KR101504085B1 - 비접촉 프로세스 키트 - Google Patents

비접촉 프로세스 키트 Download PDF

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Publication number
KR101504085B1
KR101504085B1 KR1020097014871A KR20097014871A KR101504085B1 KR 101504085 B1 KR101504085 B1 KR 101504085B1 KR 1020097014871 A KR1020097014871 A KR 1020097014871A KR 20097014871 A KR20097014871 A KR 20097014871A KR 101504085 B1 KR101504085 B1 KR 101504085B1
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KR
South Korea
Prior art keywords
ring
process kit
wall
deposition
shield
Prior art date
Application number
KR1020097014871A
Other languages
English (en)
Korean (ko)
Other versions
KR20090094144A (ko
Inventor
칼 브라운
푸닛 바자즈
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Publication of KR20090094144A publication Critical patent/KR20090094144A/ko
Application granted granted Critical
Publication of KR101504085B1 publication Critical patent/KR101504085B1/ko

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
KR1020097014871A 2006-12-19 2007-12-13 비접촉 프로세스 키트 KR101504085B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US87075206P 2006-12-19 2006-12-19
US60/870,752 2006-12-19
PCT/US2007/087466 WO2008079722A2 (en) 2006-12-19 2007-12-13 Non-contact process kit

Publications (2)

Publication Number Publication Date
KR20090094144A KR20090094144A (ko) 2009-09-03
KR101504085B1 true KR101504085B1 (ko) 2015-03-19

Family

ID=39563165

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020097014871A KR101504085B1 (ko) 2006-12-19 2007-12-13 비접촉 프로세스 키트

Country Status (5)

Country Link
JP (1) JP5666133B2 (zh)
KR (1) KR101504085B1 (zh)
CN (1) CN101563560B (zh)
SG (1) SG177902A1 (zh)
WO (1) WO2008079722A2 (zh)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8617672B2 (en) 2005-07-13 2013-12-31 Applied Materials, Inc. Localized surface annealing of components for substrate processing chambers
US9127362B2 (en) 2005-10-31 2015-09-08 Applied Materials, Inc. Process kit and target for substrate processing chamber
US7942969B2 (en) 2007-05-30 2011-05-17 Applied Materials, Inc. Substrate cleaning chamber and components
JP5194315B2 (ja) * 2008-07-04 2013-05-08 株式会社昭和真空 スパッタリング装置
US8900471B2 (en) 2009-02-27 2014-12-02 Applied Materials, Inc. In situ plasma clean for removal of residue from pedestal surface without breaking vacuum
WO2011117916A1 (ja) * 2010-03-24 2011-09-29 キヤノンアネルバ株式会社 電子デバイスの製造方法およびスパッタリング方法
CN103069542A (zh) * 2010-08-20 2013-04-24 应用材料公司 延长寿命的沉积环
CN103140913B (zh) * 2010-10-29 2016-09-28 应用材料公司 用于物理气相沉积腔室的沉积环及静电夹盘
CN102676997A (zh) * 2012-06-11 2012-09-19 上海宏力半导体制造有限公司 一种物理气相沉积设备
GB2522600B (en) * 2013-02-28 2018-07-11 Canon Anelva Corp Sputtering Apparatus
CN104746019B (zh) * 2013-12-26 2018-01-19 北京北方华创微电子装备有限公司 反应腔室及等离子体加工设备
CN105097604B (zh) * 2014-05-05 2018-11-06 北京北方华创微电子装备有限公司 工艺腔室
JP6357252B2 (ja) * 2014-06-13 2018-07-11 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 均一性の改善及びエッジの長寿命化のための平坦なエッジの設計
US10115573B2 (en) * 2014-10-14 2018-10-30 Applied Materials, Inc. Apparatus for high compressive stress film deposition to improve kit life
US10546733B2 (en) * 2014-12-31 2020-01-28 Applied Materials, Inc. One-piece process kit shield
CN107258012B (zh) * 2015-03-20 2021-04-16 应用材料公司 以高温聚合物接合剂接合至金属基底的陶瓷静电夹盘
TWM534436U (en) * 2015-07-03 2016-12-21 Applied Materials Inc Frame, multi-piece under substrate cover frame and processing chamber
US9909206B2 (en) * 2015-07-03 2018-03-06 Applied Materials, Inc. Process kit having tall deposition ring and deposition ring clamp
US10103012B2 (en) * 2015-09-11 2018-10-16 Applied Materials, Inc. One-piece process kit shield for reducing the impact of an electric field near the substrate
JP7225599B2 (ja) * 2018-08-10 2023-02-21 東京エレクトロン株式会社 成膜装置
US11961723B2 (en) 2018-12-17 2024-04-16 Applied Materials, Inc. Process kit having tall deposition ring for PVD chamber
CN110670049A (zh) * 2019-11-19 2020-01-10 武汉新芯集成电路制造有限公司 一种气相沉积方法及装置
TW202129045A (zh) * 2019-12-05 2021-08-01 美商應用材料股份有限公司 多陰極沉積系統與方法
CN111471976A (zh) * 2020-05-21 2020-07-31 中国科学院半导体研究所 衬底托
CN114717514B (zh) * 2021-01-06 2023-12-15 鑫天虹(厦门)科技有限公司 薄膜沉积设备
US20240186176A1 (en) * 2022-12-02 2024-06-06 Onto Innovation Inc. Stage actuator particle shield

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6051122A (en) * 1997-08-21 2000-04-18 Applied Materials, Inc. Deposition shield assembly for a semiconductor wafer processing system
US20030049372A1 (en) 1997-08-11 2003-03-13 Cook Robert C. High rate deposition at low pressures in a small batch reactor
US20060090706A1 (en) 2004-11-03 2006-05-04 Applied Materials, Inc. Support ring assembly

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6174377B1 (en) * 1997-03-03 2001-01-16 Genus, Inc. Processing chamber for atomic layer deposition processes
JPH11229132A (ja) * 1998-02-19 1999-08-24 Toshiba Corp スパッタ成膜装置およびスパッタ成膜方法
CN1172022C (zh) * 2001-10-11 2004-10-20 矽统科技股份有限公司 沉积过程的工作平台
JP2005517809A (ja) * 2002-02-14 2005-06-16 トリコン テクノロジーズ リミテッド プラズマ処理装置
US7579067B2 (en) * 2004-11-24 2009-08-25 Applied Materials, Inc. Process chamber component with layered coating and method

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030049372A1 (en) 1997-08-11 2003-03-13 Cook Robert C. High rate deposition at low pressures in a small batch reactor
US6051122A (en) * 1997-08-21 2000-04-18 Applied Materials, Inc. Deposition shield assembly for a semiconductor wafer processing system
US20060090706A1 (en) 2004-11-03 2006-05-04 Applied Materials, Inc. Support ring assembly
KR20060052443A (ko) * 2004-11-03 2006-05-19 어플라이드 머티어리얼스, 인코포레이티드 지지 링 조립체

Also Published As

Publication number Publication date
WO2008079722A2 (en) 2008-07-03
CN101563560A (zh) 2009-10-21
SG177902A1 (en) 2012-02-28
CN101563560B (zh) 2012-07-18
KR20090094144A (ko) 2009-09-03
WO2008079722A3 (en) 2009-04-16
JP2010513722A (ja) 2010-04-30
JP5666133B2 (ja) 2015-02-12

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