DE102008025756B4 - Halbleiteranordnung - Google Patents

Halbleiteranordnung Download PDF

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Publication number
DE102008025756B4
DE102008025756B4 DE102008025756.7A DE102008025756A DE102008025756B4 DE 102008025756 B4 DE102008025756 B4 DE 102008025756B4 DE 102008025756 A DE102008025756 A DE 102008025756A DE 102008025756 B4 DE102008025756 B4 DE 102008025756B4
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DE
Germany
Prior art keywords
semiconductor
chip
semiconductor chip
semiconductor arrangement
arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE102008025756.7A
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German (de)
English (en)
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DE102008025756A1 (de
Inventor
Dr. Windisch Reiner
Thomas Zeiler
Stefan Gruber
Markus Kirsch
Julius Muschaweck
Torsten Baade
Herbert Brunner
Dr. Köhler Steffen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to DE102008025756.7A priority Critical patent/DE102008025756B4/de
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Priority to CN200980109077XA priority patent/CN101971376B/zh
Priority to EP09753511.6A priority patent/EP2281315B1/de
Priority to JP2011510815A priority patent/JP2011521480A/ja
Priority to US12/995,181 priority patent/US8461616B2/en
Priority to KR1020107019817A priority patent/KR101634406B1/ko
Priority to PCT/DE2009/000542 priority patent/WO2009143795A1/de
Publication of DE102008025756A1 publication Critical patent/DE102008025756A1/de
Application granted granted Critical
Publication of DE102008025756B4 publication Critical patent/DE102008025756B4/de
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/853—Encapsulations characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations

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  • Led Device Packages (AREA)
DE102008025756.7A 2008-05-29 2008-05-29 Halbleiteranordnung Active DE102008025756B4 (de)

Priority Applications (7)

Application Number Priority Date Filing Date Title
DE102008025756.7A DE102008025756B4 (de) 2008-05-29 2008-05-29 Halbleiteranordnung
EP09753511.6A EP2281315B1 (de) 2008-05-29 2009-04-20 Halbleiteranordnung
JP2011510815A JP2011521480A (ja) 2008-05-29 2009-04-20 半導体装置
US12/995,181 US8461616B2 (en) 2008-05-29 2009-04-20 Semiconductor arrangement
CN200980109077XA CN101971376B (zh) 2008-05-29 2009-04-20 半导体装置
KR1020107019817A KR101634406B1 (ko) 2008-05-29 2009-04-20 반도체 장치
PCT/DE2009/000542 WO2009143795A1 (de) 2008-05-29 2009-04-20 Halbleiteranordnung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102008025756.7A DE102008025756B4 (de) 2008-05-29 2008-05-29 Halbleiteranordnung

Publications (2)

Publication Number Publication Date
DE102008025756A1 DE102008025756A1 (de) 2009-12-03
DE102008025756B4 true DE102008025756B4 (de) 2023-02-23

Family

ID=41061228

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102008025756.7A Active DE102008025756B4 (de) 2008-05-29 2008-05-29 Halbleiteranordnung

Country Status (7)

Country Link
US (1) US8461616B2 (https=)
EP (1) EP2281315B1 (https=)
JP (1) JP2011521480A (https=)
KR (1) KR101634406B1 (https=)
CN (1) CN101971376B (https=)
DE (1) DE102008025756B4 (https=)
WO (1) WO2009143795A1 (https=)

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US9000461B2 (en) * 2003-07-04 2015-04-07 Epistar Corporation Optoelectronic element and manufacturing method thereof
DE102009017946A1 (de) * 2009-04-17 2010-10-21 Osram Opto Semiconductors Gmbh Linse, optoelektronisches Bauelement aufweisend eine Linse und Verfahren zur Herstellung einer Linse
DE102009024425B4 (de) * 2009-06-09 2011-11-17 Diehl Aerospace Gmbh Anschlusseinrichtung für eine lichtemittierende Diode und Beleuchtungseinheit
DE102010055265A1 (de) * 2010-12-20 2012-06-21 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauteil
CN102651446B (zh) * 2011-02-25 2014-12-10 展晶科技(深圳)有限公司 发光二极管封装结构及光源装置
DE102011102350A1 (de) * 2011-05-24 2012-11-29 Osram Opto Semiconductors Gmbh Optisches Element, optoelektronisches Bauelement und Verfahren zur Herstellung dieser
DE102011102590A1 (de) * 2011-05-27 2012-11-29 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen von Leuchtdioden-Bauelementen
CN104040716B (zh) * 2012-01-17 2018-06-22 亮锐控股有限公司 以大角度发射光的半导体发光器件灯
DE102012102122A1 (de) * 2012-03-13 2013-09-19 Osram Opto Semiconductors Gmbh Flächenlichtquelle
DE102012102114B4 (de) * 2012-03-13 2021-09-16 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierendes Halbleiterbauteil, Beleuchtungsvorrichtung und Anzeigevorrichtung
US8889439B2 (en) * 2012-08-24 2014-11-18 Tsmc Solid State Lighting Ltd. Method and apparatus for packaging phosphor-coated LEDs
WO2015011586A1 (en) * 2013-07-26 2015-01-29 Koninklijke Philips N.V. Led dome with inner high index pillar
EP2854186A1 (en) * 2013-09-26 2015-04-01 Seoul Semiconductor Co., Ltd. Light source module, fabrication method therefor, and backlight unit including the same
US10416356B2 (en) 2014-01-23 2019-09-17 Lumileds, LLC Light emitting device with self-aligning preformed lens
JP2015165536A (ja) * 2014-03-03 2015-09-17 ウシオ電機株式会社 発光装置および発光モジュール
DE102014217986A1 (de) * 2014-03-27 2015-10-01 Tridonic Jennersdorf Gmbh LED Modul mit integrierter Sekundäroptik
JP6852066B2 (ja) 2015-10-19 2021-03-31 ルミレッズ ホールディング ベーフェー テクスチャ基板を有する波長変換式発光デバイス
CN109148674B (zh) 2017-06-28 2023-05-16 日亚化学工业株式会社 发光装置
JP6899412B2 (ja) * 2018-07-27 2021-07-07 住友化学株式会社 Ｌｅｄデバイスの製造方法
JP7439268B2 (ja) * 2020-01-13 2024-02-27 エイエムエス－オスラム インターナショナル ゲーエムベーハー ケーシング、オプトエレクトロニクス半導体構成部材および製造方法

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DE19625622A1 (de) 1996-06-26 1998-01-02 Siemens Ag Lichtabstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement
DE19638667A1 (de) 1996-09-20 1998-04-02 Siemens Ag Mischfarbiges Licht abstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement
US20020053872A1 (en) 2000-11-07 2002-05-09 Kuang-Neng Yang Light emitting diode and method of making the same
US20050032383A1 (en) 2003-03-31 2005-02-10 Ray-Hua Horng Method for producing light emitting diode
US20050231953A1 (en) 1996-06-26 2005-10-20 Osram Gmbh Light-radiating semiconductor component with a luminescence conversion element
US20070063202A1 (en) 2001-08-24 2007-03-22 Jurgen Leib Method for producing electronic components
WO2007069198A2 (en) 2005-12-14 2007-06-21 Koninklijke Philips Electronics N.V. Collimation arrangement and illumination system and display device using the same
US20070243660A1 (en) 2006-04-12 2007-10-18 Atomic Energy Council - Institute Of Nuclear Energy Research Method for fabricating white-light-emitting flip-chip diode having silicon quantum dots

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Publication number Priority date Publication date Assignee Title
DE19625622A1 (de) 1996-06-26 1998-01-02 Siemens Ag Lichtabstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement
US20050231953A1 (en) 1996-06-26 2005-10-20 Osram Gmbh Light-radiating semiconductor component with a luminescence conversion element
DE19638667A1 (de) 1996-09-20 1998-04-02 Siemens Ag Mischfarbiges Licht abstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement
US20020053872A1 (en) 2000-11-07 2002-05-09 Kuang-Neng Yang Light emitting diode and method of making the same
US20070063202A1 (en) 2001-08-24 2007-03-22 Jurgen Leib Method for producing electronic components
US20050032383A1 (en) 2003-03-31 2005-02-10 Ray-Hua Horng Method for producing light emitting diode
WO2007069198A2 (en) 2005-12-14 2007-06-21 Koninklijke Philips Electronics N.V. Collimation arrangement and illumination system and display device using the same
US20070243660A1 (en) 2006-04-12 2007-10-18 Atomic Energy Council - Institute Of Nuclear Energy Research Method for fabricating white-light-emitting flip-chip diode having silicon quantum dots

Also Published As

Publication number Publication date
DE102008025756A1 (de) 2009-12-03
WO2009143795A1 (de) 2009-12-03
EP2281315A1 (de) 2011-02-09
US8461616B2 (en) 2013-06-11
KR101634406B1 (ko) 2016-06-28
CN101971376A (zh) 2011-02-09
CN101971376B (zh) 2013-01-02
EP2281315B1 (de) 2018-10-17
US20110266571A1 (en) 2011-11-03
KR20110030417A (ko) 2011-03-23
JP2011521480A (ja) 2011-07-21

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