KR101573667B1 - 타겟 백킹 튜브를 위한 자석 배열체, 자석 배열체를 포함하는 타겟 백킹 튜브, 원통형 타겟 조립체 및 스퍼터링 시스템 - Google Patents

타겟 백킹 튜브를 위한 자석 배열체, 자석 배열체를 포함하는 타겟 백킹 튜브, 원통형 타겟 조립체 및 스퍼터링 시스템 Download PDF

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KR101573667B1
KR101573667B1 KR1020137003864A KR20137003864A KR101573667B1 KR 101573667 B1 KR101573667 B1 KR 101573667B1 KR 1020137003864 A KR1020137003864 A KR 1020137003864A KR 20137003864 A KR20137003864 A KR 20137003864A KR 101573667 B1 KR101573667 B1 KR 101573667B1
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South Korea
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magnet
axis
magnet element
target
plane
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Korean (ko)
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KR20130038384A (ko
Inventor
안드레아스 로프
유르겐 그릴마이어
볼프강 크로크
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어플라이드 머티어리얼스, 인코포레이티드
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/342—Hollow targets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3452—Magnet distribution
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3461—Means for shaping the magnetic field, e.g. magnetic shunts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J43/00—Secondary-emission tubes; Electron-multiplier tubes

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
KR1020137003864A 2010-07-16 2011-06-22 타겟 백킹 튜브를 위한 자석 배열체, 자석 배열체를 포함하는 타겟 백킹 튜브, 원통형 타겟 조립체 및 스퍼터링 시스템 Active KR101573667B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP10169891.8 2010-07-16
EP20100169891 EP2407999B1 (en) 2010-07-16 2010-07-16 Magnet arrangement for a target backing tube, target backing tube including the same, cylindrical target assembly and sputtering system
PCT/EP2011/060517 WO2012007256A1 (en) 2010-07-16 2011-06-22 Magnet arrangement for a target backing tube, target backing tube including the same, cylindrical target assembly and sputtering system

Publications (2)

Publication Number Publication Date
KR20130038384A KR20130038384A (ko) 2013-04-17
KR101573667B1 true KR101573667B1 (ko) 2015-12-02

Family

ID=43383469

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020137003864A Active KR101573667B1 (ko) 2010-07-16 2011-06-22 타겟 백킹 튜브를 위한 자석 배열체, 자석 배열체를 포함하는 타겟 백킹 튜브, 원통형 타겟 조립체 및 스퍼터링 시스템

Country Status (7)

Country Link
US (1) US9005414B2 (https=)
EP (1) EP2407999B1 (https=)
JP (1) JP5844808B2 (https=)
KR (1) KR101573667B1 (https=)
CN (1) CN103003915B (https=)
TW (1) TWI515318B (https=)
WO (1) WO2012007256A1 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140126517A (ko) * 2013-04-23 2014-10-31 주식회사 아바코 마그넷 유닛 및 이를 구비하는 스퍼터링 장치
KR101913791B1 (ko) * 2014-07-22 2018-11-01 어플라이드 머티어리얼스, 인코포레이티드 타겟 어레인지먼트, 그를 구비한 프로세싱 장치 및 그의 제조 방법
US11008650B2 (en) 2016-11-03 2021-05-18 Starfire Industries Llc Compact system for coupling RF power directly into RF linacs
US12211679B2 (en) 2019-02-25 2025-01-28 Starfire Industries Llc Method and apparatus for metal and ceramic nanolayering for accident tolerant nuclear fuel, particle accelerators, and aerospace leading edges
US11056323B2 (en) * 2017-11-01 2021-07-06 Ulvac, Inc. Sputtering apparatus and method of forming film
JP7097172B2 (ja) * 2017-11-21 2022-07-07 キヤノントッキ株式会社 スパッタリング装置
JP6673590B2 (ja) * 2017-12-27 2020-03-25 キヤノントッキ株式会社 スパッタ成膜装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050034981A1 (en) * 2003-08-08 2005-02-17 Frank Fuchs Cathodic sputtering apparatus
US20050051424A1 (en) * 1999-02-12 2005-03-10 Jianming Fu Sputtering using an unbalanced magnetron
US20070261952A1 (en) 2004-12-17 2007-11-15 Israel Wagner Magnetron Sputtering Apparatus

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4525264A (en) * 1981-12-07 1985-06-25 Ford Motor Company Cylindrical post magnetron sputtering system
JPH04346662A (ja) * 1991-05-22 1992-12-02 Ube Ind Ltd スパッタリング方法およびその装置
EP0805880A4 (en) * 1995-01-12 1998-05-06 Boc Group Inc ROTATABLE MICROWAVE WITH CURVED OR SEGMENTED MAGNETS
US20020046945A1 (en) * 1999-10-28 2002-04-25 Applied Materials, Inc. High performance magnetron for DC sputtering systems

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050051424A1 (en) * 1999-02-12 2005-03-10 Jianming Fu Sputtering using an unbalanced magnetron
US20050034981A1 (en) * 2003-08-08 2005-02-17 Frank Fuchs Cathodic sputtering apparatus
US20070261952A1 (en) 2004-12-17 2007-11-15 Israel Wagner Magnetron Sputtering Apparatus

Also Published As

Publication number Publication date
WO2012007256A1 (en) 2012-01-19
CN103003915A (zh) 2013-03-27
JP2013534568A (ja) 2013-09-05
TW201207140A (en) 2012-02-16
EP2407999B1 (en) 2014-09-03
EP2407999A1 (en) 2012-01-18
TWI515318B (zh) 2016-01-01
US20120012458A1 (en) 2012-01-19
US9005414B2 (en) 2015-04-14
CN103003915B (zh) 2016-09-07
JP5844808B2 (ja) 2016-01-20
KR20130038384A (ko) 2013-04-17

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