KR101646666B1 - 발광 소자, 이 소자를 포함하는 발광 소자 패키지, 및 이 패키지를 포함하는 조명 장치 - Google Patents

발광 소자, 이 소자를 포함하는 발광 소자 패키지, 및 이 패키지를 포함하는 조명 장치 Download PDF

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KR101646666B1
KR101646666B1 KR1020150042676A KR20150042676A KR101646666B1 KR 101646666 B1 KR101646666 B1 KR 101646666B1 KR 1020150042676 A KR1020150042676 A KR 1020150042676A KR 20150042676 A KR20150042676 A KR 20150042676A KR 101646666 B1 KR101646666 B1 KR 101646666B1
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electrode
light emitting
emitting device
thickness
electrodes
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Korean (ko)
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이상열
김회준
정성호
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엘지이노텍 주식회사
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Priority to KR1020150042676A priority Critical patent/KR101646666B1/ko
Priority to JP2017549603A priority patent/JP6796078B2/ja
Priority to US15/561,432 priority patent/US10418523B2/en
Priority to CN201680018542.9A priority patent/CN107431108B/zh
Priority to PCT/KR2016/002637 priority patent/WO2016153214A1/ko
Priority to EP16769032.0A priority patent/EP3276678A4/en
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Publication of KR101646666B1 publication Critical patent/KR101646666B1/ko
Assigned to 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 reassignment 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 권리의 전부이전등록 Assignors: 엘지이노텍 주식회사
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8316—Multi-layer electrodes comprising at least one discontinuous layer
    • H01L33/36—
    • H01L33/62—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H01L2924/12041—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8515—Wavelength conversion means not being in contact with the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/853—Encapsulations characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/726—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked lead frame, conducting package substrate or heat sink

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KR1020150042676A 2015-03-26 2015-03-26 발광 소자, 이 소자를 포함하는 발광 소자 패키지, 및 이 패키지를 포함하는 조명 장치 Active KR101646666B1 (ko)

Priority Applications (6)

Application Number Priority Date Filing Date Title
KR1020150042676A KR101646666B1 (ko) 2015-03-26 2015-03-26 발광 소자, 이 소자를 포함하는 발광 소자 패키지, 및 이 패키지를 포함하는 조명 장치
JP2017549603A JP6796078B2 (ja) 2015-03-26 2016-03-16 発光素子及び発光素子パッケージ
US15/561,432 US10418523B2 (en) 2015-03-26 2016-03-16 Light-emitting device and light-emitting device package
CN201680018542.9A CN107431108B (zh) 2015-03-26 2016-03-16 发光器件和发光器件封装
PCT/KR2016/002637 WO2016153214A1 (ko) 2015-03-26 2016-03-16 발광 소자 및 발광 소자 패키지
EP16769032.0A EP3276678A4 (en) 2015-03-26 2016-03-16 Light-emitting device and light-emitting element package

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020150042676A KR101646666B1 (ko) 2015-03-26 2015-03-26 발광 소자, 이 소자를 포함하는 발광 소자 패키지, 및 이 패키지를 포함하는 조명 장치

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020160096031A Division KR102137750B1 (ko) 2016-07-28 2016-07-28 발광 소자

Publications (1)

Publication Number Publication Date
KR101646666B1 true KR101646666B1 (ko) 2016-08-08

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KR1020150042676A Active KR101646666B1 (ko) 2015-03-26 2015-03-26 발광 소자, 이 소자를 포함하는 발광 소자 패키지, 및 이 패키지를 포함하는 조명 장치

Country Status (6)

Country Link
US (1) US10418523B2 (https=)
EP (1) EP3276678A4 (https=)
JP (1) JP6796078B2 (https=)
KR (1) KR101646666B1 (https=)
CN (1) CN107431108B (https=)
WO (1) WO2016153214A1 (https=)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200092694A (ko) * 2019-01-25 2020-08-04 엘지이노텍 주식회사 반도체 소자
KR20200092693A (ko) * 2019-01-25 2020-08-04 엘지이노텍 주식회사 반도체 소자
KR102509964B1 (ko) 2022-05-10 2023-03-14 주식회사 레다즈 백라이트 유닛 바
KR20230056365A (ko) 2021-10-20 2023-04-27 주식회사 레다즈 실리콘 기반의 렌즈 형성 방법 및 이를 적용한 백라이트 유닛

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102471670B1 (ko) * 2016-02-11 2022-11-29 서울바이오시스 주식회사 고출력 발광 다이오드 및 그것을 갖는 발광 모듈
JP2019532029A (ja) * 2016-08-22 2019-11-07 アルデイラ セラピューティクス， インコーポレイテッド アルデヒド補足化合物およびその使用
US20180198029A1 (en) * 2017-01-09 2018-07-12 Glo Ab Semiconductor light emitting device including reflective element and method of making same
US11935982B2 (en) * 2020-04-22 2024-03-19 Osram Opto Semiconductors Gmbh Semiconductor structure arrangement, methods for producing a semiconductor structure arrangement and optoelectronic device
CN111525014B (zh) * 2020-04-27 2021-10-12 开发晶照明（厦门）有限公司 固态发光器件
CN111525009B (zh) * 2020-04-27 2022-02-22 开发晶照明（厦门）有限公司 半导体发光器件
CN121646071A (zh) * 2024-09-03 2026-03-10 台亚半导体股份有限公司 发光二极管

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990063050A (ko) * 1997-12-11 1999-07-26 포만 제프리 엘 전계 효과 트랜지스터 및 그의 제조 방법
KR20110135103A (ko) * 2010-06-10 2011-12-16 에스티에스반도체통신 주식회사 반도체 발광 소자 및 그 제조 방법
KR20120130846A (ko) * 2011-05-24 2012-12-04 엘지이노텍 주식회사 발광 소자 패키지
KR20140062945A (ko) * 2012-11-15 2014-05-27 엘지이노텍 주식회사 발광소자

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2786952B2 (ja) * 1991-02-27 1998-08-13 株式会社豊田中央研究所 窒化ガリウム系化合物半導体発光素子およびその製造方法
JPH0846237A (ja) 1994-07-27 1996-02-16 Nippon Telegr & Teleph Corp <Ntt> シリコン発光ダイオード
US6828596B2 (en) 2002-06-13 2004-12-07 Lumileds Lighting U.S., Llc Contacting scheme for large and small area semiconductor light emitting flip chip devices
CN100394621C (zh) 2005-07-29 2008-06-11 东莞市福地电子材料有限公司 氮化镓基发光二极管芯片的制造方法
JP2007049045A (ja) 2005-08-11 2007-02-22 Rohm Co Ltd 半導体発光素子およびこれを備えた半導体装置
JP5082504B2 (ja) 2006-03-31 2012-11-28 日亜化学工業株式会社 発光素子及び発光素子の製造方法
CN100580965C (zh) 2007-12-12 2010-01-13 厦门市三安光电科技有限公司 一种基于复合式低阻缓冲结构的薄膜led芯片器件及其制造方法
JP5349260B2 (ja) * 2009-11-19 2013-11-20 株式会社東芝 半導体発光装置及びその製造方法
CN102456793A (zh) * 2010-10-25 2012-05-16 佛山市奇明光电有限公司 发光二极管元件及其制造方法
JP4989773B1 (ja) * 2011-05-16 2012-08-01 株式会社東芝 半導体発光素子
CN202094166U (zh) * 2011-06-03 2011-12-28 广东银雨芯片半导体有限公司 一种具有反射型电流阻挡层的led芯片
WO2014014298A1 (ko) * 2012-07-18 2014-01-23 주식회사 세미콘라이트 반도체 발광소자의 제조 방법
JP5915504B2 (ja) * 2012-11-06 2016-05-11 日亜化学工業株式会社 半導体発光素子
KR101478761B1 (ko) * 2013-05-15 2015-01-02 주식회사 세미콘라이트 반도체 발광소자
CN103367618B (zh) * 2013-07-19 2016-04-13 深圳大道半导体有限公司 带光反射层的半导体发光芯片
KR101546929B1 (ko) * 2013-09-24 2015-08-25 서울바이오시스 주식회사 발광 다이오드 및 그것을 갖는 발광 다이오드 모듈
WO2015053595A1 (ko) * 2013-10-11 2015-04-16 주식회사 세미콘라이트 반도체 발광소자
JP6299336B2 (ja) * 2014-03-28 2018-03-28 日亜化学工業株式会社 発光素子及びそれを用いた発光装置
KR102162437B1 (ko) * 2014-05-15 2020-10-07 엘지이노텍 주식회사 발광 소자 및 이를 포함하는 발광 소자 패키지
CN104300069B (zh) * 2014-08-25 2017-06-16 大连德豪光电科技有限公司 高压led芯片及其制备方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990063050A (ko) * 1997-12-11 1999-07-26 포만 제프리 엘 전계 효과 트랜지스터 및 그의 제조 방법
KR20110135103A (ko) * 2010-06-10 2011-12-16 에스티에스반도체통신 주식회사 반도체 발광 소자 및 그 제조 방법
KR20120130846A (ko) * 2011-05-24 2012-12-04 엘지이노텍 주식회사 발광 소자 패키지
KR20140062945A (ko) * 2012-11-15 2014-05-27 엘지이노텍 주식회사 발광소자

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200092694A (ko) * 2019-01-25 2020-08-04 엘지이노텍 주식회사 반도체 소자
KR20200092693A (ko) * 2019-01-25 2020-08-04 엘지이노텍 주식회사 반도체 소자
KR102621918B1 (ko) 2019-01-25 2024-01-05 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 반도체 소자
KR102627863B1 (ko) 2019-01-25 2024-01-22 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 반도체 소자
KR20230056365A (ko) 2021-10-20 2023-04-27 주식회사 레다즈 실리콘 기반의 렌즈 형성 방법 및 이를 적용한 백라이트 유닛
KR102509964B1 (ko) 2022-05-10 2023-03-14 주식회사 레다즈 백라이트 유닛 바

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JP2018509770A (ja) 2018-04-05
WO2016153214A1 (ko) 2016-09-29
US20180122991A1 (en) 2018-05-03
CN107431108A (zh) 2017-12-01
CN107431108B (zh) 2019-11-08
US10418523B2 (en) 2019-09-17
EP3276678A1 (en) 2018-01-31
JP6796078B2 (ja) 2020-12-02
EP3276678A4 (en) 2018-11-21

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