KR101573095B1 - 광전 소자 및 그 제조 방법 - Google Patents

광전 소자 및 그 제조 방법 Download PDF

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KR101573095B1
KR101573095B1 KR1020107019150A KR20107019150A KR101573095B1 KR 101573095 B1 KR101573095 B1 KR 101573095B1 KR 1020107019150 A KR1020107019150 A KR 1020107019150A KR 20107019150 A KR20107019150 A KR 20107019150A KR 101573095 B1 KR101573095 B1 KR 101573095B1
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semiconductor layer
layer stack
radiation
stack
layer
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KR20100109562A (ko
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니콜라우스 그메인위에서
베르톨드 한
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오스람 옵토 세미컨덕터스 게엠베하
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials

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  • Led Devices (AREA)
  • Led Device Packages (AREA)
KR1020107019150A 2008-01-31 2009-01-19 광전 소자 및 그 제조 방법 Active KR101573095B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102008006988A DE102008006988A1 (de) 2008-01-31 2008-01-31 Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
DE102008006988.4 2008-01-31

Related Child Applications (1)

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KR1020157032941A Division KR101640360B1 (ko) 2008-01-31 2009-01-19 광전 소자 및 그 제조 방법

Publications (2)

Publication Number Publication Date
KR20100109562A KR20100109562A (ko) 2010-10-08
KR101573095B1 true KR101573095B1 (ko) 2015-11-30

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KR1020107019150A Active KR101573095B1 (ko) 2008-01-31 2009-01-19 광전 소자 및 그 제조 방법
KR1020157032941A Active KR101640360B1 (ko) 2008-01-31 2009-01-19 광전 소자 및 그 제조 방법

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Country Status (8)

Country Link
US (1) US8686451B2 (enExample)
EP (2) EP2235759B9 (enExample)
JP (1) JP5264935B2 (enExample)
KR (2) KR101573095B1 (enExample)
CN (1) CN101933171B (enExample)
DE (1) DE102008006988A1 (enExample)
TW (1) TWI399867B (enExample)
WO (1) WO2009094980A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5755511B2 (ja) * 2011-06-14 2015-07-29 Ｄｏｗａエレクトロニクス株式会社 半導体発光素子およびその製造方法
US9508891B2 (en) 2014-11-21 2016-11-29 Epistar Corporation Method for making light-emitting device
DE102015107577B4 (de) * 2015-05-13 2026-08-06 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip
DE102016113002B4 (de) 2016-07-14 2022-09-29 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Bauelemente mit verbesserter Effizienz und Verfahren zur Herstellung von Bauelementen
US10862006B2 (en) * 2018-08-17 2020-12-08 Seoul Viosys Co., Ltd. Light emitting device
US11637219B2 (en) 2019-04-12 2023-04-25 Google Llc Monolithic integration of different light emitting structures on a same substrate

Family Cites Families (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL9100103A (nl) 1991-01-23 1992-08-17 Philips Nv Halfgeleiderdiodelaser met monitordiode.
BE1007282A3 (nl) 1993-07-12 1995-05-09 Philips Electronics Nv Opto-electronische halfgeleiderinrichting met een array van halfgeleiderdiodelasers en werkwijze ter vervaardiging daarvan.
US5838029A (en) 1994-08-22 1998-11-17 Rohm Co., Ltd. GaN-type light emitting device formed on a silicon substrate
US5917202A (en) * 1995-12-21 1999-06-29 Hewlett-Packard Company Highly reflective contacts for light emitting semiconductor devices
DE19638667C2 (de) 1996-09-20 2001-05-17 Osram Opto Semiconductors Gmbh Mischfarbiges Licht abstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement
DE19625622A1 (de) * 1996-06-26 1998-01-02 Siemens Ag Lichtabstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement
US6487230B1 (en) * 1998-04-14 2002-11-26 Bandwidth 9, Inc Vertical cavity apparatus with tunnel junction
US5991326A (en) * 1998-04-14 1999-11-23 Bandwidth9, Inc. Lattice-relaxed verticle optical cavities
DE19819543A1 (de) * 1998-04-30 1999-11-11 Siemens Ag Lichtemissions-Halbleitereinrichtung
US6320206B1 (en) * 1999-02-05 2001-11-20 Lumileds Lighting, U.S., Llc Light emitting devices having wafer bonded aluminum gallium indium nitride structures and mirror stacks
JP4496596B2 (ja) * 2000-03-27 2010-07-07 ソニー株式会社 発光装置
US20020017652A1 (en) 2000-08-08 2002-02-14 Stefan Illek Semiconductor chip for optoelectronics
JP2003163373A (ja) 2001-11-26 2003-06-06 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子
JP2003279955A (ja) 2002-03-18 2003-10-02 Giantplus Technology Co Ltd 半透過式カラー液晶ディスプレイ
TW586240B (en) 2002-12-31 2004-05-01 Univ Nat Taiwan Photonic transmitter
TW591811B (en) * 2003-01-02 2004-06-11 Epitech Technology Corp Ltd Color mixing light emitting diode
JP2003332619A (ja) * 2003-06-09 2003-11-21 Toyoda Gosei Co Ltd 半導体発光素子
DE10354936B4 (de) * 2003-09-30 2012-02-16 Osram Opto Semiconductors Gmbh Strahlungemittierendes Halbleiterbauelement
CN1839524A (zh) * 2003-12-05 2006-09-27 日本先锋公司 半导体激光装置的制造方法
TWI233218B (en) * 2004-01-08 2005-05-21 Pamelan Company Ltd One dimensional photonic crystal and light emitting device made from the same
DE102004004765A1 (de) * 2004-01-29 2005-09-01 Rwe Space Solar Power Gmbh Aktive Zonen aufweisende Halbleiterstruktur
EP1716597B1 (de) 2004-02-20 2018-04-04 OSRAM Opto Semiconductors GmbH Optoelektronisches bauelement, vorrichtung mit einer mehrzahl optoelektronischer bauelemente und verfahren zur herstellung eines optoelektronischen bauelements
JP2005276899A (ja) 2004-03-23 2005-10-06 Shin Etsu Handotai Co Ltd 発光素子
TWI243489B (en) * 2004-04-14 2005-11-11 Genesis Photonics Inc Single chip light emitting diode with red, blue and green three wavelength light emitting spectra
DE102004025684B4 (de) 2004-04-29 2024-08-22 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zum Ausbilden einer Kontaktstruktur zur elektrischen Kontaktierung eines optoelektronischen Halbleiterchips
US7332365B2 (en) * 2004-05-18 2008-02-19 Cree, Inc. Method for fabricating group-III nitride devices and devices fabricated using method
DE102004026125A1 (de) 2004-05-28 2005-12-22 Osram Opto Semiconductors Gmbh Optoelektronisches Bauteil und Verfahren zu dessen Herstellung
JP2006032315A (ja) * 2004-06-14 2006-02-02 Seiko Epson Corp 発光装置、電子機器、投射型表示装置、ラインヘッドおよび画像形成装置
US7402831B2 (en) 2004-12-09 2008-07-22 3M Innovative Properties Company Adapting short-wavelength LED's for polychromatic, broadband, or “white” emission
US7521856B2 (en) * 2005-01-26 2009-04-21 Osram Opto Semiconductors Gmbh OLED device
JP4653671B2 (ja) 2005-03-14 2011-03-16 株式会社東芝 発光装置
JP4353125B2 (ja) * 2005-04-06 2009-10-28 住友電気工業株式会社 発光素子およびその製造方法
JP2007158133A (ja) * 2005-12-06 2007-06-21 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体素子の製造方法
JP2007273975A (ja) * 2006-03-10 2007-10-18 Matsushita Electric Works Ltd 発光素子
US20070284565A1 (en) * 2006-06-12 2007-12-13 3M Innovative Properties Company Led device with re-emitting semiconductor construction and optical element
JP2008001540A (ja) * 2006-06-21 2008-01-10 Mitsubishi Cable Ind Ltd 窒化物半導体結晶の製造方法
JP2008005140A (ja) 2006-06-21 2008-01-10 Kyocera Mita Corp 画像読取装置及びこれを備える画像形成装置
US8163581B1 (en) * 2010-10-13 2012-04-24 Monolith IC 3D Semiconductor and optoelectronic devices

Also Published As

Publication number Publication date
CN101933171B (zh) 2013-10-30
US20110175121A1 (en) 2011-07-21
EP2235759A1 (de) 2010-10-06
EP2235759B1 (de) 2018-05-16
TWI399867B (zh) 2013-06-21
KR101640360B1 (ko) 2016-07-15
JP5264935B2 (ja) 2013-08-14
TW200947762A (en) 2009-11-16
WO2009094980A1 (de) 2009-08-06
KR20150136545A (ko) 2015-12-07
KR20100109562A (ko) 2010-10-08
DE102008006988A1 (de) 2009-08-06
CN101933171A (zh) 2010-12-29
EP2235759B9 (de) 2018-09-19
US8686451B2 (en) 2014-04-01
EP3327796A1 (de) 2018-05-30
EP3327796B1 (de) 2023-03-29
JP2011511446A (ja) 2011-04-07

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