KR101675106B1 - 화학 기상 증착 장치 및 방법 - Google Patents

화학 기상 증착 장치 및 방법 Download PDF

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Publication number
KR101675106B1
KR101675106B1 KR1020100049202A KR20100049202A KR101675106B1 KR 101675106 B1 KR101675106 B1 KR 101675106B1 KR 1020100049202 A KR1020100049202 A KR 1020100049202A KR 20100049202 A KR20100049202 A KR 20100049202A KR 101675106 B1 KR101675106 B1 KR 101675106B1
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KR
South Korea
Prior art keywords
reaction gas
chamber
reaction
plasma
microwave
Prior art date
Application number
KR1020100049202A
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English (en)
Korean (ko)
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KR20110129685A (ko
Inventor
유종현
이성재
이재인
박근우
나윤주
강수호
Original Assignee
주식회사 탑 엔지니어링
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Priority to KR1020100049202A priority Critical patent/KR101675106B1/ko
Priority to CN2010105509522A priority patent/CN102260861A/zh
Priority to TW099142196A priority patent/TWI428963B/zh
Publication of KR20110129685A publication Critical patent/KR20110129685A/ko
Application granted granted Critical
Publication of KR101675106B1 publication Critical patent/KR101675106B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02697—Forming conducting materials on a substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
KR1020100049202A 2010-05-26 2010-05-26 화학 기상 증착 장치 및 방법 KR101675106B1 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020100049202A KR101675106B1 (ko) 2010-05-26 2010-05-26 화학 기상 증착 장치 및 방법
CN2010105509522A CN102260861A (zh) 2010-05-26 2010-11-19 化学气相沉积的装置和方法
TW099142196A TWI428963B (zh) 2010-05-26 2010-12-03 化學氣相沉積裝置及方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020100049202A KR101675106B1 (ko) 2010-05-26 2010-05-26 화학 기상 증착 장치 및 방법

Publications (2)

Publication Number Publication Date
KR20110129685A KR20110129685A (ko) 2011-12-02
KR101675106B1 true KR101675106B1 (ko) 2016-11-11

Family

ID=45007688

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020100049202A KR101675106B1 (ko) 2010-05-26 2010-05-26 화학 기상 증착 장치 및 방법

Country Status (3)

Country Link
KR (1) KR101675106B1 (zh)
CN (1) CN102260861A (zh)
TW (1) TWI428963B (zh)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102534622B (zh) * 2012-03-20 2014-01-08 常州比太科技有限公司 在晶硅太阳能电池片表面制绒的方法
TWI470105B (zh) * 2013-06-03 2015-01-21 Adpv Technology Ltd Gas Reaction Continuous Cavity and Gas Reaction
CN105200395B (zh) * 2014-06-18 2017-11-03 中微半导体设备(上海)有限公司 用于mocvd设备的进气及冷却装置
US9928993B2 (en) 2015-01-07 2018-03-27 Applied Materials, Inc. Workpiece processing chamber having a rotary microwave plasma antenna with slotted spiral waveguide
KR101533032B1 (ko) * 2015-02-03 2015-07-01 성균관대학교산학협력단 박막 증착 장치
CN111188027B (zh) * 2020-02-12 2021-08-03 南京大学 一种化学气相沉积设备和成膜方法
KR102409312B1 (ko) * 2020-09-28 2022-06-16 (주)아이작리서치 플라즈마 원자층 증착 장치

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100685823B1 (ko) 2005-01-31 2007-02-22 삼성에스디아이 주식회사 증착 방법
KR100685809B1 (ko) * 2005-01-20 2007-02-22 삼성에스디아이 주식회사 화학 기상 증착 장치
KR100780234B1 (ko) * 2006-12-05 2007-11-27 동부일렉트로닉스 주식회사 화학적 기상 증착공정의 프로세스 챔버
WO2009054232A1 (ja) * 2007-10-22 2009-04-30 Nanomaterial Laboratory Co., Ltd. 半導体製造装置、半導体製造方法及び電子機器

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0673320B2 (ja) * 1987-10-20 1994-09-14 住友金属工業株式会社 マイクロ波プラズマ発生装置
CN1827230A (zh) * 2006-04-13 2006-09-06 沈阳慧宇真空技术有限公司 制备聚光太阳电池叠层结构金属有机源喷雾器
JP5341510B2 (ja) * 2006-05-31 2013-11-13 東京エレクトロン株式会社 窒化珪素膜の形成方法、半導体装置の製造方法およびプラズマｃｖｄ装置
CN100567566C (zh) * 2007-10-31 2009-12-09 苏州大学 一种用于大面积薄膜生长的真空等离子体反应器
CN101702422B (zh) * 2009-10-29 2012-07-04 上海蓝光科技有限公司 一种在图形衬底上生长氮化物薄膜外延层的方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100685809B1 (ko) * 2005-01-20 2007-02-22 삼성에스디아이 주식회사 화학 기상 증착 장치
KR100685823B1 (ko) 2005-01-31 2007-02-22 삼성에스디아이 주식회사 증착 방법
KR100780234B1 (ko) * 2006-12-05 2007-11-27 동부일렉트로닉스 주식회사 화학적 기상 증착공정의 프로세스 챔버
WO2009054232A1 (ja) * 2007-10-22 2009-04-30 Nanomaterial Laboratory Co., Ltd. 半導体製造装置、半導体製造方法及び電子機器

Also Published As

Publication number Publication date
KR20110129685A (ko) 2011-12-02
CN102260861A (zh) 2011-11-30
TWI428963B (zh) 2014-03-01
TW201142922A (en) 2011-12-01

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