KR101656534B1 - 마이크로리소그래피용 투영 대물렌즈 - Google Patents

마이크로리소그래피용 투영 대물렌즈 Download PDF

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Publication number
KR101656534B1
KR101656534B1 KR1020107022901A KR20107022901A KR101656534B1 KR 101656534 B1 KR101656534 B1 KR 101656534B1 KR 1020107022901 A KR1020107022901 A KR 1020107022901A KR 20107022901 A KR20107022901 A KR 20107022901A KR 101656534 B1 KR101656534 B1 KR 101656534B1
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South Korea
Prior art keywords
image
plane
projection objective
field
projection
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Korean (ko)
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KR20100124817A (ko
Inventor
요하네스 젤너
한스-위르겐 만
마틴 엔드레스
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칼 짜이스 에스엠티 게엠베하
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Priority claimed from DE200810000800 external-priority patent/DE102008000800A1/de
Priority claimed from DE200810033342 external-priority patent/DE102008033342A1/de
Application filed by 칼 짜이스 에스엠티 게엠베하 filed Critical 칼 짜이스 에스엠티 게엠베하
Publication of KR20100124817A publication Critical patent/KR20100124817A/ko
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70316—Details of optical elements, e.g. of Bragg reflectors, extreme ultraviolet [EUV] multilayer or bilayer mirrors or diffractive optical elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/02—Catoptric systems, e.g. image erecting and reversing system
    • G02B17/06—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror
    • G02B17/0647—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using more than three curved mirrors
    • G02B17/0663—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using more than three curved mirrors off-axis or unobscured systems in which not all of the mirrors share a common axis of rotational symmetry, e.g. at least one of the mirrors is warped, tilted or decentered with respect to the other elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Lenses (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020107022901A 2008-03-20 2009-02-28 마이크로리소그래피용 투영 대물렌즈 Active KR101656534B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE102008000800.1 2008-03-20
DE200810000800 DE102008000800A1 (de) 2008-03-20 2008-03-20 Projektionsobjektiv für die Mikrolithographie
DE200810033342 DE102008033342A1 (de) 2008-07-16 2008-07-16 Projektionsobjektiv für die Mikrolithographie
DE102008033342.5 2008-07-16

Publications (2)

Publication Number Publication Date
KR20100124817A KR20100124817A (ko) 2010-11-29
KR101656534B1 true KR101656534B1 (ko) 2016-09-09

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KR1020107022901A Active KR101656534B1 (ko) 2008-03-20 2009-02-28 마이크로리소그래피용 투영 대물렌즈

Country Status (6)

Country Link
US (2) US8629972B2 (enExample)
EP (2) EP2255251B1 (enExample)
JP (2) JP6112478B2 (enExample)
KR (1) KR101656534B1 (enExample)
CN (2) CN101978324B (enExample)
WO (1) WO2009115180A1 (enExample)

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KR101656534B1 (ko) 2008-03-20 2016-09-09 칼 짜이스 에스엠티 게엠베하 마이크로리소그래피용 투영 대물렌즈
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Also Published As

Publication number Publication date
EP2541324B1 (en) 2016-04-13
JP2015132853A (ja) 2015-07-23
CN101978324B (zh) 2013-04-03
US9304408B2 (en) 2016-04-05
CN102819196B (zh) 2016-03-09
JP6112478B2 (ja) 2017-04-12
US20140104588A1 (en) 2014-04-17
US8629972B2 (en) 2014-01-14
EP2255251B1 (en) 2017-04-26
EP2255251A1 (en) 2010-12-01
EP2541324A1 (en) 2013-01-02
US20110026003A1 (en) 2011-02-03
KR20100124817A (ko) 2010-11-29
WO2009115180A1 (en) 2009-09-24
CN101978324A (zh) 2011-02-16
JP2011517786A (ja) 2011-06-16
CN102819196A (zh) 2012-12-12
JP6249449B2 (ja) 2017-12-20

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