KR101602367B1 - 리소그래피 장치용 전단-층 척 - Google Patents

리소그래피 장치용 전단-층 척 Download PDF

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Publication number
KR101602367B1
KR101602367B1 KR1020107025177A KR20107025177A KR101602367B1 KR 101602367 B1 KR101602367 B1 KR 101602367B1 KR 1020107025177 A KR1020107025177 A KR 1020107025177A KR 20107025177 A KR20107025177 A KR 20107025177A KR 101602367 B1 KR101602367 B1 KR 101602367B1
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South Korea
Prior art keywords
chuck
stage
delete delete
stress
array
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KR1020107025177A
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English (en)
Korean (ko)
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KR20100133473A (ko
Inventor
사미르 에이. 나이페흐
마크 에드 윌리엄스
저스틴 매튜 베르디람
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에이에스엠엘 홀딩 엔.브이.
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/70716Stages
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/70783Handling stress or warp of chucks, masks or workpieces, e.g. to compensate for imaging errors or considerations related to warpage of masks or workpieces due to their own weight
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/707Chucks, e.g. chucking or un-chucking operations or structural details
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7614Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041Photolithographic processes
    • H10P76/2042Photolithographic processes using lasers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S414/00Material or article handling
    • Y10S414/135Associated with semiconductor wafer handling
    • Y10S414/141Associated with semiconductor wafer handling includes means for gripping wafer
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T279/00Chucks or sockets
    • Y10T279/34Accessory or component

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020107025177A 2008-04-10 2009-04-07 리소그래피 장치용 전단-층 척 Active KR101602367B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US7105908P 2008-04-10 2008-04-10
US61/071,059 2008-04-10

Publications (2)

Publication Number Publication Date
KR20100133473A KR20100133473A (ko) 2010-12-21
KR101602367B1 true KR101602367B1 (ko) 2016-03-11

Family

ID=40752516

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020107025177A Active KR101602367B1 (ko) 2008-04-10 2009-04-07 리소그래피 장치용 전단-층 척

Country Status (7)

Country Link
US (3) US20110013164A1 (https=)
JP (1) JP5372136B2 (https=)
KR (1) KR101602367B1 (https=)
CN (1) CN101990652B (https=)
NL (1) NL1036735A1 (https=)
TW (1) TWI429018B (https=)
WO (1) WO2009124732A1 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL1036735A1 (nl) 2008-04-10 2009-10-13 Asml Holding Nv Shear-layer chuck for lithographic apparatus.
WO2012110144A1 (en) * 2011-02-18 2012-08-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method.
JP5911959B2 (ja) * 2011-09-09 2016-04-27 マッパー・リソグラフィー・アイピー・ビー.ブイ. ウェーハテーブル用支持構造体
KR20170016547A (ko) 2015-08-03 2017-02-14 삼성전자주식회사 척 테이블 및 그를 포함하는 기판 제조 장치
US11040705B2 (en) 2016-05-19 2021-06-22 Pylon Manufacturing Corp. Windshield wiper connector
CN110268331B (zh) 2017-02-10 2021-12-07 Asml控股股份有限公司 掩模版夹持设备
EP3963402B1 (en) 2019-04-30 2024-12-25 ASML Netherlands B.V. Method for providing a wear-resistant material on a body, and composite body
US11650512B2 (en) * 2021-06-25 2023-05-16 Taiwan Semiconductor Manufacturing Company, Ltd. Reticle cleaning device and method of use
WO2025242380A1 (en) * 2024-05-20 2025-11-27 Asml Netherlands B.V. Split chuck
WO2026073658A1 (en) * 2024-10-01 2026-04-09 Asml Netherlands B.V. Methods and systems for determining reticle deformation

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020117792A1 (en) * 2001-02-23 2002-08-29 Leidy Robert K. Wafer chuck having a removable insert
JP2004319891A (ja) * 2003-04-18 2004-11-11 Canon Inc 露光装置
US20050200827A1 (en) 2004-03-01 2005-09-15 Canon Kabushiki Kaisha Positioning apparatus and exposure apparatus using the same

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6335989U (https=) * 1986-08-25 1988-03-08
US5401973A (en) 1992-12-04 1995-03-28 Atomic Energy Of Canada Limited Industrial material processing electron linear accelerator
WO2001060125A1 (en) * 2000-02-07 2001-08-16 Tdk Corporation Composite substrate, thin-film light-emitting device comprising the same, and method for producing the same
JP2003007602A (ja) * 2001-06-26 2003-01-10 Nikon Corp 計測装置及び計測方法、露光装置及び露光方法
JP2002050560A (ja) 2000-08-02 2002-02-15 Nikon Corp ステージ装置、計測装置及び計測方法、露光装置及び露光方法
JP2002134599A (ja) * 2000-10-24 2002-05-10 Ngk Insulators Ltd 静電吸着装置
JP2002299228A (ja) 2001-04-03 2002-10-11 Nikon Corp レチクル、それを用いた露光装置及び露光方法
JP4103385B2 (ja) * 2001-12-27 2008-06-18 住友金属工業株式会社 真空チャック
JP2003332411A (ja) * 2002-05-17 2003-11-21 Nikon Corp 基板保持装置及び露光装置
EP1434100A2 (en) * 2002-12-23 2004-06-30 ASML Netherlands B.V. Lithographic apparatus
TWI254841B (en) * 2002-12-23 2006-05-11 Asml Netherlands Bv Lithographic apparatus
AU2003292557A1 (en) 2002-12-27 2004-07-29 Matsushita Electric Works, Ltd. Field emission-type electron source and method of producing the same
JP2005039155A (ja) * 2003-07-18 2005-02-10 Matsushita Electric Ind Co Ltd 半導体装置の製造方法及びそれに用いる半導体基板の製造方法
US7119884B2 (en) * 2003-12-24 2006-10-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7786607B2 (en) 2004-02-19 2010-08-31 Asml Holding N.V. Overlay correction by reducing wafer slipping after alignment
US7824498B2 (en) * 2004-02-24 2010-11-02 Applied Materials, Inc. Coating for reducing contamination of substrates during processing
WO2006064851A1 (ja) * 2004-12-15 2006-06-22 Nikon Corporation 基板保持装置、露光装置、及びデバイス製造方法
JP4708876B2 (ja) * 2005-06-21 2011-06-22 キヤノン株式会社 液浸露光装置
US7372549B2 (en) 2005-06-24 2008-05-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7564536B2 (en) * 2005-11-08 2009-07-21 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7733463B2 (en) 2006-05-05 2010-06-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20070268476A1 (en) 2006-05-19 2007-11-22 Nikon Corporation Kinematic chucks for reticles and other planar bodies
WO2007136123A1 (en) * 2006-05-19 2007-11-29 Nikon Corporation Chucks for reticles and other planar bodies
US7722256B2 (en) * 2006-11-17 2010-05-25 Corning Incorporated Flat surface air bearing assembly
NL1036735A1 (nl) 2008-04-10 2009-10-13 Asml Holding Nv Shear-layer chuck for lithographic apparatus.

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020117792A1 (en) * 2001-02-23 2002-08-29 Leidy Robert K. Wafer chuck having a removable insert
JP2004319891A (ja) * 2003-04-18 2004-11-11 Canon Inc 露光装置
US20050200827A1 (en) 2004-03-01 2005-09-15 Canon Kabushiki Kaisha Positioning apparatus and exposure apparatus using the same

Also Published As

Publication number Publication date
US8976336B2 (en) 2015-03-10
US20110013164A1 (en) 2011-01-20
JP2011520245A (ja) 2011-07-14
US20140233009A1 (en) 2014-08-21
TW201001613A (en) 2010-01-01
KR20100133473A (ko) 2010-12-21
NL1036735A1 (nl) 2009-10-13
JP5372136B2 (ja) 2013-12-18
US8786832B2 (en) 2014-07-22
CN101990652B (zh) 2012-10-10
WO2009124732A1 (en) 2009-10-15
TWI429018B (zh) 2014-03-01
CN101990652A (zh) 2011-03-23
US20140016110A1 (en) 2014-01-16

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