KR101642524B1 - 반도체 몸체 및 반도체 몸체 제조 방법 - Google Patents

반도체 몸체 및 반도체 몸체 제조 방법 Download PDF

Info

Publication number
KR101642524B1
KR101642524B1 KR1020107020378A KR20107020378A KR101642524B1 KR 101642524 B1 KR101642524 B1 KR 101642524B1 KR 1020107020378 A KR1020107020378 A KR 1020107020378A KR 20107020378 A KR20107020378 A KR 20107020378A KR 101642524 B1 KR101642524 B1 KR 101642524B1
Authority
KR
South Korea
Prior art keywords
semiconductor layer
type semiconductor
type
dopant
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020107020378A
Other languages
English (en)
Korean (ko)
Other versions
KR20110015510A (ko
Inventor
마틴 스트라스부르그
한스-쥬르겐 루가워
빈센트 그롤리어
베르톨드 한
리차드 플로터
Original Assignee
오스람 옵토 세미컨덕터스 게엠베하
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 오스람 옵토 세미컨덕터스 게엠베하 filed Critical 오스람 옵토 세미컨덕터스 게엠베하
Publication of KR20110015510A publication Critical patent/KR20110015510A/ko
Application granted granted Critical
Publication of KR101642524B1 publication Critical patent/KR101642524B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/8215—Bodies characterised by crystalline imperfections, e.g. dislocations; characterised by the distribution of dopants, e.g. delta-doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H10H20/8252—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN characterised by the dopants
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures

Landscapes

  • Led Devices (AREA)
  • Light Receiving Elements (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Manufacturing Of Electric Cables (AREA)
  • Photovoltaic Devices (AREA)
KR1020107020378A 2008-06-13 2009-05-28 반도체 몸체 및 반도체 몸체 제조 방법 Active KR101642524B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102008028345.2 2008-06-13
DE102008028345A DE102008028345A1 (de) 2008-06-13 2008-06-13 Halbleiterkörper und Verfahren zur Herstellung eines Halbleiterkörpers
PCT/DE2009/000756 WO2009149687A1 (de) 2008-06-13 2009-05-28 Halbleiterkörper und verfahren zur herstellung eines halbleiterkörpers

Publications (2)

Publication Number Publication Date
KR20110015510A KR20110015510A (ko) 2011-02-16
KR101642524B1 true KR101642524B1 (ko) 2016-07-25

Family

ID=41131617

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020107020378A Active KR101642524B1 (ko) 2008-06-13 2009-05-28 반도체 몸체 및 반도체 몸체 제조 방법

Country Status (9)

Country Link
US (1) US8581264B2 (https=)
EP (1) EP2286469B1 (https=)
JP (1) JP5661614B2 (https=)
KR (1) KR101642524B1 (https=)
CN (1) CN101971372B (https=)
AT (1) ATE540432T1 (https=)
DE (1) DE102008028345A1 (https=)
TW (1) TWI396305B (https=)
WO (1) WO2009149687A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI466343B (zh) * 2012-01-06 2014-12-21 華夏光股份有限公司 發光二極體裝置
DE102013104192A1 (de) * 2013-04-25 2014-10-30 Osram Opto Semiconductors Gmbh Halbleiterbauelement mit einer Zwischenschicht
EP3459123B1 (en) * 2016-05-20 2020-03-18 Lumileds LLC Methods for using remote plasma chemical vapor deposition (rp-cvd) and sputtering deposition to grow layers in light emitting devices
KR101931798B1 (ko) * 2017-09-19 2018-12-21 주식회사 썬다이오드코리아 다중 터널 정션 구조를 가지는 발광 다이오드

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003068745A (ja) 2001-06-11 2003-03-07 Lumileds Lighting Us Llc 埋込みｐ型ＧａＮ層におけるアクセプタを活性化する方法
JP2004134750A (ja) 2002-09-19 2004-04-30 Toyoda Gosei Co Ltd ｐ型ＩＩＩ族窒化物系化合物半導体の製造方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US58465A (en) * 1866-10-02 Improvement in carriage-shackles
US104399A (en) * 1870-06-21 Improvement in cultivators
US97269A (en) * 1869-11-30 Harrison berdan and john bantly
US197104A (en) * 1877-11-13 Improvement in trusses
US187568A (en) * 1877-02-20 Improvement in harness-saddle pads
US203407A (en) * 1878-05-07 Improvement in piano-forte actions
US90900A (en) * 1869-06-01 Improved wooden shoe
JPH10242586A (ja) * 1997-02-24 1998-09-11 Fuji Electric Co Ltd Ｉｉｉ 族窒化物半導体装置およびその製造方法
JP3916361B2 (ja) * 2000-02-18 2007-05-16 独立行政法人科学技術振興機構 低抵抗ｐ型単結晶ＺｎＳ薄膜およびその製造方法
US20020157596A1 (en) * 2001-04-30 2002-10-31 Stockman Stephen A. Forming low resistivity p-type gallium nitride
JP4233268B2 (ja) * 2002-04-23 2009-03-04 シャープ株式会社 窒化物系半導体発光素子およびその製造方法
TW561637B (en) 2002-10-16 2003-11-11 Epistar Corp LED having contact layer with dual dopant state
KR20050093319A (ko) * 2004-03-18 2005-09-23 삼성전기주식회사 발광효율이 개선된 질화물 반도체 발광소자 및 그 제조방법
US7061026B2 (en) * 2004-04-16 2006-06-13 Arima Optoelectronics Corp. High brightness gallium nitride-based light emitting diode with transparent conducting oxide spreading layer
US7095052B2 (en) * 2004-10-22 2006-08-22 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Method and structure for improved LED light output
US7720124B2 (en) * 2005-03-03 2010-05-18 Panasonic Corporation Semiconductor device and fabrication method thereof
DE102005035722B9 (de) 2005-07-29 2021-11-18 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung
TWI277226B (en) * 2005-10-24 2007-03-21 Formosa Epitaxy Inc Light emitting diode
DE102007019079A1 (de) * 2007-01-26 2008-07-31 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
DE102007018307A1 (de) 2007-01-26 2008-07-31 Osram Opto Semiconductors Gmbh Halbleiterchip und Verfahren zur Herstellung eines Halbleiterchips
US7759670B2 (en) * 2007-06-12 2010-07-20 SemiLEDs Optoelectronics Co., Ltd. Vertical LED with current guiding structure

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003068745A (ja) 2001-06-11 2003-03-07 Lumileds Lighting Us Llc 埋込みｐ型ＧａＮ層におけるアクセプタを活性化する方法
JP2004134750A (ja) 2002-09-19 2004-04-30 Toyoda Gosei Co Ltd ｐ型ＩＩＩ族窒化物系化合物半導体の製造方法

Also Published As

Publication number Publication date
TW201019508A (en) 2010-05-16
CN101971372A (zh) 2011-02-09
TWI396305B (zh) 2013-05-11
DE102008028345A1 (de) 2009-12-17
EP2286469A1 (de) 2011-02-23
CN101971372B (zh) 2013-05-15
WO2009149687A1 (de) 2009-12-17
ATE540432T1 (de) 2012-01-15
EP2286469B1 (de) 2012-01-04
US20110073902A1 (en) 2011-03-31
JP2011523219A (ja) 2011-08-04
JP5661614B2 (ja) 2015-01-28
KR20110015510A (ko) 2011-02-16
US8581264B2 (en) 2013-11-12

Similar Documents

Publication Publication Date Title
TWI323948B (en) Opto-electronic semiconductor chip
CN101427431B (zh) 具有隧道结的高效发光二极管
KR101418190B1 (ko) 전류 차단 구조들을 가지는 발광소자들 및 전류 차단 구조들을 가지는 발광소자들의 제조방법들
KR101386817B1 (ko) Ｌｅｄ 반도체 소자 및 그의 이용
KR101706888B1 (ko) GaN LED 및 그 형성 방법
KR20110030542A (ko) 광전 소자 제조 방법 및 광전 소자
KR20100134593A (ko) 광전 반도체칩 및 그 제조 방법
KR20100099286A (ko) 반도체 발광 장치를 위한 콘택트
JP2008085337A (ja) 半導体ボディおよび半導体チップ
KR20150103291A (ko) 고성능 헤테로구조 발광 소자 및 방법
KR20090121274A (ko) 산화아연 다중 접합 광전지 및 광전자 소자
JP5872154B2 (ja) 発光素子及びその製造方法
Chen et al. Crack-free InGaN multiple quantum wells light-emitting diodes structures transferred from Si (111) substrate onto electroplating copper submount with embedded electrodes
KR101642524B1 (ko) 반도체 몸체 및 반도체 몸체 제조 방법
TWI443856B (zh) 半導體晶片及製造半導體晶片之方法
KR101645755B1 (ko) 광전 반도체 소자
JP7085008B2 (ja) 発光ダイオード
KR101249432B1 (ko) 박막 반도체 칩의 제조 방법
KR100700529B1 (ko) 전류 확산층을 구비한 발광 다이오드 및 그 제조 방법
CN100550444C (zh) 用于制造薄膜半导体芯片的方法以及薄膜半导体芯片
KR20160115902A (ko) 발광 소자 및 그 제조 방법
US7713770B2 (en) Fabrication method of nitride semiconductor light emitting device and nitride semiconductor light emitting device thereby
KR101170193B1 (ko) 전류 차단 구조들을 가지는 발광소자들 및 전류 차단구조들을 가지는 발광소자들의 제조방법들
KR20110081650A (ko) 발광 소자 및 그 제조 방법
Luo et al. Vertical InGaN multiple quantum wells light-emitting diodes structures transferred from Si (111) substrate onto electroplating copper submount with through-holes

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

A201 Request for examination
AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

AMND Amendment
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

AMND Amendment
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

J201 Request for trial against refusal decision
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PJ0201 Trial against decision of rejection

St.27 status event code: A-3-3-V10-V11-apl-PJ0201

PB0901 Examination by re-examination before a trial

St.27 status event code: A-6-3-E10-E12-rex-PB0901

B701 Decision to grant
PB0701 Decision of registration after re-examination before a trial

St.27 status event code: A-3-4-F10-F13-rex-PB0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

FPAY Annual fee payment

Payment date: 20190711

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

U11 Full renewal or maintenance fee paid

Free format text: ST27 STATUS EVENT CODE: A-4-4-U10-U11-OTH-PR1001 (AS PROVIDED BY THE NATIONAL OFFICE)

Year of fee payment: 10