JP5045581B2 - Inspection method of light emitting device - Google Patents

Description

The present invention relates to a biopsy査方method of emission equipment using an organic EL (Electroluminescence) element.

  In recent years, as a next-generation display device following a liquid crystal display (LCD), a light-emitting element in which self-light-emitting elements such as electroluminescence elements using organic light-emitting materials (hereinafter abbreviated as “organic EL elements”) are two-dimensionally arranged Research and development for full-scale practical application and popularization of light-emitting devices equipped with a display panel of a type are actively conducted. In addition, a configuration using a low molecular organic compound or a high molecular organic compound as a light emitting layer of an organic EL element is known.

  Such an organic EL device includes an anode electrode, a cathode electrode, and an organic EL layer such as an electron injection layer, a hole injection layer, and a light emitting layer formed between these electrodes. In the EL element, light is emitted by energy generated by recombination of holes and electrons respectively supplied from the hole injection layer and the electron injection layer in the light emitting layer.

  By the way, when a foreign substance is mixed into the organic EL layer due to a residue generated in the manufacturing process, there is a problem that the resistance between the anode electrode and the cathode electrode is reduced to generate a leak current, and the organic EL element does not emit light.

Such defects in the organic EL layer can be repaired by irradiating the laser beam and removing the periphery of the foreign matter as disclosed in Patent Document 1, for example, so that the organic EL layer can emit light normally. Is possible.
JP 2007-42498 A

  By the way, when repairing the organic EL layer, it is necessary to accurately adjust the light conditions and the like. In the conventional repair method and repair device using laser light, since the microscope was observed with the naked eye and the focal position of the laser light was manually adjusted, it was difficult to accurately adjust the focal position for each repair.

  In particular, the organic EL layer is an extremely thin layer having a thickness of several tens of nm. Further, in a high-definition light-emitting device, the planar shape of a pixel is as small as a square with a side of several tens of μm. It is particularly difficult to accurately match, and the focus position is slightly shifted, so that there is a problem that the entire organic EL element of the pixel does not emit light and repair is not achieved.

  Accordingly, there is a need for a light emitting device, a light emitting device inspection device, and an inspection method that can easily set the focal position and can more accurately repair defects in the organic EL element.

The present invention has been made in view of the above, and an object thereof is to provide a test査方method of the light emitting equipment can be set the focal position of the light easily.

To achieve the above object, the inspection method of engaging Ru emitting device of the present invention,
A reflective film forming step of forming a reflective film on the substrate;
Placing the substrate on a mounting table;
Irradiating the reflective film with light;
The time from when the first light out of the light exits from the light irradiating unit to the rangefinder, and the second light out of the light exits from the light irradiating unit and is reflected by the reflective film. A measuring step of measuring the return time from the difference in time until it returns to the distance meter;
A distance calculating step of calculating a distance to the reflective film from the return time of the light and the wavelength of the light;
A focus adjusting step of controlling and moving a lens that determines the focal position of the light by a control unit of a driving device that moves the lens so that the focal position of the light is aligned with the position of the reflective film. It is characterized by.

  In the reflective film forming step, the reflective film may be formed on a pixel electrode formed on the substrate.

  In the reflective film forming step, the reflective film may be formed on a light transmissive film formed on the pixel substrate.

A pixel electrode is formed on the substrate , an organic layer is formed on the pixel electrode,
In the reflective film forming step, the reflective film may be formed in the organic layer.

An imaging step of imaging the substrate;
A display step of displaying an image captured by the imaging unit.

According to the present invention, a reflective film on the light-emitting device provided, by measuring the distance to the reflective film, to provide a biopsy査方method of the light emitting equipment can be set the focal position of the light easily Can do.

  A light-emitting device, a light-emitting device inspection apparatus, and an inspection method according to an embodiment of the present invention will be described with reference to the drawings.

  A configuration example of the inspection apparatus (repair apparatus) 100 is shown in FIG. 1, and FIG. 2 is an enlarged view of a part of FIG. Further, FIG. 3 shows a configuration example of the light emitting device 10 to be repaired using the repair device 100, and FIG. 4 shows a driving circuit of each pixel. 5 is a plan view of the pixel 30, and FIG. 6 is a sectional view taken along line VI-VI of the pixel 30 shown in FIG.

  As shown in FIG. 1, the repair device 100 includes a mounting table 101, a microscope 102, a lens driving device 103, a rangefinder 104, an imaging unit 105, a light irradiation unit (laser light irradiation unit) 106, A laser light adjusting unit 107, a control unit 110, and a display unit 111 are provided. In the repair device 100, as will be described in detail later, light (laser light) is irradiated to the reflective film 39b of the reflective portion 39 formed in the organic layer of the light emitting device 10, and from the return time of the laser light to the reflective film 39b. The distance is measured to determine the focal position of the laser beam during repair. Based on this focal position, the defect portion of the organic EL layer is irradiated with laser light to repair the defect.

  The mounting table 101 is a stage for mounting the light emitting device 10, and is controlled by the control unit 110, and slides in the X axis direction and / or the Y axis direction by a driving device (not shown). By moving the mounting table 101 in the X-axis direction and / or the Y-axis direction, it is possible to irradiate laser light to an arbitrary portion of the light emitting device 10.

  The microscope 102 is an apparatus that includes a lens and observes a part of the light emitting device 10 in an enlarged manner. In the present embodiment, the light emitting device 10 is irradiated with laser light through the microscope 102. The lens of the microscope 102 is moved by the lens driving device 103. The lens driving device 103 includes a motor and the like, and is controlled by the control unit 110. In the present embodiment, as will be described in detail later, the lens of the microscope 102 is moved so that the laser beam is focused on the focal position calculated based on the return time of the laser beam.

  The rangefinder 104 is a device that measures the return time of the laser light and calculates the distance from the return time of the laser light and the wavelength of the laser light to the reflective film 39b in the light emitting device 10. The rangefinder 104 includes a start signal detector, a time measurement device, a stop signal detector, a rangefinder control unit, and the like (not shown). When determining the focal position of the laser beam, first, the laser beam emitted from the laser beam irradiation unit 106 is reflected by the reflection mirror as shown in FIG. Lead. At this time, part of the laser light is not reflected by the prism but enters the rangefinder 104. The laser light (first light) incident on the distance meter 104 is detected as a start signal by the start signal detector, and this signal is transmitted to the time measuring device. Further, a part of the laser light reflected by the reflection film 39 b in the light emitting device 10 is reflected by the prism and is incident on the distance meter 104 again, and a part is incident on the imaging unit 105. The laser light (second light) incident on the distance meter 104 again is detected as a stop signal by the stop signal detector, and this stop signal is transmitted to the time measuring device. The time measuring device is the time difference between the start signal and the stop signal, that is, the time until the laser light exits from the light irradiation unit 106 and enters the rangefinder 104, and the laser light exits from the light irradiation unit 106 and is reflected by the reflection film 39b. Then, the return time of the laser light is detected from the difference in time until it returns to the rangefinder 104 again. The rangefinder controller calculates the distance from the time difference and the wavelength of the laser beam to the reflection film 39b. The distance information to the reflection film 39b calculated in this way is transmitted to the control unit 110.

  The image capturing unit 105 is a high-sensitivity CCD (Charge Coupled Device) camera, and image data captured by the image capturing unit 105 via the microscope 102 is transmitted to the control unit 110. This image is transmitted from the control unit 110 to the display unit 111 and displayed on the display unit 111. In this way, by displaying the image captured by the imaging unit 105 on the display unit 111, it is possible to display a defect repairing process, and repair while monitoring is possible.

  The laser beam irradiation unit 106 is a device that irradiates laser light having a predetermined wavelength, and its output is adjusted by a laser beam adjusting unit 107 controlled by the control unit 110.

  The control unit 110 includes a CPU (Central Processing Unit), a RAM (Random Access Memory), a ROM (Read Only Memory), and the like, and includes a mounting table 101, a microscope 102, a lens driving device 103, a rangefinder 104, And the laser light adjusting unit 107. The control unit 110 calculates the focal position of the laser beam based on the position of the reflective film 39b measured by the rangefinder, controls the laser beam adjusting unit, and adjusts the focal position of the irradiated laser beam. Further, based on the position of the reflective film 39b, a lens driving signal is transmitted to the lens driving device 103 so that the position of the reflective film 39b is focused, the lens position of the microscope 102 is moved, and the focal position of the laser light is adjusted. .

  The display unit 111 is a display panel such as a liquid crystal display, and displays an image captured by the imaging unit 105.

  In the repair device 100 of the present embodiment, the distance from the return time of the laser beam to the reflection film 39b is obtained by the rangefinder 104, and the position where the reflection film 39b is formed, that is, the organic layer (hole injection layer and light emitting layer). ) Can be focused on the laser beam. Conventionally, when focusing on the organic layer, the reflected light at the interface between the organic layer and the pixel electrode and the interface between the light emitting layer and the hole injection layer is weak and cannot be separated from the scattered light in the organic layer. It was difficult to focus on the organic layer. However, in this embodiment, the position of the reflective film can be calculated from the return time of the laser light, and the focal position of the laser light is adjusted based on the position of the reflective film, so that the focal position is easily set in the organic layer. Can do. Further, since the focal position of the laser beam is adjusted in this way, it is possible to suppress the destruction of the counter electrode by the laser beam.

  Next, FIG. 2 shows a configuration example of the light emitting device 10 to be repaired using the repair device 100 described above, and FIG. 3 shows a driving circuit of each pixel. 4 is a plan view of the pixel, and FIG. 5 is a cross-sectional view taken along line VV of the pixel.

  In the light emitting device 10 of the present embodiment, as shown in FIG. 3, pixels of three colors of red (R), green (G), and blue (B) are set as one set, and this set is arranged in the row direction (left and right in FIG. 3). A plurality of pixels of the same color are arranged in the column direction (vertical direction in FIG. 3).

  An equivalent circuit showing a configuration example of each pixel 30 is shown in FIG. Each pixel 30 includes an organic EL element 23 and a pixel circuit DS that actively operates the organic EL element 23. The pixel circuit DS includes a transistor (selection transistor) Tr11, a transistor (light emission drive transistor) Tr12, and a capacitor. Cs.

  On the pixel substrate 31, a plurality of anode lines La connected to a plurality of pixel circuits DS arranged in a predetermined row, and a data line Ld connected to a plurality of pixel circuits DS arranged in a predetermined column, respectively. A plurality of scanning lines Ls for selecting the transistors Tr11 of the plurality of pixel circuits DS arranged in a predetermined row are formed.

  As shown in FIG. 4, the selection transistor Tr11 has a gate terminal connected to the scanning line Ls, a drain terminal connected to the data line Ld arranged in the column direction of the light emitting panel, and a source terminal connected to the contact N11. The gate terminal of the light emission drive transistor Tr12 is connected to the contact N11, the drain terminal is connected to the supply voltage line La, and the source terminal is connected to the contact N12. The capacitor Cs is connected to the gate terminal and the source terminal of the transistor Tr12. Note that the capacitor Cs is an auxiliary capacitance additionally provided between the gate and the source of the transistor Tr12 or a capacitance component composed of these parasitic capacitance and auxiliary capacitance. The organic EL element 23 has an anode terminal (pixel electrode 34) connected to the contact N12 and a reference voltage Vss applied to the cathode terminal (counter electrode 40).

  The scanning line Ls is connected to a scanning driver (not shown) arranged at the peripheral edge of the light emitting panel, and sets a plurality of pixels 30 arranged in the row direction of the light emitting panel to a selected state at a predetermined timing. The selection voltage signal (scanning signal) Ssel is applied. The data line Ld is connected to a data driver (not shown) arranged at the peripheral edge of the light emitting panel, and a data voltage (gradation signal) corresponding to display data at a timing synchronized with the selection state of the pixel 30. Vpix is applied.

  A plurality of transistors Tr12 arranged for each row are set to a state in which a light emission driving current corresponding to display data flows through the pixel electrode (for example, an anode electrode) of the organic EL element 23 connected to the transistor Tr12. Each of the anode lines La (supply voltage line) is directly or indirectly connected to a predetermined high potential power source. That is, a predetermined high potential (supply voltage Vdd) that is sufficiently higher than the reference voltage Vss applied to the counter electrode 40 of the organic EL element 23 is applied to the anode line La. The counter electrode 40 is directly or indirectly connected to a predetermined low potential power source, for example, and is a single electrode layer for all the pixels (organic EL elements) arranged two-dimensionally on the insulating substrate 11. And is set so that a predetermined low voltage (reference voltage Vss, for example, ground potential GND) is applied in common.

  Next, the top view of the pixel 30 of the light-emitting device 10 of this embodiment is shown in FIG. 5 is a cross-sectional view taken along line VV shown in FIG. The light emitting device 10 of the present embodiment is a so-called bottom emission type in which light is extracted from the pixel substrate 31 side on which the organic EL element is provided.

  The pixel substrate 31 is formed from a material having translucency, and is, for example, a glass substrate. On the pixel substrate 31, gate electrodes 11g and 12g, a data line Ld, and an insulating film 32 are formed.

  The insulating film 32 is made of an insulating material such as a silicon oxide film or a silicon nitride film, and is formed on the pixel substrate 31 so as to cover the gate electrodes 11g and 12g and the data line Ld. The insulating film 32 functions as a gate insulating film for the transistors Tr11 and Tr12 in the region where the gate electrodes 11g and 12g are formed.

  The transistors Tr11 and Tr12 are each an n-channel thin film transistor (TFT). The transistors Tr11 and Tr12 are formed on the pixel substrate 31, respectively. The transistor Tr11 includes a semiconductor layer (not shown), a protective insulating film (not shown), a gate electrode 11g, a source electrode 11s, a drain electrode 11d, and an ohmic contact layer (not shown). Prepare. Similar to the transistor Tr12, the transistor Tr12 includes a semiconductor layer 121, a protective insulating film 122, a source electrode 12s, a drain electrode 12d, ohmic contact layers 123 and 124, and a gate electrode 12g. The source electrode 12s of Tr12 is connected to the pixel electrode 34.

  In the transistors Tr11 and Tr12, the gate electrodes 11g and 12g are made of, for example, aluminum-neodymium-titanium (AlNdTi) or chromium (Cr). The drain electrodes 11d and 12d and the source electrodes 11s and 11s are made of, for example, aluminum-titanium (AlTi) / Cr, AlNdTi / Cr, or Cr. In addition, an ohmic contact layer is formed between the drain electrode and the source electrode and the semiconductor layer for low resistance contact.

The wiring Ldx is connected to the lower data line Ld through a contact hole 61 which is an opening provided in the insulating film 32.
The scanning line Ls is disconnected in the formation region of the gate electrode 11g of the transistor Tr11 in each pixel 30, and the end thereof is provided below the contact holes 62 and 63 which are openings provided in the insulating film 32. It is connected to the gate electrode 11g.
The source electrode 11s of the transistor Tr11 is connected to the gate electrode 12g of the lower transistor Tr12 through a contact hole 64 which is an opening provided in the insulating film 32.

  The interlayer insulating film 33 is formed from an insulating material such as SiN. The interlayer insulating film 33 is formed between the pixel electrodes 34 and insulates between adjacent pixel electrodes 34. Further, the interlayer insulating film 33 includes an opening 33a in a region corresponding to the light emitting region. Thus, organic layers such as a hole injection layer 36 and a light emitting layer 37 described later are formed on the pixel electrode 34 exposed through the opening 33 a of the interlayer insulating film 33.

  The pixel electrode (anode electrode) 34 is formed on the insulating film 32 and is made of a light-transmitting conductive material such as ITO (Indium Tin Oxide), ZnO, or the like. Each pixel electrode 34 is insulated from the pixel electrode 34 of another adjacent pixel 30 by an interlayer insulating film 33.

  The reflection part 39 has a two-layer structure of a transparent film 39a and a reflection film 39b, and the planar shape is formed in a substantially square shape. In the present embodiment, the reflection portion 39 is formed in the central region of the pixel electrode 34 as shown in FIG. 5, and for example, one side is formed to be several tens of nm. The thickness of the transparent film 39a in the reflecting portion is set so that the reflecting film 39b is near the center of the thickness of the organic layer. Thereby, the position where the laser light is reflected by the reflective film 39b can be set as the center of the thickness of the organic layer. In addition, the area of the reflective portion 39 is set to a value such that the light emission amount of the entire pixel 30 in which the reflective portion 39 is formed is not lower than that of the pixel 30 in which no other reflective portion is formed. Note that the planar shape of the reflecting portion 39 is not limited to a square, and may be a circle, a polygon, or the like.

  Further, one reflecting portion 39 is provided at a predetermined position (coordinates) in one pixel 30 on the pixel substrate 31. Since the reflection unit 39 serves as a reference for the focal position of the laser beam when repairing other pixels 30 on the pixel substrate 31, it is not necessary to be provided in all the pixels 30 on the pixel substrate 31. However, the number of the reflective portions 39 is not limited to one on the pixel substrate 31, and the reflective portions 39 may be provided for a plurality of pixels 30.

  Since the transparent film 39a is irradiated with laser light through the pixel electrode 34 in this embodiment, it is preferable to form the transparent film 39a from a material of the pixel electrode 34, for example, a material having a refractive index similar to that of ITO so that total reflection does not occur. . Specifically, when the pixel electrode 34 is formed from ITO, SiN, ZnO, or the like can be used as the transparent film 39a. Further, the transparent film 39a is formed by a vacuum deposition method or the like through a mask having an opening corresponding to the shape of the transparent film on the pixel electrode 34 before the step of forming the hole injection layer 36 on the pixel electrode 34. Is done.

  Next, the reflective film 39b is formed of a material that reflects laser light, for example, aluminum. The reflective film 39b is formed on the transparent film 39a by a vacuum deposition method or the like through a mask having an opening corresponding to the shape of the reflective film 39b.

  The partition wall 35 is made of an insulating material such as polyimide and is formed on the interlayer insulating film 33. As shown in FIGS. 5 and 6, the partition wall 35 is formed in a lattice shape with grooves 35 a extending in the column direction (vertical direction shown in FIG. 6). In addition, although the cross-sectional shape of the partition wall 35 is formed in a square shape in FIG. 6, it may be a cross-sectional shape having a taper.

  The hole injection layer 36 is formed on the pixel electrode 34 and has a function of supplying holes to the light emitting layer 37. The hole injection layer 36 is made of a material capable of hole injection and transport, for example, a conductive polymer such as polyethylenedioxythiophene (PEDOT) and a dopant polystyrene sulfonic acid (PSS).

  The light emitting layer 37 is formed on the hole injection layer 36. The light emitting layer 37 has a function of generating light by applying a predetermined voltage between the anode electrode and the cathode electrode. The light emitting layer 37 is a known polymer light emitting material capable of emitting light, for example, red (R), green (G), blue (B) containing a conjugated double bond polymer such as polyparaphenylene vinylene or polyfluorene. ) Constructed from colored luminescent materials.

  In the hole injection layer 36 and the light emitting layer 37, which are organic layers, if there are foreign matters generated during the manufacturing process, for example, particles generated when the pixel electrode 34 is formed, the pixel electrode 34 and the cathode electrode 40 The resistance between them decreases, leak current occurs, and the organic EL element does not emit light. Therefore, in the present embodiment, the foreign matter existing in the organic layer is removed by irradiating the laser beam, repair is performed, and the organic EL element can normally emit light.

  The counter electrode (cathode electrode) 40 is made of a conductive material, for example, a material having a low work function, such as Ca or Ba, and is made of a light-reflective conductive material, for example, aluminum, and a layer for supplying electrons to the light emitting layer 37. It has a two-layer structure with a layer having a function of suppressing oxidation of a layer formed from a low material and reducing the overall sheet resistance. As shown in FIG. 6, the counter electrode 40 is composed of a single electrode layer formed across a plurality of pixels 30.

  Next, the manufacturing method of the light-emitting device 10 provided with such a reflection part 39 is demonstrated using FIG.7 and FIG.8.

  First, a pixel substrate 31 made of a glass substrate or the like is prepared. Next, a gate metal layer (not shown) is formed on the pixel substrate 31 by a sputtering method, a vacuum deposition method, or the like, and patterned to form the shapes of the gate electrodes 11g and 12g as shown in FIG. To pattern.

  Subsequently, as shown in FIG. 7B, an insulating film 32 made of, for example, silicon nitride is formed on the gate electrodes 11g and 12g by a CVD (Chemical Vapor Deposition) method or the like. Subsequently, a semiconductor film made of, for example, alpha silicon, and an insulating film made of, for example, silicon nitride, which becomes a protective insulating film, are continuously formed on the insulating film 32 by CVD, sputtering, or the like. Next, a protective insulating film 122 is formed by patterning.

  Next, an impurity layer to be an ohmic contact layer is formed on the semiconductor film and patterned to form ohmic contact layers 123 and 124 and a semiconductor layer 121 as shown in FIG. 7B. Next, as shown in FIG. 7B, the pixel electrode 34 is formed on the insulating film 32 by a vacuum evaporation method, a sputtering method, or the like, using a light-transmitting conductive material such as ITO.

  Next, contact holes 61 to 64 for connecting the gate metal layer to the drain metal layer for forming the source electrode and the drain electrode, and a gate insulating film dividing portion (not shown) are formed. Next, after forming a drain metal layer by vacuum deposition, sputtering, or the like, a source electrode 12s and a drain electrode 12d are formed by patterning as shown in FIG. 7B.

  Next, as shown in FIG. 7C, a light-transmitting material such as SiN, ZnO or the like is formed by a vacuum evaporation method or the like through a mask 81 having an opening 81a having a shape corresponding to the transparent film 39a. A transparent film 39 a is formed on the pixel electrode 34 by film formation.

  Subsequently, as shown in FIG. 7D, a reflective material, for example, Al or the like is formed by vacuum deposition or the like through a mask 82 having an opening 82a having a shape corresponding to the reflective film 39b. A reflective film 39b is formed on the transparent film 39a. Thereby, the reflection part 39 is formed.

  Subsequently, an interlayer insulating film 33 made of a silicon nitride film is formed by a CVD method or the like so as to cover the transistors Tr11, Tr12 and the like. Next, an opening 33a is formed in a region corresponding to the light emitting region of the pixel 30 by photolithography or the like, and the pixel electrode 34 is exposed as shown in FIG.

  Next, photosensitive polyimide or the like is formed on the pixel substrate 31 by spin coating. Subsequently, development is performed after exposure through a photomask formed in a shape corresponding to the partition 35, and patterning is performed to form the partition 35 as shown in FIG. 8B.

  Subsequently, a liquid containing water as a main component (hereinafter referred to as PEDOT-containing liquid) in which a hole injection material (PEDOT as a conductive polymer and PSS as a dopant) is dispersed is used as an inkjet or It is applied on the pixel substrate 31 by a method such as a nozzle coater for flowing a continuous liquid. At this time, the partition 35 partitions the liquid so that it does not leak out of the pixel.

  Next, a light-emitting material-containing liquid obtained by dissolving red, green, and blue light-emitting materials (polyfluorene-based) in an organic solvent such as tetralin, tetramethylbenzene, and mesitylene is used to form the interlayer insulating film 33 by a method such as inkjet or nozzle coater. Films are formed on the hole injection layer 36 surrounded by the opening 33a and the opening of the partition wall 35, respectively. After forming the light emitting material, the residual solvent is removed by heat drying in a nitrogen atmosphere or heat drying in a vacuum.

  Next, a metal layer made of a metal compound selected from alkali metals and alkaline earth metals is formed by, for example, vapor deposition. Further, aluminum is deposited on the metal layer by vapor deposition, and a cathode electrode 40 having a two-layer structure is deposited as shown in FIG.

Next, an ultraviolet curable resin or a thermosetting resin is applied to each predetermined region on a sealing substrate (not shown) using a dispenser in an inert gas atmosphere or by screen printing. Note that a sealing resin may be applied to the pixel substrate side. Next, the pixel substrate 31 and the sealing substrate are overlapped and brought into close contact with pressure, and the pressure is gradually returned to normal pressure. After returning to normal pressure, UV irradiation or heat is applied to cure the resin and complete sealing.
From the above steps, the light emitting device 10 having the reflecting portion 39 is manufactured.

  Next, a process of repairing a defect in the pixel 30 of the light emitting device 10 using the repair device 100 shown in FIG. 1 will be described with reference to a flowchart shown in FIG.

  The sealed light emitting device 10 is placed on the mounting table 101 of the repair device 100 through the above-described steps. At this time, the laser beam is placed so that the surface on which the laser light is incident, that is, the pixel substrate 31 side in this embodiment is on the upper side.

  Next, since the reflection unit 39 is formed on a predetermined coordinate on the pixel substrate 31, the control unit 110 moves the mounting table 101 so that the coordinate matches the irradiation position of the laser beam. Alignment is performed (step S11).

  After the alignment, the control unit 110 controls the laser beam adjusting unit 107 to irradiate the reflection film 39b of the reflection unit 39 from the laser beam irradiation unit 106 through the microscope 102. The laser beam at this time is a laser beam having the same wavelength as that of the laser beam used for defect repair and weaker energy than that at the time of repair. The laser light emitted from the laser light irradiation unit 106 is reflected by the reflection mirror as shown in FIG. 2 and further reflected by the prism, thereby being guided to the light emitting device 10. At this time, part of the laser light is not reflected by the prism but enters the rangefinder 104. The laser light incident on the distance meter 104 is detected as a start signal by the start signal detector, and this signal is transmitted to the time measuring device. Further, a part of the laser light reflected by the reflection film 39 b in the light emitting device 10 is reflected by the prism and is incident on the distance meter 104 again, and a part is incident on the imaging unit 105. The laser light incident on the distance meter 104 again is detected as a stop signal by the stop signal detector, and this stop signal is transmitted to the time measuring device. The time measuring device detects a time difference between the start signal and the stop signal. The rangefinder controller calculates the distance from the time difference and the wavelength of the laser beam to the reflection film 39b (step S12).

  Next, the control unit 110 transmits a lens driving signal to the lens driving unit so as to move the lens in the microscope 102 so that the focal position of the laser light matches the calculated distance to the reflection film 39b. (Step S13).

  Subsequently, the control unit 110 moves the mounting table 101 so that the coordinates of the place where the defect exists in the pixel substrate 31 matches the irradiation position of the laser light (Step S14).

  The control unit 110 controls the laser beam adjusting unit 107, irradiates the laser beam from the laser beam irradiation unit 106, and repairs the defect in the pixel 30 (step S15).

  From the above process, the defect in the pixel 30 is repaired.

  In addition, the defect of an organic EL element is discovered by applying a voltage to an organic EL element and measuring a current-voltage characteristic. The defect of the element may be detected in advance by a device provided separately from the repair device 100 and the coordinates of the position of the defect may be recorded, and repaired by the repair device 100 based on the recorded coordinates. In this case, for example, after the alignment in S11 and the measurement of the depth of the reflection film 39b in S12, the operations in Steps S13 to S15 can be repeated. It is also possible to provide a device capable of measuring current-voltage characteristics in the repair device 100 to simultaneously detect and repair defects.

  As described above, in the light emitting device, the light emitting device repair device, and the repair method according to the present embodiment, the reflective portion 39 having the reflective film 39b is formed on the pixel electrode 34, and the reflective film 39b is irradiated with the laser light. By measuring the return time, the position of the reflective film 39b, that is, the center position of the thickness of the organic layer can be calculated. Further, the lens is moved by the control unit so that the focal position of the laser beam used for repairing the defect is aligned with the center position. Accordingly, it is possible to provide a light emitting device, a light emitting device repair device, and a repair method in which the focal position can be easily set. Furthermore, since the focal position of the laser can be adjusted more accurately than when the focal position is determined with the naked eye, damage to the cathode electrode 40 during repair can be suppressed.

  For example, when the focus position is set by performing microscopic observation with the naked eye as in the past, when focusing on the organic layer, reflection at the interface between the organic layer and the pixel electrode, and at the interface between the light emitting layer and the hole injection layer Since the light is weak and cannot be separated from the scattered light in the organic layer, it is difficult to focus on the organic layer accurately. As an example, as a result of repairing a light emitting device in which a pixel of 20 μm square is formed as in the past, there have been many failed examples in which the light emitting function in the pixel is lost. This is partly because the focal position shifts from the organic layer due to the resolution limit of the high-power lens necessary for observation of a high-definition panel. Further, in this example, there are problems of reproducibility such as a difference in laser processing size for each measurement and a repair success / failure due to the above-mentioned resolution limit and focus alignment with the naked eye.

  On the other hand, in the present embodiment, the focal position of the laser beam can be set at the center of the thickness of the organic layer using the reflective film 39b as described above. For this reason, not only the setting of the focal position is easy, but also the focal position of the laser beam is accurately determined, so that the shift of the repair range due to the laser beam is suppressed, and the reproducibility of the repair can be improved. .

  Further, in the present embodiment, it is possible to perform repair while monitoring by photographing with the imaging unit 105 via the microscope 102 and displaying on the display unit 111. From this point, the repair accuracy can be improved.

The present invention is not limited to the above-described embodiments, and various modifications and applications are possible.
In the embodiment described above, the case where the reflecting portion 39 has a two-layer structure of the transparent film 39a and the reflecting film 39b has been described as an example, but the present invention is not limited thereto. For example, as shown in FIG. 10, the reflection part may be only the reflection film 39b. In this case, the center region of the light emitting layer 37 calculates the distance to the reflective film 39b in the same manner as in the above-described embodiment, and corrects the thickness of the hole injection layer 36 and the light emitting layer 37, for example. Align the focal point of the light.

  In addition, the reflecting portion 39 is not limited to being formed in the central region of the light emitting region defined by the opening 33a of the pixel 30, but may be formed in the peripheral region of the light emitting region, and can be formed in any place. It is.

  Further, for example, as shown in FIG. 11, the reflective portion 39 may be formed at the peripheral portion of the pixel electrode 34, and the interlayer insulating film 33 may be formed on the reflective portion 39.

  In the above-described embodiment, a full-color bottom emission organic EL element that emits three colors of RGB has been described as an example. However, the present invention is not limited to this, and any one of RGB monocolors may be used. In addition, a top emission type organic EL element may be used.

  Furthermore, in the above-described embodiment, the driving circuit DS of the pixel 30 has been described by taking a configuration including two transistors as an example. However, the configuration is not limited to this, and the driving circuit DS may be driven by three or more transistors. May be. The transistors Tr11 and Tr12 shown in FIG. 4 are both n-channel amorphous silicon thin film transistors. However, the present invention is not limited to this, and at least one of them may be a p-channel type or a polysilicon thin film transistor. Note that in the case where the transistor Tr11 and the transistor Tr12 are p-channel field effect transistors, the source terminal and the drain terminal are connected in the opposite manner to that in FIG.

It is a figure which shows the structural example of the repair apparatus which concerns on embodiment. It is a figure which expands and shows a part of repair apparatus. It is a figure which shows the structural example of a light-emitting device. It is an equivalent circuit diagram of a pixel of the light emitting device. It is a top view of the pixel of a light-emitting device. FIG. 6 is a sectional view taken along line VI-VI shown in FIG. 5. It is a figure which shows the manufacturing method of a light-emitting device. It is a figure which shows the manufacturing method of a light-emitting device. It is a flowchart of a repair process. It is a figure which shows a modification. It is a figure which shows a modification.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 10 ... Light emitting device, 30 ... Pixel, 31 ... Pixel substrate, 32 ... Insulating film, 33 ... Interlayer insulating film, 34 ... Pixel electrode, 35 ... Partition, 36 ..Hole transport layer, 37... Luminescent layer, 38... Electron injection layer, 39... Reflective part, 40 .. counter electrode, 100 .. repair device, 101. DESCRIPTION OF SYMBOLS 102 ... Microscope, 103 ... Lens drive device, 104 ... Distance meter, 105 ... Imaging part, 106 ... Laser beam irradiation part, 107 ... Laser beam adjustment part, 110 ... Control unit 111: Display unit Cs: Capacitor La ... Anode line Ld ... Data line Ls ... Select line Tr11, Tr12 ... Transistor

Claims (5)

A reflective film forming step of forming a reflective film on the substrate;
Placing the substrate on a mounting table;
Irradiating the reflective film with light;
The time from when the first light out of the light exits from the light irradiating unit to the rangefinder, and the second light out of the light exits from the light irradiating unit and is reflected by the reflective film. A measuring step of measuring the return time from the difference in time until it returns to the distance meter;
A distance calculating step of calculating a distance to the reflective film from the return time of the light and the wavelength of the light;
A focus adjusting step of controlling and moving a lens that determines the focal position of the light by a control unit of a driving device that moves the lens so that the focal position of the light is aligned with the position of the reflective film. A method for inspecting a light-emitting device. The method for inspecting a light-emitting device according to claim 1 , wherein in the reflective film forming step, the reflective film is formed on a pixel electrode formed on the substrate. Wherein the reflective film forming step, the inspection method of a light-emitting device according to claim 1 or 2, characterized in that forming the reflective film on a transparent film having translucency that is formed on the substrate. A pixel electrode is formed on the substrate , an organic layer is formed on the pixel electrode,
Wherein the reflective film forming step, the inspection method of a light emitting device of the light emitting device according to any one of claims 1 to 3, characterized by forming the reflective film on the organic layer. An imaging step of imaging the substrate;
Inspection method of a light-emitting device according to any one of claims 1 to 4, further comprising a display step of displaying an image captured by the imaging unit.

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