201142922 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種化學氣相沉積裝置及方法，特別關 於一種化學氣相沉積裝置，其係具有一電漿產生器，電聚 產生器位於化學氣相深積裝置之一反應腔室之上，用以使 製程反應氣體解離為自由基並經由一喷氣頭供應製程反 應氣體至一反應腔室内部，本發明亦揭露一種使用上述化 學氣相沉積裝置之化學氣相沉積方法。 【先前技術】 在一半導體製程中，一薄膜沉積製程用以將一所需材 料沉積在一晶圓上，並可分為一物理氣體沉積（PVD)方 法與一化學氣相沉積（CVD)方法。其中，化學氣相沉積 方法係提供製程氣體至反應腔室，而在使用高熱或電漿的 情況下’使化學反應之氣體沉積於晶圓上。另外，在有機 金屬化學氣相沉積（metal-organic chemical vapor deposition，M0CVD)方法中，有機金屬化合物係作為前驅 物（precursor )’並被傳送至反應腔室作為載運氣體（ carrier gas) ’之後一有機金屬化合物薄膜便能成長於一加熱之晶 圓表面。 圖1為一種習知化學氣相沉積裝置的示意圖。 請參照圖1所示，習知化學氣相沉積裝置包含一反應 腔室100、一喷氣頭200以及一晶圓支撐體300。反應腔 室1〇〇係密封，且其内部用以進行一沉積製程。喷氣頭200 201142922 係供應反應氣體至反應腔室100之反應空間。晶圓支樓體 300係容讓一晶圓設置於其上。 喷氣頭200設置有複數反應氣體傳輸孔220，其可將 從一反應氣體入口 120排出之反應氣體傳送到反應腔室 1〇〇之反應空間。而在一些情況中，喷氣頭200可數滿多 孔性材料以取代反應氣體傳輸孔220。晶圓W係設复於晶 圓支撐體300上’當然’晶圓W可為單個或複數個。一支 撐桿320係設置於晶圓支撐體300下部的中心並支樓晶圓 春 支撐體300。一氣體排出構件140設置於反應腔室之 底部或侧部以將反應腔室100内的反應氣體排出外面。 另外’ 一化學氣相沉積系統，特別是一有機金屬化學 氣相沉積系統，係用製程發光二極體。在有機金屬化學氣 相沉積系統中’當作為第一反應氣體之有機金屬前驅物， 例如三曱基鎵（trimethylgallium，TMG )或三乙基鎵 (triethylgallium, TEG )與作為第二反應氣體之氨氣（NH3 ) 鲁被傳送至反應腔室時’該等反應氣體係解離或交互反應， 而解離或交互反應之產物係沉積在反應腔室内之晶圓表 面上以形成一薄膜層。 然而’在上述反應中，氨氣需要較高的製程溫度（達 到1000°C)才能解離，而三甲基鎵或三乙基鎵在相對低的 溫度下就容易解離出鎵，而儘管在高製程溫度下，氨氣亦 不易解離。因此，對於三甲基鎵或三乙基鎵，在製程中就 需要供應大量的氨氣。 據此，在習知技術中，高製程溫度造成製程成本的增 201142922 加，並且大量供應的氨氣亦大幅增加材料成本。 此外，由於反應腔室内的高製程溫度，晶圓及其他次 要材料係被局熱所損壞。 【發明内容】 有鑒於上述課題，本發明之一目的在於提供一種化學 氣相沉積裝置，其係具有一電漿產生器，電漿產生器位於 化學氣相深積裝置之一反應腔室之上，用以使製程反應氣 體解離為自由基並經由一喷氣頭供應自由基至一反應腔 室内部。 為達上述目的，本發明之一種化學氣相沉積方法係應 用於一化學氣相沉積裝置以進行反應氣體之電漿製程，化 學氣相沉積裝置之反應腔室上方設有一電漿產生器。化學 氣相沉積方法係經由喷氣頭供應電浆處理過之反應氣體 至反應腔室，以使電漿處理過之反應氣體沉積在位於反應 腔室内之晶圓上。 本發明之化學氣相沉積裝置係能降低製程溫度並減 少反應氣體的供應量。 在一實施例中，化學氣相沉積裝置包含一反應腔室、 一電漿腔室以及一喷氣頭。反應腔室係容置一晶圓，並藉 由第一反應氣體與第二反應氣體之反應而使化學氣相沉 積形成於晶圓上。第二反應氣體係於電漿腔室内藉由一電 漿產生器改變為電漿態。喷氣頭係設置於反應腔室之上， 且排出第一反應氣體與第二反應氣體，第二反應氣體係從 201142922 電漿腔室導入至反應腔室而未與第一反應氣體接觸。 在一實施例中，喷氣頭包含一第一反應氣體腔室、複 數第一反應氣體通道以及複數第二反應氣體通道。第一反 應氣體係導入至第一反應氣體腔室。第一反應氣體通道係 連通第一反應氣體腔室與反應腔室，第一反應氣體係經由 該等第一反應氣體通道流通。第二反應氣體通道係連通電 漿腔室與反應腔室，第二反應氣體係經由該等第二反應氣 體通道流通。 在一實施例中，第一反應氣體腔室係位於電漿腔室與 反應腔室之間，並且該等第二反應氣體通道貫穿第一反應 氣體腔室。較佳者，喷氣頭更包含一冷卻腔室，第一反應 氣體通道與第二反應氣體通道係貫穿冷卻腔室。 在一實施例中，第一反應氣體係至少選自三甲基鎵、 三乙基鎵或其他有機金屬化合物。第二反應氣體係至少選 自氮氣、氨氣或其他氫氧化物。 在一實施例中，電漿產生器包含一微波產生器、一微 波導引板以及複數波導元件。微波導引板將微波產生器所 產生之微波放射至電漿腔室。波導元件係呈管狀並將微波 產生器所產生之微波傳送至微波導引板。該等波導元件係 在微波導引板内並呈板狀5且相互平行間隔設置。 在一實施例中，微波導引板之材質包含石英或百麗玻 璃（Pyrex，美國康寧公司）。 在一實施例中，電漿產生器包含一射頻（radio frequency, RF )電力供應單元以及一射頻線圈。射頻線圈 201142922 從射頻電力供應單元接收電力而產生一電場與一磁場，以 將電場及磁場誘導進入電聚腔室。 在一實施例中，本發明之一種化學氣相沉積方法包含 將一第一反應氣體導入至一第一反應氣體腔室；將一第二 反應氣體導入至一電漿腔室，並藉由使用一電漿產生器將 導入之第二反應氣體改變為一電漿態；以及經由一喷氣頭 將第一反應氣體與該第二反應氣體導入至一反應腔室之 上部，且使第一反應氣體與第二反應氣體在通入反應腔室 之前互相不接觸。 在一實施例中，第一反應氣體與該第二反應氣體係分 別經由一第一反應氣體通道及一第二反應氣體通道導入 至反應腔室，第一反應氣體通道及第二反應氣體通道係設 置於喷氣頭内且互相不干涉。第二反應氣體通道之一直徑 與一長度之一比值較佳係大於等於1 〇。 在一實施例中，第二反應氣體係經由下列步驟變為電 漿態：藉由一微波產生器產生微波；藉由複數波導元件將 微波產生器所產生之微波傳送至一微波導引板；以及藉由 微波導引板將從該等波導元件所傳送之微波放射至電漿 腔室，其中該等波導元件係在微波導引板内平行間隔設 置。 承上所述，反應氣體包含一氫氧化物，例如氨氣，其 係預先處理為電漿態，並供應至一反應腔室，與習知技術 相比，藉此可大幅降低一製程溫度，並且節省裝置的操作 成本，並可避免一晶圓與其他構件被高熱所損壞。 201142922 此外，反應氣體變為電漿態並供應至反應腔室，與習 知技術相較，藉此能減少反應氣體的使用量，並因而節省 材料成本。 此外，從電漿態之反應氣體所產生之電子與離子型式 自由基，在經過一喷氣頭時係形成中性粒子，藉此可避免 一晶圓與一沉積層被電子損壞。 【實施方式】 以下將參照相關圖式，說明依據本發明較佳實施例之 一種化學氣相沉積裝置及方法，其中相同的元件將以相同 的參照符號加以說明。 圖2為本發明較佳實施例之一種化學氣相沉積裴置的 剖面示意圖，圖3為本發明較佳實施例之一種化學氣相沉 積裝置之一喷氣頭的局部放大示意圖，圖4為本發明較佳 實施例之一種化學氣相沉積裝置之一電漿產生器的示意 圖。 本發明較佳實施例之一種化學氣相沉積裝置包含一 反應腔室10、一喷氣頭20、一電漿腔室30以及一電漿產 生器40。反應腔室10係讓反應氣體交互反應以及沉積製 程進行的地方。喷氣頭20係提供反應氣體至反應腔室10 之反應空間。電漿腔室30係設置於喷氣頭20之上，用以 儲存電漿態之反應氣體。電漿產生器40設置於電漿腔室 30之上，用以使電漿腔室30内的反應氣體變化為電漿態。 反應腔室10包含一晶圓W，其係位於反應空間，藉 201142922 由第一反應氣體與第二反應氣體之反應，可產生一材料， 該材料係化學氣相沉積於晶圓w。晶圓w係設置於—晶 圓支撐體14上。至少一晶圓W設置於晶圓支撐體14上。 當複數晶圓W設置於晶圓支樓體14上時，較佳者係該等 晶圓W沿著晶圓支撐體14之一中心軸對稱設置，或者該 等晶圓W係均勻分佈。一支撐桿16用以支撐晶圓支撐體 114並位於晶圓支撐體14之下。支撙桿16可藉由一晶圓 支撐體驅動馬達（圖未顯示）驅動而轉動。一加熱器（圖 未顯示）用以加熱晶圓支撐體14至一製程溫度，並位於 晶圓支撐體14之下。一氣體排出構件12設置於反應腔室 10之下，並且反應腔室10内之反應氣體係排出至反應腔 室10之外。 另外，在本實施例中，三甲基鎵作為第一反應氣體， 而氨氣作為第二反應氣體60並且在電漿腔室30内轉變為 電漿態。三曱基鎵與氨氣經由喷氣頭20傳送至反應腔室 10内’然後兩者相互反應以沉積於晶圓W上。 在本實施例中，三曱基鎵作為第一反應氣體，然而本 發明不限於此，另外例如三乙基鎵、三甲基銦 (trimethylindium，TMI)、三甲基！呂（trimethylaluminum， TMAL )、二乙基鋅（diethylzinc, DEZn )或其他類似材料 皆可作為第一反應氣體，此外像金屬烷基（metal alkyl) 材料、或其他有機金屬化合物亦可作為第一反應氣體。 此外，在本實施例中，雖然氨氣作為第二反應氣體， 但像其他預定的氫氧化物（hydrate )，例如氮氣、鱗化氫 201142922 (PH3 )、砷化氫（AsH3 )、或偏二曱肼（Unsymmetrical Dimethyl Hydrazine，UDMH )皆可作為第二反應氣體。 喷氣頭20設置於電漿腔室30與反應腔室10之間， 其可避免第一反應氣體與第二反應氣體相互接觸’並可將 各別反應氣體傳送至反應腔室10。 請參照圖2及圖3, 一第一反應氣體腔室23係形成於 喷氣頭20之上，並且至少一第一反應氣體入口 25係形成 於第一反應氣體腔室23之一側。此外，一第一反應氣體 通道21係連通第一反應氣體腔室23與反應腔室10,並且 一第二反應氣體通道22係連通電漿腔室30與反應腔室 1〇 ’第一反應氣體通道21與第二反應氣體通道22係間隔 設置，並且各有複數個。亦即，第一反應氣體腔室23與 反應腔室10係經由複數第一反應氣體通道21而相互連 接’並且電漿腔室30與反應腔室10係經由複數第二反應 氣體通道22而相互連接。在此態樣中，第二反應氣體通 道22係貫穿第一反應氣體腔室23，然而第二反應氣體通 道22並無與第一反應氣體腔室23連通，而是直接與反應 腔室10連通。在此態樣中，第一反應氣體通道21與第二 反應氣體通道22係相互不干涉。 此外，一冷卻腔室24係形成於第一反應氣體腔室23 之下’因而第一反應氣體通道21與第二反應氣體通道22 係貫穿冷卻腔室24。第一反應氣體通道21與第二反應氣 體通道22係貫穿冷卻腔室24，但並無與冷卻腔室24連 通。一冷卻材料70係於冷卻腔室24内流動，且第一反應 11 201142922 氣體50與第二反應氣體60係無與冷卻材料70接觸。 第一反應氣體50係經由第一反應氣體入口 25導入第 一反應氣體腔室23，並經由第一反應氣體通道21導入反 應腔室10。第二反應氣體60經由一第二反應氣體入口 32 導入電漿腔室30，然後被變化為電漿態，並經由第二反應 氣體通道22導入反應腔室10。在此態樣中，由於第一反 應氣體通道21與第二反應氣.體通道22係相互不干涉，因 此第一反應氣體50與第二反應氣體60係無相互接觸，直 到皆導入反應腔室10始進行反應。 至少一冷卻材料入口 26形成於冷卻腔室24之一側， 並且至少一冷卻材料出口 27係形成於冷卻腔室24之另一 側。藉此，冷卻材料，例如水、油或其他類似者，係導入 並流動，並冷卻第一反應氣體通道21與第二反應氣體通 道22，然後被排出。 一個以上之第一第二反應氣體入口 32設置於電漿腔 室30之一側，並且第二反應氣體60係經由第二反應氣體 入口 32導入至電漿腔室30。導入至電漿腔室30之第二反 應氣體60在經由喷氣頭20傳送至反應腔室10之前，係 -藉由電漿產生器40而變化為電漿態，並因而以離子型式 存在。 電漿產生器40將電漿腔室30内之第二反應氣體60 改變為電漿態，以從第二反應氣體60產生自由基 (radicals)。請參照圖4，電漿產生器40包含一微波產生 器42、一微波導引板44以及複數波導元件46。微波產生 12 201142922201142922 VI. Description of the Invention: [Technical Field] The present invention relates to a chemical vapor deposition apparatus and method, and more particularly to a chemical vapor deposition apparatus having a plasma generator, the electropolymer generator being located in the chemical a gas vapor deposition device is disposed above one of the reaction chambers for dissociating the process reaction gas into free radicals and supplying the process reaction gas to a reaction chamber via a jet head. The present invention also discloses the use of the above chemical vapor deposition. Chemical vapor deposition method of the device. [Prior Art] In a semiconductor process, a thin film deposition process is used to deposit a desired material on a wafer and can be divided into a physical gas deposition (PVD) method and a chemical vapor deposition (CVD) method. . Among them, the chemical vapor deposition method provides a process gas to the reaction chamber, and the chemical reaction gas is deposited on the wafer in the case of using high heat or plasma. In addition, in the metal-organic chemical vapor deposition (M0CVD) method, an organometallic compound is used as a precursor and is transported to a reaction chamber as a carrier gas. The organometallic compound film can be grown on a heated wafer surface. 1 is a schematic view of a conventional chemical vapor deposition apparatus. Referring to FIG. 1, a conventional chemical vapor deposition apparatus includes a reaction chamber 100, a jet head 200, and a wafer support 300. The reaction chamber 1 is sealed and used internally for a deposition process. The jet head 200 201142922 supplies a reaction gas to the reaction space of the reaction chamber 100. The wafer support body 300 allows a wafer to be placed thereon. The air jet head 200 is provided with a plurality of reaction gas transfer holes 220 for transferring the reaction gas discharged from a reaction gas inlet 120 to the reaction space of the reaction chamber. In some cases, the air jet head 200 may be filled with a porous material to replace the reactive gas transfer hole 220. The wafer W is applied over the wafer support 300. Of course, the wafer W may be single or plural. A struts 320 are disposed at the center of the lower portion of the wafer support 300 and support the wafer spring support 300. A gas discharge member 140 is disposed at the bottom or side of the reaction chamber to discharge the reaction gas in the reaction chamber 100 to the outside. Further, a chemical vapor deposition system, particularly an organometallic chemical vapor deposition system, uses a process LED. In an organometallic chemical vapor deposition system, 'as an organometallic precursor as a first reactive gas, such as trimethylgallium (TMG) or triethylgallium (TEG) and ammonia as a second reactive gas When the gas (NH3) is transported to the reaction chamber, the reaction gas systems dissociate or interact, and the product of the dissociation or interaction is deposited on the surface of the wafer in the reaction chamber to form a thin film layer. However, in the above reaction, ammonia requires a higher process temperature (up to 1000 ° C) to dissociate, while trimethylgallium or triethylgallium readily dissociates gallium at relatively low temperatures, albeit at high At the process temperature, ammonia is also not easily dissociated. Therefore, for trimethylgallium or triethylgallium, a large amount of ammonia gas is required to be supplied in the process. Accordingly, in the prior art, the high process temperature causes the process cost to increase by 201142922, and the large supply of ammonia gas also greatly increases the material cost. In addition, wafers and other secondary materials are damaged by local heat due to the high process temperatures in the reaction chamber. SUMMARY OF THE INVENTION In view of the above problems, it is an object of the present invention to provide a chemical vapor deposition apparatus having a plasma generator which is located above a reaction chamber of a chemical vapor deposition apparatus. And used to dissociate the process reaction gas into free radicals and supply free radicals to a reaction chamber via a jet head. To achieve the above object, a chemical vapor deposition method of the present invention is applied to a chemical vapor deposition apparatus for performing a plasma process of a reaction gas, and a plasma generator is disposed above a reaction chamber of the chemical vapor deposition apparatus. The chemical vapor deposition method supplies a plasma-treated reaction gas to a reaction chamber via a jet head to deposit a plasma-treated reaction gas on a wafer located in the reaction chamber. The chemical vapor deposition apparatus of the present invention can reduce the process temperature and reduce the supply amount of the reaction gas. In one embodiment, the chemical vapor deposition apparatus includes a reaction chamber, a plasma chamber, and a jet head. The reaction chamber houses a wafer, and chemical vapor deposition is formed on the wafer by reaction of the first reactive gas with the second reactive gas. The second reaction gas system is changed to a plasma state in the plasma chamber by a plasma generator. The jet head system is disposed above the reaction chamber and discharges the first reaction gas and the second reaction gas, and the second reaction gas system is introduced into the reaction chamber from the 201142922 plasma chamber without being in contact with the first reaction gas. In one embodiment, the gas jet head includes a first reactive gas chamber, a plurality of first reactive gas passages, and a plurality of second reactive gas passages. The first reaction gas system is introduced into the first reaction gas chamber. The first reactive gas passage is in communication with the first reactive gas chamber and the reaction chamber, and the first reactive gas system is circulated through the first reactive gas passages. The second reactive gas passage is in communication with the plasma chamber and the reaction chamber, and the second reactive gas system is circulated through the second reactive gas passage. In one embodiment, the first reactive gas chamber is between the plasma chamber and the reaction chamber, and the second reactive gas passage extends through the first reactive gas chamber. Preferably, the jet head further comprises a cooling chamber through which the first reactive gas passage and the second reactive gas passage pass. In one embodiment, the first reactant gas system is selected from at least trimethylgallium, triethylgallium or other organometallic compounds. The second reaction gas system is selected from at least nitrogen, ammonia or other hydroxides. In one embodiment, the plasma generator includes a microwave generator, a microwave guide plate, and a plurality of waveguide elements. The microwave guiding plate radiates the microwave generated by the microwave generator to the plasma chamber. The waveguide element is tubular and transmits the microwave generated by the microwave generator to the microwave guide plate. The waveguide elements are arranged in the microwave guide plate in a plate shape 5 and spaced apart from each other. In one embodiment, the material of the microwave guide plate comprises quartz or Belleglass (Pyrex, Corning, USA). In one embodiment, the plasma generator includes a radio frequency (RF) power supply unit and a radio frequency coil. RF coil 201142922 receives power from an RF power supply unit to generate an electric field and a magnetic field to induce an electric field and a magnetic field into the electrical polymerization chamber. In one embodiment, a chemical vapor deposition method of the present invention comprises introducing a first reaction gas into a first reaction gas chamber; introducing a second reaction gas into a plasma chamber, and using a plasma generator changes the introduced second reaction gas to a plasma state; and introduces the first reaction gas and the second reaction gas to a portion above the reaction chamber via a jet head, and the first reaction gas is made The second reaction gas is not in contact with each other before being introduced into the reaction chamber. In one embodiment, the first reaction gas and the second reaction gas system are respectively introduced into the reaction chamber through a first reaction gas channel and a second reaction gas channel, and the first reaction gas channel and the second reaction gas channel system are Set in the jet head and do not interfere with each other. The ratio of one of the diameters of the second reaction gas passage to the length is preferably greater than or equal to 1 〇. In one embodiment, the second reaction gas system is changed to a plasma state by: generating a microwave by a microwave generator; transmitting microwaves generated by the microwave generator to a microwave guiding plate by a plurality of waveguide elements; And transmitting, by the microwave guiding plate, the microwaves transmitted from the waveguide elements to the plasma chamber, wherein the waveguide elements are arranged in parallel within the microwave guiding plate. As described above, the reaction gas contains a hydroxide, such as ammonia gas, which is pretreated to a plasma state and supplied to a reaction chamber, thereby greatly reducing the temperature of a process compared with the prior art. Moreover, the operating cost of the device is saved, and a wafer and other components are prevented from being damaged by high heat. 201142922 In addition, the reaction gas becomes a plasma state and is supplied to the reaction chamber, thereby reducing the amount of reaction gas used and thereby saving material costs as compared with the prior art. In addition, electrons and ion-type radicals generated from the reactive gas of the plasma state form neutral particles when passing through a jet head, thereby preventing a wafer and a deposited layer from being damaged by electrons. [Embodiment] Hereinafter, a chemical vapor deposition apparatus and method according to a preferred embodiment of the present invention will be described with reference to the accompanying drawings, wherein the same elements will be described with the same reference numerals. 2 is a schematic cross-sectional view showing a chemical vapor deposition apparatus according to a preferred embodiment of the present invention, and FIG. 3 is a partially enlarged schematic view showing a gas jet head of a chemical vapor deposition apparatus according to a preferred embodiment of the present invention; A schematic diagram of a plasma generator of one of the chemical vapor deposition devices of the preferred embodiment of the invention. A chemical vapor deposition apparatus according to a preferred embodiment of the present invention comprises a reaction chamber 10, a jet head 20, a plasma chamber 30, and a plasma generator 40. The reaction chamber 10 is where the reaction gases interact and where the deposition process takes place. The gas jet head 20 supplies a reaction gas to the reaction space of the reaction chamber 10. A plasma chamber 30 is disposed above the air jet head 20 for storing the reactive gas in the plasma state. The plasma generator 40 is disposed above the plasma chamber 30 for changing the reaction gas in the plasma chamber 30 to a plasma state. The reaction chamber 10 includes a wafer W which is located in the reaction space and is reacted by the first reaction gas with the second reaction gas by 201142922 to produce a material which is chemical vapor deposited on the wafer w. The wafer w is disposed on the wafer support body 14. At least one wafer W is disposed on the wafer support 14. When the plurality of wafers W are disposed on the wafer support body 14, it is preferred that the wafers W are symmetrically disposed along a central axis of the wafer support 14, or the wafers W are uniformly distributed. A support rod 16 is used to support the wafer support 114 and is located below the wafer support 14. The support rod 16 is rotatable by a wafer support drive motor (not shown). A heater (not shown) is used to heat the wafer support 14 to a process temperature and is located below the wafer support 14. A gas discharge member 12 is disposed below the reaction chamber 10, and the reaction gas system in the reaction chamber 10 is discharged outside the reaction chamber 10. Further, in the present embodiment, trimethylgallium is used as the first reactive gas, and ammonia gas is used as the second reactive gas 60 and is converted into a plasma state in the plasma chamber 30. The trimethyl gallium and ammonia are transported into the reaction chamber 10 via the gas jet head 20 and then both react with each other to deposit on the wafer W. In the present embodiment, trimethyl gallium is used as the first reaction gas, but the present invention is not limited thereto, and another example is triethyl gallium, trimethylindium (TMI), trimethyl! Trimethylaluminum (TMAL), diethylzinc (DEZn) or other similar materials can be used as the first reaction gas. In addition, metal alkyl materials or other organometallic compounds can also be used as the first reaction. gas. Further, in the present embodiment, although ammonia gas is used as the second reaction gas, it is like other predetermined hydrates such as nitrogen, sulfuric acid 201142922 (PH3), arsine (AsH3), or second. Unsymmetrical Dimethyl Hydrazine (UDMH) can be used as the second reaction gas. The gas jet head 20 is disposed between the plasma chamber 30 and the reaction chamber 10, which prevents the first reaction gas from contacting the second reaction gas, and can transfer the respective reaction gases to the reaction chamber 10. Referring to Figures 2 and 3, a first reaction gas chamber 23 is formed on the gas jet head 20, and at least a first reaction gas inlet 25 is formed on one side of the first reaction gas chamber 23. In addition, a first reaction gas channel 21 is connected to the first reaction gas chamber 23 and the reaction chamber 10, and a second reaction gas channel 22 is connected to the plasma chamber 30 and the reaction chamber 1'' The passage 21 and the second reaction gas passage 22 are spaced apart from each other, and each has a plurality of them. That is, the first reaction gas chamber 23 and the reaction chamber 10 are connected to each other via the plurality of first reaction gas passages 21 and the plasma chamber 30 and the reaction chamber 10 are connected to each other via the plurality of second reaction gas passages 22 connection. In this aspect, the second reaction gas passage 22 penetrates the first reaction gas chamber 23, but the second reaction gas passage 22 is not in communication with the first reaction gas chamber 23, but is directly connected to the reaction chamber 10. . In this aspect, the first reaction gas passage 21 and the second reaction gas passage 22 do not interfere with each other. Further, a cooling chamber 24 is formed below the first reaction gas chamber 23, and thus the first reaction gas passage 21 and the second reaction gas passage 22 are passed through the cooling chamber 24. The first reaction gas passage 21 and the second reaction gas passage 22 pass through the cooling chamber 24 but are not in communication with the cooling chamber 24. A cooling material 70 flows in the cooling chamber 24, and the first reaction 11 201142922 gas 50 and the second reaction gas 60 are not in contact with the cooling material 70. The first reaction gas 50 is introduced into the first reaction gas chamber 23 via the first reaction gas inlet 25, and introduced into the reaction chamber 10 via the first reaction gas passage 21. The second reaction gas 60 is introduced into the plasma chamber 30 via a second reaction gas inlet 32, then changed to a plasma state, and introduced into the reaction chamber 10 via the second reaction gas passage 22. In this aspect, since the first reaction gas passage 21 and the second reaction gas passage 22 do not interfere with each other, the first reaction gas 50 and the second reaction gas 60 are not in contact with each other until they are introduced into the reaction chamber. The reaction started at 10 o'clock. At least one cooling material inlet 26 is formed on one side of the cooling chamber 24, and at least one cooling material outlet 27 is formed on the other side of the cooling chamber 24. Thereby, a cooling material such as water, oil or the like is introduced and flows, and the first reaction gas passage 21 and the second reaction gas passage 22 are cooled and then discharged. More than one first and second reaction gas inlets 32 are disposed on one side of the plasma chamber 30, and the second reaction gas 60 is introduced into the plasma chamber 30 via the second reaction gas inlet 32. The second reaction gas 60 introduced into the plasma chamber 30 is changed to a plasma state by the plasma generator 40 before being transferred to the reaction chamber 10 via the gas jet head 20, and thus exists in an ion form. The plasma generator 40 changes the second reactive gas 60 in the plasma chamber 30 to a plasma state to generate radicals from the second reactive gas 60. Referring to Figure 4, the plasma generator 40 includes a microwave generator 42, a microwave guide plate 44, and a plurality of waveguide elements 46. Microwave generation 12 201142922
Is 42係產生微波，轉、士、餘 ^ 6 放/皮導引板44係將微波產生器42所 產生之被波放射至雷將Β介a 峰哭4?折吝斗 7月工至3〇，波導元件46係將微波產 : ^之微波傳送至微波導引板44。當電聚產生 益40產生之微波到遠雷 電水腔室30時，電漿腔室30内之 第一反應氣體6〇将鐵去a '、為電漿態，並因而產生離子型式自 由基與自由电子。 微波產生器42係A脸始 '、马將第二反應氣體60變化為電毁熊The Is 42 system generates microwaves, and the transfer, the Shi, and the rest are released. The radiation generated by the microwave generator 42 is radiated to the thunder, and the peak is crying. That is, the waveguide element 46 transmits the microwave generated by the microwave to the microwave guiding plate 44. When the electricity is generated to generate the microwave generated by the benefit 40 to the remote lightning water chamber 30, the first reaction gas 6 in the plasma chamber 30 turns the iron to a ', is in a plasma state, and thus generates an ion type radical and Free electronics. The microwave generator 42 is a face starter, and the horse changes the second reaction gas 60 into an electric bear.
之能量來源’並產生料、冰 ^ 、二 皮，且將微波發送至各波導元件46。 各波導元件4 6传A技j, 0你為皆狀，並與微波產生器42連接， 以將從微波產生器42把α·= β 所振盪出來的微波傳送至微波導引 板44。 微波V引板44較佳者係為一石英板或一派熱克斯板 (PyreX咖6)。微波導弓丨板44係導引從電襞產生器40振 盪之锨波，並使其均勻地放射至電漿腔室3〇。為此，在本 貫施例中，微波導引板44係形成為方形，並且波導元件 46係在微波導引板44内間隔、平行設置。 在其他實施例中’波導元件46可為螺旋狀，且在此 態樣中’微波導引板44之形狀可調整為適合波導元件46。 另外，除了微波之外，像中頻（medium frequency, MF)、高頻（high frequency, HF )、射頻（radio frequency, RF )、特高頻（very high frequency, VHF )、超高頻（ultrahigh frequency，UHF )皆可用來產生電漿。圖5為本發明另一 實施例之利用射頻產生電漿之一種化學氣相沉積裝置的 示意圖，圖6為使用射頻之一種電漿產生器的示意圖。 13 201142922 請參照圖5及圖6，電漿產生器包含一射頻電力供應 單元，其係包含一射頻產生器86、一射頻匹配器（RF matcher ) 88以及一身彳-頻線圈82，射頻線圈82與射頻電力 供應單元連接。射頻線圈82設置於一陶瓷板84上並且與 電漿腔室30電性隔絕。 射頻線圈82係鄰設於電漿腔室30之上方，從射頻電 力供應單元接收射頻電力而產生一電場與一儲存磁場，且 電場與儲存磁場被誘導進入電聚腔室3 0而激發在電聚腔 室30内之第二反應氣體60，而使其變為電漿態。 在本實施例中，射頻線圈82係形成為螺旋狀並設置 於陶瓷板84上，陶瓷板84係使射頻線圈82與電漿腔室 30電性隔離。因此，本實施例之陶瓷板84係用以作為一 絕緣元件，但在其他實施例中，石英板或其他可使射頻線 圈82及電漿腔室30電性隔離之元件亦可作為絕緣元件。 本發明最大之技術特徵係為反應氣體預先處理為電 漿態，再經由喷氣頭20將反應氣體傳送至反應腔室10之 頂部，以與另一反應氣體產生反應，如此就能輕易地在低 製程溫度的情況下形成沉積。然而，在習知技術中，當反 應氣體變為電漿態時，反應氣體係離子化而產生帶正電電 荷之自由基以及帶負電電荷之自由電子。當電子直接導入 反應腔室10時，電子會撞擊晶圓及一沉積層，因而使得 晶圓及沉積層被電子之電荷所損壞。然而，在本實施例 中，當反應氣體變為電漿態所產生之電子通過喷氣頭20 之第二反應氣體通道22時，會撞擊並吸收帶正電電荷之 14 201142922 N+自由基，因而使得導入反應腔室10之電子的量有顯著 的減少。 換言之，傳送至反應腔室10之氨氣在電漿腔室30内 變為電漿態，並解離為離子型式之自由基與電子。從氨氣 所產生的電子通過喷氣頭時，其係撞擊並吸收離子型式之 N+自由基，並產生中性自由基（N)。結果，導入反應腔室 10之電子的數量便大幅減少。 以下進一步說明化學氣相沉積裝置。電子係通過通道 而撞擊帶正電荷之自由基，該通道之氣壓小於1毫陶爾 (mTorr )，且通道之一直徑與一長度之比值係約為5。該 比值與氣壓呈反比。一般來說，有機金屬化學氣相沉積製 程係在10陶爾（=104 mTorr )之氣壓下進行。因此，在一 般之有機金屬化學氣相沉積製程中，電子所通過之通道而 撞擊帶正電電荷之自由基，通道之直徑與長度之比值為 5x10-4。在本實施例中，第二反應氣體通道22之一直徑D 與一長度L分別為600 μιη與6 mm。因此，第二反應氣體 通道22之直徑與長度之比值為10。據此，在本實施例中， 當電子通過第二反應氣體通道22時，將會與帶正電電荷 之自由基產生2x104 ( 10/(5x10-4))次的碰撞。 依據在上述之環境下所得到的實驗結果，當第二反應 氣體60在電漿腔室30内呈電漿態時，氮（N)自由基濃 度為1010/cm3，而氮自由基在反應腔室10内之濃度為 1012〜14/cm3。亦即，第二反應氣體60在電漿腔室30内 形成電漿態，以致產生濃度1 〇 1 〇/cm3之氮自由基。然而， 15 201142922 當氮自由基通過喷氣頭20之第二反應氣體通道22時，自 由電子碰撞並吸收N+自由基以產生中性粒子，藉此使得 電漿腔室30内之氮自由基之濃度與反應腔室10内之氮自 由基的濃度產生差異。換言之，此差異所應的電子數量即 在通過喷氣頭20時吸收N+自由基，如此，導入反應腔室 10内之電子的濃度便因而減少，進而避免晶圓W與沉積 層被電子所損壞。 依據本發明較佳實施例，一種化學氣相沉積裝置，特 別是一種有機金屬化學氣相沉積（MOCVD)裝置係預先 處理反應氣體，使其在高溫下解離而形成電漿態，並將其 均勻地傳送至一反應腔室，進而提高化學氣相沉積程程之 效能。這也使得本發明具有非常高的產業應用性。 以上所述僅為舉例性，而非為限制性者。任何未脫離 本發明之精神與範疇，而對其進行之等效修改或變更，均 應包含於後附之申請專利範圍中。 【圖式簡單說明】 圖1為一種習知化學氣相沉積裝置的示意圖； 圖2為本發明較佳實施例之一種化學氣相沉積裝置的 剖面示意圖； 圖3為本發明較佳實施例之一種化學氣相沉積裝置之 一喷氣頭的局部放大示意圖； 圖4為本發明較佳實施例之一種化學氣相沉積裝置之 16 201142922 一電漿產生器的示意圖； 圖5為本發明另一實施例之一種化學氣相沉積裝置的 剖面示意圖；以及 圖6為本發明另一實施例之一種化學氣相沉積裝置之 一種電漿產生器的示意圖。 【主要元件符號說明】 10 :反應腔室 14 :晶圓支撐體 20 :喷氣頭 22 :第二反應氣體通道 24 :冷卻腔室 26 :冷卻材料入口 30 :電漿腔室 40 :電漿產生器 44 :微波導引板 50 :第一反應氣體 70 :冷卻材料 84 :陶瓷板 88 :射頻匹配器 120 :反應氣體入口 200 :喷氣頭 300 :晶圓支撐體 D :直徑 12 :氣體排出構件 16 :支撐桿 21 :第一反應氣體通道 23 :第一反應氣體腔室 25 :第一反應氣體入口 27 :冷卻材料出口 32 :第二反應氣體入口 42 :微波產生器 46 :波導元件 60 :第二反應氣體 82 :射頻線圈 86 :射頻產生器 100 :反應腔室 140 :氣體排出構件 220 :反應氣體傳輸孔 320 :支撐桿 L ·長度 17 201142922The source of energy' produces material, ice, and skin, and transmits microwaves to each waveguide element 46. Each of the waveguide elements 46 transmits an A, and is connected to the microwave generator 42 to transmit the microwave oscillated from the microwave generator 42 to the microwave guide 44. The microwave V lead plate 44 is preferably a quartz plate or a Pyrex plate (PyreX coffee 6). The micro-waveguide bow plate 44 guides the chopping of the ripple from the power generator 40 and uniformly radiates it to the plasma chamber 3''. To this end, in the present embodiment, the microwave guiding plates 44 are formed in a square shape, and the waveguide elements 46 are disposed in the microwave guiding plate 44 at intervals, in parallel. In other embodiments the 'waveguide element 46 can be helical, and in this aspect the shape of the microwave guide plate 44 can be adjusted to fit the waveguide element 46. In addition, in addition to microwaves, such as medium frequency (MF), high frequency (HF), radio frequency (RF), very high frequency (VHF), ultra high frequency (ultrahigh) Frequency, UHF) can be used to generate plasma. Fig. 5 is a schematic view showing a chemical vapor deposition apparatus for generating plasma by radio frequency according to another embodiment of the present invention, and Fig. 6 is a schematic view showing a plasma generator using radio frequency. 13 201142922 Referring to FIG. 5 and FIG. 6, the plasma generator includes an RF power supply unit including a RF generator 86, an RF matcher 88, and a body-frequency coil 82, a radio frequency coil 82. Connected to the RF power supply unit. The RF coil 82 is disposed on a ceramic plate 84 and electrically isolated from the plasma chamber 30. The RF coil 82 is disposed adjacent to the plasma chamber 30, receives RF power from the RF power supply unit to generate an electric field and a stored magnetic field, and the electric field and the stored magnetic field are induced into the electropolymer chamber 30 to excite the electricity. The second reactive gas 60 in the chamber 30 is brought into a plasma state. In the present embodiment, the RF coil 82 is formed in a spiral shape and disposed on the ceramic plate 84. The ceramic plate 84 electrically isolates the RF coil 82 from the plasma chamber 30. Therefore, the ceramic plate 84 of the present embodiment is used as an insulating member, but in other embodiments, a quartz plate or other member that electrically isolates the RF coil 82 from the plasma chamber 30 can also function as an insulating member. The most technical feature of the present invention is that the reaction gas is pretreated into a plasma state, and then the reaction gas is sent to the top of the reaction chamber 10 via the gas jet head 20 to react with another reaction gas, so that it can be easily low. Deposition is formed in the case of process temperature. However, in the prior art, when the reaction gas becomes a plasma state, the reaction gas system is ionized to generate a radical having a positive charge and a free electron having a negative charge. When electrons are directly introduced into the reaction chamber 10, electrons strike the wafer and a deposited layer, thereby causing the wafer and the deposited layer to be damaged by the charge of the electrons. However, in the present embodiment, when the electrons generated by the reaction gas becoming the plasma state pass through the second reaction gas passage 22 of the gas jet head 20, they collide and absorb the positively charged 14 201142922 N+ radical, thereby making There is a significant reduction in the amount of electrons introduced into the reaction chamber 10. In other words, the ammonia gas delivered to the reaction chamber 10 becomes a plasma state in the plasma chamber 30 and dissociates into ion-type radicals and electrons. When the electrons generated from the ammonia gas pass through the jet head, they collide and absorb the ion-type N+ radical and generate a neutral radical (N). As a result, the amount of electrons introduced into the reaction chamber 10 is greatly reduced. The chemical vapor deposition apparatus is further explained below. The electrons strike a positively charged radical through the channel, the gas pressure of the channel being less than 1 millitor (mTorr), and the ratio of one of the diameters to the length of the channel is about 5. This ratio is inversely proportional to the barometric pressure. Generally, the organometallic chemical vapor deposition process is carried out at a pressure of 10 Torr (= 104 mTorr). Therefore, in a general organometallic chemical vapor deposition process, electrons pass through a channel that strikes a positively charged radical, and the ratio of the diameter to the length of the channel is 5x10-4. In the present embodiment, one of the diameters D and one length L of the second reaction gas passage 22 is 600 μm and 6 mm, respectively. Therefore, the ratio of the diameter to the length of the second reactive gas passage 22 is 10. Accordingly, in the present embodiment, when electrons pass through the second reactive gas passage 22, they collide with the positively charged radicals by 2x104 (10/(5x10-4)) times. According to the experimental results obtained under the above environment, when the second reaction gas 60 is in a plasma state in the plasma chamber 30, the nitrogen (N) radical concentration is 1010/cm3, and the nitrogen radical is in the reaction chamber. The concentration in the chamber 10 is 1012 to 14/cm3. That is, the second reactive gas 60 forms a plasma state in the plasma chamber 30, so that a nitrogen radical having a concentration of 1 〇 1 〇/cm 3 is generated. However, 15 201142922 When nitrogen radicals pass through the second reactive gas channel 22 of the gas jet head 20, free electrons collide and absorb N+ radicals to produce neutral particles, thereby causing the concentration of nitrogen radicals in the plasma chamber 30. There is a difference from the concentration of nitrogen radicals in the reaction chamber 10. In other words, the difference in the number of electrons required to absorb the N+ radicals while passing through the gas jet head 20, so that the concentration of electrons introduced into the reaction chamber 10 is thus reduced, thereby preventing the wafer W and the deposited layer from being damaged by electrons. According to a preferred embodiment of the present invention, a chemical vapor deposition apparatus, particularly an organic metal chemical vapor deposition (MOCVD) apparatus, pretreats a reaction gas to dissociate at a high temperature to form a plasma state, and uniformizes it. The ground is transferred to a reaction chamber to improve the efficiency of the chemical vapor deposition process. This also makes the invention highly industrially applicable. The above is intended to be illustrative only and not limiting. Any equivalent modifications or alterations to the spirit and scope of the present invention are intended to be included in the scope of the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic view of a conventional chemical vapor deposition apparatus; FIG. 2 is a schematic cross-sectional view showing a chemical vapor deposition apparatus according to a preferred embodiment of the present invention; BRIEF DESCRIPTION OF THE DRAWINGS FIG. 4 is a schematic view showing a chemical vapor deposition apparatus according to a preferred embodiment of the present invention; FIG. 4 is a schematic diagram of a plasma vaporizer according to a preferred embodiment of the present invention; A schematic cross-sectional view of a chemical vapor deposition apparatus; and FIG. 6 is a schematic view of a plasma generator of a chemical vapor deposition apparatus according to another embodiment of the present invention. [Main component symbol description] 10: Reaction chamber 14: Wafer support 20: Air jet head 22: Second reaction gas passage 24: Cooling chamber 26: Cooling material inlet 30: Plasma chamber 40: Plasma generator 44: microwave guiding plate 50: first reaction gas 70: cooling material 84: ceramic plate 88: RF matching device 120: reaction gas inlet 200: air jet head 300: wafer support D: diameter 12: gas discharge member 16: Support rod 21: first reaction gas passage 23: first reaction gas chamber 25: first reaction gas inlet 27: cooling material outlet 32: second reaction gas inlet 42: microwave generator 46: waveguide element 60: second reaction Gas 82: RF coil 86: RF generator 100: Reaction chamber 140: Gas discharge member 220: Reaction gas transmission hole 320: Support rod L Length 17 201142922