CN103806093B - Epitaxial growth device and method for ICP (inductively coupled plasma) based compound semiconductor - Google Patents
Epitaxial growth device and method for ICP (inductively coupled plasma) based compound semiconductor Download PDFInfo
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- CN103806093B CN103806093B CN201410053424.4A CN201410053424A CN103806093B CN 103806093 B CN103806093 B CN 103806093B CN 201410053424 A CN201410053424 A CN 201410053424A CN 103806093 B CN103806093 B CN 103806093B
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Abstract
The invention discloses an epitaxial growth device and method for an ICP (inductively coupled plasma) based compound semiconductor. The device comprises a vacuum reaction chamber, a sample table, an ICP excitation unit, a first gas path and a second gas path, wherein the sample table is arranged at the bottom of the vacuum reaction chamber and rotates around the center point; the ICP excitation unit is located at the top of the vacuum reaction chamber; the first gas path is provided with a first gas inlet, and used for feeding a first gaseous reaction source into the vacuum reaction chamber; the second gas path is provided with a second gas inlet, and used for feeding a second gaseous reaction source into the vacuum reaction chamber; the ICP excitation unit is used for exciting the first gaseous reaction source and the second gaseous reaction source to carry out ionized decomposition, and the sample table can be heated so as to carry out thermal cracking on the first gaseous reaction source and the second gaseous reaction source, so that epitaxial growth is implemented. The epitaxial growth device and method disclosed by the invention have the advantage of low growth temperature.
Description
Technical field
The invention belongs to film growth apparatus technical field is and in particular to a kind of inductively coupled plasma
The low-temperature epitaxy growth device and method of the compound semiconductor of (inductively coupled plasma, icp).
Background technology
New compound semi-conducting material with gan, sic as representative attention in the world in recent ten years, in purple
Outward/blue light/green light LED, laser instrument, detector, and the aspect such as high-frequency high temperature high-power electronic device have important
And be widely applied.
In order to obtain good device performance it is desirable to compound semiconductor film is in monocrystalline state as far as possible.Currentization
The epitaxial growth method of compound quasiconductor mainly has molecular beam epitaxy (mbe) and metal-organic chemical vapor extension (movpe).
Because mbe has the shortcomings that vacuum condition requirement is harsh, growth rate is slow, commonly used movpe carries out compound and partly leads at present
Body is epitaxially grown to be commercially produced.
It is desirable to reactant is diffused into substrate surface in the way of laminar flow in the movpe growth course of compound semiconductor,
Crack in substrate surface, the reaction such as chemical combination and migration, thus forming compound semiconductor single crystal thin film.Existing movpe,
The required energy of reactant cracking, chemical combination, migration is mainly obtained by way of silicon, because reacting gas presence is stronger
Chemical bond, and reactant particle needs certain energy in substrate surface migration, thus it requires substrate has in epitaxial process
High temperature., reactant is generally ga (ch taking movpe epitaxial growth gan as a example3)3And nh3, ga (ch3)3Cracking temperature
About 500 DEG C, nh3Cracking temperature be about 700 DEG C, consider further that the migration in substrate surface for the gan, general epitaxial growth temperature is close
1000℃.If adopting ga (ch3)3And n2Carry out extension, due to n2Chemical bond is higher, needs higher growth temperature.
Although high temperature epitaxy enables opto-electronic device of good performance, such as led, there is also a lot of problems.First, serve as a contrast
Bottom material and size-constrained.Due to high temperature resistant and Lattice Matching requirement, compound semiconductor epitaxial growth can be used at present
Substrate can only be a few single crystalline substrate, be such as used for growing the al of gan base semiconductor2o3, si, for growing gaas base half
The gaas of conductor, for growing sic, si of sic quasiconductor etc., these single crystalline substrate are relatively costly, size-constrained, are difficult to directly
Carry out the large area epitaxial growth of compound semiconductor.And can be used for the substrate of large area film substrate, such as glass, plastics etc.,
All it is difficult to steady operation under hot conditionss again.Secondly as the thermal coefficient of expansion of substrate and epitaxial film often exist certain
Difference, epitaxial temperature is higher, and the stress of semiconductive thin film is bigger, directly affects the performance of device.Again, it is generally desirable to depositing
Corresponding chemical reaction is only carried out in substrate surface, reduces the pre-reaction beyond substrate surface as far as possible, and under the high temperature conditions, very
Difficult control pre-reaction beyond substrate surface for the reacting gas.
The problem brought for movpe high growth temperature, there has been proposed plasma enhancing movpe(pe-movpe) think
Method, it is desirable to pass through low temperature plasma cracking reaction thing in advance, improves the potential energy of reactant atom, reduces compound and partly lead
The epitaxially grown purpose of body.The common method producing low temperature plasma has: capacitance coupling plasma (ccp), inductive
Plasma (icp), Ecr plasma (ecr).Ccp reative cell is simple, but plasma density and energy are no
Method independent regulation.The plasma density of ecr is high, and energy conversion rate is high, and existing pe-movpe is mainly produced by the way of ecr
Raw plasma.But the intrinsic mode hopping behavior of ecr is so as to be difficult to use in large-area thin film deposition.Icp can produce
The analogous plasma density with ecr, has preferable plasma uniformity simultaneously, can transport in very big air pressure range
OK, obtain a wide range of applications in the thin film deposition of non epitaxial growth.
After reactant gas produce plasma, cation, metastable atom molecule and neutral atom all can use next life
Become compound semiconductor, but the neutral particle of cation therein and high energy can cause to substrate to bombard, thus affecting chemical combination
The crystallization property of thing quasiconductor., reacting gas adopts ga (ch taking pemovpe growth gan as a example3)3And n2, in nitrogen plasma
Comprise Nitrogen ion, nitrogen-atoms, nitrogen molecular, the generation of gan can be participated in principle, but Nitrogen ion and high energy neutral particle
(as nitrogen-atoms, nitrogen molecular) can cause bombardment, ga to go the problems such as absorption, gan decomposition and point defect to substrate.Therefore, in order to carry
The crystalline quality of the epitaxially grown compound semiconductor of high/low temperature it is necessary to manage reduce reach positive ion density at substrate and
The neutral-particle density of high energy, enables the as far as possible many arrival substrates of mental retardation active particle participate in reaction simultaneously.
Content of the invention
It is contemplated that at least solving the high technical problem of above-mentioned epitaxial temperature to a certain extent.
For this reason, it is an object of the present invention to propose a kind of epitaxial temperature ground, film quality good based on plasma
Compound semiconductor low-temperature epitaxy growth device.
Further object is that the good change based on plasma of a kind of epitaxial temperature of proposition ground, film quality
The low-temperature epitaxy growth method of compound quasiconductor.
For achieving the above object, the epitaxial growth device of the compound semiconductor based on icp of the embodiment of the present invention, permissible
Including: vacuum reaction chamber；Sample stage, described sample stage is located at the bottom of described vacuum reaction chamber；Icp excites unit, described icp
Unit is excited to be located at the top of described vacuum reaction chamber；There is the first gas circuit of the first air inlet, for described vacuum response
Chamber is passed through the first vapor reaction source；There is the second gas circuit of the second air inlet, for being passed through the second gas to described vacuum reaction chamber
State reaction source；Wherein, described icp excites unit to be used for exciting described first vapor reaction source and the ionization point of the second vapor reaction source
Solution, described sample stage can heat with by described first vapor reaction source and the second vapor reaction source thermal cracking, to carry out extension life
Long.
According to the embodiments of the present invention, growth temperature is had based on the epitaxial growth device of the compound semiconductor of icp
Advantage low, that film quality is good.
For achieving the above object, the epitaxial growth method of the compound semiconductor based on icp of the embodiment of the present invention, permissible
Comprise the following steps: on the sample stage of bottom substrate being placed in vacuum reaction chamber；Each lead into described vacuum reaction chamber
One vapor reaction source and the second vapor reaction source；Make described first gas by the way of electric induction coupling excites plasma icp
State reaction source and the ionization of the second vapor reaction source are decomposed, and heat described substrate to preset temperature so that described first gaseous state is anti-
Ying Yuan and the second vapor reaction source thermal cracking, to carry out epitaxial growth；Described substrate is taken out from described vacuum reaction chamber.
According to the embodiments of the present invention, growth temperature is had based on the epitaxial growth method of the compound semiconductor of icp
Advantage low, that film quality is good.
The additional aspect of the present invention and advantage will be set forth in part in the description, and partly will become from the following description
Obtain substantially, or recognized by the practice of the present invention.
Brief description
The above-mentioned and/or additional aspect of the present invention and advantage will become from reference to the description to embodiment for the accompanying drawings below
Substantially and easy to understand, wherein:
Fig. 1 is the structural representation of the epitaxial growth device of the compound semiconductor based on icp of one embodiment of the invention
Figure.
Fig. 2 is the structural representation of the epitaxial growth device of the compound semiconductor based on icp of another embodiment of the present invention
Figure.
Fig. 3 is the schematic diagram of the metallic plate as distance separation device of the embodiment of the present invention.
Fig. 4 is the structural representation of the epitaxial growth device of the compound semiconductor based on icp of another embodiment of the present invention
Figure.
Fig. 5 be the embodiment of the present invention ALT pulse be passed through vapor reaction source and icp excite unit pulsed operation when
Sequence figure.
Fig. 6 is the structural representation of the epitaxial growth device of the compound semiconductor based on icp of another embodiment of the present invention
Figure.
Fig. 7 is the structural representation of the epitaxial growth device of the compound semiconductor based on icp of another embodiment of the present invention
Figure.
Fig. 8 is the flow chart of the epitaxial growth method of the compound semiconductor based on icp of the embodiment of the present invention.
Specific embodiment
Embodiments of the invention are described below in detail, the example of described embodiment is shown in the drawings, wherein from start to finish
The element that same or similar label represents same or similar element or has same or like function.Below with reference to attached
The embodiment of figure description is exemplary it is intended to be used for explaining the present invention, and is not considered as limiting the invention.
In describing the invention it is to be understood that term " " center ", " longitudinal ", " horizontal ", " length ", " width ",
" thickness ", " on ", D score, "front", "rear", "left", "right", " vertical ", " level ", " top ", " bottom " " interior ", " outward ", " up time
The orientation of instruction such as pin ", " counterclockwise " or position relationship are based on orientation shown in the drawings or position relationship, are for only for ease of
The description present invention and simplification describe, rather than the device of instruction or hint indication or element must have specific orientation, Yi Te
Fixed azimuth configuration and operation, are therefore not considered as limiting the invention.
Additionally, term " first ", " second " are only used for describing purpose, and it is not intended that indicating or hint relative importance
Or the implicit quantity indicating indicated technical characteristic.Thus, define " first ", the feature of " second " can express or
Implicitly include one or more this feature.In describing the invention, " multiple " are meant that two or more,
Unless otherwise expressly limited specifically.
In the present invention, unless otherwise clearly defined and limited, term " installation ", " being connected ", " connection ", " fixation " etc.
Term should be interpreted broadly, for example, it may be being fixedly connected or being detachably connected, or is integrally connected；It can be machine
Tool connects or electrically connects；Can be to be joined directly together it is also possible to be indirectly connected to by intermediary, can be two units
Connection within part.For the ordinary skill in the art, above-mentioned term can be understood as the case may be at this
Concrete meaning in bright.
First aspect present invention proposes a kind of low-temperature epitaxy growth device of the compound semiconductor based on icp, as Fig. 1 institute
Show, excite unit 30, the first gas circuit 40 and the second gas circuit 50 including vacuum reaction chamber 10, sample stage 20, icp.
Wherein, vacuum reaction chamber 10 can be substantially cylindrical.It is provided with vacuum pump system 10a, bag in vacuum reaction chamber 10
Include mechanical pump and molecular pump so that vacuum reaction chamber 10 keep when not having gas to be passed through fine vacuum or ultra-high vacuum state,
When having gas to be passed through, holding chamber internal gas pressure is constant.
Sample stage 20 is usually provided at the bottom of vacuum reaction chamber 10, for carrying substrate.Alternatively, sample stage 20 can be around
Central point rotates, and is conducive to Material growth to obtain evenly.Preferably, sample stage 20 is configured to lift in vertical direction.
For example, it is possible to the distance adjusting the bottom base apart from vacuum reaction chamber 10 for the sample stage 20 is 1-500 millimeter.At this moment can pass through
Change print platform 20 and the distance of plasma generating area, the active mental retardation neutral atom in regulation reacting gas and molecule,
Powered and high energy particle reaches concentration and the energy of substrate surface.
Icp excites unit 30 can arrange the top of vacuum reaction chamber 10.Icp excites unit 30 mainly to include radio frequency source
30a, impedance matching network 30b, plate coil 30c and quartz window 30d.The radiofrequency signal that radio frequency source 30a produces is (for example
The radiofrequency signal of 13.56mhz) be loaded on plate coil 30c through impedance matching network 30b, be then passed through quartz window 30d with
The form of inductive is coupled in vacuum reaction chamber 10.
First gas circuit 40 is used for being passed through the first vapor reaction source to vacuum reaction chamber 10.First gas circuit 40 is provided with spray head
First air inlet 40a of formula and first mass flow control meter (mfc1) 40b controlling flow.First vapor reaction source can be
The stronger material of chemical bond, such as nitrogen, oxygen, carbon oxides, particularly nh3、n2、c3h8、sih4Or h2One or more of o
Combination.
Second gas circuit 50 is used for being passed through the second vapor reaction source to vacuum reaction chamber 10, and the second gas circuit 50 is provided with spray head
Second air inlet 50a of formula and second mass flow control meter (mfc2) 50b controlling flow.Second vapor reaction source can be
The weaker material of chemical bond, such as metallo-organic compound, particularly ga (ch3)3、in(ch3)3、al(ch3)3、zn(ch3)3Or
si(ch3)4In one or more of combination.
Above-mentioned first vapor reaction source and the second vapor reaction source react the epitaxial layer finally giving can be gan,
Inn, aln, ingan, algan, sic, zno etc. compound semiconductor epitaxial layer.
Above-mentioned icp excites unit 30 to can be used for exciting the first vapor reaction source and the ionization point of the second vapor reaction source
Solution, is wherein mainly used in exciting the first vapor reaction source ionization to decompose, produces the low-energy plasma of high density, sample stage 20
Can be used for heating the first vapor reaction source and the second vapor reaction source makes its thermal cracking, be wherein mainly used in heating with by second
Vapor reaction source thermal cracking, to carry out epitaxial growth.Material stronger for chemical bond is decomposed by icp mode, chemical bond weaker
Material decomposed by mode of heating, so can reduce the heating-up temperature required for epitaxial growth.Wherein, sample stage 20 is permissible
With metal probe, the substrate that can have metallic film directly to metal substrate or surface deposition is energized and individually heats.Sample stage
20 advantages that can individually heat are: the chamber wall of vacuum reaction chamber 10 can keep low temperature state, thus avoiding the first gaseous state
There is pre-reaction in reaction source and the second vapor reaction source, also save energy consumption simultaneously.
The low-temperature epitaxy growth device of the compound semiconductor based on icp according to the above embodiment of the present invention, by icp
The stronger reactant of mode breaking up chemical bonds, by mode of heating breaking up chemical bonds weaker, can effectively reduce extension reaction
Temperature, improves the quality of epitaxial film.
It should be noted that this low-temperature epitaxy growth device may be equipped with plasma observation window 61, permanent magnet 62, bright
The equipment such as Miao's probe 63, film thickness monitor 64.Wherein permanent magnet 62 can increase density and the uniformity of plasma.
In an example of the present invention, also include distance separation device 70, as shown in Figure 2.Distance separation device 70 will
Vacuum reaction chamber 10 is divided into plasma discharge region a and plasma downstream area b.Wherein, distance separation device 70 filter etc. from
Cation in the ionization catabolite in the first vapor reaction source in daughter region of discharge a and high energy neutral particle are it is allowed to mental retardation is lived
Property particle enter the thermal cracking products in plasma downstream area b and the second vapor reaction source substrate surface reactions on sample stage
To carry out epitaxial growth.Because cation occurs compound reaction on distance separation device 70 surface, very dense reduces, high energy
Neutral particle also has larger decline through the collision energy of gas molecule, and the metastable state neutral particle required for epitaxial growth
Density is substantially unaffected.Therefore distance separation device 70 can be by unfavorable to epitaxial growth grain in a of plasma discharge region
Sub- basic filtering, will be substantially retained for the particle favourable to epitaxial growth, then into plasma downstream area b.So, lead to
Crossing installation space isolating device 70 can avoid cation and high energy neutral particle to produce bombardment to substrate, lead to epitaxial layer quality
Not good.
Alternatively, this distance separation device 70 is to be horizontally set in vacuum reaction chamber 10, uniformly multiple filter openings gold
Belong to plate, as shown in Figure 3.Although it should be noted that Fig. 3 is illustrated that the metallic plate of uniformly circular filter opening, being only in order at and show
The convenience of example and the restriction of non-invention, can also be the geometry such as rectangular grid in further embodiments.This metallic plate
Can be stood in vacuum reaction chamber 10 by the support feet that insulant (such as quartz) is made.Preferably, can on this metallic plate
To load several volts to more than ten volts of Dc bias, now this metal plate and belt positive electricity, can be repelled each other principle resistance using same electric charge
Only cation passes through, and realizes intercepting the purpose of cation.
In an example of the present invention, Time Isolation Unit 80 when also including, as shown in Figure 4.When Time Isolation Unit 80 will
Vacuum reaction chamber 10 is divided into plasma discharge region a and plasma downstream area b.When icp excites unit 30 to be working condition,
When Time Isolation Unit 80 plasma discharge region a and plasma downstream area b are isolated, by the ionization in the first vapor reaction source
Catabolite is limited in plasma discharge region a and carries out Natural Attenuation.When icp excite unit 30 be intermittent condition when, when interval
From device 80, plasma discharge region a is connected with plasma downstream area b so that the mental retardation active particle not decaying most enters
Plasma downstream area b is reacted with the thermal cracking products in the second vapor reaction source to carry out epitaxial growth.So, by during setting
Time Isolation Unit 80 can avoid cation and high energy neutral particle to produce bombardment to substrate, leads to epitaxial layer quality not good.
Alternatively, when Time Isolation Unit 80 be horizontally set in vacuum reaction chamber 10, switched by electric field controls or
Magnetic field controlling switch controls the gate of folding.Electric field controls switch or magnetic field controlling switch have that switching speed is fast, resisting fatigue
Property good advantage, and be easily arranged to excite the operating frequency of unit synchronous with icp.
During epitaxial growth, it is passed through the first vapor reaction source and the second vapor reaction in the same space synchronization
Source, is susceptible to pre-reaction.
For reducing the generation of pre-reaction, in one embodiment of the invention, the first air inlet 40a excites list adjacent to icp
Unit 30, and the second air inlet 50a is adjacent to sample stage 20.And, the first gas circuit 40 and the second gas circuit 50 are configured to pulse and hand over
Alternately each lead into the first vapor reaction source and the second vapor reaction source to vacuum reaction chamber 10, and icp excites unit 30 quilt
It is configured to using the pulse working mode with the first gas circuit 40 synchronization.Preferably, as shown in figure 5, being passed through the first vapor reaction source
Between period and the second vapor reaction source period, there are intervals, after that is, a kind of vapor reaction source stops input, cross one
Another kind of vapor reaction source of section time input, thus is avoided that the effect of generation pre-reaction is more preferable.Normally, ALT pulse is passed through gas
State reaction source can be by arranging the first mass flow controller (mfc1) 40b and the second mass flow controller (mfc2) 50b
Realize.
For reducing the generation of pre-reaction, in another embodiment of the present invention, as shown in fig. 6, this epitaxial growth device
Also include vertical partition plate 90, vacuum reaction chamber 10 is divided into the first chamber 101 being isolated from each other and second chamber by vertical partition plate 90
102.Wherein, first chamber 101 is connected with the first gas circuit 40, and second chamber 102 is connected with the second gas circuit 50.Sample stage 20 simultaneously
It is configured to do between first chamber 101 and second chamber 102 and periodically move, so that sample stage 20 alternately contacts first
Vapor reaction source and the second vapor reaction source.In this embodiment, the first vapor reaction source and the second vapor reaction source can continue
Be passed through.It should be noted that periodicity movement can be rotating around central point shown in Fig. 6 or other are reciprocal
The forms such as translation, those skilled in the art can flexible design as needed.
It should be noted that in the epitaxial growth device of the present invention, can be by the combination of technical scheme come simultaneously real
Existing " filtering out suitable reactions particle " and " avoiding pre-reaction " dual purpose.For example, it is possible to set in vacuum reaction chamber 10
Put vertical partition plate 90, vacuum reaction chamber 10 is divided into the first chamber 101 being isolated from each other and second chamber 102 by vertical partition plate 90.
Meanwhile, it is respectively arranged with distance separation device 70 in first chamber 101 and second chamber 102.This embodiment is as shown in Figure 7.
Second aspect present invention proposes a kind of epitaxial growth method of the compound semiconductor based on icp, as shown in figure 8,
May comprise steps of:
A. substrate is placed on the sample stage of bottom of vacuum reaction chamber；
B. the first vapor reaction source and the second vapor reaction source are each led into vacuum reaction chamber；
C. the first vapor reaction source and the second vapor reaction source electricity are made by the way of electric induction coupling excites plasma
From decomposition, and heat substrate to preset temperature so that the first vapor reaction source and the second vapor reaction source thermal cracking, carry out outer
Epitaxial growth；
D. substrate is taken out from vacuum reaction chamber.
Preferably, when the chemical bond in the first vapor reaction source is better than the chemical bond in described second vapor reaction source, the first gas
State reaction source mainly ionizes decomposition by icp mode, and mode of heating thermal cracking is mainly passed through in the second vapor reaction source.
The low-temperature epitaxy growth device of the compound semiconductor based on icp according to the above embodiment of the present invention, by icp
The stronger reactant of mode breaking up chemical bonds, by mode of heating breaking up chemical bonds weaker, can effectively reduce extension reaction
Temperature, improves the quality of epitaxial film.
In an example of the present invention, spatial separation operation is carried out to the ionization dissociating product in the first vapor reaction source,
Filter cation and high energy neutral particle it is allowed to mental retardation active particle reaches substrate surface the heat with the second vapor reaction source
Pyrolysis product reacts to carry out epitaxial growth.Cation and high energy neutral particle so can be avoided to produce bombardment to substrate, lead
Cause epitaxial layer quality not good.
In an example of the present invention, spatial separation operation is carried out to the ionization dissociating product in the first vapor reaction source,
Leave cation and high energy neutral particle decay it is allowed to unbated mental retardation active particle reach substrate surface and with the second gas
The thermal cracking products of state reaction source react to carry out epitaxial growth.Cation and high energy neutral particle so can be avoided to substrate
Produce bombardment, lead to epitaxial layer quality not good.
It is characterised in that sample stage is configured to lift in vertical direction in an example of the present invention.At this moment
Can by changing the distance of print platform and plasma generating area, adjust active mental retardation neutral atom in reacting gas and
Molecule, powered and high energy particle reach concentration and the energy of substrate surface.
In an example of the present invention, pulse alternately each leads into the first vapor reaction source and to vacuum reaction chamber
Two vapor reaction sources, and be also carried out while being passed through the first vapor reaction source electric induction coupling excite.So can effectively keep away
Exempt from the first vapor reaction source and the second vapor reaction source occurs pre-reaction.
In an example of the present invention, this epitaxial growth method also includes: vacuum response chamber is spatially separated
For first chamber and second chamber, it is continually fed into the first vapor reaction source and the second vapor reaction source respectively, and by sample stage
Do periodically mobile, so that sample stage alternately contacts the first vapor reaction source and second between first chamber and second chamber
Vapor reaction source.The first vapor reaction source and the second vapor reaction source so can be prevented effectively from pre-reaction occurs.
In an example of the present invention, the first vapor reaction source can be nh3、n2、c3h8Or h2One or more of o
Combination.
In an example of the present invention, the second vapor reaction source can be ga (ch3)3、in(ch3)3、al(ch3)3、zn
(ch3)3Or sih4In one or more of combination.
For making those skilled in the art more fully understand epitaxial growth device and the method for the present invention, four realities are set forth below
Apply example to be introduced.
Embodiment 1
Illustrate with reference to Fig. 1, substrate is fixed on sample stage 20, then, using vacuum pump system 10a by vacuum response
Gas within chamber 10 is discharged, and makes background vacuum be less than or equal to 10-4mtorr.Rely on sample stage 20 heating substrate and be allowed to
Keep 500 DEG C of temperature.Then, input n to the first air inlet 40a2, input tmga to the second air inlet 50a, pass through true simultaneously
Empty pumping system 10a makes within the chamber pressure remain 3torr.Finally open icp and excite unit 30, produce nitrogen plasma, start
The epitaxial growth of gan.
Embodiment 2
Illustrate with reference to Fig. 1, substrate is fixed on sample stage 20, then, using vacuum pump system 10a by vacuum response
Gas within chamber 10 is discharged, and makes background vacuum be less than or equal to 10-4mtorr.Rely on sample stage 20 heating substrate and be allowed to
Keep 500 DEG C of temperature.Alternately following two steps, start the epitaxial growth of gan: (a) inputs to the first air inlet 40a
Flow is the n of 50sccm2, enter gas port 50a input tmga to second, so that within the chamber pressure is kept by vacuum pump system 10a
For 0.1torr.Continue 1min.B () closes the second air inlet 50a, so that the first air inlet 40a input flow rate is changed into simultaneously
50sccm, makes within the chamber pressure remain 3torr by vacuum pump system 10a.Open icp and excite unit 30, produce nitrogen etc. from
Daughter.Continue 1min.
Embodiment 3
Illustrate with reference to Fig. 2, sample stage 20 fixes substrate.Then, using vacuum pump system 10a by vacuum response
Gas within chamber 10 is discharged, and makes background vacuum be less than or equal to 10-3pa.Rely on sample stage 20 heating substrate to 530 DEG C, protect
Holding 20 minutes makes it fully give vent to anger.Then underlayer temperature is dropped to 500 DEG C, input n from the first air inlet 40a2, gas flow is
100～1000sccm；It is passed through by carrier gas h from the second air inlet 50a2Ga (the ch of dilution3)3, n2With ga (ch3)3Flow-rate ratio be
100:1～10:1, makes within the chamber pressure remain 1～100pa by vacuum pump system 10a.Open icp and excite unit 30, produce
Raw nitrogen plasma, Jia 10～100v positive voltage on distance separation device 70 simultaneously, absorbs Nitrogen ion and high energy nitrogen neutrality grain
Son, allows Low Energy Nitrogen neutral particle and ga (ch3)3On substrate, reaction is thus epitaxial growth gan.
Embodiment 4
Illustrate with reference to Fig. 6, sample stage 20 fixes substrate.Then, using vacuum pump system 10a by vacuum response
Gas within chamber 10 is discharged, and makes background vacuum be less than or equal to 10-3pa.Rely on sample stage 20 heating substrate to 430 DEG C, protect
Holding 20 minutes makes it fully give vent to anger.Then, underlayer temperature is dropped to 400 DEG C, input n from the first air inlet 40a2, gas flow
For 100～1000sccm；It is passed through by carrier gas h from the second air inlet 50a2Al (the ch of dilution3)3, n2With al (ch3)3Flow-rate ratio
For 100:1～10:1, within the chamber pressure is made to remain 1～100pa by vacuum pump system 10a.Open icp and excite unit 30,
Produce the plasma containing nitrogen and aluminum active particle, Jia 10 on distance separation device 90～100v positive voltage simultaneously.Allow sample
Sample platform 20 is rotated with 1～1000 rev/min of speed, is alternately exposed to first chamber 101 and second chamber 102, adsorption activity
Nitrogen and aluminum neutral particle carry out the epitaxial growth of aln.
In the description of this specification, reference term " embodiment ", " some embodiments ", " example ", " specifically show
The description of example " or " some examples " etc. means specific features, structure, material or the spy describing with reference to this embodiment or example
Point is contained at least one embodiment or the example of the present invention.In this manual, to the schematic representation of above-mentioned term not
Necessarily refer to identical embodiment or example.And, the specific features of description, structure, material or feature can be any
One or more embodiments or example in combine in an appropriate manner.
Although embodiments of the invention have been shown and described above it is to be understood that above-described embodiment is example
Property it is impossible to be interpreted as limitation of the present invention, those of ordinary skill in the art is in the principle without departing from the present invention and objective
In the case of above-described embodiment can be changed within the scope of the invention, change, replace and modification.
Claims (15)
1. a kind of epitaxial growth device of the compound semiconductor based on icp is it is characterised in that include:
Vacuum reaction chamber；
Sample stage, described sample stage is located at the bottom of described vacuum reaction chamber；
Icp excites unit, and described icp excites unit to be located at the top of described vacuum reaction chamber；
There is the first gas circuit of the first air inlet, for being passed through the first vapor reaction source to described vacuum reaction chamber；
There is the second gas circuit of the second air inlet, for being passed through the second vapor reaction source to described vacuum reaction chamber；
Wherein, described icp excites unit to be used for exciting described first vapor reaction source and the ionization of the second vapor reaction source to decompose, and produces
The raw low-energy plasma of high density；
Described sample stage lifts in vertical direction, to change the distance of sample stage and plasma generating area, adjusts reaction gas
Active mental retardation neutral atom in body and molecule, powered and high energy particle reach concentration and the energy of substrate surface；
Described vacuum response intracavity includes isolating device, and described vacuum reaction chamber is divided into plasma to put by described isolating device
Electric area and plasma downstream area, described isolating device be distance separation device or when Time Isolation Unit；
Described sample stage can heat with by described first vapor reaction source and the second vapor reaction source thermal cracking, and relies on sample stage
Heating substrate, to carry out epitaxial growth, wherein, described sample stage rotates around central point.
2. the epitaxial growth device of the compound semiconductor based on icp according to claim 1 is it is characterised in that described
The chemical bond in the first vapor reaction source is better than the chemical bond in described second vapor reaction source, and described icp excites unit to be mainly used in
Described first vapor reaction source ionization is excited to decompose, described sample stage can heat and be mainly used in described second vapor reaction source heat
Decompose.
3. the compound semiconductor based on icp according to claim 1 epitaxial growth device it is characterised in that
Described isolating device is distance separation device, and described vacuum reaction chamber is divided into plasma by described distance separation device
Region of discharge and plasma downstream area, wherein, described distance separation device filters first described in described plasma discharge region
Cation in the ionization catabolite in vapor reaction source and high energy neutral particle it is allowed to mental retardation active particle enter described etc. from
The thermal cracking products in daughter catchment and described second vapor reaction source react to carry out epitaxial growth.
4. the epitaxial growth device of the compound semiconductor based on icp according to claim 3 is it is characterised in that described
Distance separation device is to be horizontally set in described vacuum reaction chamber body, uniformly multiple filter openings metallic plates, described metallic plate
On be loaded with Dc bias.
5. the compound semiconductor based on icp according to claim 1 epitaxial growth device it is characterised in that
Time Isolation Unit when described isolating device is, when described, Time Isolation Unit is to be horizontally set on described vacuum response intracavity
, switched by electric field controls or magnetic field controlling switch control folding gate, when described, Time Isolation Unit will be anti-for described vacuum
Chamber is answered to be divided into plasma discharge region and plasma downstream area, wherein, when described, Time Isolation Unit is configured to:
When described icp excites unit to be working condition, when described Time Isolation Unit by described plasma discharge region and wait from
Daughter catchment isolates, and the ionization catabolite in described first vapor reaction source is limited in described plasma discharge region and enters
Row Natural Attenuation；
When described icp excites unit to be intermittent condition, when described Time Isolation Unit by described plasma discharge region and wait from
The connection of daughter catchment is so that the mental retardation active particle not decaying most enters described plasma downstream area and described second gaseous state
The thermal cracking products of reaction source react to carry out epitaxial growth.
6. the epitaxial growth device of the compound semiconductor based on icp according to claim 1 is it is characterised in that described
First air inlet excites unit adjacent to described icp, and described second air inlet is adjacent to described sample stage, described first gas circuit and
Described second gas circuit is configured to pulse and alternately each leads into described first vapor reaction source and institute to described vacuum reaction chamber
State the second vapor reaction source, and described icp excites unit to be configured to using the pulsed operation synchronous with described first gas circuit
Pattern.
7. the epitaxial growth device of the compound semiconductor based on icp according to claim 2 is it is characterised in that described
First vapor reaction source is nh3、n2、c3h8、sih4Or h2The combination of one or more of o.
8. the epitaxial growth device of the compound semiconductor based on icp according to claim 2 is it is characterised in that described
Second vapor reaction source is ga (ch3)3、in(ch3)3、al(ch3)3、zn(ch3)3Or si (ch3)4In one or more of combination.
9. a kind of epitaxial growth method of the compound semiconductor based on icp is it is characterised in that comprise the following steps:
On the sample stage of bottom substrate being placed in vacuum reaction chamber, described sample stage rotates around central point；
Each lead into the first vapor reaction source and the second vapor reaction source to described vacuum reaction chamber；
Described first vapor reaction source and the second vapor reaction source electricity is made by the way of electric induction coupling excites plasma icp
From decomposition, produce the low-energy plasma of high density；
Lift sample stage in vertical direction, to change the distance of sample stage and plasma generating area, adjust in reacting gas
Active mental retardation neutral atom and molecule, powered and high energy particle reach concentration and the energy of substrate surface；
By the isolating device of vacuum response intracavity, described vacuum reaction chamber is divided under plasma discharge region and plasma
Trip area, it is to avoid cation and high energy neutral particle produce bombardment to substrate, described isolating device is distance separation device or time
Isolating device；
Heat described substrate to preset temperature so that described first vapor reaction source and the second vapor reaction source thermal cracking, carry out outer
Epitaxial growth；
Described substrate is taken out from described vacuum reaction chamber.
10. the epitaxial growth method of the compound semiconductor based on icp according to claim 9 is it is characterised in that described
The chemical bond in the first vapor reaction source is better than the chemical bond in described second vapor reaction source, and described first vapor reaction source mainly leads to
Cross icp mode and ionize decomposition, mode of heating thermal cracking is mainly passed through in described second vapor reaction source.
The epitaxial growth method of 11. compound semiconductors based on icp according to claim 9 is it is characterised in that to institute
The ionization dissociating product stating the first vapor reaction source carries out spatial separation operation, that is, filter cation and high energy neutral particle, permits
Perhaps mental retardation active particle reaches described substrate surface and the thermal cracking products with described second vapor reaction source react outer to carry out
Epitaxial growth.
The epitaxial growth method of 12. compound semiconductors based on icp according to claim 9 is it is characterised in that pass through
Be horizontally set on described vacuum response intracavity, switched by electric field controls or magnetic field controlling switch control folding gate, will
Described vacuum reaction chamber is divided into plasma discharge region and plasma downstream area, and described first vapor reaction source ionization is decomposed
Product be limited in described plasma discharge region and carry out Natural Attenuation, and it is described so that the mental retardation active particle not decaying most is entered
The thermal cracking products in plasma downstream area and described second vapor reaction source react to carry out epitaxial growth.
The epitaxial growth method of 13. compound semiconductors based on icp according to any one of claim 9-12, its feature
It is, pulse alternately each leads into described first vapor reaction source and described second vapor reaction to described vacuum reaction chamber
Source, and be also carried out while being passed through described first vapor reaction source electric induction coupling excite.
The epitaxial growth method of 14. compound semiconductors based on icp according to claim 10 is it is characterised in that institute
First vapor reaction source of stating is nh3、n2、c3h8、sih4Or h2The combination of one or more of o.
The epitaxial growth method of 15. compound semiconductors based on icp according to claim 10 is it is characterised in that institute
Second vapor reaction source of stating is ga (ch3)3、in(ch3)3、al(ch3)3、zn(ch3)3Or si (ch3)4In one or more of group
Close.
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| CN102424955A (en) * | 2011-11-29 | 2012-04-25 | 中国科学院微电子研究所 | Novel gas-homogenizing structure |
| CN203429247U (en) * | 2013-08-15 | 2014-02-12 | 苏州思博露光伏能源科技有限公司 | Manufacturing device of PECVD (plasma enhanced chemical vapor deposition) flexible solar cells |
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| JPH07201764A (en) * | 1994-12-26 | 1995-08-04 | Semiconductor Energy Lab Co Ltd | Plasma vapor phase reaction |
| CN101128911A (en) * | 2005-02-28 | 2008-02-20 | 爱普斯碧德股份有限公司 | System and process for high-density, low-energy plasma enhanced vapor phase epitaxy |
| CN102424955A (en) * | 2011-11-29 | 2012-04-25 | 中国科学院微电子研究所 | Novel gas-homogenizing structure |
| CN203429247U (en) * | 2013-08-15 | 2014-02-12 | 苏州思博露光伏能源科技有限公司 | Manufacturing device of PECVD (plasma enhanced chemical vapor deposition) flexible solar cells |
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