CN101978324B - 用于微光刻的投射物镜 - Google Patents

用于微光刻的投射物镜 Download PDF

Info

Publication number
CN101978324B
CN101978324B CN2009801100235A CN200980110023A CN101978324B CN 101978324 B CN101978324 B CN 101978324B CN 2009801100235 A CN2009801100235 A CN 2009801100235A CN 200980110023 A CN200980110023 A CN 200980110023A CN 101978324 B CN101978324 B CN 101978324B
Authority
CN
China
Prior art keywords
projection
image
projection objective
plane
field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN2009801100235A
Other languages
English (en)
Chinese (zh)
Other versions
CN101978324A (zh
Inventor
约翰尼斯·泽尔纳
汉斯-于尔根·曼
马丁·恩德雷斯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Carl Zeiss SMT GmbH
Original Assignee
Carl Zeiss SMT GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE200810000800 external-priority patent/DE102008000800A1/de
Priority claimed from DE200810033342 external-priority patent/DE102008033342A1/de
Application filed by Carl Zeiss SMT GmbH filed Critical Carl Zeiss SMT GmbH
Priority to CN201210286762.3A priority Critical patent/CN102819196B/zh
Publication of CN101978324A publication Critical patent/CN101978324A/zh
Application granted granted Critical
Publication of CN101978324B publication Critical patent/CN101978324B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70316—Details of optical elements, e.g. of Bragg reflectors, extreme ultraviolet [EUV] multilayer or bilayer mirrors or diffractive optical elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/02—Catoptric systems, e.g. image erecting and reversing system
    • G02B17/06—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror
    • G02B17/0647—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using more than three curved mirrors
    • G02B17/0663—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using more than three curved mirrors off-axis or unobscured systems in which not all of the mirrors share a common axis of rotational symmetry, e.g. at least one of the mirrors is warped, tilted or decentered with respect to the other elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Lenses (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CN2009801100235A 2008-03-20 2009-02-28 用于微光刻的投射物镜 Active CN101978324B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201210286762.3A CN102819196B (zh) 2008-03-20 2009-02-28 用于微光刻的投射物镜

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE102008000800.1 2008-03-20
DE200810000800 DE102008000800A1 (de) 2008-03-20 2008-03-20 Projektionsobjektiv für die Mikrolithographie
DE200810033342 DE102008033342A1 (de) 2008-07-16 2008-07-16 Projektionsobjektiv für die Mikrolithographie
DE102008033342.5 2008-07-16
PCT/EP2009/001448 WO2009115180A1 (en) 2008-03-20 2009-02-28 Projection objective for microlithography

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201210286762.3A Division CN102819196B (zh) 2008-03-20 2009-02-28 用于微光刻的投射物镜

Publications (2)

Publication Number Publication Date
CN101978324A CN101978324A (zh) 2011-02-16
CN101978324B true CN101978324B (zh) 2013-04-03

Family

ID=40638016

Family Applications (2)

Application Number Title Priority Date Filing Date
CN2009801100235A Active CN101978324B (zh) 2008-03-20 2009-02-28 用于微光刻的投射物镜
CN201210286762.3A Active CN102819196B (zh) 2008-03-20 2009-02-28 用于微光刻的投射物镜

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201210286762.3A Active CN102819196B (zh) 2008-03-20 2009-02-28 用于微光刻的投射物镜

Country Status (6)

Country Link
US (2) US8629972B2 (enExample)
EP (2) EP2255251B1 (enExample)
JP (2) JP6112478B2 (enExample)
KR (1) KR101656534B1 (enExample)
CN (2) CN101978324B (enExample)
WO (1) WO2009115180A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101656534B1 (ko) 2008-03-20 2016-09-09 칼 짜이스 에스엠티 게엠베하 마이크로리소그래피용 투영 대물렌즈
JP5525550B2 (ja) 2009-03-06 2014-06-18 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィ用の照明光学系及び光学系
EP2506061A4 (en) 2009-11-24 2017-12-20 Nikon Corporation Image-forming optical system, exposure apparatus, and device producing method
WO2012013241A1 (en) 2010-07-30 2012-02-02 Carl Zeiss Smt Gmbh Imaging optical system and projection exposure installation for microlithography with an imaging optical system of this type
CN102402135B (zh) * 2011-12-07 2013-06-05 北京理工大学 一种极紫外光刻投影物镜设计方法
CN102608737B (zh) * 2012-03-19 2013-10-02 北京理工大学 一种极紫外投影光刻物镜
CN102681357B (zh) * 2012-04-01 2014-02-05 北京理工大学 一种极紫外光刻投影物镜设计方法
CN102629082B (zh) * 2012-04-28 2013-11-06 北京理工大学 一种极紫外光刻复眼照明系统的设计方法
WO2014019617A1 (en) * 2012-08-01 2014-02-06 Carl Zeiss Smt Gmbh Imaging optical unit for a projection exposure apparatus
US9448343B2 (en) * 2013-03-15 2016-09-20 Kla-Tencor Corporation Segmented mirror apparatus for imaging and method of using the same
DE102015226531A1 (de) * 2015-04-14 2016-10-20 Carl Zeiss Smt Gmbh Abbildende Optik zur Abbildung eines Objektfeldes in ein Bildfeld sowie Projektionsbelichtungsanlage mit einer derartigen abbildenden Optik

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6072852A (en) * 1998-06-09 2000-06-06 The Regents Of The University Of California High numerical aperture projection system for extreme ultraviolet projection lithography
EP1840622A2 (de) * 2006-03-27 2007-10-03 Carl Zeiss SMT AG Projektionsobjektiv und Projektionsbelichtungsanlage mit negativer Schnittweite der Eintrittspupille

Family Cites Families (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6147914A (ja) * 1984-08-14 1986-03-08 Canon Inc 反射光学系
JP2000091209A (ja) 1998-09-14 2000-03-31 Nikon Corp 露光装置の製造方法、露光装置、及びデバイス製造方法
DE19908526A1 (de) 1999-02-26 2000-08-31 Zeiss Carl Fa Beleuchtungssystem mit Feldspiegeln zur Erzielung einer gleichförmigen Scanenergie
DE10138313A1 (de) * 2001-01-23 2002-07-25 Zeiss Carl Kollektor für Beleuchtugnssysteme mit einer Wellenlänge < 193 nm
US20050002090A1 (en) * 1998-05-05 2005-01-06 Carl Zeiss Smt Ag EUV illumination system having a folding geometry
DE10053587A1 (de) 2000-10-27 2002-05-02 Zeiss Carl Beleuchtungssystem mit variabler Einstellung der Ausleuchtung
US6859328B2 (en) * 1998-05-05 2005-02-22 Carl Zeiss Semiconductor Illumination system particularly for microlithography
US6396067B1 (en) 1998-05-06 2002-05-28 Koninklijke Philips Electronics N.V. Mirror projection system for a scanning lithographic projection apparatus, and lithographic apparatus comprising such a system
US6577443B2 (en) * 1998-05-30 2003-06-10 Carl-Zeiss Stiftung Reduction objective for extreme ultraviolet lithography
US6195201B1 (en) * 1999-01-27 2001-02-27 Svg Lithography Systems, Inc. Reflective fly's eye condenser for EUV lithography
US6361176B1 (en) 1999-07-09 2002-03-26 Nikon Corporation Reflection reduction projection optical system
JP2003506881A (ja) 1999-07-30 2003-02-18 カール ツァイス シュティフトゥング トレイディング アズ カール ツァイス Ｅｕｖ照明光学系の射出瞳における照明分布の制御
JP3840031B2 (ja) * 2000-03-09 2006-11-01 キヤノン株式会社 投射光学系及びそれを用いた投射型表示装置
JP2002015979A (ja) * 2000-06-29 2002-01-18 Nikon Corp 投影光学系、露光装置及び露光方法
TW573234B (en) * 2000-11-07 2004-01-21 Asml Netherlands Bv Lithographic projection apparatus and integrated circuit device manufacturing method
JP2002329655A (ja) 2001-05-01 2002-11-15 Canon Inc 反射型縮小投影光学系、露光装置及びデバイス製造方法
US7015491B2 (en) 2001-06-01 2006-03-21 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and device manufactured thereby, control system
JP2003045782A (ja) 2001-07-31 2003-02-14 Canon Inc 反射型縮小投影光学系及びそれを用いた露光装置
US6771352B2 (en) 2002-03-18 2004-08-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2004258541A (ja) * 2003-02-27 2004-09-16 Canon Inc 反射型光学系
DE10317667A1 (de) 2003-04-17 2004-11-18 Carl Zeiss Smt Ag Optisches Element für ein Beleuchtungssystem
DE10360414A1 (de) 2003-12-19 2005-07-21 Carl Zeiss Smt Ag EUV-Projektionsobjektiv sowie Verfahren zu dessen Herstellung
JP2005235959A (ja) * 2004-02-18 2005-09-02 Canon Inc 光発生装置及び露光装置
JP4522137B2 (ja) * 2004-05-07 2010-08-11 キヤノン株式会社 光学系の調整方法
US7184124B2 (en) * 2004-10-28 2007-02-27 Asml Holding N.V. Lithographic apparatus having an adjustable projection system and device manufacturing method
US7196343B2 (en) * 2004-12-30 2007-03-27 Asml Netherlands B.V. Optical element, lithographic apparatus including such an optical element, device manufacturing method, and device manufactured thereby
US7453645B2 (en) 2004-12-30 2008-11-18 Asml Netherlands B.V. Spectral purity filter, lithographic apparatus including such a spectral purity filter, device manufacturing method, and device manufactured thereby
US20060162739A1 (en) 2005-01-21 2006-07-27 Nikon Corporation Cleaning chuck in situ
JP2006245147A (ja) * 2005-03-01 2006-09-14 Canon Inc 投影光学系、露光装置及びデバイスの製造方法
EP1889110A1 (en) 2005-05-13 2008-02-20 Carl Zeiss SMT AG A six-mirror euv projection system with low incidence angles
DE102006043251A1 (de) * 2005-09-13 2007-03-15 Carl Zeiss Smt Ag Mikrolithographie-Projektionsobjektiv, Projektionsbelichtungsanlage mit einem derartigen Objektiv, Herstellungsverfahren mikrostrukturierter Bauteile mit einer derartigen Projektionsbelichtungsanlage sowie mit diesem Verfahren hergestelltes Bauteil
KR100962911B1 (ko) 2005-09-13 2010-06-10 칼 짜이스 에스엠테 아게 마이크로리소그라피 투영 광학 시스템, 디바이스 제작 방법 및 광학 표면을 설계하기 위한 방법
DE102006003375A1 (de) 2006-01-24 2007-08-09 Carl Zeiss Smt Ag Gruppenweise korrigiertes Objektiv
JP5479890B2 (ja) * 2006-04-07 2014-04-23 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィ投影光学システム、装置、及び製造方法
DE102006026032B8 (de) 2006-06-01 2012-09-20 Carl Zeiss Smt Gmbh Beleuchtungssystem zur Ausleuchtung eines vorgegebenen Beleuchtungsfeldes einer Objektoberfläche mit EUV-Strahlung
DE102006036064A1 (de) 2006-08-02 2008-02-07 Carl Zeiss Smt Ag Beleuchtungssystem für eine Projektionsbelichtungsanlage mit Wellenlängen ≦ 193 nm
JP2008042203A (ja) 2006-08-02 2008-02-21 Cark Zeiss Smt Ag 波長≦１９３ｎｍによる投影露光装置用の照明システム
DE102006056035A1 (de) 2006-11-28 2008-05-29 Carl Zeiss Smt Ag Beleuchtungsoptik für die EUV-Projektions-Mikrolithographie, Beleuchtungssystem mit einer derartigen Beleuchtungsoptik, Projektionsbelichtungsanlage mit einem derartigen Beleuchtungssystem, Verfahren zur Herstellung eines mikrostrukturierten Bauteils sowie durch das Verfahren hergestelltes mikrostrukturiertes Bauteil
EP1930771A1 (en) * 2006-12-04 2008-06-11 Carl Zeiss SMT AG Projection objectives having mirror elements with reflective coatings
DE102006059024A1 (de) 2006-12-14 2008-06-19 Carl Zeiss Smt Ag Projektionsbelichtungsanlage für die Mikrolithographie, Beleuchtungsoptik für eine derartige Projektionsbelichtungsanlage, Verfahren zum Betrieb einer derartigen Projektionsbelichtungsanlage, Verfahren zur Herstellung eines mikrostrukturierten Bauteils sowie durch das Verfahren hergestelltes mikrostrukturiertes Bauteil
JP2008158211A (ja) 2006-12-22 2008-07-10 Canon Inc 投影光学系及びそれを用いた露光装置
EP1950594A1 (de) 2007-01-17 2008-07-30 Carl Zeiss SMT AG Abbildende Optik, Projektionsbelichtunsanlage für die Mikrolithographie mit einer derartigen abbildenden Optik, Verfahren zur Herstellung eines mikrostrukturierten Bauteils mit einer derartigen Projektionsbelichtungsanlage, durch das Herstellungsverfahren gefertigtes mikrostrukturiertes Bauelement sowie Verwendung einer derartigen abbildenden Optik
US7889321B2 (en) * 2007-04-03 2011-02-15 Asml Netherlands B.V. Illumination system for illuminating a patterning device and method for manufacturing an illumination system
DE102008014832A1 (de) 2007-04-19 2008-10-23 Carl Zeiss Smt Ag Projektionsbelichtungsanlage für die Mikrolithographie
KR101656534B1 (ko) 2008-03-20 2016-09-09 칼 짜이스 에스엠티 게엠베하 마이크로리소그래피용 투영 대물렌즈
DE102008002749A1 (de) 2008-06-27 2009-12-31 Carl Zeiss Smt Ag Beleuchtungsoptik für die Mikrolithografie
JP5525550B2 (ja) * 2009-03-06 2014-06-18 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィ用の照明光学系及び光学系

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6072852A (en) * 1998-06-09 2000-06-06 The Regents Of The University Of California High numerical aperture projection system for extreme ultraviolet projection lithography
EP1840622A2 (de) * 2006-03-27 2007-10-03 Carl Zeiss SMT AG Projektionsobjektiv und Projektionsbelichtungsanlage mit negativer Schnittweite der Eintrittspupille

Also Published As

Publication number Publication date
EP2541324B1 (en) 2016-04-13
JP2015132853A (ja) 2015-07-23
KR101656534B1 (ko) 2016-09-09
US9304408B2 (en) 2016-04-05
CN102819196B (zh) 2016-03-09
JP6112478B2 (ja) 2017-04-12
US20140104588A1 (en) 2014-04-17
US8629972B2 (en) 2014-01-14
EP2255251B1 (en) 2017-04-26
EP2255251A1 (en) 2010-12-01
EP2541324A1 (en) 2013-01-02
US20110026003A1 (en) 2011-02-03
KR20100124817A (ko) 2010-11-29
WO2009115180A1 (en) 2009-09-24
CN101978324A (zh) 2011-02-16
JP2011517786A (ja) 2011-06-16
CN102819196A (zh) 2012-12-12
JP6249449B2 (ja) 2017-12-20

Similar Documents

Publication Publication Date Title
JP7565324B2 (ja) 物体視野を像視野内に結像するための投影光学ユニット及びそのような投影光学ユニットを含む投影露光装置
CN101978324B (zh) 用于微光刻的投射物镜
CN107810446B (zh) 将物场成像至像场中的成像光学单元，以及包括这种成像光学单元的投射曝光设备
CN102317866B (zh) 成像光学系统和具有此类型的成像光学系统的用于微光刻的投射曝光设备
CN102099742B (zh) 成像光学部件
CN107111242A (zh) Euv投射光刻的照明光学单元
JP2018534639A (ja) 物体視野を像視野内に結像するための結像光学ユニット及びそのような結像光学ユニットを含む投影露光装置
TWI539231B (zh) 成像光學系統、具有此類型成像光學系統之用於微影的投射曝光設備以及用於製造結構化組件的方法
CN108351499B (zh) 将物场成像到像场中的成像光学单元以及包括这样的成像光学单元的投射曝光设备
CN119404136A (zh) 用于将物场成像到像场的成像euv光学单元
CN117441122A (zh) 成像光学单元
CN120958378A (zh) 用于将物场成像至像场的成像euv光学单元
CN120981768A (zh) 用于将物场成像至像场的成像euv光学单元
CN119365823A (zh) 用于将物场成像到像场的成像euv光学单元
CN120958386A (zh) 用于将物场成像至像场的成像euv光学单元
CN117441116A (zh) 成像光学单元
TWI805619B (zh) 用於將物場成像至像場的成像光學單元
KR20250170648A (ko) 오브젝트 필드를 이미지 필드에 이미징하기 위한 이미징 euv 광학 유닛
CN103109225B (zh) 成像光学系统

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant