KR101546129B1 - 파워 사이클 시험 장치 및 파워 사이클 시험 방법 - Google Patents

파워 사이클 시험 장치 및 파워 사이클 시험 방법 Download PDF

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KR101546129B1
KR101546129B1 KR1020130079729A KR20130079729A KR101546129B1 KR 101546129 B1 KR101546129 B1 KR 101546129B1 KR 1020130079729 A KR1020130079729 A KR 1020130079729A KR 20130079729 A KR20130079729 A KR 20130079729A KR 101546129 B1 KR101546129 B1 KR 101546129B1
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test
power
cycle test
temperature
cycle
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KR20140011470A (ko
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가츠마사 스야마
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에스펙 가부시키가이샤
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2608—Circuits therefor for testing bipolar transistors
    • G01R31/2619—Circuits therefor for testing bipolar transistors for measuring thermal properties thereof
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2642—Testing semiconductor operation lifetime or reliability, e.g. by accelerated life tests

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
KR1020130079729A 2012-07-18 2013-07-08 파워 사이클 시험 장치 및 파워 사이클 시험 방법 Active KR101546129B1 (ko)

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JPJP-P-2012-159274 2012-07-18
JP2012159274A JP5731448B2 (ja) 2012-07-18 2012-07-18 パワーサイクル試験装置

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KR20140011470A KR20140011470A (ko) 2014-01-28
KR101546129B1 true KR101546129B1 (ko) 2015-08-20

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US (1) US9435850B2 (enExample)
JP (1) JP5731448B2 (enExample)
KR (1) KR101546129B1 (enExample)

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CN104569774A (zh) * 2014-05-08 2015-04-29 江苏中科君芯科技有限公司 一种检测igbt功率器件可靠性的系统和方法
JP6275629B2 (ja) * 2014-12-08 2018-02-07 エスペック株式会社 パワーサイクル試験装置およびパワーサイクル試験方法
JP6275631B2 (ja) * 2014-12-12 2018-02-07 エスペック株式会社 パワーサイクル試験装置およびパワーサイクル試験方法
JP6607724B2 (ja) * 2015-07-29 2019-11-20 新電元工業株式会社 半導体試験装置及び半導体試験方法
CN106610445B (zh) * 2015-10-27 2019-07-12 全球能源互联网研究院 一种数字化驱动的igbt电流检测系统及其检测方法
EP3239726A1 (en) * 2016-04-28 2017-11-01 Vincotech GmbH Testing method with active heating and testing system
DE102016207381A1 (de) 2016-04-29 2017-11-02 Robert Bosch Gmbh Schaltelement mit einer Temperaturüberwachung und Verfahren zur Temperaturüberwachung
CN108226733B (zh) * 2016-12-09 2021-01-15 全球能源互联网研究院有限公司 一种用于igbt模块的混合功率循环检测装置及其检测方法
FR3066605B1 (fr) * 2017-05-22 2019-07-12 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede applique a un module de puissance d'un onduleur photovoltaique pour obtenir un vieillissement accelere
CN108387831B (zh) * 2018-06-04 2024-01-26 华北电力大学 一种3000a半导体器件的功率循环试验系统
CN108387774B (zh) * 2018-06-04 2023-12-08 华北电力大学 一种基于750a半导体器件的功率循环试验系统
CN108646163B (zh) * 2018-06-22 2019-08-06 华北电力大学 一种半导体器件的功率循环测试系统
CN111239576B (zh) * 2018-11-29 2021-08-10 株洲中车时代半导体有限公司 基于功率损耗线性控制的恒定功率循环测试电路及方法
CN111856229B (zh) * 2019-04-12 2023-08-15 华北电力大学 一种压接式绝缘栅双极型晶体管高温反偏试验方法
JP7625238B2 (ja) * 2019-06-14 2025-02-03 株式会社クオルテック パワーサイクル試験装置
JP7343180B2 (ja) * 2019-08-07 2023-09-12 株式会社クオルテック 電気素子試験装置
JP7506922B2 (ja) * 2019-12-18 2024-06-27 株式会社クオルテック パワーサイクル試験装置
JP7223718B2 (ja) * 2020-02-07 2023-02-16 エスペック株式会社 パワーサイクル試験装置及びパワーサイクル試験方法
CN112098789B (zh) * 2020-08-04 2023-06-13 株洲中车时代半导体有限公司 Igbt模块寿命的统计方法、装置、电子设备及存储介质
CN112433138B (zh) * 2020-11-09 2025-02-11 桂林电子科技大学 一种由功率循环生热的igbt模块温度和应力测试装置及方法
JP7490613B2 (ja) * 2021-05-13 2024-05-27 エスペック株式会社 環境形成装置、プログラム、及び送風ファンの制御方法
CN114152863B (zh) * 2021-11-27 2023-12-08 北京工业大学 一种智能可控温的GaN功率循环实验装置
CN116087736B (zh) * 2023-03-02 2025-10-10 中国科学院电工研究所 一种碳化硅器件功率循环测试电路及控制方法
CN117195665B (zh) * 2023-11-07 2024-01-26 湖南大学 一种功率半导体器件键合线的寿命预测模型构建方法
CN119178990B (zh) * 2024-11-25 2025-04-11 北京怀柔实验室 芯片的检测装置与检测方法
CN119178981A (zh) * 2024-11-25 2024-12-24 北京怀柔实验室 功率器件的功率循环测试方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000074982A (ja) 1998-09-01 2000-03-14 Honda Motor Co Ltd 電力用半導体の熱ストレス試験装置
JP2003130920A (ja) * 2001-10-29 2003-05-08 Fujitsu Ten Ltd パワーモジュールの繰返し耐久試験方法および試験装置
JP2010245348A (ja) 2009-04-07 2010-10-28 Harison Toshiba Lighting Corp 試験装置及び試験方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE504398C2 (sv) * 1994-05-24 1997-02-03 Asea Brown Boveri Anordning och förfarande för styrning av en anläggning för överföring av högspänd likström
JPH11148961A (ja) * 1997-09-11 1999-06-02 Fuji Electric Co Ltd パワー半導体モジュールの試験用温度測定装置
US8120356B2 (en) 2009-06-11 2012-02-21 International Business Machines Corporation Measurement methodology and array structure for statistical stress and test of reliabilty structures

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000074982A (ja) 1998-09-01 2000-03-14 Honda Motor Co Ltd 電力用半導体の熱ストレス試験装置
JP2003130920A (ja) * 2001-10-29 2003-05-08 Fujitsu Ten Ltd パワーモジュールの繰返し耐久試験方法および試験装置
JP2010245348A (ja) 2009-04-07 2010-10-28 Harison Toshiba Lighting Corp 試験装置及び試験方法

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Publication number Publication date
KR20140011470A (ko) 2014-01-28
US20140021974A1 (en) 2014-01-23
US9435850B2 (en) 2016-09-06
JP2014020893A (ja) 2014-02-03
JP5731448B2 (ja) 2015-06-10

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