JP2014086236A - Light-emitting device, and electronic apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a light-emitting device capable of repairing light emission defects caused by coating unevenness of a function layer and entry of foreign matters in a light-emitting element and the like, on appearance, and to provide an electronic apparatus having the light-emitting device.SOLUTION: A pixel electrode 31 provided on a light-transmissive substrate is divided into a first pixel electrode 31a placed on an outer peripheral side of the pixel electrode 31, and a second pixel electrode 31b placed inside a region surrounded with the first pixel electrode 31a. First connection wiring 61 provided between connection wiring 55 connected to a drain of a driving transistor 23 and the first pixel electrode 31a, and second connection wiring 64 provided between the connection wiring 55 and the second pixel electrode 31b, are provided. At least a part of the first connection wiring 61 and at least a part of the second connection wiring 64 are not shielded for the purpose of allowing light incoming from the substrate side to arrive at there. Accordingly, the part of the first connection wiring 61 or the part of the second connection wiring 64 can be cut by being irradiated with laser light.

Description

  The present invention relates to a light-emitting device and an electronic device each including a light-emitting element in a pixel.

In recent years, a self-luminous display device has attracted attention as compared with a light-receiving display device such as a liquid crystal device. Among them, as a light emitting device provided with an organic electroluminescence (EL) element for each pixel as being thinner, smaller, and more power-saving than a liquid crystal device, a medium-sized product is adopted for a smartphone or the like. In addition, development of large products is progressing, and it is expected to be used in flat-screen TVs.
On the other hand, it goes without saying that a high yield in the manufacturing process must be realized in order to realize a stable product supply. However, in the process of forming the organic EL element, if a foreign substance or the like is mixed into the organic EL element, the light emitting function is partially lowered to cause a point defect. In addition, when a pixel including an organic EL element that is electrically short-circuited due to a foreign object is generated, a current flows intensively to the short-circuited pixel, so that it is difficult for the current to flow to the organic EL element of another pixel. It could affect the whole.

Therefore, as a means for substantially avoiding defects caused by these foreign substances without being defective, for example, Patent Document 1 discloses that a pixel electrode as an anode is divided into a plurality of planes, and each of the divided pixel electrodes is divided into two. An active matrix display device having a wiring electrically connected to one drive transistor is disclosed. Further, for example, Patent Document 2 discloses an organic EL display in which subelements having a plurality of light emitting functions are formed in one pixel, and a current interrupting unit is provided for each subelement.
According to Patent Document 1 and Patent Document 2 described above, a defect occurs by irradiating a laser beam to a portion of a wiring connected to a pixel electrode in which a defect caused by a foreign substance has occurred, or the current interrupting part, and cutting. It is possible to repair the pixel.

JP 2008-65200 A JP 2009-76348 A

An organic EL element has a functional layer including a light emitting layer between an anode and a cathode. As a method for forming the functional layer, a vapor phase process such as vacuum deposition, a liquid phase process such as a coating method, or a combination thereof. Formation methods have been developed.
According to Patent Document 1 and Patent Document 2, sub-light-emitting elements or sub-elements are formed by dividing pixels evenly in a plane. Therefore, there has been a problem that the pixel repair structure is not compatible with defects such as coating unevenness seen in the liquid phase process. In other words, there is a demand for a pixel structure that can repair a pixel regardless of the formation process of the functional layer.

  SUMMARY An advantage of some aspects of the invention is to solve at least a part of the problems described above, and the invention can be implemented as the following forms or application examples.

  Application Example 1 A light-emitting device according to this application example includes a transistor provided on a light-transmitting substrate, a power supply line electrically connected to one of a source or a drain of the transistor, the source or A pixel electrode electrically connected to the other of the drains; a counter electrode disposed opposite to the pixel electrode; and at least one layer formed by a coating method between the pixel electrode and the counter electrode. A light emitting element having a functional layer including a light emitting layer, and the pixel electrode is disposed inside a region surrounded by a first pixel electrode disposed on an outer peripheral side of the pixel electrode and the first pixel electrode. A first connection wiring provided between the other of the source or the drain and the first pixel electrode, and the other of the source or the drain and the second Pixel And at least a part of the first connection wiring and at least a part of the second connection wiring reach the light incident from the substrate side. Thus, it is not shielded from light.

  According to this application example, by irradiating a part of the first connection wiring or the second connection wiring with laser light and cutting it, the first pixel electrode or the second pixel electrode is electrically connected. Can be isolated. Therefore, even if foreign matter that does not emit light normally or uneven application of the functional layer occurs in the region where the first pixel electrode or the second pixel electrode is provided, either the first pixel electrode or the second pixel electrode By electrically isolating these, light emission in the light emitting element can be brought close to a normal state. In addition, the first pixel electrode is disposed on the outer peripheral side of the pixel electrode, and the second pixel electrode is disposed in a region surrounded by the first pixel electrode. Therefore, when at least one of the functional layers is formed by a coating method, uneven application of the functional layer is likely to occur on the outer peripheral side where the first pixel electrode is provided. A light-emitting device including a light-emitting element that can electrically repair a defect that has occurred can be provided.

Application Example 2 In the light emitting device according to the application example described above, the light emitting device includes a first insulating layer that overlaps with an outer edge of the first pixel electrode and forms an opening on the pixel electrode. It is preferable that the wiring and the second connection wiring are covered with the first insulating layer.
According to this configuration, even if a part of the first connection wiring or the second connection wiring is irradiated with laser light, the first connection wiring and the second connection wiring are covered with the first insulating layer. Therefore, damage to the functional layer due to laser light can be prevented.

Application Example 3 In the light emitting device according to the application example, the first insulating layer is formed on the lower insulating layer made of an inorganic insulating material and in contact with the first pixel electrode, and on the lower insulating layer. And an upper insulating layer made of an organic insulating material.
According to this configuration, damage to the functional layer due to laser light can be prevented more reliably. In addition, the lower insulating layer and the upper insulating layer can be combined to function as partition walls for partitioning the pixel electrode, and at least one of the functional layers can be selectively formed by a coating method in a region surrounded by the partition walls. . Thereby, for example, it is possible to separately coat the light emitting layers from which different emission colors can be obtained.

Application Example 4 In the light emitting device according to the application example, the light emitting device includes a second insulating layer that fills a gap between the first pixel electrode and the second pixel electrode in a region surrounded by the first pixel electrode. preferable.
According to this configuration, when the functional layer is formed so as to be in contact with the first pixel electrode and the second pixel electrode, the gap between the first pixel electrode and the second pixel electrode is filled with the second insulating layer. Compared with the case where the second insulating layer is not provided, it is possible to realize the uniformity of the thickness of the functional layer on the pixel electrode and the stable film shape. In particular, it is effective to provide the second insulating layer when at least one of the functional layers is formed by a coating method.

Application Example 5 In the light emitting device according to the application example described above, it is preferable that the functional layer includes a hole injection layer having an electric resistance of 10 kΩ · cm to less than 100 kΩ · cm.
According to this configuration, the hole injection layer in the functional layer is first formed so as to be in contact with the pixel electrode. Therefore, when the electrical resistance of the hole injection layer is less than 10 kΩ · cm, the electrical resistance between the first pixel electrode and the second pixel electrode becomes small, and the first connection wiring or the second connection wiring Even if is cut, the first pixel electrode or the second pixel electrode cannot be electrically isolated. That is, it becomes difficult to obtain the repair effect of the light emitting element in the present invention. In addition, when the electrical resistance of the hole injection layer is 100 kΩ · cm or more, the electrical insulation becomes high, so that the movement of carriers (holes) becomes difficult, and the light emission efficiency may be lowered. Therefore, by setting the electric resistance of the hole injection layer to 10 kΩ · cm or more and less than 100 kΩ · cm, a light emitting device capable of surely repairing the light emitting element can be provided.

Application Example 6 In the light emitting device according to the application example, the pixel electrode includes a third pixel electrode disposed inside a region surrounded by the first pixel electrode, and the other of the source or the drain and It has a third connection wiring provided between the third pixel electrode and at least a part of the third connection wiring is not shielded so that light incident from the substrate side can reach. preferable.
According to this configuration, since the pixel electrode is divided into three, a light-emitting device capable of more effectively repairing a defect caused by foreign matter on the light-emitting element or uneven application of the functional layer is more effective than when the pixel electrode is divided into two. Can be provided.

Application Example 7 An electronic apparatus according to this application example includes the light-emitting device described in the application example.
According to this application example, it is possible to provide an electronic device with excellent cost performance.

FIG. 2A is an equivalent circuit diagram illustrating an electrical configuration of the light emitting device according to the first embodiment, and FIG. 2B is a circuit diagram illustrating an electrical configuration of a sub-pixel. FIG. 3 is a schematic plan view showing the arrangement of subpixels in the light emitting device according to the first embodiment. FIG. 2 is a schematic plan view showing a configuration of subpixels. (A) is a schematic sectional drawing along the A-A 'line of FIG. 3, (b) is a schematic sectional drawing along the C-C' line of FIG. (A)-(e) is a schematic sectional drawing which shows the manufacturing method of an organic EL element. (A) is a schematic plan view which shows an example of the coating nonuniformity of a functional layer, (b) And (c) is a schematic sectional drawing which shows the restoration | repair method of the organic EL element using a laser beam. The schematic plan view which shows the structure of the sub pixel in the light-emitting device of 2nd Embodiment. The schematic plan view which shows the structure of the sub pixel in the light-emitting device of 3rd Embodiment. FIG. 5A is a schematic diagram illustrating a notebook personal computer that is an example of an electronic device, and FIG. 5B is a schematic diagram illustrating a flat-screen television (TV) that is an example of the electronic device. FIG. 6 is a schematic cross-sectional view illustrating a structure of a subpixel of a light emitting device according to a modification.

  DESCRIPTION OF EXEMPLARY EMBODIMENTS Hereinafter, embodiments of the invention will be described with reference to the drawings. Note that the drawings to be used are appropriately enlarged or reduced so that the part to be described can be recognized.

  In the following embodiments, for example, when “on the substrate” is described, the substrate is disposed so as to be in contact with the substrate, or is disposed on the substrate via another component, or the substrate. It is assumed that a part is arranged so as to be in contact with each other and a part is arranged via another component.

(First embodiment)
<Light emitting device>
The light-emitting device of this embodiment is demonstrated with reference to FIGS. 1A is an equivalent circuit diagram showing the electrical configuration of the light emitting device of the first embodiment, FIG. 1B is a circuit diagram showing the electrical configuration of the sub-pixels, and FIG. 2 is a diagram of the first embodiment. 3 is a schematic plan view showing the arrangement of sub-pixels in the light-emitting device, FIG. 3 is a schematic plan view showing the configuration of the sub-pixels, FIG. 4A is a schematic cross-sectional view taken along the line AA ′ in FIG. b) is a schematic sectional view taken along the line CC ′ of FIG.

  As shown in FIG. 1A, the light emitting device 100 of the present embodiment intersects with each of the plurality of scanning lines 12 arranged in parallel to each other and the plurality of scanning lines 12, and is arranged in parallel with each other. A plurality of data lines 13 and a plurality of power supply lines 14. In addition, it has a plurality of sub-pixels 18 arranged corresponding to each intersection of the plurality of scanning lines 12 and the plurality of data lines 13. Further, the scanning line driving circuit 16 is connected to a plurality of scanning lines 12 and the data line driving circuit 15 is connected to a plurality of data lines 13. The plurality of power supply lines 14 are combined into one and given a predetermined potential from an external drive circuit. The light emitting device 100 may include an inspection circuit capable of inspecting the functions of these signal lines and subpixels 18.

  As shown in FIG. 1B, the sub-pixel 18 is connected to an organic electroluminescence (EL) element 30 as a light emitting element, a scanning line 12, a data line 13, and a power supply line 14. And a pixel circuit 20 that performs general control.

  The organic EL element 30 includes a pixel electrode 31 that functions as an anode, a counter electrode 33 that functions as a cathode, and a functional layer 32 that is provided between the pixel electrode 31 and the counter electrode 33 and includes a light emitting layer made of an organic compound. It is comprised by. Although a detailed configuration of the organic EL element 30 will be described later, in the present embodiment, the pixel electrode 31 is divided into a first pixel electrode 31a and a second pixel electrode 31b.

  The pixel circuit 20 includes a switching transistor 21, a storage capacitor 22, and a driving transistor 23. The two transistors 21 and 23 can be configured using, for example, an n-channel or p-channel thin film transistor (TFT) or a MOS transistor.

The gate of the switching transistor 21 is connected to the scanning line 12, one of the source or drain is connected to the data line 13, and the other of the source or drain is connected to the gate of the driving transistor 23.
One of the source and drain of the driving transistor 23 is connected to the pixel electrode 31 (first pixel electrode 31 a and second pixel electrode 31 b) of the organic EL element 30, and the other of the source and drain is connected to the power supply line 14. ing. A storage capacitor 22 is connected between the gate of the driving transistor 23 and the power supply line 14.

When the scanning line 12 is driven and the switching transistor 21 is turned on, the potential based on the image signal supplied from the data line 13 at that time is held in the storage capacitor 22 via the switching transistor 21. The on / off state of the driving transistor 23 is determined according to the potential of the storage capacitor 22, that is, the gate potential of the driving transistor 23. When the driving transistor 23 is turned on, a current corresponding to the gate potential flows from the power supply line 14 to the functional layer 32 sandwiched between the pixel electrode 31 and the counter electrode 33 via the driving transistor 23. The organic EL element 30 emits light according to the amount of current flowing through the functional layer 32.
Note that the configuration of the pixel circuit 20 is not limited to this. For example, a light emission controlling transistor that controls conduction between the driving transistor 23 and the pixel electrode 31 may be provided between the driving transistor 23 and the pixel electrode 31.

  As shown in FIG. 2, the light emitting device 100 includes an element substrate 10. The sub-pixels 18 described above are arranged in a matrix in the display area E1 of the element substrate 10. The plurality of sub-pixels 18 are roughly classified into a sub-pixel 18R that can emit red light, a sub-pixel 18G that can emit green light, and a sub-pixel 18B that can emit blue light. The shape of the sub-pixel 18 is a substantially rectangular shape, and the plurality of sub-pixels 18 are such that the sub-pixels 18 that can emit light of the same color are arranged in the longitudinal direction of the sub-pixels 18 and intersect (orthogonal) with respect to the longitudinal direction. This is a so-called stripe arrangement in which sub-pixels 18 capable of emitting light of different colors in the hand direction are arranged. One pixel 19 is constituted by three sub-pixels 18R, 18G, and 18B that can emit light of different colors, and full-color display is possible. Hereinafter, the short direction of the sub-pixel 18 will be described as the X direction, and the long direction will be described as the Y direction. The “substantially rectangular shape” is an expression including a rectangle, a rectangle whose corners are rounded, a rectangle whose short side is an arc, and a portion whose sides are deformed.

  A non-display area E2 is provided between the outer edge of the element substrate 10 and the display area E1, and the data line driving circuit 15, the scanning line driving circuit 16, an inspection circuit, and the like described above are provided in the non-display area E2. .

  Next, the arrangement of each component in the sub-pixel 18 will be described with reference to FIG. In the present embodiment, the two transistors 21 and 23 constituting the pixel circuit 20 are described as thin film transistors (TFTs) formed on the element substrate 10. As described above, the present invention is not limited to the TFT.

As shown in FIG. 3, the sub-pixel 18 is provided in a region partitioned by the scanning line 12, the data line 13, and the power supply line 14.
The semiconductor layer 21 a of the switching transistor 21 has a substantially rectangular shape in plan view, and is disposed in the vicinity of the data line 13 along the scanning line 12. The semiconductor layer 23a of the driving transistor 23 is also substantially rectangular in plan view, and is arranged in the vicinity of the power supply line 14 so that the longitudinal direction is along the X direction. In the Y direction, the storage capacitor 22 is disposed between the semiconductor layer 21 a of the switching transistor 21 and the semiconductor layer 23 a of the driving transistor 23.

  Each of the semiconductor layers 21a and 23a is made of, for example, polycrystalline silicon, and has a source region, a drain region, and a channel region sandwiched between the source region and the drain region, which are formed by implanting impurities. Hereinafter, in order to simplify the description, in the longitudinal direction (X direction) of the semiconductor layer 21a, the left side close to the data line 13 is a source region, and the right side is a drain region. In the longitudinal direction (X direction) of the semiconductor layer 23a, the right side close to the power supply line 14 is a source region, and the left side is a drain region.

  The gate electrode 21g disposed so as to overlap with the channel region of the semiconductor layer 21a extends in the Y direction to a position overlapping with the scanning line 12, and is switched by a contact hole 41 provided in a portion overlapping with the scanning line 12. The gate electrode 21g of the transistor 21 and the scanning line 12 are electrically connected. A connection wiring 44 is arranged from the source region of the semiconductor layer 21 a toward the data line 13, and the source of the switching transistor 21 and the data line 13 are electrically connected by contact holes 42 and 45 provided at both ends of the connection wiring 44. It is connected to the.

The storage capacitor 22 has a dielectric layer between a pair of electrodes 22a and 22b. The pair of electrodes 22a and 22b has a substantially rectangular shape in plan view, and is arranged such that the longitudinal direction extends in the X direction. Of the pair of electrodes 22a and 22b, the one located on the near side in FIG. 3 is referred to as the upper electrode 22a, and the one located behind is referred to as the lower electrode 22b.
The upper electrode 22a has projecting portions 22c and 22d extending in the Y direction from the opposing long sides. The protruding portion 22c overlaps with the drain region of the semiconductor layer 21a, and the upper electrode 22a is electrically connected to the drain of the switching transistor 21 through a contact hole 43 provided at the end thereof. The protruding portion 22 d overlaps with the channel region of the semiconductor layer 23 a and functions as the gate electrode 23 g of the driving transistor 23.
A connection wiring 46 is provided from the corner of the lower electrode 22 b toward the power supply line 14, and the lower electrode 22 b and the power supply line 14 are electrically connected by contact holes 47 and 48 provided at both ends of the connection wiring 46. It is connected.

A connection wiring 53 is provided from the source region of the semiconductor layer 23 a toward the power supply line 14, and the source of the driving transistor 23 and the power supply line 14 are connected by contact holes 52 and 54 provided at both ends of the connection wiring 53. Electrically connected.
A connection wiring 55 bent from the drain region of the semiconductor layer 23 a toward the data line 13 along the data line 13 is provided. The connection wiring 55 is electrically connected to the drain of the driving transistor 23 through a contact hole 51 provided in a portion overlapping with the drain region.

  A pixel electrode 31 is disposed between the data line 13 and the power supply line 14 in the X direction, which is a region below the driving transistor 23 in the Y direction. The pixel electrode 31 has a substantially rectangular shape that is long in the Y direction, and a first pixel electrode 31a disposed on the outer peripheral side of the pixel electrode 31 and a first electrode disposed on the inner side of a region surrounded by the first pixel electrode 31a. It is composed of two pixel electrodes 31b.

A first connection wiring 61 extending in the X direction from the left side of the first pixel electrode 31 a toward the connection wiring 55 is provided, and contact holes 62 and 63 provided at both ends of the first connection wiring 61. Thus, the first pixel electrode 31a and the connection wiring 55 are electrically connected.
A part of the left side portion of the first pixel electrode 31a is notched, and a protruding portion of the second pixel electrode 31b is provided in the notched portion. A second connection wiring 64 extending in the X direction from the protruding portion toward the connection wiring 55 is provided, and the second pixel electrode 31b is formed by contact holes 65 and 66 provided at both ends of the second connection wiring 64. And the connection wiring 55 are electrically connected. Thus, the first pixel electrode 31 a is electrically connected to the drain of the driving transistor 23 via the first connection wiring 61 and the connection wiring 55. Similarly, the second pixel electrode 31 b is electrically connected to the drain of the driving transistor 23 via the second connection wiring 64 and the connection wiring 55.

  An insulating layer 27 is formed on the pixel electrode 31 so as to form an opening 27 a while overlapping the outer edge of the first pixel electrode 31 a to cover the first connection wiring 61 and the second connection wiring 64. The insulating layer 27 is formed so as to cover various signal lines and the pixel circuit 20.

Next, the structure of the sub-pixel 18 in the light emitting device 100 will be described with reference to FIGS.
As illustrated in FIG. 4A, the light emitting device 100 seals the pixel circuit 20 such as the driving transistor 23, the organic EL element 30 having the functional layer 32, and the organic EL element 30 on the base material 11. The element substrate 10 including the sealing layer 34 is included. In addition, a counter substrate 40 having a light shielding portion 36 and a color filter 37 is provided on a base material 38. The element substrate 10 and the counter substrate 40 are disposed to be opposed to each other via the transparent resin layer 35 and bonded thereto.

  The substrate 11 of the element substrate 10 uses a substrate such as transparent glass. In this embodiment, the base material 11 is transparent alkali-free glass. A base insulating film 11 a made of, for example, silicon oxide is formed so as to cover the surface of the base material 11. First, the semiconductor layer 21a (not shown) of the switching transistor 21 and the semiconductor layer 23a of the driving transistor 23 are formed on the base insulating film 11a. Thereafter, the data line 13 and the power line 14 are formed. As described above, the semiconductor layers 21a and 23a are formed using, for example, polycrystalline silicon. The data line 13 and the power line 14 can also be formed, for example, by forming and patterning polycrystalline silicon having conductivity.

  A gate insulating film 11b made of, for example, silicon oxide is formed so as to cover the semiconductor layer 23a, the data line 13, and the power supply line 14. A gate electrode 23g is formed on the gate insulating film 11b at a position overlapping the channel region of the semiconductor layer 23a. As described above, the gate electrode 23g is formed as a part of the upper electrode 22a of the storage capacitor 22. Although not shown in FIG. 4A, the scanning line 12 and the lower electrode 22b of the storage capacitor 22 are also formed on the substrate 11 in the same manner.

  A first interlayer insulating film 24 made of, for example, silicon oxide is formed so as to cover the gate electrode 23g. The first interlayer insulating film 24 is subjected to a flattening process such as a CMP process so as to flatten the surface of the first interlayer insulating film 24 in order to alleviate the unevenness caused by the formation of various signal lines and pixel circuits 20.

  Contact holes 51, 52, and 54 are formed so as to penetrate the first interlayer insulating film 24 and the gate insulating film 11b and reach the drain region, the source region, and the power supply line 14 of the semiconductor layer 23a.

  A conductive film made of, for example, aluminum or an alloy of aluminum is formed so as to cover the surface of the first interlayer insulating film 24 and fill the contact holes 51, 52, and 54. Wirings 53 and 55 are formed. The connection wiring 53 is electrically connected to the source region of the semiconductor layer 23 a and the power supply line 14 by the conductive film filling the contact holes 52 and 54. One end of the connection wiring 55 is electrically connected to the drain region of the semiconductor layer 23 a by the conductive film filling the contact hole 51.

  A second interlayer insulating film 25 made of, for example, silicon oxide is formed so as to cover the connection wirings 53 and 55. A contact hole 62 that penetrates through the second interlayer insulating film 25 and reaches the other end of the connection wiring 55 is formed. Although not shown in FIG. 4A, the contact hole 65 of FIG. 3 is also formed so as to penetrate the second interlayer insulating film 25 and reach the connection wiring 55.

  A conductive film made of, for example, aluminum or an aluminum alloy is formed so as to cover the second interlayer insulating film 25 and fill the contact holes 62 and 65, and the conductive film is patterned to form the reflective layer 60, the first Connection wiring 61 is formed. Although not shown in FIG. 4A, the second connection wiring 64 is formed simultaneously with the first connection wiring 61. The first connection wiring 61 is electrically connected to the connection wiring 55 by a conductive film filling the contact hole 62. Similarly, the second connection wiring 64 is also electrically connected to the connection wiring 55 by a conductive film filling the contact hole 65.

  The first connection wiring 61 and the second connection wiring 64 are shielded from light since they do not overlap with other connection wirings and signal lines when viewed from the base material 11 side except for portions overlapping the contact holes 62 and 65. Absent. As will be described in detail later, the first connection wiring 61 and the second connection wiring 64 can be cut by irradiating laser light from the substrate 11 side.

  A third interlayer insulating film 26 made of, for example, silicon oxide is formed so as to cover the reflective layer 60, the first connection wiring 61, and the second connection wiring 64. A contact hole 63 that penetrates through the third interlayer insulating film 26 and reaches the first connection wiring 61 is formed. Although not shown in FIG. 4A, a contact hole 66 that penetrates through the third interlayer insulating film 26 and reaches the second connection wiring 64 is also formed.

  A transparent conductive film such as ITO is formed so as to cover the surface of the third interlayer insulating film 26 and fill the contact holes 63 and 66. By patterning the transparent conductive film, the first pixel electrode 31a and the first conductive film are patterned. A pixel electrode 31 including the two pixel electrodes 31b is formed. The film thickness of the pixel electrode 31 is approximately 50 nm to 100 nm. The first pixel electrode 31 a is electrically connected to the first connection wiring 61 by a transparent conductive film filling the contact hole 63. Although not shown in FIG. 4A, the second pixel electrode 31b is also electrically connected to the second connection wiring 64 by a transparent conductive film filling the contact hole 66.

  An insulating film made of, for example, silicon oxide is formed on the third interlayer insulating film 26 so as to cover the pixel electrode 31 (the first pixel electrode 31a and the second pixel electrode 31b), and the insulating film is patterned to form a pixel. An insulating layer 27 that forms an opening 27 a is formed on the pixel electrode 31 so as to overlap with the outer edge of the electrode 31 (first pixel electrode 31 a). At the same time, as shown in FIGS. 3 and 4B, an insulating layer that fills the space between the second pixel electrode 31b and the first pixel electrode 31a formed in the region surrounded by the first pixel electrode 31a. 29 is formed. The gap between the first pixel electrode 31a and the second pixel electrode 31b in the opening 27a where the insulating layer 29 is formed is approximately 1 μm to 2 μm. The film thickness of the insulating layers 27 and 29 is approximately 50 nm to 100 nm, like the pixel electrode 31.

  A photosensitive resin layer made of, for example, photosensitive polyimide is formed so as to cover the pixel electrode 31 (the first pixel electrode 31a and the second pixel electrode 31b) and the insulating layers 27 and 29, and the photosensitive resin layer is patterned. The organic insulating layer 28 that forms the opening 28 a is formed on the pixel electrode 31. The film thickness of the organic insulating layer 28 is approximately 1 μm to 2 μm. The opening 28a of the organic insulating layer 28 forms an opening that is slightly larger than the opening 27a of the insulating layer 27 but slightly larger. In other words, the insulating layer 27 protrudes inside the opening 28a of the organic insulating layer 28 to form the opening 27a.

  In this embodiment, the insulating layer 27 made of an inorganic insulating material corresponds to the lower insulating layer of the present invention, and the organic insulating layer 28 made of an organic insulating material corresponds to the upper insulating layer. The configuration including the insulating layer 27 and the organic insulating layer 28 corresponds to the first insulating layer of the present invention. The insulating layer 29 that fills the gap between the first pixel electrode 31a and the second pixel electrode 31b in the opening 27a corresponds to the second insulating layer of the present invention.

  A functional layer 32 is formed on the pixel electrode 31 in the opening 27a (opening 28a). The functional layer 32 of the present embodiment includes, for example, a hole injection layer, an intermediate layer, and a light emitting layer, and all are formed using a liquid phase process (coating method). Although a detailed formation method will be described later, the hole injection layer, the intermediate layer, and the light emitting layer are sequentially formed by applying and drying a functional liquid containing a material for forming each layer in the opening 28a surrounded by the organic insulating layer 28 and drying it. It is formed. Therefore, since the organic insulating layer 28 plays a role of retaining the functional liquid in the opening 28a, the organic insulating layer 28 is hereinafter referred to as a partition wall 28. The configuration of the functional layer 32 is not limited to the hole injection layer, the intermediate layer, and the light emitting layer, and other layers that control the flow of carriers (holes and electrons) between the pixel electrode 31 and the counter electrode 33. May be provided.

  Next, the counter electrode 33 is formed so as to cover the functional layer 32 and the partition wall 28. The counter electrode 33 is formed by using, for example, an MgAg alloy so that the film thickness is controlled so as to have optical transparency. The counter electrode 33 is formed as a common electrode so as to cover at least the display region E <b> 1 and straddle the plurality of sub-pixels 18. Thereby, the organic EL element 30 in which the functional layer 32 including the light emitting layer is formed between the pixel electrode 31 and the counter electrode 33 is completed.

  Next, a sealing layer 34 that prevents the entry of moisture, oxygen, or the like is formed so that moisture, oxygen, or the like does not enter the plurality of organic EL elements 30 to deteriorate the light emission characteristics or the light emission lifetime. The sealing layer 34 includes, for example, a first sealing layer 34a, a buffer layer 34b, and a second sealing layer 34c that are sequentially formed from the counter electrode 33 side. The first sealing layer 34a and the second sealing layer 34c are preferably made of a light-transmitting inorganic material that hardly transmits components such as moisture and oxygen, and examples thereof include silicon oxynitride (SiON). Increasing the thickness of the silicon oxynitride can further suppress the intrusion of moisture, oxygen, etc. However, if the thickness is increased, cracks and the like are likely to occur due to thermal expansion and contraction, so that the first seal with a certain thickness can be obtained. After forming the stop layer 34a, the second sealing layer 34c is preferably stacked with the buffer layer 34b interposed therebetween. The buffer layer 34b may be formed using an organic material for the purpose of flattening the surface of the substrate 11 on which the organic EL element 30 is formed, or the first sealing layer 34a and the second sealing layer 34c. It may be formed of a different inorganic material.

In the light emitting device 100 of the present embodiment, as shown in FIG. 4B, the light emitted from the organic EL element 30 (functional layer 32) in the element substrate 10 is reflected by the reflective layer 60 and extracted from the counter substrate 40 side. The top emission type. Therefore, a substrate such as transparent glass is used as the base material 38 of the counter substrate 40. The light shielding portion 36 is a black matrix (BM) formed so as to partition the sub-pixel 18 on the base material 38. The light shielding portion 36 can be formed using a light shielding metal material or an alloy thereof, or a light shielding resin material. The color filter 37 has a colored layer (filter layer) of at least red (R), green (G), and blue (B), and uses, for example, a photosensitive resin material containing a color material to block the light shielding portion 36. It is formed to cover. A colored layer is formed for each sub-pixel 18. The light emission from the organic EL element 30 passes through the color filter 37 and is extracted from the counter substrate 40 side, whereby the color purity of the light emission is improved.
Such a counter substrate 40 and the element substrate 10 are bonded via a transparent resin layer 35.

  Note that the planar arrangement of the switching transistor 21, the storage capacitor 22, and the driving transistor 23 of the pixel circuit 20 in the sub-pixel 18 of the light emitting device 100 and the wiring structure on the substrate 11 are not limited to this. Absent. A part of the first connection wiring 61 connected to the first pixel electrode 31a and a part of the second connection wiring 64 connected to the second pixel electrode 31b are shielded from light when viewed from the substrate 11 side. However, as will be described later in detail, it may be formed at a position where the laser beam incident from the substrate 11 side can reach.

<Method for producing organic EL element>
Next, a more specific method for manufacturing the organic EL element 30 will be described with reference to FIG. 5A to 5E are schematic cross-sectional views illustrating a method for manufacturing an organic EL element. In FIG. 5, illustration of configurations of signal lines, pixel circuits, and the like that are formed below the pixel electrode 31 on the base material 11 is omitted.

  As shown in FIG. 5A, first, surface treatment is performed so that the surface of the pixel electrode 31 in the opening 28a defined by the partition wall 28 is lyophilic. As the surface treatment method, plasma treatment using oxygen gas as a treatment gas is preferable. Thereby, lyophilicity is imparted to the surface of the pixel electrode 31 made of the transparent conductive film exposed in the opening 28a and the surfaces of the insulating layers 27 and 29 made of an inorganic insulating material such as silicon oxide. Subsequently, plasma processing is performed using a fluorine-based processing gas such as carbon tetrafluoride. As a result, fluorine is introduced into the surface of the partition wall 28 made of an organic insulating material to impart liquid repellency. The organic insulating material constituting the partition wall 28 contains a liquid repellent material such as a fluorine-based compound or a siloxane-based compound so that the surface of the partition wall 28 exhibits liquid repellency so that the plasma generated by the fluorine-based processing gas is used. Processing may be omitted.

Next, as shown in FIG. 5B, a functional liquid 80 containing a hole injection layer forming material is applied in the opening 28a. In the present embodiment, a discharge head (inkjet head) 70 is used as a method for applying the functional liquid 80. Since the ejection head 70 ejects the functional liquid 80 from the nozzle as droplets, a predetermined amount of the functional liquid 80 can be applied with high accuracy.
As the hole injection layer forming material, a material having an electrical resistance after film formation of 10 kΩ · cm or more and less than 100 kΩ · cm is preferable. For example, a polythiophene derivative such as polyethylenedioxythiophene (PEDOT) is used as a polystyrene sulfonic acid as a dopant ( A mixture (PEDOT / PSS) to which PSS) is added can be mentioned.
In this embodiment, the functional liquid 80 containing about 0.5 wt% of PEDOT / PSS in a solvent containing diethylene glycol and water is applied to the opening 28a. The applied functional liquid 80 swells at the opening 28 a due to the interfacial tension with the liquid repellent partition wall 28. Then, the applied functional liquid 80 is heated and dried by a method such as lamp annealing, for example, and as shown in FIG. 5C, the hole injection layer 32a covering the pixel electrode 31 in the opening 28a. Formed. The film thickness of the hole injection layer 32a is approximately 50 nm.

  Next, the functional liquid containing the intermediate layer forming material is applied and dried by the droplet discharge method (inkjet method) using the discharge head 70 in the same manner as the hole injection layer 32a. Subsequently, a functional liquid containing the light emitting layer forming material is applied and dried. In this way, as shown in FIG. 5D, the functional layer 32R in which the intermediate layer 32c and the light emitting layer 32r were sequentially stacked on the hole injection layer 32a was formed. The light emitting layer 32r shown in FIG. 5D can emit red (R) light. Therefore, although not shown in FIG. 5, the light emitting layer 32g is formed in the sub-pixel 18G (functional layer 32G) to obtain green (G) light emission, and blue (B) light emission is obtained. In the sub-pixel 18B (functional layer 32B), the light emitting layer 32b is formed.

The intermediate layer 32c is provided between the hole injection layer 32a and the light emitting layers 32r, 32g, and 32b, and improves the hole transportability (injection property) with respect to the light emitting layers 32r, 32g, and 32b, and the light emitting layer 32r. , 32g, 32b are provided in order to prevent electrons from entering the hole injection layer 32a. That is, the light emission efficiency is improved by the combination of holes and electrons in the light emitting layers 32r, 32g, and 32b. As a material for the intermediate layer 32c, for example, a material containing a triphenylamine-based polymer having a good hole transport property can be used.
In this embodiment, for example, using a functional liquid containing about 0.1 wt% of the above triphenylamine polymer as an intermediate layer forming material in cyclohexylbenzene as a solvent, the film thickness is about 10 nm to 20 nm. An intermediate layer 32c was formed.

As the light emitting layer forming material, for example, polyfluorene derivative (PF), polyparaphenylene vinylene derivative (PPV), polyphenylene derivative (PP), polyparaphenylene derivative (PPP), polyvinyl which can produce red, green and blue light emission can be used. Polythiophenylene derivatives such as carbazole (PVK) and PEDOT, polymethylphenylenesilane (PMPS), and the like can be used. In addition, polymer materials such as perylene dyes, coumarin dyes, rhodamine dyes, rubrene, perylene, 9,10-diphenylanthracene, tetraphenylbutadiene, nile red, coumarin 6, quinacrine, etc. A low molecular material may be doped.
In the present embodiment, for example, by using a functional liquid containing approximately 0.7 wt% of a polyfluorene derivative (PF) as a light emitting layer forming material in cyclohexylbenzene as a solvent, a light emitting layer 32r having a film thickness of 50 nm to 100 nm, 32g and 32b were formed.

Next, as shown in FIG. 5E, a counter electrode 33 as a cathode is formed so as to cover the partition wall 28 and the functional layer 32R (functional layer 32G, functional layer 32B). Thereby, the organic EL element 30R (30) is configured.
As the material of the counter electrode 33, aluminum (Al), an alloy of silver (Ag) and magnesium (Mg), or the like is used. A Ca, Ba, or LiF film having a small work function may be formed on the side close to the functional layer 32R (functional layer 32G, functional layer 32B). Examples of the method for forming the counter electrode 33 include vapor deposition, sputtering, and CVD. In particular, the vapor deposition method is preferable in that the functional layer 32R (functional layer 32G, functional layer 32B) can be prevented from being damaged by heat. The counter electrode 33 is formed with a film thickness of about 20 nm to 40 nm so as to have optical transparency.

<Repair of organic EL element>
Next, a defect caused by uneven application of the functional layer 32 that easily occurs when the functional layer 32 of the organic EL element 30 is formed by a liquid phase process (droplet discharge method), and a method for repairing the defect are illustrated in FIG. Will be described with reference to FIG. FIG. 6A is a schematic plan view showing an example of coating unevenness of the functional layer, and FIGS. 6B and 6C are schematic cross-sectional views showing a method for repairing the organic EL element using laser light. 6 (b) and 6 (c) show a cross section of the main part of the cross sectional view of FIG. 4 (a).

As described above, the functional layer 32 is formed by stacking the hole injection layer 32a, the intermediate layer 32c, and the light emitting layer (the light emitting layer 32r, the light emitting layer 32g, and the light emitting layer 32b). In order to realize light emission with a desired luminance from the functional layer 32 and to secure a desired light emission lifetime, it is desirable that each layer is uniformly formed with a target film thickness on the pixel electrode 31.
For example, if the hole injection layer 32a is not formed so as to cover the entire surface of the pixel electrode 31 exposed in the opening 27a (opening 28a), and a portion where the hole injection layer 32a is not formed is formed in part, the light emitting layer In the (light emitting layer 32r, light emitting layer 32g, light emitting layer 32b), a portion where holes are not injected is generated. Light emission cannot be obtained from a portion where holes are not injected, and a dark spot is generated.
Further, for example, when a portion with a thin film thickness of the hole injection layer 32a covering the pixel electrode 31 is generated, the electric resistance in the functional layer 32 in the thin film portion is lower than in other portions. Then, current flows more easily in the portion where the electrical resistance is lower than in the other portions, so that a bright point is generated where the portion where a large amount of current flows is higher (brighter) than the other portions. If the current flows intensively at the bright spot, the light emission life may be shortened.
Such dark spots (spots) and bright spots are caused not only by uneven coating of the hole injection layer 32a but also by uneven coating of the intermediate layer 32c and the light emitting layers (light emitting layers 32r, 32g, 32b). It also occurs in some cases. It also occurs when foreign material is included in the functional layer 32.

  In particular, when the functional layer 32 is formed using a liquid phase process (droplet discharge method), the surface of the pixel electrode 31 in the opening 28a is lyophilic in order to form the functional layer 32 uniformly in the opening 28a. Or a surface treatment for imparting liquid repellency to the surface of the partition wall 28 is required. However, even if the surface treatment is performed uniformly, the functional liquid is applied to the corners of the opening 28a surrounded by the liquid-repellent partition walls 28 due to the influence of the interfacial tension of the applied functional liquid. Difficult to spread wet. Therefore, as shown in FIG. 6A, uneven application of the functional layer 32 tends to occur at the corners of the opening 28a. The uneven coating portion is a film in which any of the hole injection layer 32a, the intermediate layer 32c, and the light emitting layer (light emitting layers 32r, 32g, and 32b) in the functional layer 32 is not formed or the film thickness is intended. It is thinner than the thickness or thicker than the target film thickness. That is, dark spots (spots) and bright spots are likely to occur at the corners of the opening 28a and at portions along the opening 28a.

  The pixel electrode 31 of the sub-pixel 18 in the light emitting device 100 of the present embodiment is surrounded by the first pixel electrode 31a located on the outer peripheral side of the pixel electrode 31 and the first pixel electrode 31a in the opening 27a (opening 28a). The second pixel electrode 31b provided in the region is divided. In other words, the first pixel electrode 31a is formed at a position overlapping the inner edge of the opening 27a (opening 28a). Therefore, when the coating unevenness as described above occurs, as shown in FIG. 6B, a part of the first connection wiring 61 that is electrically connected to the first pixel electrode 31a from the substrate 11 side. Is irradiated with a laser beam, and a part of the first connection wiring 61 is cut as shown in FIG. As a result, no current flows from the power supply line 14 to the first pixel electrode 31a via the driving transistor 23. Therefore, it is possible to selectively emit light by flowing a current through the functional layer 32 in contact with the second pixel electrode 31b located on the center side of the opening 27a (opening 28a). That is, although the light emitting area in the sub-pixel 18 is reduced, the organic EL element 30 can be repaired so as not to be affected by dark spots (spots) or bright spots caused by uneven coating of the functional layer 32.

  Of course, a dark spot or a bright spot generated when the functional layer 32 contains a foreign substance or the like also depends on the size or position of the foreign substance, but a part of the first connection wiring 61 or the second connection. If a part of the wiring 64 is irradiated with laser light and cut, the organic EL element 30 can be repaired so as not to be affected.

  The manufacturing method of the light emitting device 100 according to the present embodiment includes an inspection process for detecting the subpixel 18 having a dark spot or a bright spot by causing the light emitting device 100 to emit light, and a first connection of the subpixel 18 having a dark spot or a bright spot. And a repairing process of the organic EL element 30 that cuts the first wiring 61 or the second connecting wiring 64 by irradiating with laser light.

Examples of the method of cutting the wiring with the laser beam include a method using a YAG laser. Specifically, FIG. 6B shows a YAG laser in which the wavelength λ is selected from 1064 nm, 532 nm, 355 nm, and 266 nm, the pulse width is 5 nsec to 10 nsec, the output energy is approximately 6 mJ / pulse, and the beam diameter is 2 mm. As shown, the light is condensed using an optical system such as a condensing lens 90 and irradiated to a part of the wiring.
Wiring structures that can be cut by such a YAG laser include aluminum (Al), chromium (Cr), copper (Cu), gold (Au), molybdenum (Mo), tantalum (Ta), and titanium (Ti). And simple metals such as nickel (Ni) and alloys thereof. A transparent conductive film such as ITO can also be cut with a YAG laser. The thickness of the cuttable wiring is preferably 0.5 μm to 1.0 μm, and the line width is preferably about several μm.

According to the first embodiment, the following effects can be obtained.
(1) The pixel electrode 31 in the sub-pixel 18 of the light emitting device 100 is divided into a first pixel electrode 31a located on the outer peripheral side and a second pixel electrode 31b located inside the first pixel electrode 31a. A part of the first connection wiring 61 for electrical connection between the drain of the driving transistor 23 and the first pixel electrode 31a, and the electrical connection between the drain of the driving transistor 23 and the second pixel electrode 31b. A part of the second connection wiring 64 to be designed has a wiring structure that is not shielded from light as viewed from the base material 11 side. Accordingly, the first pixel electrode 31a and the second pixel electrode 31b are electrically isolated from each other by irradiating and cutting a part of the first connection wiring 61 and a part of the second connection wiring 64 with laser light. Can be made. Therefore, when the functional layer 32 is formed by a liquid phase process (droplet discharge method), dark spots (dark spots) or bright spots caused by uneven application of the functional layer 32 or foreign matters that are likely to occur in a portion along the opening 28a. When a dot is generated, the first pixel electrode 31a or the second pixel electrode 31b in which a dark spot (dark spot) or a bright spot is generated is electrically isolated, and no dark spot (dark spot) or bright spot is generated. Thus, the organic EL element 30 can be repaired.
(2) The hole injection layer 32a initially formed on the pixel electrode 31 in the functional layer 32 has a post-deposition electrical resistance of 10 kΩ · cm or more and less than 100 kΩ · cm as a hole injection layer forming material. For example, it is formed using PEDOT / PSS. Therefore, even if the pixel electrode 31 is divided into the first pixel electrode 31a and the second pixel electrode 31b, a leak current hardly flows between the first pixel electrode 31a and the second pixel electrode 31b. Therefore, if the first connection wiring 61 or the second connection wiring 64 is cut by irradiating the first connection wiring 61 or the second connection wiring 64 in order to repair dark spots and bright spots caused by uneven coating of the functional layer 32 and foreign matters, the first pixel The electrode 31a and the second pixel electrode 31b can be electrically isolated from each other reliably.
(3) The first connection wiring 61 and the second connection wiring 64 are covered with the insulating layer 27 and the partition wall 28 as the first insulating layer on the substrate 11. Therefore, in the repairing operation in which the first connection wiring 61 or the second connection wiring 64 is cut by irradiating the laser beam, the functional layer 32 and the counter electrode 33 are not directly irradiated with the laser beam. 32 and the counter electrode 33 can be prevented from being damaged.
(4) A gap between the first pixel electrode 31a and the second pixel electrode 31b in the opening 27a is filled with an insulating layer 29 as a second insulating layer. Therefore, when the functional layer 32 is formed by a liquid phase process as compared with the case where the insulating layer 29 is not provided, the functional layer 32 is not easily affected by the gap. (Cross sectional shape) can be stabilized.

(Second Embodiment)
Next, the light-emitting device of 2nd Embodiment is demonstrated with reference to FIG. FIG. 7 is a schematic plan view showing the configuration of subpixels in the light emitting device of the second embodiment. The subpixels 18 in the light emitting device of the second embodiment are different in the division method of the pixel electrodes 31 of the subpixels 18 in the light emitting device 100 of the first embodiment. Therefore, the same components as those in the first embodiment are denoted by the same reference numerals and detailed description thereof is omitted.

  As shown in FIG. 7, the pixel electrode 31 is divided into three parts in the sub-pixel 18 of the light emitting device in the present embodiment. Specifically, a first pixel electrode 31a located on the outer peripheral side of the pixel electrode 31, a second pixel electrode 31c provided in an annular shape along an inner side of the first pixel electrode 31a, and a second pixel electrode It is divided into a third pixel electrode 31d provided in a region surrounded by 31c.

  With respect to the connection wiring 55 electrically connected to the drain of the driving transistor 23 through the contact hole 51, the first pixel electrode 31 a is connected to both ends of the first connection wiring 61 and the first connection wiring 61. The contact holes 62 and 63 are electrically connected. Similarly, the second pixel electrode 31 c is electrically connected to the connection wiring 55 by a second connection wiring 64 and contact holes 65 and 66 provided at both ends of the second connection wiring 64. Yes. Similarly, the third pixel electrode 31 d is electrically connected to the connection wiring 55 by a third connection wiring 67 and contact holes 68 and 69 provided at both ends of the third connection wiring 67. Yes.

In the first connection wiring 61, the second connection wiring 64, and the third connection wiring 67, portions other than the contact holes 62, 65, and 68 are other connection wirings, signal wirings, etc. as viewed from the base material 11 side. It does not overlap and is not shielded from light. Therefore, when one of the first connection wiring 61, the second connection wiring 64, or the third connection wiring 67 is cut by irradiating with laser light, the first pixel electrode 31a, Each of the second pixel electrode 31c and the third pixel electrode 31d can be electrically isolated.
In particular, when the functional layer 32 is formed by a liquid phase process (droplet discharge method), even if the coating unevenness of the functional layer 32 reaches not only the first pixel electrode 31a but also the second pixel electrode 31c. If the first pixel electrode 31a and the second pixel electrode 31c are electrically isolated, it is possible to apparently repair dark spots and bright spots caused by coating unevenness. That is, it is possible to repair the organic EL element 30 more effectively than in the case where the pixel electrode 31 is divided into two as in the first embodiment.

(Third embodiment)
Next, the light-emitting device of 3rd Embodiment is demonstrated with reference to FIG. FIG. 8 is a schematic plan view showing the configuration of subpixels in the light emitting device of the third embodiment. The sub-pixels in the light-emitting device of the third embodiment are different in the division method of the pixel electrode 31 of the sub-pixel 18 in the light-emitting device 100 of the first embodiment. Therefore, the same components as those in the first embodiment are denoted by the same reference numerals and detailed description thereof is omitted.

  As shown in FIG. 8, the pixel electrode 31 is divided into three parts in the sub-pixel 18 of the light emitting device in the present embodiment. Specifically, the pixel electrode 31 is a region surrounded by the first pixel electrode 31a located on the outer peripheral side of the pixel electrode 31 and the first pixel electrode 31a, and is vertically moved in the longitudinal direction (Y direction) of the sub-pixel 18. The second pixel electrode 31e and the third pixel electrode 31f are symmetrically divided.

  With respect to the connection wiring 55 electrically connected to the drain of the driving transistor 23 through the contact hole 51, the first pixel electrode 31 a is connected to both ends of the first connection wiring 61 and the first connection wiring 61. The contact holes 62 and 63 are electrically connected. Similarly, the second pixel electrode 31e is electrically connected to the connection wiring 55 by a second connection wiring 64 and contact holes 65 and 66 provided at both ends of the second connection wiring 64. Yes. Similarly, the third pixel electrode 31 f is electrically connected to the connection wiring 55 by a third connection wiring 67 and contact holes 68 and 69 provided at both ends of the third connection wiring 67. Yes.

  In the first connection wiring 61, the second connection wiring 64, and the third connection wiring 67, portions other than the contact holes 62, 65, and 68 are other connection wirings, signal wirings, etc. as viewed from the base material 11 side. It does not overlap and is not shielded from light. Therefore, when one of the first connection wiring 61, the second connection wiring 64, or the third connection wiring 67 is cut by irradiating with laser light, the first pixel electrode 31a, Each of the second pixel electrode 31e and the third pixel electrode 31f can be electrically isolated.

  In particular, even if a foreign substance enters the functional layer 32 in the process of forming the functional layer 32, the pixel electrode 31 is divided into three, and the second pixel electrode 31e and the third pixel electrode 31f have the same area. Since it is divided, compared to the case where the pixel electrode 31 is divided into two as in the first embodiment, the area that does not emit light due to the repair is suppressed, and the organic EL element 30 can be repaired more effectively.

(Fourth embodiment)
Next, the electronic apparatus of this embodiment will be described with reference to FIG. FIG. 9A is a schematic diagram illustrating a laptop personal computer that is an example of an electronic device, and FIG. 9B is a schematic diagram illustrating a flat-screen television (TV) that is an example of the electronic device.

As shown in FIG. 9A, a personal computer 1000 as an electronic device includes a main body portion 1001 including a keyboard 1002 and a display unit 1003 including a display portion 1004. The display unit 1003 is a main body portion 1001. On the other hand, it is rotatably supported via a hinge structure.
In the personal computer 1000, the light emitting device 100 of the first embodiment is mounted on the display unit 1004.

  As shown in FIG. 9B, in a flat-screen television (TV) 1100 as an electronic device, the light emitting device 100 of the first embodiment is mounted on a display unit 1101.

  Since the light emitting device 100 can apparently repair the dark spots and bright spots in the sub-pixel 18, the ratio of defective dark spots and bright spots decreases. Therefore, since the light-emitting device 100 is manufactured with high yield, the personal computer 1000 and the thin TV 1100 with excellent cost performance can be provided.

  The electronic device on which the light emitting device 100 is mounted is not limited to the personal computer 1000 or the thin TV 1100. For example, an electronic apparatus having a display unit such as a portable information terminal such as a smartphone or a POS, a navigator, a viewer, a digital camera, or a monitor direct-view video recorder can be given.

  The present invention is not limited to the above-described embodiment, and can be appropriately changed without departing from the gist or concept of the invention that can be read from the claims and the entire specification. Electronic devices to which the light emitting device 100 is applied are also included in the technical scope of the present invention. Various modifications other than the above embodiment are conceivable. Hereinafter, a modification will be described.

  (Modification 1) It is not limited that all the organic layers constituting the functional layer 32 are formed by a liquid phase process. The present invention is used if at least one of the hole injection layer 32a, the intermediate layer 32c, and the light emitting layer (light emitting layers 32r, 32g, 32b) constituting the functional layer 32 is formed by a liquid phase process. Thus, the organic EL element 30 can be effectively repaired.

(Modification 2) In the light emitting device 100, the functional layer 32 that can emit light of different colors is not formed for each of the sub-pixels 18R, 18G, and 18B. FIG. 10 is a schematic cross-sectional view illustrating the structure of a subpixel of a light emitting device according to a modification. In addition, the same code | symbol is attached | subjected and demonstrated to the same structure as the said light-emitting device 100. As illustrated in FIG. 10, a light emitting device 200 according to a modification includes organic EL elements 30 </ b> R, 30 </ b> G, and 30 </ b> B on an element substrate 10. Each of the organic EL elements 30R, 30G, and 30B includes pixel electrodes 31R, 31G, and 31B that are divided into two parts, a first pixel electrode 31a and a second pixel electrode 31b. Further, between the pixel electrodes 31R, 31G, and 31B and the counter electrode 33 as a common electrode, a functional layer 32 provided in common to the organic EL elements 30R, 30G, and 30B is provided. The functional layer 32 has a configuration capable of obtaining white light emission. For example, the functional layer 32 includes a light emitting layer capable of obtaining red (R) light emission, a light emitting layer capable of obtaining green (G) light emission, and a light emitting layer capable of obtaining blue (B) light emission. For example, the light emitting layer which can obtain blue (B) light emission, and the light emitting layer from which yellow (Y) light emission is obtained may be the structure which can obtain pseudo white light emission.
Light emitted from the organic EL elements 30R, 30G, and 30B is reflected by the reflective layer 60, passes through the colored layers (filter layers) 37R, 37G, and 37B of the counter substrate 40, and is extracted from the counter substrate 40 side. Therefore, the light emitting device 200 is a top emission type.
In the light emitting device 200, the functional layer 32 capable of obtaining white light emission can be formed using a liquid phase process, a gas phase process, or both. A typical liquid phase process includes a spin coating method. An opening 27a is formed by the insulating layer 27 overlapping the outer edge of the pixel electrode 31 (first pixel electrode 31a). Therefore, for example, when the functional layer 32 is formed using a spin coating method, there is a possibility that uneven application of the functional layer 32 may occur along the side of the opening 27a. Therefore, it is effective to divide the pixel electrode 31 into the first pixel electrode 31a and the second pixel electrode 31b.

  (Modification 3) In the second embodiment and the third embodiment, the pixel electrode 31 of the sub-pixel 18 is divided into three. However, the present invention is not limited to this, and the number of divisions can be increased. For example, the first pixel electrode 31a may be divided into upper and lower parts in the Y direction, and the pixel electrode 31 may be divided into four parts.

  (Modification 4) The planar arrangement of the pixel electrode 31 in the top emission type light emitting device 100 is not limited to this. For example, in FIG. 3, if the reflective layer 60 is arranged so as to overlap the switching transistor 21, the storage capacitor 22, and the driving transistor 23, the pixel electrode 31 also corresponds to the reflective layer 60, and the switching transistor 21, the storage capacitor 22 and the driving transistor 23 can be arranged so as to overlap. Therefore, a larger light emission area can be obtained.

  (Modification 5) The light emitting device to which the division of the pixel electrode 31 of the present invention is applied is not limited to the top emission type. If the reflective layer 60 is deleted on the base material 11 and the counter electrode 33 is configured to have light reflectivity, it is also applicable to a bottom emission type light emitting device that extracts light emitted from the functional layer 32 from the base material 11 side. can do.

  DESCRIPTION OF SYMBOLS 10 ... Element board | substrate, 11 ... Base material as a board | substrate, 14 ... Power supply line, 23 ... Transistor for a drive as a transistor, 27 ... Insulating layer as a lower insulating layer, 28 ... Organic insulating layer or partition as an upper insulating layer, 29 ... an insulating layer as a second insulating layer, 30 ... an organic EL element as a light emitting element, 31 ... a pixel electrode, 31a ... a first pixel electrode, 31b, 31c, 31e ... a second pixel electrode, 31d, 31f ... a third Pixel electrode, 32, 32R, 32G, 32B ... functional layer, 32a ... hole injection layer, 32c ... intermediate layer, 32r, 32g, 32b ... light emitting layer, 33 ... counter electrode, 37 ... color filter, 40 ... counter substrate, 61 ... 1st connection wiring, 64 ... 2nd connection wiring, 67 ... 3rd connection wiring, 100, 200 ... Light-emitting device, 1000 ... Personal computer as electronic equipment, 11 0 ... a flat-screen TV as an electronic equipment (TV).

Claims (7)

Provided on a translucent substrate,
Transistors,
A power line electrically connected to one of a source or a drain of the transistor;
A pixel electrode electrically connected to the other of the source or the drain;
A counter electrode disposed to face the pixel electrode;
A light emitting element having a functional layer including a light emitting layer, wherein at least one layer is formed by a coating method between the pixel electrode and the counter electrode,
The pixel electrode is divided into a first pixel electrode arranged on the outer peripheral side of the pixel electrode and a second pixel electrode arranged inside a region surrounded by the first pixel electrode,
A first connection wiring provided between the other of the source or the drain and the first pixel electrode;
A second connection wiring provided between the other of the source or the drain and the second pixel electrode;
At least a part of the first connection wiring and at least a part of the second connection wiring are not shielded so that light incident from the substrate side can reach. A first insulating layer formed on the outer edge of the first pixel electrode and forming an opening on the pixel electrode;
The light emitting device according to claim 1, wherein the first connection wiring and the second connection wiring are covered with the first insulating layer.   The first insulating layer includes a lower insulating layer made of an inorganic insulating material formed in contact with the first pixel electrode, and an upper insulating layer made of an organic insulating material formed on the lower insulating layer. The light-emitting device according to claim 2.   4. The semiconductor device according to claim 1, further comprising a second insulating layer that fills a gap between the first pixel electrode and the second pixel electrode in a region surrounded by the first pixel electrode. 5. The light-emitting device of description.   The light emitting device according to claim 1, wherein the functional layer includes a hole injection layer having an electric resistance of 10 kΩ · cm or more and less than 100 kΩ · cm. The pixel electrode includes a third pixel electrode disposed inside a region surrounded by the first pixel electrode,
A third connection wiring provided between the other of the source or the drain and the third pixel electrode;
6. The light emitting device according to claim 1, wherein at least a part of the third connection wiring is not shielded so that light incident from the substrate side reaches. 6.   An electronic apparatus comprising the light emitting device according to claim 1.

Images