KR101634406B1 - 반도체 장치 - Google Patents

반도체 장치 Download PDF

Info

Publication number
KR101634406B1
KR101634406B1 KR1020107019817A KR20107019817A KR101634406B1 KR 101634406 B1 KR101634406 B1 KR 101634406B1 KR 1020107019817 A KR1020107019817 A KR 1020107019817A KR 20107019817 A KR20107019817 A KR 20107019817A KR 101634406 B1 KR101634406 B1 KR 101634406B1
Authority
KR
South Korea
Prior art keywords
chip
semiconductor chip
semiconductor device
semiconductor
radiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020107019817A
Other languages
English (en)
Korean (ko)
Other versions
KR20110030417A (ko
Inventor
토마스 제일러
레이너 윈디스
스테판 그루버
마르쿠스 키르슈
줄리어스 무스차웩
토르스텐 바데
허버트 브루너
스테펜 코럴
Original Assignee
오스람 옵토 세미컨덕터스 게엠베하
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 오스람 옵토 세미컨덕터스 게엠베하 filed Critical 오스람 옵토 세미컨덕터스 게엠베하
Publication of KR20110030417A publication Critical patent/KR20110030417A/ko
Application granted granted Critical
Publication of KR101634406B1 publication Critical patent/KR101634406B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/852Encapsulations
    • H10H20/853Encapsulations characterised by their shape
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/855Optical field-shaping means, e.g. lenses
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/83Electrodes
    • H10H20/831Electrodes characterised by their shape
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/855Optical field-shaping means, e.g. lenses
    • H10H20/856Reflecting means
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/857Interconnections, e.g. lead-frames, bond wires or solder balls
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations

Landscapes

  • Led Device Packages (AREA)
KR1020107019817A 2008-05-29 2009-04-20 반도체 장치 Active KR101634406B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102008025756.7 2008-05-29
DE102008025756.7A DE102008025756B4 (de) 2008-05-29 2008-05-29 Halbleiteranordnung

Publications (2)

Publication Number Publication Date
KR20110030417A KR20110030417A (ko) 2011-03-23
KR101634406B1 true KR101634406B1 (ko) 2016-06-28

Family

ID=41061228

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020107019817A Active KR101634406B1 (ko) 2008-05-29 2009-04-20 반도체 장치

Country Status (7)

Country Link
US (1) US8461616B2 (https=)
EP (1) EP2281315B1 (https=)
JP (1) JP2011521480A (https=)
KR (1) KR101634406B1 (https=)
CN (1) CN101971376B (https=)
DE (1) DE102008025756B4 (https=)
WO (1) WO2009143795A1 (https=)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9142740B2 (en) 2003-07-04 2015-09-22 Epistar Corporation Optoelectronic element and manufacturing method thereof
US10686106B2 (en) 2003-07-04 2020-06-16 Epistar Corporation Optoelectronic element
US9000461B2 (en) * 2003-07-04 2015-04-07 Epistar Corporation Optoelectronic element and manufacturing method thereof
DE102009017946A1 (de) 2009-04-17 2010-10-21 Osram Opto Semiconductors Gmbh Linse, optoelektronisches Bauelement aufweisend eine Linse und Verfahren zur Herstellung einer Linse
DE102009024425B4 (de) * 2009-06-09 2011-11-17 Diehl Aerospace Gmbh Anschlusseinrichtung für eine lichtemittierende Diode und Beleuchtungseinheit
DE102010055265A1 (de) * 2010-12-20 2012-06-21 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauteil
CN102651446B (zh) * 2011-02-25 2014-12-10 展晶科技(深圳)有限公司 发光二极管封装结构及光源装置
DE102011102350A1 (de) * 2011-05-24 2012-11-29 Osram Opto Semiconductors Gmbh Optisches Element, optoelektronisches Bauelement und Verfahren zur Herstellung dieser
DE102011102590A1 (de) * 2011-05-27 2012-11-29 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen von Leuchtdioden-Bauelementen
CN104040716B (zh) * 2012-01-17 2018-06-22 亮锐控股有限公司 以大角度发射光的半导体发光器件灯
DE102012102122A1 (de) * 2012-03-13 2013-09-19 Osram Opto Semiconductors Gmbh Flächenlichtquelle
DE102012102114B4 (de) * 2012-03-13 2021-09-16 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierendes Halbleiterbauteil, Beleuchtungsvorrichtung und Anzeigevorrichtung
US8889439B2 (en) * 2012-08-24 2014-11-18 Tsmc Solid State Lighting Ltd. Method and apparatus for packaging phosphor-coated LEDs
EP3033775B1 (en) * 2013-07-26 2019-09-11 Lumileds Holding B.V. Led dome with inner high index pillar
EP2854186A1 (en) * 2013-09-26 2015-04-01 Seoul Semiconductor Co., Ltd. Light source module, fabrication method therefor, and backlight unit including the same
CN105940262B (zh) 2014-01-23 2020-01-07 亮锐控股有限公司 具有自对准预制透镜的发光设备
JP2015165536A (ja) * 2014-03-03 2015-09-17 ウシオ電機株式会社 発光装置および発光モジュール
DE102014217986A1 (de) * 2014-03-27 2015-10-01 Tridonic Jennersdorf Gmbh LED Modul mit integrierter Sekundäroptik
KR102657885B1 (ko) 2015-10-19 2024-04-17 루미리즈 홀딩 비.브이. 텍스처화된 기판을 갖는 파장 변환된 발광 디바이스
CN109148674B (zh) 2017-06-28 2023-05-16 日亚化学工业株式会社 发光装置
JP6899412B2 (ja) * 2018-07-27 2021-07-07 住友化学株式会社 Ledデバイスの製造方法
US20230042041A1 (en) * 2020-01-13 2023-02-09 Osram Opto Semiconductors Gmbh Housing, optoelectronic semiconductor component and production method

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001203396A (ja) 2000-01-20 2001-07-27 Sanyo Electric Co Ltd 光照射装置
JP2004281606A (ja) * 2003-03-14 2004-10-07 Toyoda Gosei Co Ltd 発光装置およびその製造方法
JP2007242820A (ja) 2006-03-08 2007-09-20 Asahi Kasei Corp 発光デバイス及び発光デバイスモジュール

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5216805A (en) * 1990-12-12 1993-06-08 Eastman Kodak Company Method of manufacturing an optoelectronic device package
DE19625622A1 (de) 1996-06-26 1998-01-02 Siemens Ag Lichtabstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement
DE19638667C2 (de) 1996-09-20 2001-05-17 Osram Opto Semiconductors Gmbh Mischfarbiges Licht abstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement
DE59713024D1 (de) 1996-06-26 2010-01-28 Osram Opto Semiconductors Gmbh Lichtabstrahlender Halbleiterchip und Lichtabstrahlendes Halbleiterbauelement und Verfahren zu dessen Herstellung
DE10023353A1 (de) * 2000-05-12 2001-11-29 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung
US6345903B1 (en) * 2000-09-01 2002-02-12 Citizen Electronics Co., Ltd. Surface-mount type emitting diode and method of manufacturing same
US7064355B2 (en) * 2000-09-12 2006-06-20 Lumileds Lighting U.S., Llc Light emitting diodes with improved light extraction efficiency
US7053419B1 (en) * 2000-09-12 2006-05-30 Lumileds Lighting U.S., Llc Light emitting diodes with improved light extraction efficiency
TW474034B (en) 2000-11-07 2002-01-21 United Epitaxy Co Ltd LED and the manufacturing method thereof
KR100940943B1 (ko) 2001-08-24 2010-02-08 쇼오트 아게 전자 부품 제조 방법
WO2003019653A2 (de) * 2001-08-24 2003-03-06 Schott Glas Verfahren zum kontaktieren und gehäusen von integrierten schaltungen
EP1536487A4 (en) 2002-05-28 2008-02-06 Matsushita Electric Works Ltd ELECTROLUMINESCENT ELEMENT, LIGHT EMITTING DEVICE AND SURFACE EMISSION LIGHTING DEVICE USING THE SAME
JP2004128057A (ja) 2002-09-30 2004-04-22 Fuji Photo Film Co Ltd 発光装置およびその製造方法
US9142734B2 (en) 2003-02-26 2015-09-22 Cree, Inc. Composite white light source and method for fabricating
US7061065B2 (en) 2003-03-31 2006-06-13 National Chung-Hsing University Light emitting diode and method for producing the same
JP3897806B2 (ja) 2004-01-07 2007-03-28 松下電器産業株式会社 Led照明光源
US7361938B2 (en) * 2004-06-03 2008-04-22 Philips Lumileds Lighting Company Llc Luminescent ceramic for a light emitting device
US20050280016A1 (en) 2004-06-17 2005-12-22 Mok Thye L PCB-based surface mount LED device with silicone-based encapsulation structure
DE102004036157B4 (de) 2004-07-26 2023-03-16 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Elektromagnetische Strahlung emittierendes optoelektronisches Bauelement und Leuchtmodul
DE102004047640A1 (de) 2004-09-30 2006-04-13 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Gehäuse für ein optoelektronisches Bauelement
US7419839B2 (en) 2004-11-12 2008-09-02 Philips Lumileds Lighting Company, Llc Bonding an optical element to a light emitting device
KR20080006634A (ko) 2005-04-28 2008-01-16 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 리세스 내에 배치된 led를 포함하는 광원
DE102006037737A1 (de) 2005-12-09 2007-06-14 Osram Opto Semiconductors Gmbh Optische Vorrichtung, optoelektronische Vorrichtung und Verfahren zur Herstellung einer optoelektronischen Vorrichtung
TW200735327A (en) 2005-12-14 2007-09-16 Koninkl Philips Electronics Nv Collimation arrangement and illumination system and display device using the same
US7375379B2 (en) * 2005-12-19 2008-05-20 Philips Limileds Lighting Company, Llc Light-emitting device
US7798678B2 (en) * 2005-12-30 2010-09-21 3M Innovative Properties Company LED with compound encapsulant lens
TWI303105B (en) * 2006-01-11 2008-11-11 Advanced Semiconductor Eng Wafer level package for image sensor components and its fabricating method
US7674641B2 (en) 2006-04-12 2010-03-09 Atomic Energy Council Method for fabricating white-light-emitting flip-chip diode having silicon quantum dots
US7521862B2 (en) * 2006-11-20 2009-04-21 Philips Lumileds Lighting Co., Llc Light emitting device including luminescent ceramic and light-scattering material
US7964888B2 (en) * 2007-04-18 2011-06-21 Cree, Inc. Semiconductor light emitting device packages and methods
DE102007019776A1 (de) 2007-04-26 2008-10-30 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung einer Mehrzahl optoelektronischer Bauelemente
DE102007019775B4 (de) 2007-04-26 2024-11-28 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement
US7999283B2 (en) * 2007-06-14 2011-08-16 Cree, Inc. Encapsulant with scatterer to tailor spatial emission pattern and color uniformity in light emitting diodes
KR101378418B1 (ko) * 2007-11-01 2014-03-27 삼성전자주식회사 이미지센서 모듈 및 그 제조방법
JP2010161321A (ja) * 2009-01-09 2010-07-22 Panasonic Corp 光学デバイスおよびその製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001203396A (ja) 2000-01-20 2001-07-27 Sanyo Electric Co Ltd 光照射装置
JP2004281606A (ja) * 2003-03-14 2004-10-07 Toyoda Gosei Co Ltd 発光装置およびその製造方法
JP2007242820A (ja) 2006-03-08 2007-09-20 Asahi Kasei Corp 発光デバイス及び発光デバイスモジュール

Also Published As

Publication number Publication date
US8461616B2 (en) 2013-06-11
DE102008025756A1 (de) 2009-12-03
JP2011521480A (ja) 2011-07-21
EP2281315A1 (de) 2011-02-09
DE102008025756B4 (de) 2023-02-23
WO2009143795A1 (de) 2009-12-03
EP2281315B1 (de) 2018-10-17
CN101971376B (zh) 2013-01-02
CN101971376A (zh) 2011-02-09
KR20110030417A (ko) 2011-03-23
US20110266571A1 (en) 2011-11-03

Similar Documents

Publication Publication Date Title
KR101634406B1 (ko) 반도체 장치
JP5526232B2 (ja) モールドされた反射側壁コーティングを備える発光ダイオード
KR101639353B1 (ko) 반도체 발광장치 및 그 제조방법
US9601670B2 (en) Method to form primary optic with variable shapes and/or geometries without a substrate
JP5326705B2 (ja) 発光装置
JP6141248B2 (ja) 照明装置
JP5799988B2 (ja) 発光装置
TWI440208B (zh) 低側面的側發光之發光二極體
KR101010229B1 (ko) 발광 장치
KR101853067B1 (ko) 발광 소자 패키지
TWI780180B (zh) 發光裝置、整合式發光裝置及發光模組
CN113039653B (zh) 发光二极管封装
JP6020657B2 (ja) 発光装置
US10497846B2 (en) Light emitting device package
CN107833879A (zh) 发光装置
US10497827B2 (en) Light emitting device package
CN109994589B (zh) 发光器件封装
KR20190006889A (ko) 발광소자 패키지
JP6665143B2 (ja) 発光装置の製造方法
JP4925346B2 (ja) 発光装置
JP4820133B2 (ja) 発光装置
KR20190034016A (ko) 발광소자 패키지 및 조명 모듈
KR20190028014A (ko) 발광소자 패키지
KR20180042727A (ko) 조명 모듈 및 이를 포함하는 차량용 조명 장치

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

A201 Request for examination
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

FPAY Annual fee payment

Payment date: 20190613

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

FPAY Annual fee payment

Payment date: 20200611

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

FPAY Annual fee payment

Payment date: 20210611

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

FPAY Annual fee payment

Payment date: 20220609

Year of fee payment: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000