DE102008028345A1 - Halbleiterkörper und Verfahren zur Herstellung eines Halbleiterkörpers - Google Patents
Halbleiterkörper und Verfahren zur Herstellung eines Halbleiterkörpers Download PDFInfo
- Publication number
- DE102008028345A1 DE102008028345A1 DE102008028345A DE102008028345A DE102008028345A1 DE 102008028345 A1 DE102008028345 A1 DE 102008028345A1 DE 102008028345 A DE102008028345 A DE 102008028345A DE 102008028345 A DE102008028345 A DE 102008028345A DE 102008028345 A1 DE102008028345 A1 DE 102008028345A1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor layer
- type
- type semiconductor
- dopant
- semiconductor body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 252
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 239000002019 doping agent Substances 0.000 claims abstract description 61
- 239000001257 hydrogen Substances 0.000 claims description 29
- 229910052739 hydrogen Inorganic materials 0.000 claims description 29
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 28
- 230000004913 activation Effects 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 14
- 230000005855 radiation Effects 0.000 claims description 11
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical group [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 10
- 230000035699 permeability Effects 0.000 claims description 10
- 229910052749 magnesium Inorganic materials 0.000 claims description 9
- 239000011777 magnesium Substances 0.000 claims description 9
- 239000010409 thin film Substances 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 5
- 230000003213 activating effect Effects 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 2
- 238000004020 luminiscence type Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 148
- 239000000758 substrate Substances 0.000 description 16
- -1 nitride compound Chemical class 0.000 description 6
- 239000002800 charge carrier Substances 0.000 description 5
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 239000000370 acceptor Substances 0.000 description 4
- 230000005693 optoelectronics Effects 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 2
- BUHVIAUBTBOHAG-FOYDDCNASA-N (2r,3r,4s,5r)-2-[6-[[2-(3,5-dimethoxyphenyl)-2-(2-methylphenyl)ethyl]amino]purin-9-yl]-5-(hydroxymethyl)oxolane-3,4-diol Chemical compound COC1=CC(OC)=CC(C(CNC=2C=3N=CN(C=3N=CN=2)[C@H]2[C@@H]([C@H](O)[C@@H](CO)O2)O)C=2C(=CC=CC=2)C)=C1 BUHVIAUBTBOHAG-FOYDDCNASA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- FKSZLDCMQZJMFN-UHFFFAOYSA-N [Mg].[Pb] Chemical compound [Mg].[Pb] FKSZLDCMQZJMFN-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000006735 deficit Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/8215—Bodies characterised by crystalline imperfections, e.g. dislocations; characterised by the distribution of dopants, e.g. delta-doping
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
- H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
- H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
- H10H20/8252—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN characterised by the dopants
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
- H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
Landscapes
- Led Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Manufacturing Of Electric Cables (AREA)
- Photovoltaic Devices (AREA)
- Light Receiving Elements (AREA)
Priority Applications (9)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102008028345A DE102008028345A1 (de) | 2008-06-13 | 2008-06-13 | Halbleiterkörper und Verfahren zur Herstellung eines Halbleiterkörpers |
| KR1020107020378A KR101642524B1 (ko) | 2008-06-13 | 2009-05-28 | 반도체 몸체 및 반도체 몸체 제조 방법 |
| JP2011512826A JP5661614B2 (ja) | 2008-06-13 | 2009-05-28 | 半導体ボディおよび半導体ボディの製造方法 |
| AT09761309T ATE540432T1 (de) | 2008-06-13 | 2009-05-28 | Halbleiterkörper und verfahren zur herstellung eines halbleiterkörpers |
| US12/922,864 US8581264B2 (en) | 2008-06-13 | 2009-05-28 | Semiconductor body and method of producing a semiconductor body |
| PCT/DE2009/000756 WO2009149687A1 (de) | 2008-06-13 | 2009-05-28 | Halbleiterkörper und verfahren zur herstellung eines halbleiterkörpers |
| CN2009801090568A CN101971372B (zh) | 2008-06-13 | 2009-05-28 | 半导体本体和制造半导体本体的方法 |
| EP09761309A EP2286469B1 (de) | 2008-06-13 | 2009-05-28 | Halbleiterkörper und verfahren zur herstellung eines halbleiterkörpers |
| TW098119476A TWI396305B (zh) | 2008-06-13 | 2009-06-11 | 半導體本體及其製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102008028345A DE102008028345A1 (de) | 2008-06-13 | 2008-06-13 | Halbleiterkörper und Verfahren zur Herstellung eines Halbleiterkörpers |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE102008028345A1 true DE102008028345A1 (de) | 2009-12-17 |
Family
ID=41131617
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE102008028345A Withdrawn DE102008028345A1 (de) | 2008-06-13 | 2008-06-13 | Halbleiterkörper und Verfahren zur Herstellung eines Halbleiterkörpers |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US8581264B2 (https=) |
| EP (1) | EP2286469B1 (https=) |
| JP (1) | JP5661614B2 (https=) |
| KR (1) | KR101642524B1 (https=) |
| CN (1) | CN101971372B (https=) |
| AT (1) | ATE540432T1 (https=) |
| DE (1) | DE102008028345A1 (https=) |
| TW (1) | TWI396305B (https=) |
| WO (1) | WO2009149687A1 (https=) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102013104192A1 (de) * | 2013-04-25 | 2014-10-30 | Osram Opto Semiconductors Gmbh | Halbleiterbauelement mit einer Zwischenschicht |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI466343B (zh) * | 2012-01-06 | 2014-12-21 | 華夏光股份有限公司 | 發光二極體裝置 |
| CN113078243B (zh) * | 2016-05-20 | 2024-05-28 | 亮锐控股有限公司 | 用于生长发光器件中的层的方法 |
| KR101931798B1 (ko) * | 2017-09-19 | 2018-12-21 | 주식회사 썬다이오드코리아 | 다중 터널 정션 구조를 가지는 발광 다이오드 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040058465A1 (en) * | 2002-09-19 | 2004-03-25 | Toyoda Gosei Co., Ltd. | Method for producing p-type Group III nitride compound semiconductor |
| US20060097269A1 (en) * | 2004-10-22 | 2006-05-11 | Lester Steven D | Method and structure for improved LED light output |
| US20060197104A1 (en) * | 2005-03-03 | 2006-09-07 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and fabrication method thereof |
| DE102007019079A1 (de) * | 2007-01-26 | 2008-07-31 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip |
| DE102007018307A1 (de) * | 2007-01-26 | 2008-07-31 | Osram Opto Semiconductors Gmbh | Halbleiterchip und Verfahren zur Herstellung eines Halbleiterchips |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US97269A (en) * | 1869-11-30 | Harrison berdan and john bantly | ||
| US187568A (en) * | 1877-02-20 | Improvement in harness-saddle pads | ||
| US104399A (en) * | 1870-06-21 | Improvement in cultivators | ||
| US90900A (en) * | 1869-06-01 | Improved wooden shoe | ||
| US197104A (en) * | 1877-11-13 | Improvement in trusses | ||
| US203407A (en) * | 1878-05-07 | Improvement in piano-forte actions | ||
| US58465A (en) * | 1866-10-02 | Improvement in carriage-shackles | ||
| JPH10242586A (ja) | 1997-02-24 | 1998-09-11 | Fuji Electric Co Ltd | Ｉｉｉ 族窒化物半導体装置およびその製造方法 |
| JP3916361B2 (ja) | 2000-02-18 | 2007-05-16 | 独立行政法人科学技術振興機構 | 低抵抗ｐ型単結晶ＺｎＳ薄膜およびその製造方法 |
| US20020157596A1 (en) | 2001-04-30 | 2002-10-31 | Stockman Stephen A. | Forming low resistivity p-type gallium nitride |
| US6537838B2 (en) * | 2001-06-11 | 2003-03-25 | Limileds Lighting, U.S., Llc | Forming semiconductor structures including activated acceptors in buried p-type III-V layers |
| JP4233268B2 (ja) | 2002-04-23 | 2009-03-04 | シャープ株式会社 | 窒化物系半導体発光素子およびその製造方法 |
| TW561637B (en) | 2002-10-16 | 2003-11-11 | Epistar Corp | LED having contact layer with dual dopant state |
| KR20050093319A (ko) * | 2004-03-18 | 2005-09-23 | 삼성전기주식회사 | 발광효율이 개선된 질화물 반도체 발광소자 및 그 제조방법 |
| US7061026B2 (en) * | 2004-04-16 | 2006-06-13 | Arima Optoelectronics Corp. | High brightness gallium nitride-based light emitting diode with transparent conducting oxide spreading layer |
| DE102005035722B9 (de) | 2005-07-29 | 2021-11-18 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung |
| TWI277226B (en) * | 2005-10-24 | 2007-03-21 | Formosa Epitaxy Inc | Light emitting diode |
| US7759670B2 (en) * | 2007-06-12 | 2010-07-20 | SemiLEDs Optoelectronics Co., Ltd. | Vertical LED with current guiding structure |
-
2008
- 2008-06-13 DE DE102008028345A patent/DE102008028345A1/de not_active Withdrawn
-
2009
- 2009-05-28 EP EP09761309A patent/EP2286469B1/de active Active
- 2009-05-28 AT AT09761309T patent/ATE540432T1/de active
- 2009-05-28 US US12/922,864 patent/US8581264B2/en active Active
- 2009-05-28 CN CN2009801090568A patent/CN101971372B/zh active Active
- 2009-05-28 WO PCT/DE2009/000756 patent/WO2009149687A1/de not_active Ceased
- 2009-05-28 JP JP2011512826A patent/JP5661614B2/ja not_active Expired - Fee Related
- 2009-05-28 KR KR1020107020378A patent/KR101642524B1/ko active Active
- 2009-06-11 TW TW098119476A patent/TWI396305B/zh not_active IP Right Cessation
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040058465A1 (en) * | 2002-09-19 | 2004-03-25 | Toyoda Gosei Co., Ltd. | Method for producing p-type Group III nitride compound semiconductor |
| US20060097269A1 (en) * | 2004-10-22 | 2006-05-11 | Lester Steven D | Method and structure for improved LED light output |
| US20060197104A1 (en) * | 2005-03-03 | 2006-09-07 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and fabrication method thereof |
| DE102007019079A1 (de) * | 2007-01-26 | 2008-07-31 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip |
| DE102007018307A1 (de) * | 2007-01-26 | 2008-07-31 | Osram Opto Semiconductors Gmbh | Halbleiterchip und Verfahren zur Herstellung eines Halbleiterchips |
Non-Patent Citations (1)
| Title |
|---|
| I. Schnitzer et al., Appl. Phys. Lett. 63 (16), 18. Oktober 1993, 2174-2176 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102013104192A1 (de) * | 2013-04-25 | 2014-10-30 | Osram Opto Semiconductors Gmbh | Halbleiterbauelement mit einer Zwischenschicht |
| US9761758B2 (en) | 2013-04-25 | 2017-09-12 | Osram Opto Semiconductors Gmbh | Semiconductor component comprising an interlayer |
Also Published As
| Publication number | Publication date |
|---|---|
| US8581264B2 (en) | 2013-11-12 |
| EP2286469B1 (de) | 2012-01-04 |
| US20110073902A1 (en) | 2011-03-31 |
| JP2011523219A (ja) | 2011-08-04 |
| EP2286469A1 (de) | 2011-02-23 |
| KR20110015510A (ko) | 2011-02-16 |
| ATE540432T1 (de) | 2012-01-15 |
| CN101971372B (zh) | 2013-05-15 |
| TW201019508A (en) | 2010-05-16 |
| JP5661614B2 (ja) | 2015-01-28 |
| KR101642524B1 (ko) | 2016-07-25 |
| WO2009149687A1 (de) | 2009-12-17 |
| CN101971372A (zh) | 2011-02-09 |
| TWI396305B (zh) | 2013-05-11 |
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Inventor name: HAHN, BERTHOLD, DR., 93155 HEMAU, DE Inventor name: GROLIER, VINCENT, DR., 93047 REGENSBURG, DE Inventor name: STRASSBURG, MARTIN, DR., 93105 TEGERNHEIM, DE Inventor name: FLOETER, RICHARD, 93105 TEGERNHEIM, DE Inventor name: LUGAUER, HANS-JUERGEN, DR., 93161 SINZING, DE |
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