JP2010249883A - Image display device and correction method for the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an image display device capable of securing high display quality in all kinds of display images and to provide a correction method for the image display device. <P>SOLUTION: The image display device 1 has a display panel where a plurality of light emitting pixels are arranged like a matrix. A light emitting pixel 11P which is abnormally operated when a drive circuit is formed and a light emitting pixel 11Q which is adjacent to the light emitting pixel 11P or has the same color as that of the light emitting pixel 11P, which is normally operated when the drive circuit is formed have a drive circuit layer 11A having a drive transistor 22 performing conversion into a current between a source and a drain corresponding to a signal voltage supplied from a signal line 12 arranged in each pixel row by applying the signal voltage to a gate and a light emitting layer 11B emitting light by making the current flow between the source and the drain. The display panel has a jumper line 16 directly connecting the gate terminal of the drive transistor 22 that the light emitting pixel 11P has and the gate terminal of the drive transistor 22 that the light emitting element 11Q has. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to an image display device and a correction method thereof, and more particularly to an image display device having a drive circuit for each pixel and a correction method thereof.

  As an image display device using a current-driven light emitting element, an organic EL display using an organic electroluminescence element (hereinafter referred to as an organic EL element) is known. Since this organic EL display has the advantages of good viewing angle characteristics and low power consumption, it has attracted attention as a next-generation FPD (Flat Pan Display) candidate.

  Usually, the organic EL elements constituting the pixels are arranged in a matrix. For example, in an active matrix organic EL display, a thin film transistor (TFT) is provided at the intersection of a plurality of scanning lines and a plurality of data lines, and a storage capacitor element (capacitor) and a gate of a driving transistor are provided in the TFT. And a compensation circuit are connected. Then, the TFT is turned on through the selected scanning line, and a data signal or the like from the data line is input to the driving transistor, the holding capacitor element and the compensation circuit, and the organic EL element emits light by the driving transistor, the holding capacitor element and the compensation circuit. Control brightness and light emission timing. With this pixel drive circuit configuration, in an active matrix organic EL display, the organic EL element can emit light until the next scanning (selection), so that even if the duty ratio is increased, the luminance of the display is reduced. There is nothing wrong.

  However, in the conventional organic EL panel, if any one of the elements and wirings constituting the pixel driving circuit is abnormal, an accurate signal voltage may not be supplied to the gate of the driving transistor. This causes a problem that the drive transistor continues to flow an abnormal current value (bright spot) or does not flow current (dark spot). This is a problem peculiar to an active matrix type organic EL display that requires a complicated pixel drive circuit configuration. In addition, as the pixel drive circuit configuration becomes more complicated and the number of light emitting pixels increases, the thin film stack structure needs to be miniaturized. appear.

  In order to improve this, from the viewpoint that the dark spot is less conspicuous than the bright spot, a part of the pixel drive circuit is cut by laser processing or the like, and the drive element is not driven to darken the bright spot. It is common.

  Patent Document 1 proposes a method of correcting a light emitting pixel in which a defect has occurred when forming a pixel driving circuit element or wiring. In order to correct defective light-emitting pixels that are always in a light-emitting state due to a short circuit of a circuit element or the like, a non-overlapping portion electrically connected apart from other conductive portions and wirings is provided in all light-emitting pixel regions. It has been. For the defective light emitting pixels, the non-overlapping portion is cut by irradiating the non-overlapping portion with laser. As a result, the defective pixel is blocked from transmission of electrical signals, and is darkened without being damaged by laser irradiation.

  As a result, it is possible to prevent deterioration in display quality due to defective pixels that have become bright spots.

JP 2008-203636 A

  However, as represented by the correction method of the image display device described in Patent Document 1, in the method of darkening defective pixels that have been brightened, dark dots remain after correction. In this case, for a bright display image, a dark dot pixel exists in the bright display image, so the display quality is not improved, but rather the display quality is deteriorated by correcting the dark dot.

  The present invention has been made in view of the above problems, and an object of the present invention is to provide an image display device capable of ensuring high display quality in any display image and a correction method thereof.

  In order to solve the above problems, a semiconductor device of the present invention is an image display device having a display panel in which a plurality of light emitting pixels are arranged in a matrix, and each of the plurality of light emitting pixels has a signal voltage. The display panel includes: a drive transistor that generates a source-drain current corresponding to the signal voltage by being applied to a gate; and a light-emitting element that emits light when the source-drain current flows. One or more jumper lines that directly connect the gate terminal of the driving transistor included in the light emitting pixel and the gate terminal of the driving transistor included in the other light emitting pixel, and the gate terminal of the driving transistor included in the one light emitting pixel include The signal voltage corresponding to the one light emitting pixel is not applied, and the gate of the driving transistor included in the other light emitting pixel is not applied. The terminal, characterized in that the other signal voltage corresponding to the light emitting pixels is applied.

  According to this configuration, the gate terminal of the drive transistor of the light emitting pixel that was abnormal in operation when the drive circuit was formed is directly connected to the gate terminal of the drive transistor of the normal light emitting pixel having the drive circuit operating normally by the jumper line. ing. As a result, the signal voltage supplied to the gate of the drive transistor of the normal light emitting pixel is supplied to the gate of the drive transistor of the light emitting pixel that has malfunctioned. Therefore, the light emission operation of the light emitting pixel in a state where a signal voltage is not supplied to the gate terminal of the drive transistor due to a failure in a circuit element or wiring other than the drive transistor when the drive circuit is formed is referred to as the normal light emission pixel. The same light emission operation can be performed. That is, it is possible to avoid the darkening of the light emitting pixels and to ensure high display quality in any display image.

  Further, in the one light emitting pixel among the two light emitting pixels having the driving transistor directly connected by the jumper line, the gate terminal of the driving transistor included in the light emitting pixel is another circuit in the light emitting pixel. The connection between the element and the signal line is preferably cut off.

  Thereby, even in the case where an abnormal signal is supplied to the gate of the driving transistor due to the abnormal operation of the circuit elements constituting the light emitting pixel in the light emitting pixel which is abnormal in operation when the driving circuit is formed, It is possible to perform the same light emitting operation as that of the normal light emitting pixel connected to the jumper line.

  In other words, not only the luminescent pixels but also the bright spots are avoided, and high display quality can be ensured in all display images.

  The two light emitting pixels having the driving transistor directly connected by the jumper line are preferably light emitting pixels of the same color.

  As a result, darkening and brightening of the light emitting pixel, which was abnormal in operation when the drive circuit was formed, are avoided, and the light emitting pixel is compared with a case where it is connected to a light emitting pixel displaying another color. It is possible to reduce the conspicuousness of the luminescence.

  Further, it is preferable that the two light emitting pixels having the driving transistor directly connected by the jumper line are adjacent light emitting pixels.

  As a result, it is possible to avoid a dark spot and a bright spot of a light emitting pixel that is abnormal in operation at the time of forming the drive circuit, and further, a light emitting state equivalent to that of an adjacent light emitting pixel is obtained. Conspicuousness can be reduced. Furthermore, since the jumper line can be formed in the shortest time, the correction process by forming the jumper line can be shortened.

  The jumper wire is preferably a metal wiring formed by a laser beam CVD method.

  Thereby, the jumper line can be formed at an arbitrary position and can be formed at high speed. Moreover, since the jumper line formation and the opening formation on the gate terminal surface necessary before the jumper line formation can be performed using the same laser source, the process of correcting the light emitting pixels can be simplified. Is possible.

  In addition, the present invention can be realized not only as an image display device having such characteristic means, but also by forming the jumper line at the manufacturing stage or after completion of the above-described image display device. This can be realized as a method of correcting the display device.

  Specifically, in the method for correcting a semiconductor device of the present invention, a drive circuit layer having a drive transistor that converts a source-drain current corresponding to the signal voltage when a signal voltage is applied to a gate; and the source A method of correcting an image display device in which a plurality of light emitting pixels each having a light emitting element having a light emitting element that emits light when a drain-to-drain current flows is arranged in a matrix, wherein the light emission is performed when the drive circuit layer is formed; An inspection step for inspecting all light emitting pixels whether the signal voltage corresponding to the light emitting pixel is normally applied to the gate terminal of the driving transistor included in the pixel, and the signal voltage corresponding to the light emitting pixel in the inspection step A first opening is formed on the surface of the gate terminal of the drive transistor of the first light emitting pixel that is determined to be not normally applied. A second opening is formed on the surface of the gate terminal of the driving transistor of the second light emitting pixel, which is determined in the first opening step and the inspection step that the signal voltage corresponding to the light emitting pixel is normally applied. A second opening step to be formed; a gate terminal of the driving transistor of the first light emitting pixel and a gate terminal of the driving transistor of the second light emitting pixel through the first opening and the second opening; And a wiring direct connection step for forming a jumper line directly connecting the two.

  According to this method, when a drive circuit is formed, a fault occurs in a circuit element or wiring other than the drive transistor, so that no signal voltage is supplied to the gate terminal of the drive transistor, or abnormal light emission in which an abnormal signal is supplied. The pixel is directly connected to the gate terminal of the driving transistor of the normal light emitting pixel by a jumper line. Accordingly, since the signal voltage supplied to the gate of the drive transistor of the normal light emitting pixel is supplied to the gate of the drive transistor of the abnormal light emission pixel, the abnormal light emission pixel emits the same light as the normal light emission pixel. Can be done.

  Therefore, it is possible to avoid dark spots and bright spots of the luminescent pixels, and to ensure high display quality in all display images.

  According to the image display device and the correction method thereof of the present invention, the gate terminal of the drive transistor of the light emitting pixel that was abnormal in operation when the drive circuit was formed is directly connected to the gate terminal of the drive transistor of the normal light emitting pixel by the jumper line. Therefore, the bright spot or dark spot state of the luminescent pixel that has been abnormal in operation is avoided, and high display quality can be ensured in any display image.

(A) is a block diagram which shows the structure of the image display apparatus which concerns on embodiment of this invention. (B) is a main circuit block diagram of the luminescent pixel which concerns on embodiment of this invention. (A) is a circuit block diagram of two light emitting pixels connected by the jumper line based on embodiment of this invention. (B) is an example of a cross-sectional view of two light-emitting pixels connected by jumper wires according to an embodiment of the present invention. It is sectional drawing explaining the correction method of the image display apparatus which concerns on embodiment of this invention. It is an operation | movement flowchart which shows the correction method of the image display apparatus which concerns on embodiment of this invention. 1 is an external view of a thin flat TV incorporating an image display device of the present invention.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following embodiments and drawings, the same components will be described with the same reference numerals. In the following, an image display device composed of an organic EL element having a top emission type anode (anode) on the bottom surface and a cathode (cathode) on the top surface will be described as an example. However, the present invention is not limited to this.

(Embodiment)
The image display device in this embodiment includes a display panel in which a plurality of light-emitting pixels are arranged in a matrix, and a signal voltage supplied from a signal line is applied to a gate of each of the plurality of light-emitting pixels. Accordingly, the display panel includes a driving transistor that converts a source-drain current corresponding to a signal voltage, and a light-emitting element that emits light when the source-drain current flows. One or more jumper lines that directly connect the gate terminal of the transistor and the gate terminal of the driving transistor of another light emitting pixel are provided. Thus, it becomes possible to supply the signal voltage supplied to the gate of the drive transistor of the light emitting pixel that operates normally to the gate of the drive transistor of the light emitting pixel that operates abnormally when the drive circuit is formed. It is possible to emit the same light as the normal light emitting pixels. Therefore, it is possible to avoid the darkening of the light emitting pixels, and to ensure high display quality in any display image.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.
FIG. 1A is a block diagram showing a configuration of an image display apparatus according to an embodiment of the present invention. The image display device 1 in FIG. 1 includes a display panel 10 and a control circuit 20. The display panel 10 includes a plurality of light emitting pixels 11, a plurality of signal lines 12 arranged for each light emitting pixel column, a plurality of scanning lines 13 arranged for each light emitting pixel row, a scanning line driving circuit 14, and a signal. A line driving circuit 15.

The light emitting pixels 11 are arranged in a matrix on the display panel 10.
The scanning line driving circuit 14 outputs a scanning signal to each scanning line 13 to drive circuit elements included in the light emitting pixels.

  The signal line driver circuit 15 outputs a signal voltage and a reference voltage to the signal line 12, thereby realizing light emission of the light emitting pixels corresponding to the luminance signal.

  The control circuit 20 controls the output timing of the scanning signal output from the scanning line driving circuit 14. Further, the control circuit 20 controls the timing at which the signal voltage output from the signal line driving circuit 15 is output.

  FIG. 1B is a main circuit configuration diagram of the light emitting pixel according to the embodiment of the present invention. The light emitting pixel 11 shown in the figure includes a drive circuit layer 11A and a light emitting layer 11B. The drive circuit layer 11A includes, for example, a switching transistor 21 made of Nch-FET, a drive transistor 22 made of Pch-FET, and a storage capacitor 23. The drain electrode of the switching transistor 21 is connected to the signal line 12, the gate electrode of the switching transistor 21 is connected to the scanning line 13, and the source electrode of the switching transistor 21 is connected to the storage capacitor 23 and the gate electrode of the driving transistor 22. Yes. The drain electrode of the drive transistor 22 is connected to the power supply Vdd, and the source electrode is connected to the anode of the light emitting layer 11B.

  In this configuration, when a scanning signal is input to the scanning line 13 and the switching transistor 21 is turned on, the signal voltage supplied via the signal line 12 is written to the storage capacitor 23. The holding voltage written in the holding capacitor 23 is held for one frame period, and this holding voltage changes the conductance of the driving transistor 22 in an analog manner, and the driving current corresponding to the light emission gradation is applied to the light emitting layer 11B. Supplied to the anode. Further, the drive current supplied to the anode of the light emitting layer 11B flows to the organic EL element 24 and the cathode of the light emitting layer 11B. Thereby, the organic EL element 24 of the light emitting layer 11B emits light and is displayed as an image.

  The drive circuit layer 11A is not limited to the circuit configuration described above. That is, the switching transistor 21, the drive transistor 22, and the storage capacitor 23 are circuit components necessary for flowing a drive current corresponding to the voltage value of the luminance signal to the light emitting layer 11B, but are not limited to the above-described form. Further, a case where another circuit component is added to the circuit components described above is also included in the drive circuit layer 11A according to the present invention.

  FIG. 2A is a circuit configuration diagram of two light emitting pixels connected by jumper lines according to an embodiment of the present invention. The image display device 1 described in the figure includes light emitting pixels 11P and 11Q. The light emitting pixel 11Q is a light emitting pixel that operates normally when the drive circuit layer 11A is formed. On the other hand, the light emitting pixel 11P is a light emitting pixel that is determined to be abnormal in operation due to a defect in circuit elements or wirings other than the driving transistor 22 constituting the driving circuit layer 11A when the driving circuit layer 11A is formed.

  On the other hand, before the formation of the light emitting layer 11B, the gate wiring 17 of the driving transistor 22 of the light emitting pixel 11P is cut, and the gate terminal of the driving transistor 22 of the light emitting pixel 11P and the gate terminal of the driving transistor 22 of the light emitting pixel 11Q are connected. Are directly connected by a jumper wire 16.

  FIG. 2B is an example of a cross-sectional view of two light emitting pixels connected by jumper lines according to the embodiment of the present invention. The light emitting pixels 11P and 11Q described in the figure include a substrate 100, a drive circuit layer 11A, a light emitting layer 11B, and a transparent sealing film 110.

  The substrate 100 is, for example, a glass substrate. The substrate 100 can also be a flexible substrate made of resin. The substrate 100, together with the drive circuit layer 11A, constitutes a thin film transistor (TFT) substrate. In the case of the top emission structure as shown in FIG. 2, the substrate 100 does not need to be transparent, and a non-transparent substrate, for example, a silicon substrate can be used.

  The driving circuit layer 11A included in the light emitting pixels 11P and 11Q includes a jumper line 16, a gate wiring 17, a switching transistor 21, a driving transistor 22, and a storage capacitor 23 (not shown) formed on the substrate 100, respectively. And an interlayer insulating film 202, a protective film 203, and a planarizing film 204.

  The jumper line 16 is formed inside and on the surface of the protective film 203 so that the gate terminal surface of the light emitting pixel 11P and the gate terminal surface of the light emitting pixel 11Q are directly connected. The jumper line 16 is formed using, for example, a laser CVD (Chemical Vapor Deposition) method. The jumper line 16 is, for example, a metal film mainly composed of tungsten (W), and has a film thickness of 150 nm and a line width of 4 μm. Note that a method of forming the jumper line 16 will be described in a method for correcting the image display device described later.

  In the light emitting pixel 11Q that operates normally when the drive circuit is formed, the gate wiring 17 is provided inside and on the surface of the interlayer insulating film 202 so that the source electrode 212 of the switching transistor 21 and the gate electrode 224 of the drive transistor 22 are connected. Formed on top. On the other hand, in the light emitting pixel 11P that operates abnormally when the drive circuit is formed, the gate wiring 17 is disconnected halfway. Although the gate wiring 17 is not particularly limited, it is preferable to use a material having a low electrical resistivity. For example, silver (Ag), aluminum (Al), nickel (Ni), chromium (Cr), molybdenum (Mo), copper ( Any metal of Cu), iron (Fe), platinum (Pt), and tungsten (W), an alloy of these metals, or a laminate of these metals can be used.

  Note that the gate wiring 17 of the light emitting pixel 11P may not be disconnected. For example, this is the case when the switching transistor 21 is in an open circuit state or when the connection between the drain electrode 211 of the switching transistor 21 and the signal line 12 is in an open state. That is, it is sufficient that the signal voltage from the signal line 12 is not applied to the gate terminal of the driving transistor 22.

  The switching transistor 21 is, for example, a TFT formed on the substrate 100. The switching transistor 21 includes a drain electrode 211, a source electrode 212, a semiconductor layer 213 formed in contact with the drain electrode 211 and the source electrode 212, a gate insulating film 201 formed on the semiconductor layer 213, and a gate insulating film 201. The gate electrode 214 is formed on the substrate.

  The drive transistor 22 is a TFT formed on the substrate 100. The driving transistor 22 includes a drain electrode 221, a source electrode 222, a semiconductor layer 223 formed in contact with the drain electrode 221 and the source electrode 222, a gate insulating film 201 formed over the semiconductor layer 223, and a gate insulating film 201. It is comprised from the gate electrode 224 formed on the top.

  The material of the drain electrodes 211 and 221, the source electrodes 212 and 222, and the gate electrodes 214 and 224 described above is, for example, an alloy of molybdenum (Mo) and tungsten (W). The material of the semiconductor layer 223 is, for example, amorphous silicon, and the film thickness is, for example, 50 nm.

  On the substrate 100, an interlayer insulating film 202, a protective film 203, and a planarizing film 204 are formed.

  The interlayer insulating film 202 is formed so as to cover the switching transistor 21, the drive transistor 22, and the storage capacitor 23, so that the circuit element and the circuit wiring such as the gate wiring 17 are spaced apart. It becomes possible.

  The protective film 203 has a function of preventing the circuit elements and circuit wirings formed in the drive circuit layer 11A from being deteriorated due to external environmental changes. It is formed so as to cover the wiring. Further, the protective film 203 allows the circuit elements such as the circuit element and the gate wiring 17 and the jumper line 16 to be spaced apart from each other.

  The surface of the planarizing film 204 is planarized, thereby enabling the formation of the light emitting layer 11B composed of a multilayer film stacked on the drive circuit layer 11A.

  The material of the interlayer insulating film 202, the protective film 203, and the planarizing film 204 is, for example, a silicon oxide film (SiOx) or a silicon nitride film (SiN), and is formed by, for example, a CVD method or a sputtering method. Further, the planarized film 204 is formed by planarizing the formed film by, for example, a CMP (Chemical Mechanical Polishing) method or the like.

  Note that the interlayer insulating film 202 and the protective film 203 are not necessarily planarized. The flatness of the interlayer insulating film 202 and the protective film 203 may be flat enough that circuit wiring can be continuously formed on the respective surfaces.

  The light emitting layer 11B includes an anode 103, a hole injection layer 104, a hole transport layer 105, an organic light emitting layer 106, a bank layer 107, an electron injection layer 108, and a transparent cathode 109.

  The light emitting pixels 11P and 11Q described in FIG. 2B have a top emission structure. That is, when a voltage is applied to the light emitting layer 11B, light is generated in the organic light emitting layer 106, and light is emitted upward through the transparent cathode 109 and the transparent sealing film 110. Further, the light emitted from the organic light emitting layer 106 directed downward is reflected by the anode 103, and the light is emitted upward through the transparent cathode 109 and the transparent sealing film 110.

The anode 103 is an electrode that is stacked on the surface of the planarizing film 204 of the drive circuit layer 11A and applies a positive voltage to the light emitting layer 11B with respect to the transparent cathode 109. The source electrode 222 of the anode 103 and the driving transistor 22 are connected by vias A _P and A _Q formed in the driving circuit layer 11A. As an anode material constituting the anode 103, for example, Al, Ag, or an alloy thereof, which is a highly reflective metal, is preferable. Further, the thickness of the anode 103 is, for example, 100 to 300 nm.

  The hole injection layer 104 is formed on the surface of the anode 103 and has a function of injecting holes into the organic light emitting layer 106 in a stable manner or by assisting generation of holes. Thereby, the drive voltage of the light emitting layer 11B is lowered, and the lifetime of the element is extended by stabilizing the hole injection. As a material of the hole injection layer 104, for example, PEDOT (polyethylenedioxythiophene) can be used. In addition to the hole injection property, the hole injection layer 104 is required to have optical transparency. As the thickness of the hole injection layer 104 increases, the reflectivity of the hole injection layer 104 decreases. Therefore, the thickness of the hole injection layer 104 is preferably about 10 nm to 100 nm, for example.

  The hole transport layer 105 is formed on the surface of the hole injection layer 104, efficiently transports holes injected from the hole injection layer 104 into the organic light emitting layer 106, and the organic light emitting layer 106 and hole injection. It has a function of preventing deactivation of excitons at the interface with the layer 104 and blocking electrons. The hole transport layer 105 is, for example, an organic polymer material having a property of transferring generated holes by intermolecular charge transfer reaction, and examples thereof include triferamine and polyaniline. Moreover, the thickness of the positive hole transport layer 105 is about 5-50 nm, for example.

  Note that the hole transport layer 105 may be omitted depending on the material of the hole injection layer 104 and the organic light emitting layer 106 which are adjacent layers.

  The organic light emitting layer 106 is formed on the surface of the hole transport layer 105, and has a function of emitting light by generating an excited state when holes and electrons are injected and recombined.

  As the organic light emitting layer 106, it is preferable to use a light emitting organic material that can be formed by a wet film forming method such as inkjet or spin coating. Thereby, simple and uniform film formation is possible on a large-screen substrate. Although it does not specifically limit as this material, A polymeric organic material is preferable. Features of the polymer organic material include a simple device structure, excellent film reliability, and a low-voltage driven device.

  Since a polymer having a conjugated system such as an aromatic ring or a condensed ring or a π-conjugated polymer has fluorescence, it can be used as a polymer organic material constituting the organic light emitting layer 106. Examples of the polymer light emitting material constituting the organic light emitting layer 106 include polyphenylene vinylene (PPV) or a derivative thereof (PPV derivative), polyfluorene (PFO) or a derivative thereof (PFO derivative), and a polyspirofluorene derivative. Can do. It is also possible to use polythiophene or a derivative thereof.

  The bank layer 107 is formed on the surface of the hole injection layer 104 and has a function as a bank for forming the hole transport layer 105 and the organic light emitting layer 106 formed by a wet film formation method in a predetermined region. . The material used for the bank layer 107 may be either an inorganic substance or an organic substance, but the organic substance is generally more preferable because it has a higher water repellency. Examples of such materials include resins such as polyimide and polyacryl. A method for patterning the bank layer 107 is not particularly limited, but it is preferable to apply a photolithography method using a photosensitive material. The bank layer 107 has a thickness of, for example, about 100 to 3000 nm.

  The electron injection layer 108 is formed on the organic light emitting layer 106, reduces the barrier for electron injection into the organic light emitting layer 106, lowers the driving voltage of the light emitting layer 11B, and suppresses exciton deactivation. Have As a result, it is possible to stabilize the electron injection and prolong the life of the device, enhance the adhesion with the transparent cathode 109, improve the uniformity of the light emitting surface, and reduce device defects. The electron injection layer 108 is not particularly limited, but is preferably made of barium, aluminum, phthalocyanine, lithium fluoride, and a barium-aluminum laminate. The thickness of the electron injection layer 108 is, for example, about 2 to 50 nm.

  The transparent cathode 109 is laminated on the surface of the electron injection layer 108, and has a function of applying a negative voltage to the light emitting layer 11B with respect to the anode 103 and injecting electrons into the device (particularly the organic light emitting layer 106). The transparent cathode 109 is not particularly limited, but it is preferable to use a substance and structure having a high transmittance. Thereby, a top emission organic EL element with high luminous efficiency can be realized. The configuration of the transparent cathode 109 is not particularly limited, but a metal oxide layer is used. The metal oxide layer is not particularly limited, and a layer made of indium tin oxide (hereinafter referred to as ITO) or indium zinc oxide (hereinafter referred to as IZO) is used. Further, the thickness of the transparent cathode 109 is, for example, about 5 to 200 nm.

  The transparent sealing film 110 is formed on the surface of the transparent cathode 109 and has a function of protecting the element from moisture. Further, the transparent sealing film 110 is required to be transparent. The transparent sealing film 110 is made of, for example, SiN, SiON, or an organic film. Moreover, the thickness of the transparent sealing film 110 is, for example, about 20 to 5000 nm.

  According to the structure of the light emitting pixels 11P and 11Q described above, a drive in which a signal voltage is not supplied to the gate electrode 224 of the drive transistor 22 due to a failure in a circuit element or wiring other than the drive transistor 22 when the drive circuit is formed. The light emitting pixel 11P having the circuit is directly connected to the gate electrode 224 of the driving transistor of the light emitting pixel 11Q having the driving circuit operating normally by the jumper line 16. Thereby, the signal voltage supplied to the gate of the driving transistor 22 of the light emitting pixel 11Q is supplied to the gate of the driving transistor 22 of the light emitting pixel 11P, so that the light emitting pixel 11P emits the same light as the light emitting pixel 11Q. Is possible.

  Therefore, the dark spot of the light emitting pixel is avoided. Further, in the light emitting pixel 11P, even when an abnormal signal is supplied to the gate of the drive transistor 22 due to an abnormal operation of the circuit element when the drive circuit is formed, the light emitting pixel 11P The same light emission as the light emitting pixel 11Q connected to the jumper line 16 can be performed.

  Therefore, not only the luminescent pixels but also the bright spots can be avoided, and high display quality can be ensured in all display images.

  In addition, like the light emitting pixels 11P and 11Q described in FIG. 2, it is preferable that the gate terminals of the driving transistors of the two adjacent light emitting pixels are directly connected by a jumper line. Thereby, since the light emitting pixel 11P becomes a light emitting state equivalent to the adjacent light emitting pixel 11Q, it is possible to reduce that the light emission of the light emitting pixel 11P alone is conspicuous. Furthermore, since the jumper line can be formed in the shortest time, the correction process by forming the jumper line can be shortened.

  Moreover, it is preferable that the gate terminals of the driving transistors included in the light emitting pixels of the same color are directly connected by a jumper line. Thereby, compared with the case where it connects with the light emission pixel which displays another color, it can reduce that the light emission of the light emission pixel 11P stands out independently.

Next, a correction method for the image display device 1 described in the present embodiment will be described.
FIG. 3 is a cross-sectional view for explaining a correction method of the image display device according to the embodiment of the present invention.

  FIG. 4 is an operation flowchart showing a method for correcting the image display apparatus according to the embodiment of the present invention.

  First, as shown in FIG. 3A, in the manufacturing process of the image display device of the present invention, at the stage where the protective film 203 is formed in the drive circuit layer 11A, the circuit operation is performed for all the light emitting pixels 11. Inspect (S10). Specifically, for example, a test voltage is sequentially output to each light emitting pixel 11 using an array tester (Agilent: HS100), the scanning line 13, and the signal line 12, and the voltage is written in the storage capacitor 23. Thereafter, the array tester sequentially reads the voltage written in the storage capacitor 23 via the signal line 12. Thereby, the light emitting pixel 11 whose read voltage is not a predetermined voltage is specified. Thereby, the pixel specifying process of the light emitting pixel having a defect in at least one of the switching transistor 21, the storage capacitor 23, or the wiring connecting them is completed.

  Note that this circuit operation inspection process may not be performed at the stage where the protective film 203 is formed. For example, the gate wiring 17 is formed before the protective film 203 is formed. It may be executed immediately after.

  Next, as shown in FIG. 3B, the gate wiring 17 connected to the drive transistor 22 of the light emitting pixel 11P determined to be abnormal in the circuit operation specified in step S10 is cut (S20). In FIG. 3B, the cut portion is illustrated as B. As a result, the gate of the driving transistor 22 of the light emitting pixel 11P is opened, and a signal voltage is not applied from other circuit elements and wirings. As a means for cutting the gate wiring 17, for example, laser irradiation can be applied. As a laser condition to be used, for example, a laser oscillator using a YAG (Yttrium Aluminum Garnet) laser as a light source is used, and for example, the wavelength is 532 nm, the pulse width is 10 ns, and the power is 0.5 mW. In the case of this condition, if the width of the gate wiring 17 is, for example, 4 μm and the film thickness is 150 nm, the gate wiring 17 is cut. At this time, examples of the material of the gate wiring 17 include the above-described laminated structure of an alloy of Mo and W / aluminum (Al) / alloy of Mo and W.

Next, as shown in FIG. 3 (c), to form an opening H _P A surface of the gate terminal of the driving transistor 22 of the light emitting pixel 11P it is determined that the circuit operation abnormality in the protective film 203 (S30) . Further, to form an opening H _Q a surface of the gate terminal of the driving transistor 22 of the light emitting pixels 11Q it is determined that the circuit operates normally in the protective film 203 (S40). The means for forming the openings H _P and H _Q, for example, it is possible to apply the laser irradiation. As the laser, for example, a laser having a wavelength of 355 nm is used by using a laser oscillator that generates a third harmonic of a YAG (Yttrium Aluminum Garnet) laser.

  Note that it is preferable to select a light emitting pixel having the same color as that of the light emitting pixel 11P as the light emitting pixel 11Q determined to have normal circuit operation. Thereby, compared with the case where the light emission pixel 11P is connected to the light emission pixel which displays another color, it can reduce that the light emission of the light emission pixel 11P stands out independently.

  Moreover, it is preferable that the light emitting pixel 11Q determined to have normal circuit operation selects a light emitting pixel adjacent to the light emitting pixel 11P. Thereby, the light emitting pixel 11P can be set in a light emitting state equivalent to that of the adjacent light emitting pixel 11Q, and thus it is possible to reduce the light emission of the light emitting pixel 11P from being conspicuous alone. Furthermore, the jumper line forming process described in step S40 described later can be shortened.

Next, as shown in FIG. 3D, the gate terminal of the driving transistor 22 of the light emitting pixel 11P determined to be abnormal in circuit operation, and the gate terminal of the driving transistor 22 of light emitting pixel 11Q determined to be normal in circuit operation. the jumper line 16 is directly connected, thereby forming through openings H _P and H _Q (S50). As a means for forming the jumper wire 16, for example, a laser CVD (OMRON LASER FRONT company: SL455 / SL465 series) method can be used.

  In the laser CVD method, a substrate placed in a source gas is irradiated with a laser beam to promote a chemical / physical reaction of the source gas on the laser-irradiated substrate surface, and a film is grown on the substrate surface. It is a membrane method. Since film formation is performed at the irradiation position of the laser beam, it is suitable for forming the jumper line 16 in this embodiment.

  For example, the surface on which the jumper line 16 is formed is a source gas atmosphere containing tungsten (W) as an element, and a laser having a wavelength of 1.047 μm from a laser oscillator using a neodymium (Nd) -doped YLF (Yttrium Lithium Flouride) crystal. To the surface. Thereby, the chemical / physical reaction between the substrate surface and the source gas is promoted, and a W film is formed on the substrate surface.

  Finally, as shown in FIG. 3E, a planarizing film 204 is formed on the protective film 203 so as to cover the jumper wire 16. Examples of the material of the planarizing film 204 include a silicon oxide film (SiOx) and a silicon nitride film (SiN), and are formed by, for example, a CVD method or a sputtering method. Thereafter, the surface of the formed film is planarized by, for example, a CMP method.

  Through the above steps, the light emitting pixel that operates abnormally during the formation of the drive circuit is corrected, and the formation of the drive circuit layer 11A is completed. Thereafter, the light emitting layer 11B and the transparent sealing film 110 are sequentially formed on the drive circuit layer 11A.

  According to this correction method, a signal voltage is not supplied to the gate terminal of the drive transistor or an abnormal signal is supplied due to a failure in a circuit element or wiring other than the drive transistor when the drive circuit is formed. The pixel is directly connected to the gate terminal of the driving transistor of the normal light emitting pixel by a jumper line. Accordingly, since the signal voltage supplied to the gate of the drive transistor of the normal light emitting pixel is supplied to the gate of the drive transistor of the abnormal light emission pixel, the abnormal light emission pixel emits the same light as the normal light emission pixel. Can be done.

  Therefore, it is possible to avoid dark spots and bright spots of the luminescent pixels, and to ensure high display quality in all display images.

  In this embodiment, the cutting of the gate wiring 17 in step S20, the formation of the opening in steps S30 and S40, and the formation of the jumper line 16 in step S50 are all performed by the same laser processing apparatus. It is possible to simplify the correction process of the image display device.

  Further, there may be a case where the step of cutting the gate wiring 17 in step S20 is not necessary. For example, when the driving circuit is formed, the switching transistor 21 of the light emitting pixel 11P is in an open circuit state, or the connection between the drain electrode 211 of the switching transistor 21 and the signal line 12 is in an open state. It corresponds to. In this case, the gate terminal of the drive transistor 22 is already in an electrically open state without cutting the gate wiring 17.

  Note that the cutting of the gate wiring 17 in step S20 and the opening formation and jumper line formation in steps S30 to S50 need not be performed in this order.

  As described above, the image display device and the correction method thereof according to the present invention have been described based on the embodiments. However, the image display device and the correction method according to the present invention are not limited to the above embodiments. Modifications obtained by various modifications conceived by those skilled in the art within the scope of the present invention without departing from the gist of the present invention and various devices incorporating the image display device according to the present invention are also included in the present invention.

  For example, the image display apparatus according to the present invention is built in a thin flat TV as shown in FIG. As a result, a bright flat or dark spot state of abnormal light emitting pixels is avoided, and a thin flat TV that ensures high display quality in any display image is realized.

  INDUSTRIAL APPLICABILITY The image display apparatus and the correction method thereof according to the present invention are useful as displays for thin televisions, personal computers, and the like and a correction method thereof that require a large screen and high resolution.

DESCRIPTION OF SYMBOLS 1 Image display apparatus 10 Display panel 11, 11P, 11Q Light emission pixel 11A Drive circuit layer 11B Light emission layer 12 Signal line 13 Scan line 14 Scan line drive circuit 15 Signal line drive circuit 16 Jumper line 17 Gate wiring 20 Control circuit 21 Switching transistor 22 Drive transistor 23 Retention capacitor 24 Organic EL element 100 Substrate 103 Anode 104 Hole injection layer 105 Hole transport layer 106 Organic light emitting layer 107 Bank layer 108 Electron injection layer 109 Transparent cathode 110 Transparent sealing film 201 Gate insulating film 202 Interlayer insulating film 203 Protective film 204 Planarizing film 211, 221 Drain electrode 212, 222 Source electrode 213, 223 Semiconductor layer 214, 224 Gate electrode

Claims (11)

An image display device having a display panel in which a plurality of light emitting pixels are arranged in a matrix,
Each of the plurality of light emitting pixels is
A driving transistor that generates a drain current according to the signal voltage by applying a signal voltage to the gate; and
A light emitting element that emits light when the drain current flows;
The display panel is
One or more jumper lines that directly connect the gate terminal of the driving transistor of one light emitting pixel and the gate terminal of the driving transistor of another light emitting pixel;
A signal voltage corresponding to the one light emitting pixel is not applied to a gate terminal of the driving transistor of the one light emitting pixel via a signal line arranged for the one light emitting pixel,
An image display device in which a signal voltage corresponding to the other light emitting pixel is applied to a gate terminal of the driving transistor of the other light emitting pixel via a signal line arranged for the other light emitting pixel. Of the two light emitting pixels having the driving transistor directly connected by the jumper line, in the one light emitting pixel, the gate terminal of the driving transistor of the light emitting pixel is connected to other circuit elements in the light emitting pixel and The image display device according to claim 1, wherein a connection with a signal line arranged for the one light emitting pixel is cut off. The image display device according to claim 1, wherein the two light emitting pixels having the driving transistor directly connected by the jumper line are light emitting pixels of the same color. The image display device according to claim 1, wherein the two light emitting pixels having the driving transistor directly connected by the jumper line are adjacent light emitting pixels. The image display device according to claim 1, wherein the jumper line is a metal wiring formed by a laser beam CVD method. A plurality of driving circuit layers each including a driving transistor that converts a drain voltage corresponding to the signal voltage when a signal voltage is applied to the gate; and a light emitting layer that includes a light emitting element that emits light when the drain current flows. A method of correcting an image display device in which the light emitting pixels are arranged in a matrix,
When forming the drive circuit layer,
An inspection step for inspecting all light emitting pixels to determine whether or not the signal voltage corresponding to the light emitting pixels is normally applied to the gate terminals of the drive transistors of the light emitting pixels;
First opening step of forming a first opening on the surface of the gate terminal of the driving transistor of the first light emitting pixel, which is determined in the inspection step that the signal voltage corresponding to the light emitting pixel is not normally applied. When,
A second opening step for forming a second opening on the surface of the gate terminal of the driving transistor of the second light emitting pixel, in which it is determined in the inspection step that the signal voltage corresponding to the light emitting pixel is normally applied. When,
A jumper line that directly connects the gate terminal of the driving transistor of the first light emitting pixel and the gate terminal of the driving transistor of the second light emitting pixel is formed through the first opening and the second opening. A method for correcting an image display device, including a wiring direct connection step. In the first opening step and the second opening step, the stacked layer is formed by irradiating the stacked layer on the surface of the gate terminal of the driving transistor of the first light emitting pixel and the second light emitting pixel, respectively. Removing the object to form the first opening and the second opening on the surface of the gate terminal;
The method for correcting an image display device according to claim 6, wherein in the wiring direct connection step, a jumper line is formed by a laser beam CVD method. The cutting step of cutting a gate wiring connecting the gate terminal of the driving transistor of the first light emitting pixel and another circuit element of the first light emitting pixel after the inspection step. A method for correcting an image display device according to claim 1. The method for correcting an image display device according to claim 8, wherein in the cutting step, the gate wiring is cut by irradiating a laser to the gate wiring of the driving transistor of the first light emitting pixel. The method for correcting an image display device according to claim 6, wherein the first light emitting pixel and the second light emitting pixel have the same color. The method for correcting an image display device according to claim 6, wherein the first light emitting pixel and the second light emitting pixel are adjacent to each other.

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