CN103003915B - 靶材背管的磁铁配置、包括所述磁铁配置的靶材背管、圆柱状靶材组件及溅射系统 - Google Patents

靶材背管的磁铁配置、包括所述磁铁配置的靶材背管、圆柱状靶材组件及溅射系统 Download PDF

Info

Publication number
CN103003915B
CN103003915B CN201180034908.9A CN201180034908A CN103003915B CN 103003915 B CN103003915 B CN 103003915B CN 201180034908 A CN201180034908 A CN 201180034908A CN 103003915 B CN103003915 B CN 103003915B
Authority
CN
China
Prior art keywords
magnet
axis
target
plane
magnet element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201180034908.9A
Other languages
English (en)
Chinese (zh)
Other versions
CN103003915A (zh
Inventor
A·洛珀
J·格里尔梅耶
W·克罗克
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of CN103003915A publication Critical patent/CN103003915A/zh
Application granted granted Critical
Publication of CN103003915B publication Critical patent/CN103003915B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/342—Hollow targets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3452—Magnet distribution
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3461—Means for shaping the magnetic field, e.g. magnetic shunts

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
CN201180034908.9A 2010-07-16 2011-06-22 靶材背管的磁铁配置、包括所述磁铁配置的靶材背管、圆柱状靶材组件及溅射系统 Active CN103003915B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP10169891.8 2010-07-16
EP20100169891 EP2407999B1 (en) 2010-07-16 2010-07-16 Magnet arrangement for a target backing tube, target backing tube including the same, cylindrical target assembly and sputtering system
PCT/EP2011/060517 WO2012007256A1 (en) 2010-07-16 2011-06-22 Magnet arrangement for a target backing tube, target backing tube including the same, cylindrical target assembly and sputtering system

Publications (2)

Publication Number Publication Date
CN103003915A CN103003915A (zh) 2013-03-27
CN103003915B true CN103003915B (zh) 2016-09-07

Family

ID=43383469

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201180034908.9A Active CN103003915B (zh) 2010-07-16 2011-06-22 靶材背管的磁铁配置、包括所述磁铁配置的靶材背管、圆柱状靶材组件及溅射系统

Country Status (7)

Country Link
US (1) US9005414B2 (https=)
EP (1) EP2407999B1 (https=)
JP (1) JP5844808B2 (https=)
KR (1) KR101573667B1 (https=)
CN (1) CN103003915B (https=)
TW (1) TWI515318B (https=)
WO (1) WO2012007256A1 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140126517A (ko) * 2013-04-23 2014-10-31 주식회사 아바코 마그넷 유닛 및 이를 구비하는 스퍼터링 장치
KR101913791B1 (ko) * 2014-07-22 2018-11-01 어플라이드 머티어리얼스, 인코포레이티드 타겟 어레인지먼트, 그를 구비한 프로세싱 장치 및 그의 제조 방법
US11008650B2 (en) 2016-11-03 2021-05-18 Starfire Industries Llc Compact system for coupling RF power directly into RF linacs
US12211679B2 (en) 2019-02-25 2025-01-28 Starfire Industries Llc Method and apparatus for metal and ceramic nanolayering for accident tolerant nuclear fuel, particle accelerators, and aerospace leading edges
US11056323B2 (en) * 2017-11-01 2021-07-06 Ulvac, Inc. Sputtering apparatus and method of forming film
JP7097172B2 (ja) * 2017-11-21 2022-07-07 キヤノントッキ株式会社 スパッタリング装置
JP6673590B2 (ja) * 2017-12-27 2020-03-25 キヤノントッキ株式会社 スパッタ成膜装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1580319A (zh) * 2003-08-08 2005-02-16 应用菲林股份有限两合公司 阴极溅射设备

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4525264A (en) * 1981-12-07 1985-06-25 Ford Motor Company Cylindrical post magnetron sputtering system
JPH04346662A (ja) * 1991-05-22 1992-12-02 Ube Ind Ltd スパッタリング方法およびその装置
EP0805880A4 (en) * 1995-01-12 1998-05-06 Boc Group Inc ROTATABLE MICROWAVE WITH CURVED OR SEGMENTED MAGNETS
US6306265B1 (en) * 1999-02-12 2001-10-23 Applied Materials, Inc. High-density plasma for ionized metal deposition capable of exciting a plasma wave
US20020046945A1 (en) * 1999-10-28 2002-04-25 Applied Materials, Inc. High performance magnetron for DC sputtering systems
EP1825494A1 (en) * 2004-12-17 2007-08-29 Unaxis Balzers Aktiengesellschaft Magnetron sputtering apparatus

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1580319A (zh) * 2003-08-08 2005-02-16 应用菲林股份有限两合公司 阴极溅射设备

Also Published As

Publication number Publication date
WO2012007256A1 (en) 2012-01-19
CN103003915A (zh) 2013-03-27
JP2013534568A (ja) 2013-09-05
TW201207140A (en) 2012-02-16
EP2407999B1 (en) 2014-09-03
KR101573667B1 (ko) 2015-12-02
EP2407999A1 (en) 2012-01-18
TWI515318B (zh) 2016-01-01
US20120012458A1 (en) 2012-01-19
US9005414B2 (en) 2015-04-14
JP5844808B2 (ja) 2016-01-20
KR20130038384A (ko) 2013-04-17

Similar Documents

Publication Publication Date Title
CN103003915B (zh) 靶材背管的磁铁配置、包括所述磁铁配置的靶材背管、圆柱状靶材组件及溅射系统
EP2855729B1 (en) Method for coating a substrate and coater
JP6385487B2 (ja) 基板をコーティングするための方法およびコータ
JP6118267B2 (ja) スパッタリング装置
WO2018068833A1 (en) Magnet arrangement for a sputter deposition source and magnetron sputter deposition source
EP2306490A1 (en) Magnet arrangement for a target backing tube and target backing tube comprising the same
JP2015530482A (ja) スパッタリング装置
EP2325350A1 (en) Anode rod for a sputtering system

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant