JP2003308976A - Light-emitting device - Google Patents
Light-emitting deviceInfo
- Publication number
- JP2003308976A JP2003308976A JP2003033891A JP2003033891A JP2003308976A JP 2003308976 A JP2003308976 A JP 2003308976A JP 2003033891 A JP2003033891 A JP 2003033891A JP 2003033891 A JP2003033891 A JP 2003033891A JP 2003308976 A JP2003308976 A JP 2003308976A
- Authority
- JP
- Japan
- Prior art keywords
- light
- light emitting
- layer
- colored layer
- emitting element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 150000002894 organic compounds Chemical class 0.000 claims abstract description 39
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- 239000011147 inorganic material Substances 0.000 claims description 15
- 239000010409 thin film Substances 0.000 claims description 15
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- 229910052581 Si3N4 Inorganic materials 0.000 description 9
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- 239000003086 colorant Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 4
- 229920001940 conductive polymer Polymers 0.000 description 4
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- BRSRUYVJULRMRQ-UHFFFAOYSA-N 1-phenylanthracene Chemical class C1=CC=CC=C1C1=CC=CC2=CC3=CC=CC=C3C=C12 BRSRUYVJULRMRQ-UHFFFAOYSA-N 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 239000007983 Tris buffer Substances 0.000 description 3
- 229910052783 alkali metal Inorganic materials 0.000 description 3
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- 125000005678 ethenylene group Chemical group [H]C([*:1])=C([H])[*:2] 0.000 description 3
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- -1 moisture Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- HONWGFNQCPRRFM-UHFFFAOYSA-N 2-n-(3-methylphenyl)-1-n,1-n,2-n-triphenylbenzene-1,2-diamine Chemical compound CC1=CC=CC(N(C=2C=CC=CC=2)C=2C(=CC=CC=2)N(C=2C=CC=CC=2)C=2C=CC=CC=2)=C1 HONWGFNQCPRRFM-UHFFFAOYSA-N 0.000 description 2
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 150000001340 alkali metals Chemical class 0.000 description 2
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 2
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical class [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 150000004982 aromatic amines Chemical class 0.000 description 2
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- UFVXQDWNSAGPHN-UHFFFAOYSA-K bis[(2-methylquinolin-8-yl)oxy]-(4-phenylphenoxy)alumane Chemical compound [Al+3].C1=CC=C([O-])C2=NC(C)=CC=C21.C1=CC=C([O-])C2=NC(C)=CC=C21.C1=CC([O-])=CC=C1C1=CC=CC=C1 UFVXQDWNSAGPHN-UHFFFAOYSA-K 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000002542 deteriorative effect Effects 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229920000767 polyaniline Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
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- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
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- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- UWRZIZXBOLBCON-VOTSOKGWSA-N (e)-2-phenylethenamine Chemical class N\C=C\C1=CC=CC=C1 UWRZIZXBOLBCON-VOTSOKGWSA-N 0.000 description 1
- CAMPQFALWQQPAZ-UHFFFAOYSA-N 1-n-(4-methylphenyl)-4-n-[4-[4-(n-[4-(n-(4-methylphenyl)anilino)phenyl]anilino)phenyl]phenyl]-1-n,4-n-diphenylbenzene-1,4-diamine Chemical compound C1=CC(C)=CC=C1N(C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=CC(=CC=1)C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=CC(C)=CC=1)C1=CC=CC=C1 CAMPQFALWQQPAZ-UHFFFAOYSA-N 0.000 description 1
- YLYPIBBGWLKELC-RMKNXTFCSA-N 2-[2-[(e)-2-[4-(dimethylamino)phenyl]ethenyl]-6-methylpyran-4-ylidene]propanedinitrile Chemical compound C1=CC(N(C)C)=CC=C1\C=C\C1=CC(=C(C#N)C#N)C=C(C)O1 YLYPIBBGWLKELC-RMKNXTFCSA-N 0.000 description 1
- NSPMIYGKQJPBQR-UHFFFAOYSA-N 4H-1,2,4-triazole Chemical class C=1N=CNN=1 NSPMIYGKQJPBQR-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229920012266 Poly(ether sulfone) PES Polymers 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 125000000609 carbazolyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3NC12)* 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000000306 component Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 150000004696 coordination complex Chemical class 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- VBVAVBCYMYWNOU-UHFFFAOYSA-N coumarin 6 Chemical compound C1=CC=C2SC(C3=CC4=CC=C(C=C4OC3=O)N(CC)CC)=NC2=C1 VBVAVBCYMYWNOU-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
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- 230000006866 deterioration Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 239000007850 fluorescent dye Substances 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- VOFUROIFQGPCGE-UHFFFAOYSA-N nile red Chemical compound C1=CC=C2C3=NC4=CC=C(N(CC)CC)C=C4OC3=CC(=O)C2=C1 VOFUROIFQGPCGE-UHFFFAOYSA-N 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
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- YYMBJDOZVAITBP-UHFFFAOYSA-N rubrene Chemical compound C1=CC=CC=C1C(C1=C(C=2C=CC=CC=2)C2=CC=CC=C2C(C=2C=CC=CC=2)=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 YYMBJDOZVAITBP-UHFFFAOYSA-N 0.000 description 1
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- 229910052725 zinc Inorganic materials 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Landscapes
- Electroluminescent Light Sources (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、有機化合物から成
る層(以下、有機化合物層という)を有する発光素子を
備えた発光装置の作製方法に関し、特に多色表示機能に
関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a light emitting device including a light emitting element having a layer made of an organic compound (hereinafter referred to as an organic compound layer), and more particularly to a multicolor display function.
【0002】[0002]
【従来の技術】一対の電極間に有機化合物層を介在させ
た発光素子を用いた自発光型の表示装置は視野角が広
く、視認性も優れることから次世代の表示装置として注
目されている。2. Description of the Related Art A self-luminous display device using a light emitting element in which an organic compound layer is interposed between a pair of electrodes has a wide viewing angle and is excellent in visibility, and is therefore attracting attention as a next-generation display device. .
【0003】発光素子の発光機構は、一対の電極の一方
である陽極から注入された正孔と、他方である陰極から
注入された電子とが発光性有機化合物層(発光層)で再
結合して励起子を形成し、その励起子が基底状態に戻る
時に光を放出する現象として考えられている。この発光
は電界発光(エレクトロルミネッセンス)と呼ばれてい
る。電界発光には蛍光と燐光とがあり、それらは励起状
態における一重項状態からの発光(蛍光)と、三重項状
態からの発光(燐光)がある。発光による輝度は数千〜
数万cd/m2におよぶことから、原理的に表示装置等への
応用が可能であると考えられている。A light emitting mechanism of a light emitting element is that a hole injected from an anode, which is one of a pair of electrodes, and an electron injected from a cathode, which is the other electrode, are recombined in a light emitting organic compound layer (light emitting layer). Is considered to be a phenomenon in which light is emitted when the excitons return to the ground state by forming excitons. This light emission is called electroluminescence. Electroluminescence includes fluorescence and phosphorescence, which include emission from a singlet state in an excited state (fluorescence) and emission from a triplet state (phosphorescence). Luminance due to light emission is several thousand
Since it reaches tens of thousands of cd / m 2 , it is considered that it can be applied to display devices in principle.
【0004】このような発光素子において、通常、有機
薄膜は1μmを下回るほどの薄膜で形成される。また、発
光素子は、有機薄膜そのものが光を放出する自発光型の
素子であるため、従来の液晶ディスプレイに用いられて
いるようなバックライトも必要ない。したがって、発光
素子は極めて薄型軽量に作製できることが大きな利点で
ある。In such a light emitting device, the organic thin film is usually formed as a thin film having a thickness of less than 1 μm. Further, since the light emitting element is a self-luminous element in which the organic thin film itself emits light, a backlight as used in a conventional liquid crystal display is not necessary. Therefore, it is a great advantage that the light emitting element can be manufactured to be extremely thin and lightweight.
【0005】また、アクティブマトリクス駆動と呼ばれ
る方式は、各画素毎に薄膜トランジスタ(TFT)を設
け、発光素子の発光を個々に制御することにより高精細
でクロストークのない画像表示を可能としていた。Further, in the method called active matrix driving, a thin film transistor (TFT) is provided for each pixel and the light emission of the light emitting element is individually controlled to enable high definition and crosstalk-free image display.
【0006】カラー表示をする方式においては、発光層
の材料又は添加物を異ならせ、各画素毎に発光色を赤、
緑、青の異ならせて配列させる方式と、白色光を発する
発光素子を用い、カラーフィルターと組み合わせる方式
などが知られていた。In the color display system, the materials or additives of the light emitting layer are made different so that the light emitting color is red for each pixel.
A method of arranging differently for green and blue, a method of using a light emitting element which emits white light and combining with a color filter, and the like have been known.
【0007】[0007]
【発明が解決しようとする課題】しかし、カラーフィル
ターと、発光素子を各画素に設けた画素マトリクスとを
別々に形成すると、両者を高い精度で位置合わせをして
組み立てることが必要であり、この精度が低い場合には
実際上の開口率が低下するという問題があった。However, when the color filter and the pixel matrix in which the light emitting element is provided in each pixel are separately formed, it is necessary to align and assemble the both with high accuracy. When the accuracy is low, there is a problem in that the aperture ratio actually decreases.
【0008】勿論、TFT基板の作製工程で、カラーフ
ィルターの着色層を同じ合わせ精度で作り込むことも考
えられるが、その耐熱温度は200℃程度であるので、
TFTにおける450℃程度のプロセス温度に耐えるこ
とができなかった。Of course, it is possible to form the colored layers of the color filter with the same alignment accuracy in the process of manufacturing the TFT substrate, but since the heat resistant temperature is about 200 ° C.,
The TFT could not withstand a process temperature of about 450 ° C.
【0009】また、カラーフィルターの着色層を形成す
る際に用いるカラーレジストと呼ばれる材料はかなり高
価な材料であり、TFT工程とカラーフィルター工程と
の歩留まりが積算されるようなプロセスは、製造コスト
の増加要因となり適していないという問題点があった。Further, the material called color resist used when forming the colored layer of the color filter is a considerably expensive material, and the process in which the yield of the TFT process and the yield of the color filter process are integrated increases the manufacturing cost. There was a problem that it became an increasing factor and was not suitable.
【0010】本発明は、このような問題点を解決するも
のであり、高精細で且つ製造コストの低減を可能とする
発光装置を提供することを目的とする。The present invention solves such problems, and an object of the present invention is to provide a light emitting device having high definition and capable of reducing the manufacturing cost.
【0011】[0011]
【課題を解決するための手段】上記問題点を解決するた
めに、本発明の構成は、基板上にTFTと、カラーフィ
ルターの着色層と、一対の電極間に発光性を有する有機
化合物層が形成された発光素子とを有した発光装置であ
り、カラーフィルターの着色層はTFT上の無機又は有
機材料で形成される絶縁膜の平坦面上に形成され、発光
素子の発光は該着色層を通して放射されるものである。In order to solve the above problems, the structure of the present invention is such that a TFT, a colored layer of a color filter, and an organic compound layer having a light emitting property are provided between a pair of electrodes on a substrate. A light emitting device having a formed light emitting element, wherein the colored layer of the color filter is formed on a flat surface of an insulating film formed of an inorganic or organic material on the TFT, and the light emitted from the light emitting element passes through the colored layer. It is radiated.
【0012】本発明は、基板上に形成されたTFTを覆
う無機又は有機材料から成る平坦化絶縁膜が形成され、
絶縁膜の平坦面上にカラーフィルターの着色層が設けら
れ、着色層上に一対の電極間に発光性を有する有機化合
物層が形成された発光素子が設けられ、発光素子の発光
は着色層を通して放射されるものである。According to the present invention, a flattening insulating film made of an inorganic or organic material is formed to cover a TFT formed on a substrate,
The colored layer of the color filter is provided on the flat surface of the insulating film, and the light-emitting element in which the organic compound layer having a light-emitting property is formed between the pair of electrodes is provided on the colored layer. It is radiated.
【0013】本発明は、基板上に形成されたTFTを覆
う無機又は有機材料から成る平坦化絶縁膜が形成され、
絶縁膜の平坦面上にカラーフィルターの着色層が設けら
れ、着色層上に一対の電極間に発光性を有する有機化合
物層が形成された発光素子が設けられ、TFTと発光素
子は、絶縁膜及び着色層を貫通する配線により電気的に
接続され、発光素子の発光は着色層を通して放射される
ものである。According to the present invention, a flattening insulating film made of an inorganic or organic material is formed to cover a TFT formed on a substrate,
The colored layer of the color filter is provided on the flat surface of the insulating film, and the light emitting element in which the organic compound layer having a light emitting property is formed between the pair of electrodes is provided on the colored layer. And are electrically connected by a wiring penetrating the colored layer, and the light emitted from the light emitting element is emitted through the colored layer.
【0014】本発明は、一対の電極間に発光性を有する
有機化合物層が形成された発光素子とTFTとがマトリ
クス状に配列して画素部が形成され、各画素に対応して
設けられるカラーフィルターの着色層は、発光素子とT
FTとの間にある無機又は有機材料から成る平坦化絶縁
膜の平坦面に接して設けられ、隣接する着色層の境界領
域は、TFTに信号を送るゲート信号線又はデータ線と
重畳して設けられているものである。According to the present invention, a light emitting element in which an organic compound layer having a light emitting property is formed between a pair of electrodes and a TFT are arranged in a matrix to form a pixel portion, and a color is provided corresponding to each pixel. The colored layer of the filter is composed of the light emitting element and the T
It is provided in contact with the flat surface of the flattening insulating film made of an inorganic or organic material between the TFT and FT, and the boundary region between the adjacent colored layers is provided so as to overlap with the gate signal line or the data line for sending a signal to the TFT. It is what has been.
【0015】本発明は、透光性の電極と非透光性の電極
とから成る一対の電極間に発光性を有する有機化合物層
が形成された発光素子とTFTとがマトリクス状に配列
して画素部が形成され、各画素に対応して設けられるカ
ラーフィルターの着色層は、発光素子とTFTとの間に
ある無機又は有機材料から成る平坦化絶縁膜の平坦面に
接して設けられ、隣接する着色層の境界領域は、TFT
に信号を送るゲート信号線又はデータ線と重畳して設け
られ、透光性の電極は着色層の内側に重畳して設けられ
ているものである。According to the present invention, a light emitting element in which an organic compound layer having a light emitting property is formed between a pair of electrodes composed of a light transmissive electrode and a non-light transmissive electrode and a TFT are arranged in a matrix. The colored layer of the color filter in which the pixel portion is formed and provided corresponding to each pixel is provided in contact with the flat surface of the planarization insulating film made of an inorganic or organic material between the light emitting element and the TFT, and is adjacent to the flat surface. The boundary area of the colored layer
Is provided so as to be overlapped with a gate signal line or a data line for transmitting a signal, and the light-transmitting electrode is provided so as to be overlapped with the inside of the coloring layer.
【0016】無機又は有機材料から成る平坦化絶縁膜は
酸化珪素などの無機絶縁膜、又はポリイミド、アクリル
などで形成する。着色層はこの平坦化絶縁膜上に形成し
ても良いし、その間に窒化珪素などの無機絶縁膜を介在
させても良い。カラーフィルターの着色層上には各画素
毎に個別電極として形成する透光性電極(陽極)を形成
する。また、この透光性電極(陽極)と着色層との間に
窒化珪素膜などの無機絶縁膜を形成しても良い。The flattening insulating film made of an inorganic or organic material is formed of an inorganic insulating film such as silicon oxide, or polyimide or acrylic. The colored layer may be formed on this flattening insulating film, or an inorganic insulating film such as silicon nitride may be interposed therebetween. A transparent electrode (anode) formed as an individual electrode is formed for each pixel on the colored layer of the color filter. Further, an inorganic insulating film such as a silicon nitride film may be formed between the translucent electrode (anode) and the colored layer.
【0017】発光素子はこの透光性電極(陽極)を一方
の電極として有機化合物層を積層させ、さらにその上層
に透光性電極(陽極)と対向する他方の電極を形成す
る。このような発光素子の構造とすることで発光は透光
性電極(陽極)側から放射され、即ちカラーフィルター
の着色層を透過させて外部に取り出すことができる。In the light-emitting element, an organic compound layer is laminated using this transparent electrode (anode) as one electrode, and the other electrode facing the transparent electrode (anode) is formed on the organic compound layer. With such a structure of the light emitting element, light emission can be emitted from the transparent electrode (anode) side, that is, transmitted through the colored layer of the color filter and taken out to the outside.
【0018】隣接する着色層の境界領域は、画素部に配
設されるゲート信号線又はデータ線号線と重畳する位置
に設け、配線を遮光膜として利用することができ、開口
率を向上させることができる。The boundary area between the adjacent colored layers is provided at a position overlapping the gate signal line or the data line which is arranged in the pixel portion, and the wiring can be used as a light-shielding film to improve the aperture ratio. You can
【0019】有機化合物層は、陽極側にある正孔注入輸
送層、陰極側にある電子注入輸送層、発光層等を適宜組
み合わせた構造である。正孔注入輸送層又は電子注入輸
送層は、電極からの正孔又は電子の注入効率と、輸送性
(移動度)が特に重要な特性として着目されるものであ
るが、さらに発光層としての機能も兼ね備えた発光性電
子注入輸送層などを組み合わせても良い。The organic compound layer has a structure in which a hole injecting and transporting layer on the anode side, an electron injecting and transporting layer on the cathode side, a light emitting layer and the like are appropriately combined. The hole injecting / transporting layer or the electron injecting / transporting layer is noted as properties in which the hole or electron injecting efficiency from the electrode and the transportability (mobility) are particularly important. A light-emitting electron injecting and transporting layer having the above function may be combined.
【0020】これらの各層を形成する有機化合物は、短
分子系有機化合物と高分子系有機化合物の両者が知られ
ている。短分子系有機化合物の一例は、正孔注入輸送層
として銅フタロシアニン(CuPc)芳香族アミン系材
料であるα−NPD(4,4'-ビス-[N-(ナフチル)-N-フェ
ニル-アミノ]ビフェニル)やMTDATA(4,4',4"-ト
リス(N-3-メチルフェニル-N-フェニル-アミノ)トリフェ
ニルアミン)、電子注入輸送層又は発光性電子注入輸送
層としてトリス−8−キノリノラトアルミニウム錯体
(Alq3)等が知られている。高分子有機発光材料で
は、ポリアニリンやポリチオフェン誘導体(PEDO
T)等が知られている。As the organic compound forming each of these layers, both a short molecular organic compound and a high molecular organic compound are known. An example of a short molecule organic compound is α-NPD (4,4′-bis- [N- (naphthyl) -N-phenyl-amino) which is a copper phthalocyanine (CuPc) aromatic amine material as a hole injecting and transporting layer. ] Biphenyl), MTDATA (4,4 ', 4 "-tris (N-3-methylphenyl-N-phenyl-amino) triphenylamine), Tris-8- as an electron injecting / transporting layer or a luminescent electron injecting / transporting layer Known are quinolinolato aluminum complexes (Alq 3 ), etc. For polymer organic light emitting materials, polyaniline and polythiophene derivatives (PEDO) are known.
T) etc. are known.
【0021】カラーフィルターの着色層は、樹脂バイン
ダー中の顔料、染料を分散させたものを塗布法により形
成し、光露光工程を用いて所定のパターンに形成する。
この場合、無機又は有機材料から成る平坦化面上にカラ
ーフィルターの着色層を各色毎に形成することにより、
高い位置合わせ精度をもって各着色層を配列させること
ができる。The colored layer of the color filter is formed by coating a pigment and a dye dispersed in a resin binder by a coating method, and is formed into a predetermined pattern by a light exposure process.
In this case, by forming a colored layer of a color filter for each color on the flattened surface made of an inorganic or organic material,
The colored layers can be arranged with high alignment accuracy.
【0022】また、アルカリ水溶性現像液でパターン形
成する着色層は、平坦化絶縁層にコンタクトホールを形
成する前に配列させることにより、アルカリ成分や顔
料、染料などにより半導体膜が汚染されることがない。Further, by arranging the colored layer which is patterned by the alkaline water-soluble developing solution before forming the contact hole in the planarization insulating layer, the semiconductor film is contaminated by the alkaline component, pigment or dye. There is no.
【0023】また、平坦化膜と着色層との間に窒化珪素
などの無機絶縁膜を介在させることにより、着色層に含
まれる顔料などの成分がTFT側に拡散するのを防ぐこ
とができる。また、この透光性電極(陽極)と着色層と
の間に窒化珪素膜などの無機絶縁膜を形成することによ
り、発光素子側に着色層に含まれる顔料などの成分が拡
散するのを防ぐことができる。By interposing an inorganic insulating film such as silicon nitride between the flattening film and the colored layer, it is possible to prevent components such as pigment contained in the colored layer from diffusing to the TFT side. Further, by forming an inorganic insulating film such as a silicon nitride film between the translucent electrode (anode) and the colored layer, it is possible to prevent components such as pigments contained in the colored layer from diffusing on the light emitting element side. be able to.
【0024】また、カラーフィルターの着色層の表面を
研磨し平坦化を行っても良い。これにより、カラーフィ
ルターの歩留まりを向上させると同時に、その上に形成
する透光性電極(陽極)表面の平坦性を向上させること
ができ、発光素子の短絡を防止することができる。The surface of the colored layer of the color filter may be polished to flatten it. As a result, the yield of the color filter can be improved, and at the same time, the flatness of the surface of the transparent electrode (anode) formed thereon can be improved, and the short circuit of the light emitting element can be prevented.
【0025】いずれにしても、平坦化層上にカラーフィ
ルターの着色層を形成することにより、この段階で着色
層のピンホール検査などをすることができ、所定の基準
に達しないものは着色層を剥離して再加工することがで
きる。剥離の方法は、溶剤で洗浄除去しても良いし、機
械的に研磨して削り落としても良い。いずれにしても平
坦化膜があることで、TFTにダメージを与えることな
く再加工を施すことができる。In any case, by forming the colored layer of the color filter on the flattening layer, it is possible to perform pinhole inspection of the colored layer at this stage. Can be peeled off and reworked. The peeling method may be carried out by washing and removing with a solvent, or mechanically polishing and scraping off. In any case, the presence of the flattening film enables reprocessing without damaging the TFT.
【0026】[0026]
【発明の実施の形態】以下、本発明の実施の形態を図面
を参照して詳細に説明する。図5は基板900には画素
部902、ゲート信号側駆動回路901a、901b、
データ信号側駆動回路901c、入出力端子部935、
配線又は配線群917が備えられた発光装置の一形態を
示している。シールパターン940はゲート信号線側駆
動回路901a、901b、データ信号線側駆動回路9
01c及び当該駆動回路部と入力端子とを接続する配線
又は配線群917と一部が重なっていても良い。このよ
うにすると、表示パネルの額縁領域(画素部の周辺領
域)の面積を縮小させることができる。外部入力端子部
には、FPC936が固着されている。BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In FIG. 5, a substrate 900 includes a pixel portion 902, gate signal side driving circuits 901a and 901b,
A data signal side drive circuit 901c, an input / output terminal portion 935,
11 illustrates one mode of a light-emitting device provided with a wiring or a wiring group 917. The seal pattern 940 includes the gate signal line side drive circuits 901a and 901b and the data signal line side drive circuit 9
01c and the wiring or the wiring group 917 that connects the driving circuit portion and the input terminal may partially overlap. By doing so, the area of the frame region (the peripheral region of the pixel portion) of the display panel can be reduced. An FPC 936 is fixed to the external input terminal section.
【0027】画素部902はTFTと発光素子が画素毎
に設けられ、それがマトリクス状に配列して構成された
ものである。その画素の上面図を図6に示す。尚、図6
は説明のため、発光素子を形成する各層及び隔壁層は省
略して示している。The pixel portion 902 is configured by providing TFTs and light emitting elements for each pixel and arranging them in a matrix. A top view of the pixel is shown in FIG. Incidentally, FIG.
For the sake of explanation, the layers and partition layers forming the light emitting element are omitted.
【0028】図6はR(赤)、G(緑)、B(青)カラ
ー表示を行う画素配列の一例であり、R画素10、G画
素20、B画素30の配列を示している。各画素にはT
FT13、23、33と配線110〜112によってT
FTと接続する透光性電極(陽極)113〜115が設
けられている。カラーフィルターの着色層107〜10
9(Rフィルター107、Gフィルター108、Bフィ
ルター109)はゲート信号線(走査信号線)102〜
104より上層であり、データ信号線11、12、2
1、22、31よりも下層側に形成されている。そし
て、隣接する各着色層の境界領域は、ゲート信号線及び
データ線号線と重畳して設けられている。また、透光性
電極113〜115は、各着色層107〜109の内側
に重畳して設けられている。この画素構造において、A
−A'線に対応する縦断面図を図1に示す。FIG. 6 shows an example of a pixel array for R (red), G (green), and B (blue) color display, and shows an array of R pixels 10, G pixels 20, and B pixels 30. T for each pixel
FT13,23,33 and wiring 110-112 T
Translucent electrodes (anodes) 113 to 115 connected to the FT are provided. Colored layers of color filter 107-10
9 (R filter 107, G filter 108, B filter 109) are gate signal lines (scanning signal lines) 102 to
The data signal lines 11, 12, and 2 are located above 104.
It is formed on the lower layer side than 1, 22, 31. The boundary area between adjacent colored layers is provided so as to overlap the gate signal line and the data line signal line. The translucent electrodes 113 to 115 are provided so as to overlap with the inside of each of the colored layers 107 to 109. In this pixel structure, A
A longitudinal sectional view corresponding to line -A 'is shown in FIG.
【0029】図1において、R画素10、G画素20、
B画素30にはTFT13、23、33と、発光素子1
5、25、35が備えられ、その間に無機又は有機材料
で形成される平坦化絶縁膜105が形成されている。平
坦化絶縁膜105は平坦な表面を有し、その表面上にカ
ラーフィルターの着色層107〜109が形成されてい
る。カラーフィルターの着色層は、樹脂バインダー中の
顔料、染料を分散させたものを塗布法により形成し、光
露光工程を用いて所定のパターンに形成したものであ
る。In FIG. 1, R pixel 10, G pixel 20,
In the B pixel 30, the TFTs 13, 23 and 33 and the light emitting element 1
5, 25 and 35 are provided, and the planarization insulating film 105 made of an inorganic or organic material is formed between them. The planarization insulating film 105 has a flat surface, and coloring layers 107 to 109 of color filters are formed on the surface. The colored layer of the color filter is formed by coating a pigment and a dye in a resin binder dispersed by a coating method and forming a predetermined pattern by a light exposure process.
【0030】この着色層107〜109と平坦化絶縁膜
105との間には、窒化珪素などのバリア性の絶縁膜1
06を形成しておく。これにより、着色層に含まれる顔
料などの成分がTFT側に拡散するのを防ぐことができ
る。また、アルカリ水溶性現像液でパターン形成する際
に、平坦化絶縁膜105やその下層のTFTがアルカリ
成分で劣化するのを防ぐことができる。さらに、無機又
は有機材料から成る平坦化面上にカラーフィルターの着
色層を各色毎に形成することにより、高い位置合わせ精
度をもって各着色層を配列させることができる。尚、こ
こでいうバリア性絶縁膜の機能は、イオン性不純物、水
分、金属不純物、アルカリ金属などを遮蔽し拡散を阻止
する機能を有している。An insulating film 1 having a barrier property, such as silicon nitride, is provided between the colored layers 107 to 109 and the planarizing insulating film 105.
06 is formed. This can prevent components such as pigments contained in the colored layer from diffusing to the TFT side. Further, it is possible to prevent the flattening insulating film 105 and the TFTs thereunder from being deteriorated by an alkaline component when forming a pattern with an alkaline water-soluble developer. Furthermore, by forming the colored layers of the color filter for each color on the flattened surface made of an inorganic or organic material, the colored layers can be arranged with high alignment accuracy. The function of the barrier insulating film here has a function of blocking ionic impurities, moisture, metal impurities, alkali metals and the like to prevent diffusion.
【0031】また、平坦化絶縁膜105とTFT13、
23、33の間には窒化珪素、窒酸化珪素、窒化アルミ
ニウム、窒酸化アルミニウムから選ばれた材料で形成さ
れる無機絶縁膜103が形成される。これによりカラー
フィルターの着色層の成分などがTFT内に拡散するの
を防ぐことができる。Further, the flattening insulating film 105 and the TFT 13,
An inorganic insulating film 103 made of a material selected from silicon nitride, silicon oxynitride, aluminum nitride, and aluminum oxynitride is formed between 23 and 33. This can prevent the components of the color layer of the color filter from diffusing into the TFT.
【0032】発光素子15、25、35は、それそれ透
光性電極(陽極)113〜115と非透光性電極(陰
極)119との間に発光性を有する有機化合物層118
を形成したものである。透光性電極(陽極)113〜1
15は酸化インジウムスズ(ITO)、酸化亜鉛(Zn
O)、酸化インジウム亜鉛(IZO)など透光性導電膜
を抵抗加熱蒸着法で形成する。非透光性電極(陰極)1
18はアルカリ金属又はアルカリ土類金属のフッ化物な
どで形成する。Each of the light emitting elements 15, 25 and 35 has an organic compound layer 118 having a light emitting property between the translucent electrodes (anode) 113 to 115 and the non-translucent electrode (cathode) 119.
Is formed. Translucent electrode (anode) 113-1
15 is indium tin oxide (ITO), zinc oxide (Zn)
O), indium zinc oxide (IZO), or other light-transmitting conductive film is formed by a resistance heating evaporation method. Non-translucent electrode (cathode) 1
18 is formed of a fluoride of an alkali metal or an alkaline earth metal.
【0033】有機化合物層は様々な構成が可能である
が、陽極側にある正孔注入輸送層、陰極側にある電子注
入輸送層、発光層等を適宜組み合わせた構造となってい
る。正孔注入輸送層又は電子注入輸送層は、電極からの
正孔又は電子の注入効率と、輸送性(移動度)が特に重
要な特性として着目されるものであるが、さらに発光層
としての機能も兼ね備えた発光性電子注入輸送層なども
あるとされている。The organic compound layer can have various structures, but has a structure in which a hole injecting and transporting layer on the anode side, an electron injecting and transporting layer on the cathode side, a light emitting layer and the like are appropriately combined. The hole injecting / transporting layer or the electron injecting / transporting layer is noted as properties in which the hole or electron injecting efficiency from the electrode and the transportability (mobility) are particularly important. It is said that there is also a luminescent electron injecting and transporting layer that also has the above.
【0034】これらの有機発光媒体又は各有機層は1種
又は複数種の有機材料によって形成されるが、有機発光
材料と電子注入輸送性材料及び又は正孔注入輸送材料と
の混合物や、当該混合物若しくは有機発光材料又は金属
錯体を分散させた高分子材料などで形成されていれば良
い。These organic light emitting mediums or organic layers are formed of one or more kinds of organic materials, and a mixture of the organic light emitting material and the electron injecting / transporting material and / or the hole injecting / transporting material, or the mixture thereof. Alternatively, it may be formed of an organic light emitting material or a polymer material in which a metal complex is dispersed.
【0035】これらの各層を形成する有機化合物は、短
分子系有機化合物と高分子系有機化合物の両者が知られ
ている。短分子系有機化合物の一例は、正孔注入輸送層
として銅フタロシアニン(CuPc)芳香族アミン系材
料であるα−NPD(4,4'-ビス-[N-(ナフチル)-N-フェ
ニル-アミノ]ビフェニル)やMTDATA(4,4',4"-ト
リス(N-3-メチルフェニル-N-フェニル-アミノ)トリフェ
ニルアミン)、電子注入輸送層又は発光性電子注入輸送
層としてトリス−8−キノリノラトアルミニウム錯体
(Alq3)等が知られている。高分子系有機化合物材
料では、ポリアニリンやポリチオフェン誘導体(PED
OT)等が適用できる。As the organic compounds forming each of these layers, both short molecular organic compounds and high molecular organic compounds are known. An example of a short molecule organic compound is α-NPD (4,4′-bis- [N- (naphthyl) -N-phenyl-amino) which is a copper phthalocyanine (CuPc) aromatic amine material as a hole injecting and transporting layer. ] Biphenyl) and MTDATA (4,4 ', 4 "-tris (N-3-methylphenyl-N-phenyl-amino) triphenylamine), Tris-8- as an electron injecting / transporting layer or a luminescent electron injecting / transporting layer Known are quinolinolato aluminum complexes (Alq 3 ), etc. As polymer organic compound materials, polyaniline and polythiophene derivatives (PED) are used.
OT) etc. can be applied.
【0036】高分子系有機化合物材料で発光層を形成す
る場合には、π共役系材料を用いる。代表的な材料とし
ては、ポリパラフェニレンビニレン(PPV)系、ポリ
ビニルカルバゾール(PVK)系、ポリフルオレン系な
どである。具体的には、R画素にシアノポリフェニレン
ビニレン、G画素にシアノポリフェニレンビニレン、B
画素にシアノポリフェニレンビニレン又はポリアルキル
フェニレンを用いれば良い。尚、以上の材料は発光層と
して適用できる一例でありこれに限定される必要はな
い。勿論、白色の発光する材料で発光層を形成しても良
い。When the light emitting layer is formed of a high molecular weight organic compound material, a π-conjugated material is used. Typical materials are polyparaphenylene vinylene (PPV) type, polyvinyl carbazole (PVK) type, polyfluorene type, and the like. Specifically, the R pixel is cyanopolyphenylene vinylene, the G pixel is cyanopolyphenylene vinylene, and the B pixel is
Cyanopolyphenylene vinylene or polyalkylphenylene may be used for the pixel. The above materials are examples applicable to the light emitting layer, and the material is not limited to these. Of course, the light emitting layer may be formed of a white light emitting material.
【0037】白色発光を得る方法は、光の3原色である
R(赤)G(緑)B(青)の各色を発光する発光層を積
層して加法混色する方式と、2色の補色の関係を利用す
る方式とがある。補色を用いる場合には、青−黄色又は
青緑−橙色の組み合わせが知られている。特に、後者の
方が比較的視感度の高い波長領域の発光を利用できる点
で有利であると考えられている。As a method of obtaining white light emission, a method of stacking light emitting layers which emit respective colors of R (red), G (green) and B (blue) which are the three primary colors of light, and performing additive color mixing, and two complementary colors are used. There is a method that uses a relationship. When using complementary colors, a combination of blue-yellow or blue-green-orange is known. In particular, the latter is considered to be advantageous in that it can utilize light emission in a wavelength region having relatively high visibility.
【0038】白色発光を呈する発光素子の一例は、一対
の陰極と陽極の間に、電子注入輸送層、赤色発光層、緑
色発光層、正孔輸送層、青色発光層、第2電極を積層し
た構造である。正孔輸送層として1,2,4-トリアゾール誘
導体(p−EtTAZ)、緑色発光層として用いるトリ
ス(8−キノリラト)アルミニウム(Alq3)、青色
発光層としてTPDの青色にAlq3の緑色が混ざった
青緑色の発光が得る。この発光に赤色を加え白色発光を
実現するには赤色発光層としてAlq3かTPDのどち
らかに赤色発光色素をドープすれば良い。赤色発光色素
としてはナイルレッドなどを適用することができる。As an example of a light emitting device which emits white light, an electron injecting and transporting layer, a red light emitting layer, a green light emitting layer, a hole transporting layer, a blue light emitting layer and a second electrode are laminated between a pair of a cathode and an anode. It is a structure. 1,2,4-triazole derivative (p-EtTAZ) is used as a hole transport layer, tris (8-quinolinato) aluminum (Alq 3 ) is used as a green light emitting layer, and blue of Alq 3 is mixed with blue of TPD as a blue light emitting layer. A blue-green emission is obtained. To add red light to this light emission to achieve white light emission, it is sufficient to dope the red light emitting dye into either Alq 3 or TPD as the red light emitting layer. Nile red or the like can be applied as the red light emitting dye.
【0039】また、他の構成として、電子注入輸送層、
電子輸送層、発光層、正孔輸送層、正孔注入輸送層とす
ることもできる。この場合適した材料の組み合わせは、
電子注入輸送層としてAlq3を用い、電子輸送層とし
てフェニルアントラセン誘導体を形成する。発光層はテ
トラアリールベンジジン誘導体とフェニルアントラセン
誘導体とが体積比1:3で混合し、且つスチリルアミン
誘導体を3体積%含ませる第1発光層と、テトラアリー
ルベンジジン誘導体と10,10'−ビス[2-ビフェニルイル]
−9,9'−ビアンスリル(フェニルアントラセン誘導体)
とを体積比1:3で混合し、且つナフタセン誘導体を3
重量%含ませる第2発光層とを積層させた構成とする。
正孔輸送層はN,N,N',N'−テトラキス−(3-ビフェニル-
1-イル)ベンジジン(テトラアリールベンジジン誘導
体)を形成し、正孔注入層としてN,N'−ジフェニル-N,
N'−ビス[N-フェニル-N-4-トリル(4-アミノフェニ
ル)]ベンジジンを形成する。As another structure, an electron injecting and transporting layer,
An electron transport layer, a light emitting layer, a hole transport layer, and a hole injection transport layer can also be used. A suitable combination of materials in this case is
Alq 3 is used as the electron injecting and transporting layer, and a phenylanthracene derivative is formed as the electron transporting layer. The light emitting layer comprises a first light emitting layer in which a tetraarylbenzidine derivative and a phenylanthracene derivative are mixed at a volume ratio of 1: 3, and a styrylamine derivative is contained in an amount of 3% by volume, a tetraarylbenzidine derivative and 10,10′-bis [ 2-biphenylyl]
-9,9'-Bianthril (phenylanthracene derivative)
And a volume ratio of 1: 3, and a naphthacene derivative of 3
The second light emitting layer, which is included by weight, is laminated.
The hole transport layer is N, N, N ', N'-tetrakis- (3-biphenyl-
1-yl) benzidine (tetraarylbenzidine derivative) is formed, and N, N'-diphenyl-N,
N'-Bis [N-phenyl-N-4-tolyl (4-aminophenyl)] benzidine is formed.
【0040】また、他の構成として、電子注入輸送層と
して電子輸送性の高いAlq3を用い、その上に高分子
系有機発光媒体を用い、TAZ及びPVK(ポリ(N-ビ
ニルカルバゾール))を形成した3層構造とする。注入
された電子及び正孔の再結合はPVKで起こり、短波長
にピークを持つカルバゾール基が励起され発光する。こ
れに長波長光の発光を加えるために適当な色素をドープ
すると白色発光を得ることができる。例えば、1,1,4,4-
テトラフェニル-1,3-ブタジエニン(TPB)を2〜3m
ol%ドープすることにより450nmの発光が得られ、緑
や赤もクマリン6やDCM1をドープすることにより得
ることができる。いずれにしても白色発光を得るには多
種の色素をPVK中にドープして可視光域全体をカバー
すれば良い。この構造において、電子注入輸送層203
を無機電子注入輸送層を用いても良い。無機電子輸送層
としてはn型化したダイヤモンドライクカーボン(DL
C)を適用することができる。DLC膜のn型化には燐
などを適宜ドープすれば良い。その他に、アルカリ金属
元素、アルカリ土類金属元素、及びランタノイド系元素
から選択される一種の酸化物と、Zn、Sn、V、R
u、Sm、Inから選択される1種以上の無機材料を適
用することができる。As another structure, Alq 3 having a high electron transporting property is used as an electron injecting and transporting layer, a polymer organic light emitting medium is used thereon, and TAZ and PVK (poly (N-vinylcarbazole)) are used. The formed three-layer structure is used. Recombination of the injected electrons and holes occurs in PVK, and the carbazole group having a peak at a short wavelength is excited to emit light. White light emission can be obtained by doping a suitable dye for adding long-wavelength light emission. For example, 1,1,4,4-
Tetraphenyl-1,3-butadienin (TPB) 2-3m
Emission of 450 nm is obtained by ol% doping, and green and red can be obtained by doping coumarin 6 and DCM1. In any case, in order to obtain white light emission, various dyes may be doped into PVK to cover the entire visible light range. In this structure, the electron injection transport layer 203
Alternatively, an inorganic electron injecting and transporting layer may be used. As the inorganic electron transport layer, n-type diamond-like carbon (DL
C) can be applied. To make the DLC film n-type, phosphorus or the like may be appropriately doped. In addition, one kind of oxide selected from alkali metal elements, alkaline earth metal elements, and lanthanoid elements, Zn, Sn, V, and R
One or more inorganic materials selected from u, Sm and In can be applied.
【0041】また、他の構成として、4,4'-ビス-[N-(ナ
フチル)-N-フェニル-アミノ]ビフェニル(α−NPD)
のみから成る正孔注入輸送層を形成し、その上にα−N
PDと電子輸送性材料であるBAlqを混合させた発光
層を形成し、その上にBAlqのみから成る電子注入輸
送層を形成した構成としても良い。この発光層は青色の
発光をするので、第2の発光材料として黄色蛍光色素で
あるルブレンを添加した領域を形成する。これにより白
色発光を得ることができる。As another constitution, 4,4'-bis- [N- (naphthyl) -N-phenyl-amino] biphenyl (α-NPD)
A hole injecting and transporting layer consisting of only N is formed, and α-N is formed thereon.
It is also possible to form a light emitting layer in which PD and BAlq that is an electron transporting material are mixed, and to form an electron injecting and transporting layer composed only of BAlq on the light emitting layer. Since this light-emitting layer emits blue light, it forms a region to which rubrene, which is a yellow fluorescent dye, is added as the second light-emitting material. Thereby, white light emission can be obtained.
【0042】いずれにしても、視覚的に自然な白色発光
を実現し、より高品質な多色表示をしようとする場合に
は、各色に発光する有機発光素子とカラーフィルターの
組み合わせを最適化して色バランスを考慮する必要があ
る。また、発光輝度が経時変化する場合に対応して駆動
回路側で便宜を図る必要がある。In any case, in order to realize visually natural white light emission and to achieve higher quality multicolor display, the combination of the organic light emitting element emitting each color and the color filter is optimized. It is necessary to consider the color balance. Further, it is necessary for the drive circuit side to provide convenience in response to the case where the emission luminance changes with time.
【0043】2色の補色の関係を利用する方式では、青
−黄色又は青緑−橙色の組み合わせが通常適用されるの
で、それぞれに色の光を発光する有機発光素子が経時変
化により劣化することにより色バランスが崩れるといっ
た問題点がある。また、それぞれの有機発光素子の発光
効率が違うので、同じ駆動電圧又は駆動電流を印加する
のでは色バランスが崩れるといった問題点がある。In the method utilizing the relationship of the two complementary colors, a combination of blue-yellow or blue-green-orange is usually applied, and therefore, the organic light-emitting element which emits light of each color is deteriorated with time. Therefore, there is a problem that the color balance is lost. In addition, since the light emitting efficiency of each organic light emitting element is different, there is a problem in that the color balance is lost if the same driving voltage or driving current is applied.
【0044】通常はカラーフィルターの着色層の厚さを
変えて透過光量を制御したり、画素の面積を変えて光量
を制御したりする方法がある。しかし、着色層の厚さを
変える場合には数μmの割合でその厚さを変える必要が
あり、対向基板として固着する場合に平坦化膜を厚くす
るかシール材の厚さを厚くする必要があり、封止構造に
おける信頼性を損なう可能性がある。また、画素の面積
を変える場合には、TFTの配置やサイズに制限があ
り、面積を有効に活用できないという弊害がある。Usually, there is a method of controlling the amount of transmitted light by changing the thickness of the colored layer of the color filter or controlling the amount of light by changing the area of the pixel. However, when changing the thickness of the colored layer, it is necessary to change the thickness at a rate of several μm, and when fixing as a counter substrate, it is necessary to increase the thickness of the flattening film or the thickness of the sealing material. There is a possibility that the reliability of the sealing structure will be impaired. Further, when the area of the pixel is changed, there is a problem that the arrangement and size of the TFT are limited and the area cannot be effectively used.
【0045】隔壁層116は隣接する画素を分離するた
めのものであり、また透光性電極113〜115の端部
で発光素子が短絡不良を起こすのを防いでいる。この形
態において適した有機化合物層の構成は、PEDOT/
PSSのような導電性ポリマー117を全面に塗布し、
その上に発光層を含む有機化合物層118を形成したも
のである。この場合、導電性ポリマー117の厚さ形状
は、隔壁116の影響によりその上部で薄く、隔壁層1
16の端部(即ち、隔壁層と透光性電極の接する部分)
で厚くなる。これにより隔壁層上部における横方向の抵
抗が高くなり、クロストークを防ぐことができる。さら
に当該端部近傍においてが厚くなるため、電界集中を緩
和し、画素端部からの劣化を防ぐことができる。またこ
こにPEDOT/PSSのような導電性ポリマーを用い
ることにより、正孔注入特性が改善され、発光効率を向
上させることができる。The partition layer 116 is for separating adjacent pixels, and also prevents the light emitting element from causing a short circuit defect at the end portions of the translucent electrodes 113 to 115. A suitable organic compound layer configuration in this form is PEDOT /
Apply a conductive polymer 117 such as PSS to the entire surface,
An organic compound layer 118 including a light emitting layer is formed thereon. In this case, the thickness shape of the conductive polymer 117 is thin above the partition wall 116 due to the influence of the partition wall 116.
16 ends (that is, the portion where the partition layer and the translucent electrode are in contact)
Thickens. This increases the lateral resistance in the upper part of the partition layer and prevents crosstalk. Further, since the thickness becomes thicker in the vicinity of the end portion, electric field concentration can be relaxed and deterioration from the pixel end portion can be prevented. Further, by using a conductive polymer such as PEDOT / PSS here, the hole injection characteristics are improved and the light emission efficiency can be improved.
【0046】そして、発光素子15、25、35は、配
線110〜112は、着色層107〜109、平坦化絶
縁膜105、106を貫通してTFT13、23、33
とそれぞれ接続している。In the light emitting elements 15, 25 and 35, the wirings 110 to 112 penetrate the colored layers 107 to 109 and the planarization insulating films 105 and 106, and the TFTs 13, 23 and 33.
Is connected to each.
【0047】さらに非透光性電極119上には保護膜1
20を窒化珪素又はダイヤモンドライクカーボン、水素
化又はハロゲン化された、アモルファスカーボン(a−
C:H)膜、アモルファスシリコン(a−Si)膜、ダ
イヤモンドライクカーボン(DLC)膜、アモルファス
窒化シリコン膜などで被覆すると共に、これらの被膜を
プラズマCVD法により形成して、プラズマ中の水素又
はハロゲンにより有機化合物層を水素又はハロゲン化し
て欠陥を補償し、安定化させることができる。Further, the protective film 1 is formed on the non-translucent electrode 119.
20 is silicon nitride or diamond-like carbon, hydrogenated or halogenated amorphous carbon (a-
C: H) film, amorphous silicon (a-Si) film, diamond-like carbon (DLC) film, amorphous silicon nitride film, etc., and at the same time, these films are formed by the plasma CVD method, and hydrogen in plasma or By using halogen, the organic compound layer can be hydrogenated or halogenated to compensate for and stabilize defects.
【0048】発光素子で発光する光は、カラーフィルタ
ーの着色層を透過して、基板101側から放射され視認
することができる。基板は発光光を透過するものであれ
ば様々なものが適用可能である。ガラスでは市販されて
いる無アルカリガラスなどの透明ガラスが好ましく、表
面を酸化珪素膜で被覆したアルカリガラスを適用するこ
ともできる。プラスチックを用いる場合には、ポリエチ
レンナフタレート(PEN)、ポリエチレンテレフタレ
ート(PET)、ポリエーテルサルフォン(PES)、
透光性のポリイミドなどを適用することができる。その
他、透光性アルミナ、ZnS焼結体などの透明セラミッ
クを適用することもできる。基板の形態は板状物、フィ
ルム状物、シート状物のいずれの形態であっても良く、
単層構造又は積層構造のいずれの構造を有していても良
い。The light emitted from the light emitting element passes through the colored layer of the color filter, is emitted from the substrate 101 side and can be visually recognized. Various substrates can be applied as long as they can transmit emitted light. As the glass, a transparent glass such as a commercially available non-alkali glass is preferable, and an alkali glass whose surface is coated with a silicon oxide film can also be applied. When using plastics, polyethylene naphthalate (PEN), polyethylene terephthalate (PET), polyether sulfone (PES),
A light-transmitting polyimide or the like can be applied. In addition, transparent ceramics such as translucent alumina and ZnS sintered body can be applied. The form of the substrate may be any of a plate-like material, a film-like material, and a sheet-like material,
It may have either a single-layer structure or a laminated structure.
【0049】発光性を有する有機化合物層を発光させる
場合、その分光スペクトルは比較的広い波長範囲に渡っ
て分布して色純度が低下する。これを補正するためにカ
ラーフィルターを用いることで、その色純度を向上させ
ることが可能となる。勿論、発光素子が白色に発光する
場合には、このカラーフィルターによりカラー表示を行
うことができる。さらに、カラーフィルターを設けるこ
とで、非透光性電極の光反射により、図5で示すような
形態の発光装置において、画素部が鏡面化するのを防ぐ
ことができる。When the organic compound layer having a light emitting property is caused to emit light, its spectral spectrum is distributed over a relatively wide wavelength range and the color purity is lowered. By using a color filter to correct this, the color purity can be improved. Of course, when the light emitting element emits white light, color display can be performed by this color filter. Further, by providing the color filter, it is possible to prevent the pixel portion from being mirror-finished in the light emitting device having the configuration shown in FIG. 5 due to the light reflection of the non-translucent electrode.
【0050】図4は図1の構成において、バリア性の絶
縁膜121を着色層107〜109上に形成した例を示
している。着色層上にバリア性の絶縁膜121を形成す
ることにより、以降の工程において着色層に傷が付きに
くくなり、また顔料成分が発光素子に拡散して素子を劣
化させるのを防ぐことができる。FIG. 4 shows an example in which the barrier insulating film 121 is formed on the colored layers 107 to 109 in the structure of FIG. By forming the barrier insulating film 121 on the colored layer, the colored layer is less likely to be scratched in the subsequent steps, and the pigment component can be prevented from diffusing into the light emitting element and deteriorating the element.
【0051】一方、カラーフィルターの着色層の表面に
は微細な突起や、隣接する着色層どうしが重なり合う境
界領域は、その厚さが他の領域より厚くなり凸部が形成
される。特に前者が発光素子形成領域上、即ち画素面内
にあるとそれに起因して短絡不良、黒点不良など好まし
くない現象が発生し、特に高精細の表示画面を形成する
場合においては表示品質の低下をもたらす原因となる。On the other hand, on the surface of the colored layer of the color filter, fine projections or a boundary region where adjacent colored layers overlap with each other have a thickness thicker than other regions and a convex portion is formed. Particularly when the former is on the light emitting element formation region, that is, in the pixel surface, undesired phenomena such as short circuit failure and black dot failure occur due to it, and particularly when forming a high-definition display screen, display quality is deteriorated. Cause to bring.
【0052】図2(A)は、無機又は有機絶縁材料によ
る平坦化絶縁膜105及びバリア性の絶縁膜106上に
着色層107〜109が形成され、前述の突起や凸部が
形成された状態を示している。前述の突起や凸部を除去
するためには、着色層を形成した後、機械的研磨、又は
スラリーなどを併用して化学的機械研磨により突起や凸
部を取り除いてしまうことが望ましい。図2(B)は研
磨後の状態を示している。FIG. 2A shows a state in which the colored layers 107 to 109 are formed on the flattening insulating film 105 and the barrier insulating film 106 made of an inorganic or organic insulating material, and the above-mentioned protrusions and projections are formed. Is shown. In order to remove the above-mentioned protrusions and protrusions, it is desirable to remove the protrusions and protrusions by mechanical polishing or chemical mechanical polishing in combination with slurry after forming the colored layer. FIG. 2B shows a state after polishing.
【0053】この状態で着色層のピンホール、ひび割
れ、欠け、パターンずれなどの検査を行い、不良品を選
別して再加工を行うことができる。In this state, the colored layer can be inspected for pinholes, cracks, chips, pattern shifts, etc., and defective products can be selected and reprocessed.
【0054】その後、図3(A)に示すように窒化珪素
などで形成するバリア性の無機絶縁膜121を、シリコ
ンをターゲットとした高周波スパッタリング法で形成す
る。この窒化珪素膜を形成することで、着色層に含まれ
る顔料などの不純物が発光素子の有機化合物層に拡散
し、素子特性を劣化させるのを防ぐことができる。After that, as shown in FIG. 3A, a barrier inorganic insulating film 121 made of silicon nitride or the like is formed by a high frequency sputtering method using silicon as a target. By forming this silicon nitride film, it is possible to prevent impurities such as pigment contained in the coloring layer from diffusing into the organic compound layer of the light emitting element and deteriorating the element characteristics.
【0055】図3(B)は発光素子まで形成した状態で
あり、その構成は図1と同様である。差異として、PE
DOT/PSSのような導電性ポリマー117上に形成
する発光層を含む有機化合物層118を、赤色発光用有
機化合物層130、緑色発光用有機化合物層131、青
色発光用有機化合物層132と個別に形成しても良い。
非透光性電極(陰極)119と保護膜120の構成は図
1と同様である。FIG. 3B shows a state in which even the light emitting element is formed, and its configuration is the same as that in FIG. The difference is PE
An organic compound layer 118 including a light emitting layer formed on a conductive polymer 117 such as DOT / PSS is separately provided from a red light emitting organic compound layer 130, a green light emitting organic compound layer 131, and a blue light emitting organic compound layer 132. You may form.
The configurations of the non-translucent electrode (cathode) 119 and the protective film 120 are the same as in FIG.
【0056】[0056]
【発明の効果】以上のように本発明において発光装置が
基板上にTFT、カラーフィルター、発光素子が組み合
わされ一体形成され、最高温度プロセスはTFTの構成
部材である半導体層を結晶化させる600℃程度の温
度、又は水素化を行う350〜450℃の温度であり、
即ち平坦化膜の形成前である。従って、耐熱性が200
℃程度しかないカラーフィルターの着色層は何ら問題な
く作り込むことができる。また、TFT工程とカラーフ
ィルター工程との歩留まりが積算されることなく、高精
細で且つ製造コストの低減を可能とする発光装置を提供
することができる。As described above, in the present invention, the light emitting device is integrally formed on the substrate by combining the TFT, the color filter and the light emitting element, and the maximum temperature process is 600 ° C. for crystallizing the semiconductor layer which is a constituent member of the TFT. Or a temperature of 350 to 450 ° C. at which hydrogenation is performed,
That is, before the flattening film is formed. Therefore, the heat resistance is 200
The colored layer of the color filter having a temperature of only about ℃ can be formed without any problem. Further, it is possible to provide a light emitting device which has high definition and can reduce the manufacturing cost without accumulating the yields of the TFT process and the color filter process.
【図1】 本発明のカラーフィルター着色層を備えた発
光装置の構成を示す縦断面図。FIG. 1 is a vertical cross-sectional view showing the configuration of a light emitting device including a color filter colored layer of the present invention.
【図2】 本発明のカラーフィルター着色層を備えた発
光装置の作製工程を示す縦断面図。FIG. 2 is a vertical cross-sectional view showing a manufacturing process of a light emitting device having a color filter colored layer of the present invention.
【図3】 本発明のカラーフィルター着色層を備えた発
光装置の作製工程を示す縦断面図。FIG. 3 is a vertical cross-sectional view showing a manufacturing process of a light emitting device having a color filter colored layer of the present invention.
【図4】 本発明のカラーフィルター着色層を備えた発
光装置の構成を示す縦断面図。FIG. 4 is a vertical cross-sectional view showing the configuration of a light emitting device including a color filter colored layer of the present invention.
【図5】 発光装置の構成を示す上面図。FIG. 5 is a top view illustrating a structure of a light emitting device.
【図6】 本発明のカラーフィルター着色層を備えた発
光装置の画素の構成を示す上面図。FIG. 6 is a top view showing a pixel configuration of a light emitting device including a color filter colored layer of the present invention.
Claims (5)
ルターの着色層と、一対の電極間に発光性を有する有機
化合物層が形成された発光素子とを有し、前記カラーフ
ィルターの着色層は、前記薄膜トランジスタの上層にお
いて無機又は有機材料で形成される絶縁膜の平坦面上に
形成され、前記発光素子の発光は、前記着色層を通して
放射されることを特徴とする発光装置。1. A thin film transistor on a substrate, a colored layer of a color filter, and a light emitting element in which an organic compound layer having a light emitting property is formed between a pair of electrodes, wherein the colored layer of the color filter is A light emitting device, which is formed on a flat surface of an insulating film formed of an inorganic or organic material in an upper layer of a thin film transistor, and light emitted from the light emitting element is emitted through the colored layer.
有機材料から成る平坦化絶縁膜が形成され、前記絶縁膜
の平坦面上にカラーフィルターの着色層が設けられ、前
記着色層上に、一対の電極間に発光性を有する有機化合
物層が形成された発光素子が設けられ、前記発光素子の
発光は、前記着色層を通して放射されることを特徴とす
る発光装置。2. A flattening insulating film made of an inorganic or organic material covering a thin film transistor is formed on a substrate, a colored layer of a color filter is provided on a flat surface of the insulating film, and a pair of colored layers is provided on the colored layer. A light-emitting device comprising a light-emitting element in which an organic compound layer having a light-emitting property is formed between electrodes, and light emitted from the light-emitting element is emitted through the colored layer.
有機材料から成る平坦化絶縁膜が形成され、前記絶縁膜
の平坦面上にカラーフィルターの着色層が設けられ、前
記着色層上に、一対の電極間に発光性を有する有機化合
物層が形成された発光素子が設けられ、前記薄膜トラン
ジスタと前記発光素子は、前記絶縁膜及び着色層を貫通
する配線により電気的に接続され、前記発光素子の発光
は、前記着色層を通して放射されることを特徴とする発
光装置。3. A flattening insulating film made of an inorganic or organic material covering a thin film transistor is formed on a substrate, a colored layer of a color filter is provided on a flat surface of the insulating film, and a pair of colored layers is provided on the colored layer. A light emitting element in which an organic compound layer having a light emitting property is formed between electrodes is provided, the thin film transistor and the light emitting element are electrically connected by a wiring penetrating the insulating film and the coloring layer, and the light emission of the light emitting element is performed. Is emitted through the colored layer.
層が形成された発光素子と薄膜トランジスタとがマトリ
クス状に配列して画素部が形成され、各画素に対応して
設けられるカラーフィルターの着色層は、前記発光素子
と薄膜トランジスタとの間にある無機又は有機材料から
成る平坦化絶縁膜の平坦面に接して設けられ、隣接する
着色層の境界領域は、前記薄膜トランジスタに信号を送
るゲート信号線又はデータ信号線と重畳して設けられて
いることを特徴とする発光装置。4. A color filter provided corresponding to each pixel in which a light emitting element in which an organic compound layer having a light emitting property is formed between a pair of electrodes and a thin film transistor are arranged in a matrix to form a pixel portion. The colored layer is provided in contact with a flat surface of a planarization insulating film made of an inorganic or organic material between the light emitting element and the thin film transistor, and a boundary region between adjacent colored layers is a gate signal which sends a signal to the thin film transistor. A light-emitting device, which is provided so as to overlap with a line or a data signal line.
一対の電極間に発光性を有する有機化合物層が形成され
た発光素子と薄膜トランジスタとがマトリクス状に配列
して画素部が形成され、各画素に対応して設けられるカ
ラーフィルターの着色層は、前記発光素子と薄膜トラン
ジスタとの間にある無機又は有機材料から成る平坦化絶
縁膜の平坦面に接して設けられ、隣接する着色層の境界
領域は、前記薄膜トランジスタに信号を送るゲート信号
線又はデータ信号線と重畳して設けられ、前記透光性の
電極は、前記着色層の内側に重畳して設けられているこ
とを特徴とする発光装置。5. A pixel portion in which light-emitting elements each having a light-emitting organic compound layer formed between a pair of electrodes including a light-transmitting electrode and a non-light-transmitting electrode and thin film transistors are arranged in matrix. The colored layer of the color filter provided corresponding to each pixel is formed in contact with the flat surface of the flattening insulating film made of an inorganic or organic material between the light emitting element and the thin film transistor, and is adjacent to the flat surface. A boundary region of the colored layer is provided so as to overlap with a gate signal line or a data signal line for sending a signal to the thin film transistor, and the light-transmitting electrode is provided so as to overlap with the inside of the colored layer. Characterized light emitting device.
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