CN101978324B - 用于微光刻的投射物镜 - Google Patents

用于微光刻的投射物镜 Download PDF

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Publication number
CN101978324B
CN101978324B CN2009801100235A CN200980110023A CN101978324B CN 101978324 B CN101978324 B CN 101978324B CN 2009801100235 A CN2009801100235 A CN 2009801100235A CN 200980110023 A CN200980110023 A CN 200980110023A CN 101978324 B CN101978324 B CN 101978324B
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China
Prior art keywords
projection
image
projection objective
plane
field
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CN2009801100235A
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English (en)
Chinese (zh)
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CN101978324A (zh
Inventor
约翰尼斯·泽尔纳
汉斯-于尔根·曼
马丁·恩德雷斯
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Carl Zeiss SMT GmbH
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Carl Zeiss SMT GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Priority claimed from DE200810000800 external-priority patent/DE102008000800A1/de
Priority claimed from DE200810033342 external-priority patent/DE102008033342A1/de
Application filed by Carl Zeiss SMT GmbH filed Critical Carl Zeiss SMT GmbH
Priority to CN201210286762.3A priority Critical patent/CN102819196B/zh
Publication of CN101978324A publication Critical patent/CN101978324A/zh
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70316—Details of optical elements, e.g. of Bragg reflectors, extreme ultraviolet [EUV] multilayer or bilayer mirrors or diffractive optical elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/02—Catoptric systems, e.g. image erecting and reversing system
    • G02B17/06—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror
    • G02B17/0647—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using more than three curved mirrors
    • G02B17/0663—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using more than three curved mirrors off-axis or unobscured systems in which not all of the mirrors share a common axis of rotational symmetry, e.g. at least one of the mirrors is warped, tilted or decentered with respect to the other elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
    • H10P76/00—

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Lenses (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CN2009801100235A 2008-03-20 2009-02-28 用于微光刻的投射物镜 Active CN101978324B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201210286762.3A CN102819196B (zh) 2008-03-20 2009-02-28 用于微光刻的投射物镜

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE200810000800 DE102008000800A1 (de) 2008-03-20 2008-03-20 Projektionsobjektiv für die Mikrolithographie
DE102008000800.1 2008-03-20
DE102008033342.5 2008-07-16
DE200810033342 DE102008033342A1 (de) 2008-07-16 2008-07-16 Projektionsobjektiv für die Mikrolithographie
PCT/EP2009/001448 WO2009115180A1 (en) 2008-03-20 2009-02-28 Projection objective for microlithography

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201210286762.3A Division CN102819196B (zh) 2008-03-20 2009-02-28 用于微光刻的投射物镜

Publications (2)

Publication Number Publication Date
CN101978324A CN101978324A (zh) 2011-02-16
CN101978324B true CN101978324B (zh) 2013-04-03

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CN2009801100235A Active CN101978324B (zh) 2008-03-20 2009-02-28 用于微光刻的投射物镜
CN201210286762.3A Active CN102819196B (zh) 2008-03-20 2009-02-28 用于微光刻的投射物镜

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US (2) US8629972B2 (enExample)
EP (2) EP2255251B1 (enExample)
JP (2) JP6112478B2 (enExample)
KR (1) KR101656534B1 (enExample)
CN (2) CN101978324B (enExample)
WO (1) WO2009115180A1 (enExample)

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JP6112478B2 (ja) * 2008-03-20 2017-04-12 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィのための投影対物系
KR101478400B1 (ko) 2009-03-06 2015-01-06 칼 짜이스 에스엠티 게엠베하 조명 광학 시스템 및 마이크로리소그래피용 광학 시스템
JPWO2011065374A1 (ja) 2009-11-24 2013-04-18 株式会社ニコン 結像光学系、露光装置、およびデバイス製造方法
EP2598931B1 (en) * 2010-07-30 2020-12-02 Carl Zeiss SMT GmbH Imaging optical system and projection exposure installation for microlithography with an imaging optical system of this type
CN102402135B (zh) * 2011-12-07 2013-06-05 北京理工大学 一种极紫外光刻投影物镜设计方法
CN102608737B (zh) * 2012-03-19 2013-10-02 北京理工大学 一种极紫外投影光刻物镜
CN102681357B (zh) * 2012-04-01 2014-02-05 北京理工大学 一种极紫外光刻投影物镜设计方法
CN102629082B (zh) * 2012-04-28 2013-11-06 北京理工大学 一种极紫外光刻复眼照明系统的设计方法
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Also Published As

Publication number Publication date
EP2255251B1 (en) 2017-04-26
CN102819196A (zh) 2012-12-12
EP2541324A1 (en) 2013-01-02
US9304408B2 (en) 2016-04-05
US20140104588A1 (en) 2014-04-17
EP2541324B1 (en) 2016-04-13
CN102819196B (zh) 2016-03-09
WO2009115180A1 (en) 2009-09-24
CN101978324A (zh) 2011-02-16
JP6112478B2 (ja) 2017-04-12
KR101656534B1 (ko) 2016-09-09
JP2015132853A (ja) 2015-07-23
JP6249449B2 (ja) 2017-12-20
US8629972B2 (en) 2014-01-14
US20110026003A1 (en) 2011-02-03
KR20100124817A (ko) 2010-11-29
EP2255251A1 (en) 2010-12-01
JP2011517786A (ja) 2011-06-16

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