CN103938272A - Plasma assisted epitaxial growth device and method - Google Patents
Plasma assisted epitaxial growth device and method Download PDFInfo
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- CN103938272A CN103938272A CN201410148920.8A CN201410148920A CN103938272A CN 103938272 A CN103938272 A CN 103938272A CN 201410148920 A CN201410148920 A CN 201410148920A CN 103938272 A CN103938272 A CN 103938272A
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Abstract
The invention discloses a plasma assisted epitaxial growth device and method. The device comprises a vacuum reaction chamber, a sample stage, a plasma excitation unit, a first air inlet, a second air inlet and an airflow regulation and ion control device, wherein the plasma excitation unit is positioned on the top of the vacuum reaction chamber; the first air inlet is used for introducing a first gas-state reaction source into the vacuum reaction chamber; the second air inlet is used for introducing a second gas-state reaction source into the vacuum reaction chamber; the airflow regulation and ion control device is positioned between the first air inlet and the sample stage and comprises a first gas channel group and a second gas channel group isolated from each other; the first gas channel group is used for controlling a flow field of the first gas-state reaction source; the second gas channel group is used for controlling a flow field of the second gas-state reaction source; the plasma excitation unit is used for exciting ionization and decomposition of the first gas-state reaction source; the sample stage can heat the second gas-state reaction source to be subjected to thermal cracking. The plasma assisted epitaxial growth device and method in the embodiment of the invention has the advantages that the device is low in growth temperature and suitable for growth of multiple nitride semiconductors.
Description
Technical field
The invention belongs to film growth apparatus technical field, be specifically related to a kind of epitaxial growth device of plasmaassisted and the epitaxial growth method of plasmaassisted.
Background technology
The nitride-based semiconductor that GaN, AlN, InN and alloy thereof be representative of take is widely used in ultraviolet, indigo plant, white light solid-state illumination, blue, green (light) laser and high power electronic device.Nitride-based semiconductor can adopt diverse ways growth, comprises molecular beam epitaxy (MBE) and metal organic-matter chemical vapour phase epitaxy (MOVPE).Wherein, MOVPE is the main method of current commercialization epitaxy nitride-based semiconductor.
Yet, existing MOVPE all need to be under higher temperature condition growing nitride, such as approximately 1000 ℃ of GaN epitaxial growth temperatures.Can only adopt resistant to elevated temperatures single crystalline substrate, as Al
2o
3, Si etc., epitaxy is size-constrained.More seriously, the required growth temperature of the nitride-based semiconductor of different metal is different, as approximately 1000 ℃ of GaN growth temperatures, and approximately 700 ℃ of InGaN, and AlN even surpasses 1200 ℃, and the nitride of extension heterogeneity is caused to great difficulty.
MOVPE epitaxy nitride, generally adopts organo-metallic (MO) source and nitrogenous source (as NH
3, N
2) reactive deposition forms.Higher growth temperature, is mainly used for the cracking of reactant and in the migration of substrate surface.The MOVPE epitaxy GaN of take is example, and reactant is generally Ga (CH
3)
3and NH
3, Ga (CH
3)
3approximately 500 ℃ of cracking temperatures, NH
3cracking temperature be about 700 ℃, then consider that GaN is in the migration of substrate surface, general epitaxial growth temperature approaches 1000 ℃.If adopt Ga (CH
3)
3and N
2carry out extension, due to N
2chemical bond is stronger, needs higher growth temperature.
The problem of bringing for MOVPE high growth temperature, the present invention proposes a kind of plasmaassisted MOVPE(PA-MOVPE) idea, wish to pass through low-temperature plasma scission reaction thing in advance, improve the potential energy of reactant atom, reach the object that reduces compound semiconductor epitaxial growth temperature.
Reactant gas produces after plasma body, positive ion, metastable atom molecule and neutral atom all can be used for generating compound semiconductor, but positive ion wherein and the neutral particle of high energy can cause bombardment to substrate, thereby affect the crystallization property of compound semiconductor.Take PAMOVPE growing GaN as example, and reactant gases adopts Ga (CH
3)
3and N
2in nitrogen plasma, wrap nitrogen containing plasma, nitrogen-atoms, nitrogen molecule, can participate in the generation of GaN in principle, but nitrogen ion and high energy neutral particle (as nitrogen-atoms, nitrogen molecule) can cause bombardment, Ga to go the problems such as absorption, GaN decomposition and point defect to substrate.Therefore, in order to improve the crystalline quality of the compound semiconductor of low-temperature epitaxy growth, must manage to reduce arriving the positive ion density at substrate place and the neutral-particle density of high energy, the arrival substrate participation reaction that simultaneously makes low energy active particle can try one's best many.
Summary of the invention
The present invention is intended to solve at least to a certain extent the technical problem that above-mentioned epitaxial temperature is high, be difficult to be applicable to different nitride semiconductor epitaxial growths.
For this reason, one object of the present invention is to propose the epitaxial growth device that a kind of epitaxial temperature is low, be suitable for multiple nitride-based semiconductor.
Another object of the present invention is to propose that a kind of epitaxial temperature is low, the low-temperature epitaxy growth method of the compound semiconductor that is suitable for multiple nitride-based semiconductor.
For achieving the above object, the epitaxial growth device of a kind of plasmaassisted of the embodiment of the present invention, can comprise: vacuum reaction chamber, sample table, described sample table is positioned at the bottom of vacuum reaction chamber, plasma exciatiaon unit, described plasma exciatiaon unit is positioned at the top of described vacuum reaction chamber, the first inlet mouth, for passing into the first vapor reaction source to described vacuum reaction chamber, the second inlet mouth, for passing into the second vapor reaction source to described vacuum reaction chamber, the gas flow-regulating ionic control device of holding concurrently, between described the first inlet mouth and described sample table, for regulating flow field and the plasma distribution in the vapor reaction source that passes into described vacuum reaction chamber, the the first gas passage group and the second gas passage group that comprise mutual isolation, described the first gas passage group is for controlling the flow field in described the first vapor reaction source, described the second gas passage group is for controlling the flow field in described the second vapor reaction source, wherein, described plasma exciatiaon unit is used for exciting the first vapor reaction source ionization to decompose, described sample table can heat described the second vapor reaction source thermo-cracking.
According to the epitaxial growth device of a kind of plasmaassisted of the invention described above embodiment, have advantages of that growth temperature is low, be applicable to multiple nitride semiconductor growing.
For achieving the above object, the epitaxial growth method of a kind of plasmaassisted of the embodiment of the present invention, can comprise the following steps: substrate is placed in the sample table of vacuum reaction chamber bottom; Heat described substrate to being applicable to epitaxially grown temperature; To described vacuum reaction chamber continuously or ALT pulse pass into the first vapor reaction source and the second vapor reaction source; Described the first vapor reaction source enters after described vacuum reaction chamber, by plasma exciatiaon unit, is excited generation plasma body, and then described plasma body arrives described substrate surface by the first gas passage group diffusion; Described the second vapor reaction source enters after described vacuum reaction chamber, by the second gas passage group diffusion, to described substrate surface thermo-cracking, then reacts to carry out epitaxy with described plasma body; Described substrate is taken out from described vacuum reaction chamber.
According to the epitaxial growth method of a kind of plasmaassisted of the invention described above embodiment, have advantages of that growth temperature is low, be suitable for multiple nitride semiconductor growing.
Additional aspect of the present invention and advantage in the following description part provide, and part will become obviously from the following description, or recognize by practice of the present invention.
Accompanying drawing explanation
Fig. 1 is the structural representation of epitaxial growth device of the plasmaassisted of the embodiment of the present invention.
Fig. 2 is the hold concurrently schematic diagram of ionic control device of the gas flow-regulating of the embodiment of the present invention.
Embodiment
Describe embodiments of the invention below in detail, the example of described embodiment is shown in the drawings, and wherein same or similar label represents same or similar element or has the element of identical or similar functions from start to finish.Below by the embodiment being described with reference to the drawings, be exemplary, be intended to for explaining the present invention, and can not be interpreted as limitation of the present invention.
First aspect present invention proposes a kind of epitaxial growth device of plasmaassisted, as shown in Figure 1, comprising: vacuum reaction chamber 10, sample table 20, plasma exciatiaon unit 30, the first inlet mouth 40, the second inlet mouth 50 and the air-flow plasma control apparatus 60 of holding concurrently.
Wherein, vacuum reaction chamber 10 can be cylindric substantially.In vacuum reaction chamber 10, be provided with vacuum pump system 10c, comprise mechanical pump and molecular pump, so that vacuum reaction chamber 10 keeps high vacuum or ultra-high vacuum state when not having gas to pass into, holding chamber internal gas pressure is constant when having gas to pass into.
Sample table 20 is located at the bottom of vacuum reaction chamber 10 conventionally, for carrier substrate.Preferably, sample table 20 can have recess 20a, so that carrier substrate better.Alternatively, sample table 20 can be rotated around central point, is conducive to Material growth and obtains more even.Preferably, sample table 20 is configured to lifting in the vertical direction.For example, can regulate sample table 20 is 1-500 millimeter apart from the distance of the bottom base of vacuum reaction chamber 10.At this moment can be by changing the distance of print platform 20 and plasma discharge region 10a, regulate active low energy neutral atom in reactant gases and molecule, charged and high energy particle to arrive concentration and the energy of substrate surface.Sample table 20 can also be provided with the metallic insulation screen of high infrared reflection around, for shielding the thermal radiation of sample table 20.
Plasma exciatiaon unit 30 can arrange the top of vacuum reaction chamber 10, mainly comprises radio frequency source (not shown), impedance matching network (not shown), plate coil 30a and quartz medium window 30b.The radiofrequency signal (for example radiofrequency signal of 13.56MHz) that radio frequency source produces is loaded on plate coil 30a through impedance matching network, then through quartz window 30b, with the form of jigger coupling, be coupled in vacuum reaction chamber 10, excite the first vapor reaction source ionization to decompose, produce the low-energy plasma body of high-density.
The first inlet mouth 40 is for passing into vacuum reaction chamber 10 by the first vapor reaction source.The first vapor reaction source can be the stronger material of chemical bond, for example nitrogen, oxygen, carbon oxides, particularly NH
3, N
2, C
3h
8, SiH
4or H
2the combination of one or more in O.It should be noted that, the first inlet mouth 40 can, for having the short tube of single outlet, can be also the air injection ring 40a with a plurality of even spray nozzles spaced apart.As shown in the figure, air injection ring 40a can make the first vapor reaction source pass into more equably vacuum reaction chamber 10.
The second inlet mouth 50 is for evenly passing into vacuum reaction chamber 10 by the second vapor reaction source.The second vapor reaction source can be the weak material of chemical bond, for example organometallics, particularly Ga (CH
3)
3, In (CH
3)
3, Al (CH
3)
3, Zn (CH
3)
3, Si (CH
3)
4or Mg
2(C
2h
5)
2in one or more combination.
Above-mentioned the first vapor reaction source and the second vapor reaction source epitaxial film finally obtaining that reacts can be GaN, InN, AlN, InGaN, AlGaN, SiC, ZnO etc. compound semiconductor epitaxial layer, is specially adapted to III iii-v nitride compound semiconductor epitaxial layers.
The air-flow plasma control apparatus 60 of holding concurrently comprises the first gas passage group 60a and the second gas passage group 60b.The air-flow plasma control apparatus 60 of holding concurrently can make the first vapor reaction source and the second vapor reaction source by the first gas passage group 60a and the second gas passage group 60b, evenly be diffused into substrate surface respectively, and retaining layer stream mode, the first gas passage group 60a can significantly reduce the amount of ions in plasma body by surface recombination simultaneously.Preferably, in giving the first gas passage group 60a, during added electric field, can further reduce the amount of ions that arrives substrate place, thereby reduce the ion bombardment of substrate surface.It should be noted that, the air-flow plasma control apparatus of holding concurrently can also be configured to liftable in the vertical direction.
The epitaxial growth device of a kind of plasmaassisted according to the above embodiment of the present invention, by the stronger reactant of plasma decomposes chemical bond, by type of heating breaking up chemical bonds a little less than, the temperature that can effectively reduce extension reaction, adapts to the epitaxially grown needs of multiple semiconductor film.
It should be noted that, the epitaxial growth device of this plasmaassisted can also be equipped with the equipment such as plasma body viewing window, permanent magnet, Langmuir plobe, film thickness monitor.Wherein permanent magnet can increase density and the homogeneity of plasma body.
Air-flow hold concurrently plasma control apparatus 60 internal structure as shown in Figure 2, also comprise according to this stacked upper strata metal sheet 60c, middle level metal sheet 60d and lower metal plate 60e.Its at the middle and upper levels metal sheet 60c edge, the edge of middle level metal sheet 60d and the edge 60e of lower metal plate respectively with airtight contact of sidewall of vacuum reaction chamber 10.The first inlet mouth 40 is positioned on the metal sheet 60c of upper strata.The second inlet mouth 50 is between upper strata metal sheet 60c and middle level metal sheet 60d.Between upper strata metal sheet 60c and lower metal plate 60e, have a plurality of the first column gas passages, these a plurality of first column gas passages form the first gas passage group 60a.Between middle level metal sheet 60d and lower metal plate 60e, have a plurality of the second column gas passages, these a plurality of second column gas passages form the second gas passage group 60b.Hence one can see that, and the first vapor reaction source and the second vapor reaction source are evenly diffused into substrate surface by the first gas passage group 60a and the second gas passage group 60b respectively, and retaining layer stream mode.
In one embodiment of the invention, the air-flow plasma control apparatus 60 of holding concurrently also comprises the cooling water inlet 70a between middle level metal sheet 60d and lower metal plate 60e, and the cooling water outlet 70b between upper strata metal sheet 60c and middle level metal sheet 60d.In this embodiment, between middle level metal sheet 60d and lower metal plate 60e, formed water-cooled path, Water cooling medium is by taking away heat, guarantee that air-flow holds concurrently plasma control apparatus 60 in the lower state of temperature, can effectively alleviate that crystal mass that pre-reaction brings worsens and the problem of gas passage obstruction.It should be noted that, although shown in Fig. 2 be the metal sheet of Homogeneous Circular filter opening, be only for the convenience of example but not restriction of the present invention can be also the geometrical shapies such as rectangular grid in further embodiments.
Second aspect present invention proposes a kind of epitaxial growth method of plasmaassisted, can comprise the following steps:
A. substrate is placed in the sample table of vacuum reaction chamber bottom;
B. heated substrate is to being applicable to epitaxially grown temperature;
C. or ALT pulse continuous to vacuum reaction chamber passes into the first vapor reaction source and the second vapor reaction source;
D. the first vapor reaction source enters after vacuum reaction chamber, by plasma exciatiaon unit, is excited generation plasma body, and then plasma body arrives substrate surface by the first gas passage group diffusion;
E. the second vapor reaction source enters after vacuum reaction chamber, by the second gas passage group diffusion, to substrate surface thermo-cracking, then reacts to carry out epitaxy with plasma body;
F. substrate is taken out from vacuum reaction chamber.
The epitaxial growth device of plasmaassisted according to the above embodiment of the present invention, by the stronger reactant of ICP mode breaking up chemical bonds, by type of heating breaking up chemical bonds a little less than, can effectively reduce the temperature of extension reaction, improve the quality of epitaxial film.
In an example of the present invention, ionization dissociating product to the first vapor reaction source carries out spatial separation operation, be filtering positive ion and high energy neutral particle, allow low energy active particle to reach substrate surface and react to carry out epitaxy with the thermal cracking products in the second vapor reaction source.Can avoid like this positive ion and high energy neutral particle to produce bombardment to substrate, cause epitaxial layer quality not good.
In an example of the present invention, sample table is configured to lifting in the vertical direction.At this moment can be by changing the distance of print platform and plasma discharge region, regulate active low energy neutral atom in reactant gases and molecule, charged and high energy particle to arrive concentration and the energy of substrate surface.
In an example of the present invention, the first vapor reaction source can be NH
3, N
2, C
3h
8or H
2the combination of one or more in O.
In an example of the present invention, the second vapor reaction source can be Ga (CH
3)
3, In (CH
3)
3, Al (CH
3)
3, Zn (CH
3)
3, SiH
4or Mg
2(C
2h
5)
2in one or more combination.
In an example of the present invention, the growth temperature of epitaxial film is lower than 1000 ℃.
In an example of the present invention, pulse alternately passes into respectively the first vapor reaction source and the second vapor reaction source to vacuum reaction chamber, and also carries out plasma exciatiaon when passing into the first vapor reaction source.
For making those skilled in the art understand better epitaxial growth device of the present invention and method, row are introduced for two example two below.
Embodiment 1
With reference to Fig. 1, describe, stationary substrate in sample table 20, then, utilizes vacuum pump system 10c that the gas of vacuum reaction chamber 10 inside is discharged, and makes base vacuum degree be less than or equal to 10
-6torr.By well heater and temperature controller heated substrate and make it to keep the temperature of 400～800 ℃, the gentle stream of vacuum reaction cavity wall regulates the ionic control device 60 of holding concurrently to keep temperature to be less than or equal to 120 ℃ by water-cooling system simultaneously, prevents that the first vapor reaction source and the second vapor reaction source from pre-reaction occurring when not arriving substrate.
In whole reaction process, by vacuum pump system 10c, make strong indoor pressure remain 0.01～10Torr, sample table 20 rotating speeds remain 1～1000 rev/min so that epitaxy is more even.
To the first inlet mouth 40, inject N
2flow is 1～100sccm, open ICP power supply simultaneously, RF power is 100～1500W, the 13.56MHz radiofrequency signal producing on coil 30a is coupled into plasma discharge region 10a by quartz medium window 30b, the nitrogen plasma that produces electro-induction coupling, these nitrogen plasmas are evenly ejected into substrate surface by the first gas passage group 60a, and the first gas passage group 60a adds the voltage of 0～100V.
To the second inlet mouth 50, inject and decompose the second relatively low gas Ga (CH of institute's energy requirement
3)
3, carrier gas is H
2, flow is 40sccm, H
2and Ga (CH
3)
3throughput ratio be 100:1～10:1, Ga (CH
3)
3by the second gas passage group 60b, be evenly ejected into substrate surface, after the thermolysis of substrate place, react with Nitrogen active species and generate GaN.
Embodiment 2
With reference to Fig. 1, describe, stationary substrate in sample table 20, then, utilizes vacuum pump system 10c that the gas of vacuum reaction chamber 10 inside is discharged, and makes base vacuum degree be less than or equal to 10
-6torr.By well heater and temperature controller heated substrate and make it to keep the temperature of 400～800 ℃, the gentle stream of vacuum reaction cavity wall regulates the ionic control device 60 of holding concurrently to keep temperature to be less than or equal to 120 ℃ by water-cooling system simultaneously, prevents that the first vapor reaction source and the second vapor reaction source from pre-reaction occurring when not arriving substrate.
In whole reaction process, by vacuum pump system 10c, make strong indoor pressure remain 0.01～10Torr, sample table 20 rotating speeds remain 1～1000 rev/min so that epitaxy is more even.
To the first inlet mouth 40, inject N
2flow is 1～100sccm, open ICP power supply simultaneously, RF power is 100～1500W, the 13.56MHz radiofrequency signal producing on coil 30a is coupled into plasma discharge region 10a by quartz medium window 30b, produces the nitrogen plasma of electro-induction coupling, and these nitrogen plasmas are evenly ejected into substrate surface by the first gas passage group 60a, the first gas passage group 60a adds the negative voltage of 0～100V.
To the second inlet mouth 50, inject and decompose the second relatively low gas Al (CH of institute's energy requirement
3)
3, carrier gas is H
2, flow is 40sccm, H
2and Al (CH
3)
3throughput ratio be 100:1～10:1, Al (CH
3)
3by the second gas passage group 60b, be evenly ejected into substrate surface, after the thermolysis of substrate place, react with Nitrogen active species and generate AlN.
In description of the invention, it will be appreciated that, term " " center ", " longitudinally ", " laterally ", " length ", " width ", " thickness ", " on ", D score, " front ", " afterwards ", " left side ", " right side ", " vertically ", " level ", " top ", " end " " interior ", " outward ", " clockwise ", " counterclockwise ", " axially ", " radially ", orientation or the position relationship of indications such as " circumferentially " are based on orientation shown in the drawings or position relationship, only the present invention for convenience of description and simplified characterization, rather than device or the element of indication or hint indication must have specific orientation, with specific orientation structure and operation, therefore can not be interpreted as limitation of the present invention.
In addition, term " first ", " second " be only for describing object, and can not be interpreted as indication or hint relative importance or the implicit quantity that indicates indicated technical characterictic.Thus, at least one this feature can be expressed or impliedly be comprised to the feature that is limited with " first ", " second ".In description of the invention, the implication of " a plurality of " is at least two, for example two, and three etc., unless otherwise expressly limited specifically.
In the present invention, unless otherwise clearly defined and limited, the terms such as term " installation ", " being connected ", " connection ", " fixing " should be interpreted broadly, and for example, can be to be fixedly connected with, and can be also to removably connect, or be integral; Can be mechanical connection, can be to be also electrically connected to; Can be to be directly connected, also can indirectly be connected by intermediary, can be the connection of two element internals or the interaction relationship of two elements, unless separately there is clear and definite restriction.For the ordinary skill in the art, can understand as the case may be above-mentioned term concrete meaning in the present invention.
In the present invention, unless otherwise clearly defined and limited, First Characteristic Second Characteristic " on " or D score can be that the first and second features directly contact, or the first and second features are by intermediary indirect contact.And, First Characteristic Second Characteristic " on ", " top " and " above " but First Characteristic directly over Second Characteristic or oblique upper, or only represent that First Characteristic level height is higher than Second Characteristic.First Characteristic Second Characteristic " under ", " below " and " below " can be First Characteristic under Second Characteristic or tiltedly, or only represent that First Characteristic level height is less than Second Characteristic.
In schema or any process of otherwise describing at this or method describe and can be understood to, represent to comprise that one or more is for realizing module, fragment or the part of code of executable instruction of the step of specific logical function or process, and the scope of the preferred embodiment of the present invention comprises other realization, wherein can be not according to order shown or that discuss, comprise according to related function by the mode of basic while or by contrary order, carry out function, this should be understood by embodiments of the invention person of ordinary skill in the field.
In the description of this specification sheets, the description of reference term " embodiment ", " some embodiment ", " example ", " concrete example " or " some examples " etc. means to be contained at least one embodiment of the present invention or example in conjunction with specific features, structure, material or the feature of this embodiment or example description.In this manual, to the schematic statement of above-mentioned term not must for be identical embodiment or example.And, the specific features of description, structure, material or feature can one or more embodiment in office or example in suitable mode combination.In addition,, not conflicting in the situation that, those skilled in the art can carry out combination and combination by the feature of the different embodiment that describe in this specification sheets or example and different embodiment or example.
Although illustrated and described embodiments of the invention above, be understandable that, above-described embodiment is exemplary, can not be interpreted as limitation of the present invention, and those of ordinary skill in the art can change above-described embodiment within the scope of the invention, modification, replacement and modification.
Claims (15)
1. the epitaxial growth device based on plasmaassisted, is characterized in that, comprising:
Vacuum reaction chamber;
Sample table, described sample table is positioned at the bottom of vacuum reaction chamber;
Plasma exciatiaon unit, described plasma exciatiaon unit is positioned at the top of described vacuum reaction chamber;
The first inlet mouth, for passing into the first vapor reaction source to described vacuum reaction chamber;
The second inlet mouth, for passing into the second vapor reaction source to described vacuum reaction chamber;
The gas flow-regulating ionic control device of holding concurrently, between described the first inlet mouth and described sample table, for regulating flow field and the plasma distribution in the vapor reaction source that passes into described vacuum reaction chamber, the the first gas passage group and the second gas passage group that comprise mutual isolation, described the first gas passage group is for controlling the flow field in described the first vapor reaction source, described the second gas passage group is for controlling the flow field in described the second vapor reaction source
Wherein, described plasma exciatiaon unit is used for exciting the first vapor reaction source ionization to decompose, and described sample table can heat described the second vapor reaction source thermo-cracking.
2. the epitaxial growth device of plasmaassisted according to claim 1, is characterized in that, described plasma exciatiaon unit is electro-induction coupling plasma.
3. the epitaxial growth device of plasmaassisted according to claim 1 and 2, is characterized in that, the described air-flow plasma control apparatus of holding concurrently, also comprises:
Stacked upper strata metal sheet, middle level metal sheet and lower metal plate according to this, wherein
The edge of the edge of described upper strata metal sheet, described middle level metal sheet and the edge of described lower metal plate respectively with airtight contact of sidewall of described vacuum reaction chamber;
Described the first inlet mouth is positioned on the metal sheet of described upper strata, and described the second inlet mouth is between described upper strata metal sheet and described middle level metal sheet;
Between described upper strata metal sheet and described lower metal plate, have a plurality of the first column gas passages, described a plurality of the first column gas passages form described the first gas passage group;
Between described middle level metal sheet and described lower metal plate, have a plurality of the second column gas passages, described a plurality of the second column gas passages form described the second gas passage group.
4. according to the epitaxial growth device of the plasmaassisted described in claim 1-3, it is characterized in that added electric field in described the first gas passage group.
5. according to the epitaxial growth device of the plasmaassisted described in claim 1-5, it is characterized in that, the chemical bond in described the first vapor reaction source is better than the chemical bond in described the second vapor reaction source, described plasma exciatiaon unit is mainly used in exciting described the first vapor reaction source ionization to decompose, and described sample table can heat and is mainly used in described the second vapor reaction source thermolysis.
6. according to the epitaxial growth device of plasmaassisted described in claim 1-5, it is characterized in that, described sample table is configured to liftable, rotatable in the horizontal direction in the vertical direction.
7. according to the epitaxial growth device of plasmaassisted described in claim 1-6, it is characterized in that, described sample table is provided with the metallic insulation screen of high infrared reflection around, for shielding the thermal radiation of sample table.
8. according to the epitaxial growth device of the plasmaassisted described in claim 1-7, it is characterized in that, the described air-flow plasma control apparatus of holding concurrently also comprises:
Cooling water inlet, between middle level metal sheet and lower metal plate; With
Cooling water outlet, between upper strata metal sheet and middle level metal sheet.
9. according to the epitaxial growth device of the plasmaassisted described in claim 1-8, it is characterized in that, the described air-flow plasma control apparatus of holding concurrently is configured to liftable in the vertical direction.
10. the epitaxial growth method based on plasmaassisted, is characterized in that, comprising:
Substrate is placed in the sample table of vacuum reaction chamber bottom;
Heat described substrate to being applicable to epitaxially grown temperature;
To described vacuum reaction chamber continuously or ALT pulse pass into the first vapor reaction source and the second vapor reaction source;
Described the first vapor reaction source enters after described vacuum reaction chamber, by plasma exciatiaon unit, is excited generation plasma body, and then described plasma body arrives described substrate surface by the first gas passage group diffusion;
Described the second vapor reaction source enters after described vacuum reaction chamber, by the second gas passage group diffusion, to described substrate surface thermo-cracking, then reacts to carry out epitaxy with described plasma body;
Described substrate is taken out from described vacuum reaction chamber.
11. epitaxial growth methods of plasmaassisted according to claim 10, is characterized in that, described epitaxial film is compound semiconductor layer.
12. according to the epitaxial growth method of plasmaassisted described in claim 10 or 11, it is characterized in that, described the first vapor reaction source is NH
3, N
2, H
2the combination of one or more in O.
13. according to the epitaxial growth method of plasmaassisted described in claim 10 or 11,, it is characterized in that, described the second vapor reaction source is Ga (CH
3)
3, In (CH
3)
3, Al (CH
3)
3, SiH
4or Mg
2(C
2h
5)
2in one or more combination.
14. according to the epitaxial growth method of plasmaassisted described in claim 10-13, it is characterized in that, the growth temperature of epitaxial film is lower than 1000 ℃.
15. according to the epitaxial growth method of plasmaassisted described in claim 10-14, it is characterized in that, pulse alternately passes into respectively described the first vapor reaction source and described the second vapor reaction source to described vacuum reaction chamber, and also carries out plasma exciatiaon when passing into described the first vapor reaction source.
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| CN104561940A (en) * | 2014-12-24 | 2015-04-29 | 苏州矩阵光电有限公司 | Plasma-assisted metal-organic chemical vapor deposition equipment and method |
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