring and the other in one direction And a plurality of pixels including a non-overlapping portion provided at intervals between the conductive portion and the wiring. A plurality of wirings formed on the substrate; and a plurality of conductive parts formed on the substrate and connected to the wirings, wherein one conductive part of the plurality of conductive parts includes another conductive part and the conductive part An array substrate including a plurality of pixels that are separated from the wiring and include the other conductive portion in one direction and a non-overlapping portion provided at an interval from the wiring;
A counter substrate disposed opposite to the surface of the array substrate on which the pixels are formed.

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