JP2011521480A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2011521480A JP2011521480A JP2011510815A JP2011510815A JP2011521480A JP 2011521480 A JP2011521480 A JP 2011521480A JP 2011510815 A JP2011510815 A JP 2011510815A JP 2011510815 A JP2011510815 A JP 2011510815A JP 2011521480 A JP2011521480 A JP 2011521480A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/041—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L31/00
- H01L25/042—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L31/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Abstract
Description
・ビーム透過体を供給するないしは製造する
・半導体チップを供給するないしは製造する
・ビーム透過体の下面が上を向くようにビーム透過体を位置付けする
・付着接続部を構成する材料を、このビーム透過体下面上に載置する、ここでビーム透過体下面は、垂直方向において上を向いている、
・付着接続部を構成する材料に半導体チップ載置するないしは、当該材料内に半導体チップを押しつける
・ここでチップ上面は、ビーム透過体の下面に向いている。
Claims (15)
- 表面実装可能な半導体装置(1)であって、
・取り付け面(6)と、
・相互に対向しているチップ上面(22)とチップ下面(21)とを備えている少なくとも1とのオプトエレクトロニクス半導体チップ(2)と、
・少なくとも部分的にビームを透過するビーム透過体(3)と、
・前記半導体装置(1)を電気的に接触接続するための少なくとも2つの電気的接続箇所(5)とを有しており、
前記ビーム透過体はビーム透過体下面(30)を有しており、前記チップ上面(22)が当該ビーム透過体下面(30)の方を向くように、当該ビーム透過体下面(30)に前記半導体チップ(2)が取り付けられており、
前記接続箇所(5)は、前記ビーム透過体(3)をラテラル方向で越えず、前記半導体チップ(2)と反対側の接続箇所面は、前記半導体装置(1)を半導体装置の取り付け面(6)で制限している、
ことを特徴とする半導体装置(1)。 - 少なくとも部分的にビームを透過する付着接続部(4)を有しており、当該付着接続部を介して、前記半導体チップ(2)とビーム透過体(3)とが相互に接続されている、請求項1記載の半導体装置(1)。
- 前記チップ下面(21)には前記付着接続部(4)は設けられていない、請求項2記載の半導体装置(1)。
- 前記付着接続部(4)は、前記チップ上面(22)に制限されている、請求項2記載の半導体装置(1)。
- 接続箇所(5)がSMTコンタクト可能である、請求項1から4までのいずれか1項記載の半導体装置(1)。
- 前記接続箇所(5)は前記半導体チップ(2)をラテラル方向で越えない、請求項1から5までのいずれか1項記載の半導体装置(1)。
- 前記接続箇所(5)は直接的にチップ下面(21)に接しており、当該チップ下面(21)に対して平行に配向されており、平らに構成されている、請求項1から6までのいずれか1項記載の半導体装置(1)。
- 前記ビーム透過体(3)は、ビーム透過体下面(30)に切欠きを有しており、当該切欠き内に前記半導体チップ(2)が収容されている、請求項1から7までのいずれか1項記載の半導体装置(1)。
- 前記ビーム透過体(3)のラテラル方向の拡がりと、前記半導体チップ(2)のラテラル方向の拡がりは40%を下回る偏差を有している、請求項1から8までのいずれか1項記載の半導体装置(1)。
- 前記チップ下面(21)は少なくとも部分的に自由にアクセス可能である、請求項1から9までのいずれか1項記載の半導体装置(1)。
- 前記ビーム透過体(3)または付着接続部(4)は少なくとも1つの添加物を、少なくとも1つのフィルタリング手段(8)、変換手段(7)または散乱手段の形で含んでいる、請求項1から10までのいずれか1項記載の半導体装置(1)。
- 前記添加物は、前記ビーム透過体(2)または付着接続部(4)内に不均一に分配されている、請求項11記載の半導体装置(1)。
- 前記付着接続部(4)は不均一な厚さを有している、請求項11または12記載の半導体装置(1)。
- 前記付着接続部(4)の光学的な屈折率は、前記ビーム透過体(3)の光学的な屈折率よりも低い、請求項1から13までのいずれか1項記載の半導体装置。
- 前記半導体チップ(2)は、少なくとも1つの中間担体(9)に取り付けられている、請求項1から14までのいずれか1項記載の半導体装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102008025756.7A DE102008025756B4 (de) | 2008-05-29 | 2008-05-29 | Halbleiteranordnung |
DE102008025756.7 | 2008-05-29 | ||
PCT/DE2009/000542 WO2009143795A1 (de) | 2008-05-29 | 2009-04-20 | Halbleiteranordnung |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011521480A true JP2011521480A (ja) | 2011-07-21 |
JP2011521480A5 JP2011521480A5 (ja) | 2012-02-02 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011510815A Pending JP2011521480A (ja) | 2008-05-29 | 2009-04-20 | 半導体装置 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8461616B2 (ja) |
EP (1) | EP2281315B1 (ja) |
JP (1) | JP2011521480A (ja) |
KR (1) | KR101634406B1 (ja) |
CN (1) | CN101971376B (ja) |
DE (1) | DE102008025756B4 (ja) |
WO (1) | WO2009143795A1 (ja) |
Cited By (8)
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JP2014045194A (ja) * | 2012-08-24 | 2014-03-13 | Tsmc Solid State Lighting Ltd | 蛍光体コートledのパッケージング方法と装置 |
JP2015165536A (ja) * | 2014-03-03 | 2015-09-17 | ウシオ電機株式会社 | 発光装置および発光モジュール |
JP2016525288A (ja) * | 2013-07-26 | 2016-08-22 | コーニンクレッカ フィリップス エヌ ヴェKoninklijke Philips N.V. | 内部高屈折率ピラーを有するledドーム |
JP2017504215A (ja) * | 2014-01-23 | 2017-02-02 | コーニンクレッカ フィリップス エヌ ヴェKoninklijke Philips N.V. | セルフアライン式プリフォームレンズを有する発光デバイス |
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2008
- 2008-05-29 DE DE102008025756.7A patent/DE102008025756B4/de active Active
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- 2009-04-20 CN CN200980109077XA patent/CN101971376B/zh active Active
- 2009-04-20 US US12/995,181 patent/US8461616B2/en active Active
- 2009-04-20 KR KR1020107019817A patent/KR101634406B1/ko active IP Right Grant
- 2009-04-20 JP JP2011510815A patent/JP2011521480A/ja active Pending
- 2009-04-20 WO PCT/DE2009/000542 patent/WO2009143795A1/de active Application Filing
- 2009-04-20 EP EP09753511.6A patent/EP2281315B1/de active Active
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JP2015156522A (ja) * | 2012-08-24 | 2015-08-27 | 台積固態照明股▲ふん▼有限公司 | 蛍光体コートledのパッケージング方法と装置 |
JP2014045194A (ja) * | 2012-08-24 | 2014-03-13 | Tsmc Solid State Lighting Ltd | 蛍光体コートledのパッケージング方法と装置 |
JP2016525288A (ja) * | 2013-07-26 | 2016-08-22 | コーニンクレッカ フィリップス エヌ ヴェKoninklijke Philips N.V. | 内部高屈折率ピラーを有するledドーム |
US10895669B2 (en) | 2014-01-23 | 2021-01-19 | Lumileds Llc | Light emitting device with self-aligning preformed lens |
JP2017504215A (ja) * | 2014-01-23 | 2017-02-02 | コーニンクレッカ フィリップス エヌ ヴェKoninklijke Philips N.V. | セルフアライン式プリフォームレンズを有する発光デバイス |
US11313996B2 (en) | 2014-01-23 | 2022-04-26 | Lumileds Llc | Light emitting device with self-aligning preformed lens |
JP2015165536A (ja) * | 2014-03-03 | 2015-09-17 | ウシオ電機株式会社 | 発光装置および発光モジュール |
US11329203B2 (en) | 2017-06-28 | 2022-05-10 | Nichia Corporation | Light emitting device including covering member and optical member |
JP2020025089A (ja) * | 2018-07-27 | 2020-02-13 | 住友化学株式会社 | Ledデバイス、ledデバイスの製造方法および積層体 |
WO2020022080A1 (ja) * | 2018-07-27 | 2020-01-30 | 住友化学株式会社 | Ledデバイス、ledデバイスの製造方法および積層体 |
Also Published As
Publication number | Publication date |
---|---|
KR101634406B1 (ko) | 2016-06-28 |
EP2281315A1 (de) | 2011-02-09 |
KR20110030417A (ko) | 2011-03-23 |
US20110266571A1 (en) | 2011-11-03 |
CN101971376B (zh) | 2013-01-02 |
DE102008025756B4 (de) | 2023-02-23 |
CN101971376A (zh) | 2011-02-09 |
DE102008025756A1 (de) | 2009-12-03 |
EP2281315B1 (de) | 2018-10-17 |
WO2009143795A1 (de) | 2009-12-03 |
US8461616B2 (en) | 2013-06-11 |
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