KR101559601B1 - 복사 방출 장치 - Google Patents

복사 방출 장치 Download PDF

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Publication number
KR101559601B1
KR101559601B1 KR1020107015623A KR20107015623A KR101559601B1 KR 101559601 B1 KR101559601 B1 KR 101559601B1 KR 1020107015623 A KR1020107015623 A KR 1020107015623A KR 20107015623 A KR20107015623 A KR 20107015623A KR 101559601 B1 KR101559601 B1 KR 101559601B1
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KR
South Korea
Prior art keywords
active semiconductor
semiconductor layer
layer
radiation
emitting device
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Expired - Fee Related
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KR1020107015623A
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English (en)
Korean (ko)
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KR20100097214A (ko
Inventor
시에그프리드 헤르만
Original Assignee
오스람 옵토 세미컨덕터스 게엠베하
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Publication of KR20100097214A publication Critical patent/KR20100097214A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0756—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Led Devices (AREA)
  • Led Device Packages (AREA)
KR1020107015623A 2007-12-14 2008-12-03 복사 방출 장치 Expired - Fee Related KR101559601B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE102007060257 2007-12-14
DE102007060257.1 2007-12-14
DE102008013030A DE102008013030A1 (de) 2007-12-14 2008-03-07 Strahlungsemittierende Vorrichtung
DE102008013030.3 2008-03-07

Publications (2)

Publication Number Publication Date
KR20100097214A KR20100097214A (ko) 2010-09-02
KR101559601B1 true KR101559601B1 (ko) 2015-10-12

Family

ID=40690046

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020107015623A Expired - Fee Related KR101559601B1 (ko) 2007-12-14 2008-12-03 복사 방출 장치

Country Status (8)

Country Link
US (1) US8648357B2 (enExample)
EP (1) EP2220693B1 (enExample)
JP (1) JP5611052B2 (enExample)
KR (1) KR101559601B1 (enExample)
CN (1) CN101897042B (enExample)
DE (1) DE102008013030A1 (enExample)
TW (1) TWI423420B (enExample)
WO (1) WO2009076933A1 (enExample)

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* Cited by examiner, † Cited by third party
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DE102008025160A1 (de) 2008-05-26 2009-12-03 Osram Opto Semiconductors Gmbh Projektor für kleinste Projektionsflächen und Verwendung einer Mehrfarben-LED in einem Projektor
DE102008030815A1 (de) 2008-06-30 2009-12-31 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Vielzahl von optoelektronischen Bauelementen
DE102008046762B4 (de) 2008-09-11 2020-12-24 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung LED-Projektor
DE102008049535A1 (de) * 2008-09-29 2010-04-08 Osram Opto Semiconductors Gmbh LED-Modul und Herstellungsverfahren
KR101163838B1 (ko) 2009-10-19 2012-07-09 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
JP2013546161A (ja) 2010-09-21 2013-12-26 クワンタム エレクトロ オプト システムズ エスディーエヌ． ビーエイチディー． 発光およびレーザ半導体方法およびデバイス
DE102013104954A1 (de) * 2013-05-14 2014-11-20 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zu seiner Herstellung
US8860005B1 (en) 2013-08-08 2014-10-14 International Business Machines Corporation Thin light emitting diode and fabrication method
CN104143598A (zh) * 2014-07-22 2014-11-12 李媛 一种无衬底led芯片的电极结构
US9865769B2 (en) 2015-03-23 2018-01-09 International Business Machines Corporation Back contact LED through spalling
US11637219B2 (en) 2019-04-12 2023-04-25 Google Llc Monolithic integration of different light emitting structures on a same substrate

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005216917A (ja) 2004-01-27 2005-08-11 Seiko Epson Corp 光源装置及びプロジェクタ
US20070153867A1 (en) 2005-12-05 2007-07-05 Osram Opto Semiconductors Gmbh Semiconductor component and laser device
WO2007076796A1 (de) 2005-12-30 2007-07-12 Osram Opto Semiconductors Gmbh Led-halbleiterkörper und verwendung eines led-halbleiterkörpers

Family Cites Families (18)

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Publication number Priority date Publication date Assignee Title
JPS5375882A (en) 1976-12-17 1978-07-05 Seiko Instr & Electronics Ltd Light emitting display device
JP3195720B2 (ja) 1994-12-20 2001-08-06 シャープ株式会社 多色ｌｅｄ素子およびその多色ｌｅｄ素子を用いたｌｅｄ表示装置、並びに多色ｌｅｄ素子の製造方法
EP0811251A2 (en) 1995-12-21 1997-12-10 Koninklijke Philips Electronics N.V. MULTICOLOR LIGHT EMITTING DIODE, METHODS FOR PRODUCING SAME AND MULTICOLOR DISPLAY INCORPORATING AN ARRAY OF SUCH LEDs
JP2001077474A (ja) 1999-07-07 2001-03-23 Fuji Xerox Co Ltd 発光素子
DE102004004765A1 (de) 2004-01-29 2005-09-01 Rwe Space Solar Power Gmbh Aktive Zonen aufweisende Halbleiterstruktur
US8835937B2 (en) 2004-02-20 2014-09-16 Osram Opto Semiconductors Gmbh Optoelectronic component, device comprising a plurality of optoelectronic components, and method for the production of an optoelectronic component
US7271420B2 (en) 2004-07-07 2007-09-18 Cao Group, Inc. Monolitholic LED chip to emit multiple colors
DE102004042187B4 (de) * 2004-08-31 2021-09-09 Infineon Technologies Ag Chipkartenmodul für eine kontaklose Chipkarte mit Sicherheitsmarkierung
DE102007004303A1 (de) 2006-08-04 2008-02-07 Osram Opto Semiconductors Gmbh Dünnfilm-Halbleiterbauelement und Bauelement-Verbund
DE102007004304A1 (de) 2007-01-29 2008-07-31 Osram Opto Semiconductors Gmbh Dünnfilm-Leuchtdioden-Chip und Verfahren zur Herstellung eines Dünnfilm-Leuchtdioden-Chips
EP1953837A3 (de) 2007-01-31 2014-01-15 OSRAM Opto Semiconductors GmbH Halbleiterbauelement mit einer optisch aktiven Schicht, Anordnung mit einer Vielzahl von optisch aktiven Schichten und Verfahren zur Herstellung eines Halbleiterbauelements
DE102007017113A1 (de) 2007-01-31 2008-08-07 Osram Opto Semiconductors Gmbh Halbleiterbauelement mit einer optisch aktiven Schicht, Anordnung mit einer Vielzahl von optisch aktiven Schichten und Verfahren zur Herstellung eines Halbleiterbauelements
DE102007054039A1 (de) 2007-09-12 2009-03-19 Osram Opto Semiconductors Gmbh Leuchtdiode und Verfahren zur Einstellung des Farbortes bei einer Leuchtdiode
DE102008012844A1 (de) 2007-11-30 2009-06-04 Osram Opto Semiconductors Gmbh Beleuchtungseinrichtung sowie Verfahren zur Herstellung einer Beleuchtungseinrichtung
DE102008013898A1 (de) 2007-12-14 2009-06-25 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement, Anordnung und Verfahren zur Herstellung eines optoelektronischen Bauelements
DE102008008599A1 (de) 2007-12-20 2009-06-25 Osram Opto Semiconductors Gmbh Halbleiteranordnung, insbesondere Leuchtdiodenanordnung und Leuchtmittelanordnung
DE102007062042A1 (de) 2007-12-21 2009-06-25 Osram Opto Semiconductors Gmbh Optoelektronisches Bauteil, Verkapselung für ein optoelektronisches Bauteil und Herstellungsverfahren
DE102008019612A1 (de) 2008-04-18 2009-10-22 Osram Opto Semiconductors Gmbh Optoelektronisches Bauteil

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005216917A (ja) 2004-01-27 2005-08-11 Seiko Epson Corp 光源装置及びプロジェクタ
US20070153867A1 (en) 2005-12-05 2007-07-05 Osram Opto Semiconductors Gmbh Semiconductor component and laser device
WO2007076796A1 (de) 2005-12-30 2007-07-12 Osram Opto Semiconductors Gmbh Led-halbleiterkörper und verwendung eines led-halbleiterkörpers

Also Published As

Publication number Publication date
CN101897042A (zh) 2010-11-24
TWI423420B (zh) 2014-01-11
CN101897042B (zh) 2013-03-27
TW200937610A (en) 2009-09-01
JP2011507239A (ja) 2011-03-03
KR20100097214A (ko) 2010-09-02
WO2009076933A1 (de) 2009-06-25
US20100264843A1 (en) 2010-10-21
EP2220693A1 (de) 2010-08-25
JP5611052B2 (ja) 2014-10-22
DE102008013030A1 (de) 2009-06-25
US8648357B2 (en) 2014-02-11
EP2220693B1 (de) 2017-02-08

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