KR101504085B1 - non-contact process kit - Google Patents

Abstract

Along with a physical vapor deposition chamber having a non-contact process kit, a process kit for use in a physical vapor deposition (PVD) chamber is provided. In one embodiment, the process kit includes a generally cylindrical shield, the shield comprising a substantially flat cylindrical body, at least one elongated cylindrical ring extending downwardly from the body, and a mounting portion extending upwardly from an upper surface of the body, . In another embodiment, the process kit includes a generally cylindrical deposition ring. The deposition ring includes a substantially flat cylindrical body, an u-channel extending into at least one lower portion coupled to an outer portion of the body, an inner wall extending upwardly from an upper surface of the inner region of the body, And includes a substrate support shelf inside.

Description

[0001] NON-CONTACT PROCESS KIT [0002]

Embodiments of the present invention generally relate to semiconductor processing chambers having process kits and process kits for semiconductor processing chambers. More particularly, the present invention relates to a process kit comprising a shield and a ring suitable for use in a physical vapor deposition chamber.

Physical vapor deposition (PVD) or sputtering is one of the most commonly used processes in the fabrication of electronic devices. PVD is a plasma process carried out in a vacuum chamber in which a negatively biased target is an inert gas having a relatively heavy atom (for example argon (Ar)) or a plasma of a gas mixture comprising such an inert gas Lt; / RTI > Atoms of the target material are released by the bombardment of the target by the ions of the inert gas. The released atoms accumulate as a film deposited on a substrate that rests on a substrate support pedestal disposed within the chamber.

A process kit may be disposed within the chamber to assist in forming a processing region in the desired region within the chamber relative to the substrate. Process kits typically include a cover ring, a deposition ring, and a ground shield. Confining the emitted atoms and plasma to the processing region helps to keep the other components in the chamber free of the deposited material because a higher proportion of the emitted atoms is deposited on the substrate, Promotes effective use. The deposition ring additionally prevents deposition on the periphery of the substrate support pedestal. The cover ring may include an inner ring and an outer ring and is typically used to form a labyrinth gap between the deposition ring and the ground shield to prevent deposition below the substrate. The cover ring may also be utilized to help control deposition below the edge of the substrate or at the edge of the substrate. In one embodiment of the invention, the cover ring may be included in a ground shield.

Although conventional ring and shield designs have a robust processing history, a reduction in critical dimension increases attention to contamination within the chamber. Since the ring and shield periodically contact each other when the substrate support pedestal rises and falls between the transfer position and the treatment position, the conventional design is a potential source of particulate contamination.

Also, since the conventional cover ring design is not generally connected to a temperature control source such as a chamber wall or a substrate support pedestal, the temperature of the cover ring may vary during the process cycle. The heating and cooling of the cover ring increases the stresses in the materials deposited on the cover ring, making the stressed materials easier to flake and to facilitate the generation of particles. Thus, the inventors have realized that it would be advantageous to have a process kit that contributes to minimizing chamber contamination.

Thus, there is a need in the art for an improved process kit.

The present invention generally provides a PVD chamber having a process kit for use in a physical vapor deposition (PVD) chamber and a process kit interleaving. In one embodiment, the process kit includes a deposition ring and a ground shield that sandwich each other. The deposition ring is formed with a wide pedestal contact surface and a plurality of substrate support buttons. When installed in a PVD chamber, the interspersed deposition rings and ground shields are advantageously held in contact with the substrate support pedestal and the chamber walls, thereby providing an excellent and predictable temperature that substantially minimizes process contamination from the films deposited thereon Help control. In addition, the interspersed deposition rings and ground shields are advantageously formed so that they do not touch during use in the PVD chamber, thereby eliminating potential particle sources present in conventional designs.

In one embodiment, the process kit of the present invention comprises a generally cylindrical shield, the shield comprising a substantially flat cylindrical body, at least one elongated cylindrical ring extending downwardly from the body, As shown in Fig.

In another embodiment, the process kit includes a generally cylindrical deposition ring. The deposition ring includes a substantially flat cylindrical body, an u-channel extending into at least one lower portion coupled to an outer portion of the body, an inner wall extending upwardly from an upper surface of the inner region of the body, And a substrate support shelf extending inwardly.

In yet another embodiment, a PVD chamber is provided that includes a sandwiched ground shield and a deposition ring that are formed so as not to contact during use of the PVD chamber.

A more particular description of the invention, briefly summarized above, may be had by reference to the embodiments illustrated in the accompanying drawings. It is to be noted, however, that the appended drawings illustrate only typical embodiments of this invention and are therefore not to be considered limiting of its scope, for the invention may admit to other equally effective embodiments.

1 is a simplified cross-sectional view of a semiconductor processing system having one embodiment of a process kit,

Figure 2 is a partial cross-sectional view of a process kit interfaced with the substrate support pedestal of Figure 1,

Figure 3 is a partial cross-sectional view of another embodiment of a process kit in contact with a substrate support pedestal,

Figure 4 is a partial cross-sectional view of another embodiment of a process kit in contact with a substrate support pedestal,

Figure 5 is a partial cross-sectional view of another embodiment of a process kit in contact with a substrate support pedestal,

Figure 6 is a partial cross-sectional view of another embodiment of a process kit in contact with a substrate support pedestal.

To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. It is contemplated that the elements disclosed in one embodiment may be advantageously utilized in other embodiments without specific description.

The present invention generally provides a process kit for use in a physical vapor deposition (PVD) chamber. Process kits advantageously reduce the potential for generating particulate contamination, which enhances greater process uniformity and repeatability with longer chamber part life.

FIG. 1 illustrates an exemplary semiconductor processing chamber 150 having one embodiment of a process kit 114. The process kit 114 includes a deposition ring 102 and a ground shield 162 that sandwich each other. An example of a processing chamber that may be adapted for benefit from the present invention is an IMP VECTRA (TM) PVD processing chamber available from Applied Materials, Inc. of Santa Clara, California. It is contemplated that other processing chambers, including processing chambers from different manufacturers, may be adapted for benefit from the present invention.

The exemplary processing chamber 150 includes a chamber body 152 having a bottom 154 and a cover assembly 156 and side walls 158 that define an evacuable internal volume 160 . The chamber body 150 is typically made of a welded stainless steel plate or a single block of aluminum. The sidewalls 158 generally include a sealable access port (not shown) to provide for the entry and exit of the substrate 104 from the process chamber 150. The pumping port 122 disposed in the side wall 158 is coupled to the pumping system 120 and the pumping system discharges and controls the pressure of the inner volume 160. The cover assembly 156 of the chamber 150 supports a generally annular shield 162 which shields the plasma formed within the interior volume 160 to a deposition ring 102).

The pedestal assembly 100 is supported from the bottom 154 of the chamber 150. The pedestal assembly 100 supports the deposition ring 102 with the substrate 104 during processing. The pedestal assembly 100 is coupled to the bottom 154 of the chamber 150 by a lift mechanism 118 that lifts the pedestal assembly 100 between the upper and lower positions (as shown) As shown in FIG. In the upper position, the deposition ring 102 is interdigitated with the shield 162 in a spaced relationship. The deposition ring 102 is separated from the shield 162 to allow the substrate 104 to move from the chamber 150 between the ring 102 and the shield 162 through the access port disposed in the sidewall 158 To be removed. 2) is moved through the pedestal assembly 100 to separate the pedestal assembly 100 from the pedestal assembly 100 to form a single blade robot (not shown) The wafer transfer mechanism disposed outside the processing chamber 150 as shown in FIG. A bellows 186 is typically positioned between the pedestal assembly 100 and the chamber bottom 154 to allow the interior volume 160 of the chamber body 152 to be moved from the inside of the pedestal assembly 100 and from the outside of the chamber Isolate.

The pedestal assembly 100 generally includes a substrate support 140 that is sealingly coupled to the platform housing 108. The platform housing 108 is typically made of a metal material such as stainless steel or aluminum. A cooling plate 124 is generally disposed within the platform housing 108 to thermally regulate the substrate support 140. A pedestal assembly 100 is described in U.S. Pat. No. 5,507,499 issued to Davenport et al. On April 16, 1996, as long as it can be adapted to benefit from the present invention.

The substrate support 140 may be made of aluminum or ceramic. The substrate support 140 may be an electrostatic chuck, a ceramic body, a heater, or a combination thereof. In one embodiment, the substrate support 140 is an electrostatic chuck, and the electrostatic chuck includes a dielectric body 106 having a conductive layer 112 embedded therein. Dielectric 106 is typically made of a highly thermally conductive dielectric material, such as pyrolytic boron nitride, aluminum nitride, silicon nitride, alumina, or equivalent materials.

The lid assembly 156 generally includes a lid 130, a target 132, a spacer 182, and a magnetron 134. The lid 130 is supported by the side wall 158 when in the closed position, as shown in Fig. Seals 136 are disposed between the spacer 182 and the lid 130 and the side wall 158 to prevent vacuum leakage therebetween.

The target 132 is coupled to the lid 130 and exposed to the interior volume 160 of the processing chamber 150. The target 132 provides a material that is deposited on the substrate 104 during the PVD process. A spacer 182 is disposed between the target 132 and the lid 130 and the chamber body 152 to electrically isolate the target 132 from the lid 130 and the chamber body 152.

The target 132 and the pedestal assembly 100 are biased relative to each other by a power source 184. A gas such as argon is supplied to the volume 160 from a gas source (not shown). Plasma is formed between the target 132 and the substrate 104 from the gas. The ions in the plasma are accelerated toward the target 132, causing the material to separate from the target 132. The detached target material is deposited on the substrate 104.

The magnetron 134 is coupled to the lid 130 on the outside of the processing chamber 150. The magnetron 134 includes one or more rotary magnet assemblies 138 that assist in the uniform consumption of the target 132 during PVD processing. As far as it can be utilized, the magnetron is described in U.S. Patent No. 5,953,827, issued September 21, 1999 to Or et al.

The hinge assembly 110 engages the cover assembly 156 with the process chamber 150. A motorized actuator 116 may be coupled to the hinge assembly 110 and / or the lid 130 to facilitate movement of the lid assembly 156 between the opening and the closure.

2 is a partial cross-sectional view of a process kit 114 in abutment with a substrate support pedestal assembly 100. FIG. Although not shown, the shield 162 of the process kit 114 is mounted to the chamber body 152 at a fixed height relative to the lid assembly 156. The deposition ring 102 is shown in an elevated or process position in which a labyrinth spacing 250 is formed between the deposition ring 102 and the ground shield 162 to provide plasma and deposition species And is defined within the region formed between the substrate 104 and the target 132. The deposition ring 102 and the ground shield 162 additionally provide a barrier that prevents the material emitted from the target 132 from being inadvertently deposited on other portions of the chamber. Thus, the deposition ring 102 and the ground shield 162 help efficiently transform the target 132 into a layer of material deposited on the substrate 104.

The ground shield 162 has a body 202 that is flat and substantially cylindrical and may be made and / or coated with a conductive material such as a metal. Suitable metals for use as the ground shield 162 include, in particular, stainless steel and titanium. The material selected for the ground shield 162 should be selected to be compatible with the process that is preformed in the chamber. The body 202 is mounted to the chamber body 152 such that the centerline of the body 202 and pedestal assembly 100 are substantially concentric. The centerline 200 of the body 202 shown in the embodiment of Figure 2 is oriented in a substantially vertical orientation. The location of the centerline 200 is exemplary only, and is not proportional to other features of the drawings.

The body 202 includes an upper surface 204, a lower surface 206, an outer wall 220, and an inner edge 224. 2, the upper surface 204 and lower surface 206 are substantially perpendicular to the centerline 200, except for the inclined surface 226 of the upper surface 204, Is inclined downward toward the inner edge (224) of the base (202).

The inner and outer rings 208, 210, which may form a shield or a covering ring, extend downwardly from the lower surface 206. The rings 208, 210 are generally long cylinders (compared to the general shape of the body 202). In the embodiment shown in FIG. 2, the rings 208, 210 are oriented in a generally parallel, spaced relationship. The outer ring 210 may also have the same outer diameter as the outer diameter of the outer wall 220.

The mounting section 212 extends upwardly from the upper surface 204 along the outer wall 220. The mounting section 212 includes an inner wall 214, an inner taper 216, an outer wall 222, and a mounting flange 218. The inner wall 214 extends upwardly in an orientation that is substantially perpendicular from the top surface 204 to the inner taper 216. The inner taper 216 extends upwardly and outwardly to provide a gap between the target 130 and the shield 162 (shown in FIG. 1). The outer wall 222 generally has a larger diameter than the outer diameter of the outer wall 220 of the body 202.

The mounting flange 218 extends outwardly from the outer wall 222 and engages the body 152 and / or the cover assembly 156 to secure the shield 162 in place. The mounting flange 218 may include a plurality of holes and / or slots to facilitate engagement with the body 152 and / or the cover assembly 156. The temperature control of the mounting flange 218 is enabled by conduction because the body 152 and / or the cover assembly 156 to which the shield 162 is mounted is thermally regulated.

Some portions of the ground shield 162 may be coated, textured, or otherwise treated. In one embodiment, the ground shield 162 is roughened on at least some surfaces. Roughening (e. G., Texturing) may be performed by any suitable process including etching, embossing, abrading, bead blasting, grit blasting, grinding, or by sanding. In the embodiment shown in Figure 2, all surfaces of the ground shield 162 are bead sprayed. The surface of the bead sprayed ground shield generally has a center line average roughness of about 250 microinches or greater.

The deposition ring 102 has a body 252 that is flat and substantially cylindrical and can be made of a conductive or non-conductive material. In one embodiment, the deposition ring 102 is made of a ceramic material, such as quartz, aluminum oxide, or other suitable material.

The body 252 generally includes an outer portion 274, an inner portion 276, a lower surface 256 and an upper surface 254. The upper surface 254 includes a groove 258 that receives the lip 228 of the shield 162 when the shield 162 and the ring 102 are positioned proximate to each other. A lower surface 256 is formed to rest on the shelf 240 formed around the pedestal assembly 100. The lower surface 256 may be flat and / or smooth surface finish to promote good thermal contact with the shelf 240. A relatively large contact area (as compared to the conventional design) between the lower surface 256 and the shelf 240 is excellent between the ring 102 and the pedestal assembly 100 with a relatively thin ring cross-sectional area of the body 252 Provides heat transfer. Thus, the temperature of the ring 102 can be easily maintained at a constant temperature through heat transfer with the pedestal assembly 100.

One or more temperature control elements 246 are disposed in pedestal assembly 100 directly below shelf 240 to control the temperature of substrate 104. In one embodiment, The temperature control of the ring 102 can be improved independently of the characteristics of the ring 100. The temperature control element 246 may include one or more conduits, resistive heating elements, or the like to allow heat transfer fluid to flow therethrough. The output of the temperature control element 246 is controlled by one or more suitable temperature control sources 248, such as a power source, a heat transfer fluid source,

The inner wall 260 extends upwardly from the inner portion 276 to the substrate support flange 262. The inner wall 260 has an inner diameter selected to maintain the spacing between the end 260 and the end 242 joining the shelf 240 to the upper surface 244 of the pedestal assembly 100. The inner wall 260 has a height selected to maintain the spacing between the upper surface 244 of the pedestal assembly 100 and the flange 262 of the ring 102.

The substrate support flange 262 extends inwardly from the top of the inner wall 260 and covers the outer edge of the top surface 244 of the pedestal assembly 100. In one embodiment, the flanges 262 are generally perpendicular to the inner wall 260 and parallel to the lower and upper surfaces 256, 254. The flange 262 includes a plurality of substrate support buttons 264 that support the substrate 104 spaced on the upper surface of the flange 262. The button 264 may have a rounded shape, a cylindrical shape, a truncated conical shape, or other suitable shape. The button 264 minimizes contact between the substrate 104 and the ring 102. The minimal contact between the button 264 and the substrate 104 reduces potential particle generation while minimizing the heat transfer between the ring 102 and the substrate 104. In one embodiment, the three buttons 264 are symmetrically arranged in a polar array and have a height of about 1 mm.

An upwardly facing u-channel 266 is generally formed in the outer portion 274 of the body 252. The u-channel 266 has an inner leg 268 that is coupled to the outer leg 272 by a bottom 270. The inner leg 268 extends downwardly from the lower surface 256 of the body 252 and has an inner diameter selected to maintain the spacing between the ring 102 and the pedestal assembly 100.

The inner and outer legs 268 and 272 (as compared to the body 252 of the ring 102) each have a generally cylindrical shape as a whole. In the embodiment shown in FIG. 2, the legs 268, 272 are oriented in a generally parallel spaced relationship and are configured to mate with the inner ring 208 of the ground shield 162.

The spacing between the legs 268, 272 and the inner ring 208 forms an outer region of the labyrinth spacing 250. The inner region of the labyrinth gap 250 is defined between the lip 228 of the shield 162 and the wall 260 of the deposition ring 102 and the groove 258. The spacing between the lip 228 and the deposition ring 102 may be selected to promote or minimize deposition on the side of the substrate 104 toward the pedestal assembly 100.

Because the entrance to the inner region of the labyrinth interval 250 is partially covered by the substrate 104 and deviates from the trajectory of the sputter target material within the inner volume 160, Deposition build up and bridging will occur less frequently, thereby extending the period of use between cleaning of the process kit 114. In addition, since the deposition ring 102 and the ground shield 162 of the process kit 114 never come into contact, the potential source of particles is eliminated. It should also be appreciated that the ground shield 162 and deposition ring 102 of the process kit 114 may be connected to these support structures (e.g. pedestal assembly 100 and chamber body 152 / shroud assembly 156) Because of the excellent thermal contact maintained, the thermal control of the kit 114 is improved. Enhanced thermal control enables stress management of the films deposited on the kit 114, resulting in less particle generation compared to conventional designs.

3 is a cross-sectional view of another embodiment of a process kit 300 in contact with a substrate support pedestal 100. FIG. The process kit 300 generally includes a ground shield 304 and a deposition ring 302 that fit together to form a labyrinth gap 350.

The ground shield 304 is substantially similar to the above-described ground shield. 3, the shield 304 includes a cylindrical body 306 having a top surface 308, a bottom surface 310, an inner edge 312, and an outer wall 314 . The top surface 308 includes an inclined surface 316. The lower surface 310 of the body 306 includes inner and outer rings 208, 210. In one embodiment, the inner edge 312 substantially truncates the sloped surface 316. In one embodiment,

The deposition ring 302 is substantially similar to the deposition ring described above and adds a trap 352 formed on the top surface 254 of the ring 302. A trap 352 is formed between the upper surface 254 of the ring 302 and the trap wall 360.

The trap wall 360 includes a ring 354 extending from the upper surface 254 of the ring 302 to the lip 356. The lip 356 extends inwardly and downward toward the connection point of the upper surface 254 and the inner wall 260. The distal end of the lip 356 is generally located on the upper surface 254 rather than a portion of the lip 356 next to the ring 354 such that the upper ceiling of the trap 352 is higher than the distal end of the lip 356. [ It is closer. This geometry facilitates capture of the deposition material without deposition enhancement, thereby preventing bridging of the spacing formed between the substrate 104 and the lip 356.

In one embodiment, the upper surface of the ring 354 includes an outer inclined wall 362 and an inner inclined wall 364 that meet at apex 366. In one embodiment, Inner sloping wall 364 extends downward from apex 366 to lip 356. The outer ramp wall 362 extends downward from the apex 366 to the outer trap wall 368. The outer ramp wall 362 of the deposition ring 302 and the inner edge 312 of the shield 304 form an inlet from the processing volume of the inner volume 160 to the labyrinth gap 350.

The process kit 300 of FIG. 3 separates the plasma isolation feature through the labyrinth spacing 350 from the edge deposition control through the trap 352. Additionally, the fabrication cost is reduced because, in this embodiment, the gap between the inner and outer diameters of the shield 304 is substantially reduced, without a significant increase in the material required to fabricate the matching deposition ring 302.

4 is a cross-sectional view of another embodiment of a process kit 400 in contact with a substrate support pedestal 100. FIG. Process kits 400 generally include a ground shield 404 and a deposition ring 402 that fit together to form a maze clearance 450.

The ground shield 404 is generally similar to the ground shield described above with reference to Figures 1 and 2. 4, the shield 404 includes a flat cylindrical body 406 having a top surface 408, a bottom surface 410, an inner edge 412, and an outer wall 414. In this embodiment, Respectively. The top surface 408 includes an inclined surface 416. The lower surface 410 of the body 406 has a cylindrical ring 418.

The cylindrical ring 418 extends downward and outward and fits together with the deposition ring 402. In the embodiment shown in FIG. 4, the ring 418 has an orientation of about 5 to 35 degrees with respect to the centerline of the shield 404.

The deposition ring 402 is generally similar to the deposition ring described above, and has an inclined u-channel 420 additionally. The u-channel 420 includes an inner leg 422 that is coupled to the outer leg 424 by a bottom 426. The legs 422 and 424 have an orientation of about 5 to 35 degrees with respect to the centerline of the ring 402. In the embodiment shown in FIG. 4, the legs 422,424 are oriented at the same angle as the cylindrical ring 418 of the shield 404.

The inner diameter of the distal end of the outer leg 424 is generally selected to release the distal end of the ring 418 so that the shield 404 and the deposition ring 402 can be removed from the pedestal assembly 100 When it is lowered, it can be separated without interference. Legs 422 and 424 and ring 418 form an outer portion of maze clearance 450 when pedestal assembly 100 is raised to a process position as shown in FIG.

Optionally, an extension 430 (shown in phantom) may be formed at the distal end of the outer leg 424. The extension 430 is elongated and adds additional turns to the maze interval 450. The extension 430 includes a flange 432 and a distal ring 434. The flange 432 extends outwardly from the distal end of the outer leg 424 to the distal ring 434. The distal ring 434 has an inner diameter selected to surround the outer wall 414 of the shield 404 in spaced relationship when the pedestal assembly 100 is in the raised position as shown.

The process kit 400 of FIG. 4 is economical to manufacture and has advantages over conventional designs, as described above.

5 is a cross-sectional view of another embodiment of a process kit 500 in contact with a substrate support pedestal 100. FIG. Process kits 500 generally include a ground shield 504 and a deposition ring 502 that fit together to form a maze gap 550.

The ground shield 504 is generally similar to the ground shield described above with reference to Figures 3 and 4. 5, the shield 504 includes a cylindrical body 506 having a top surface 308, a bottom surface 310, an inner edge 312, and an outer wall 314 . The top surface 308 includes an inclined surface 316. The bottom surface 310 of the body 306 includes a cylindrical ring 418. The cylindrical ring 418 extends downward and outward and fits together with the deposition ring 502.

The inner portion of the deposition ring 502 is substantially similar to the deposition ring 302 described above with reference to FIG. Ring 502 includes a trap 352 formed on top surface 254 of ring 502. Trap 352 is formed between upper surface 254 and trap wall 360. Trap wall 360 includes ring 354, lip 356 and sloped surfaces 362 and 364 that meet at apex 366.

The outer portion of the deposition ring 502 is substantially similar to the deposition ring 402 described above with reference to FIG. The ring 502 includes a sloped u-channel 420. The u-channel 420 includes an inner leg 422 that is coupled to the outer leg 424 by a bottom 426. The legs 422 and 424 are formed to fit together with the cylindrical ring 418 of the shield 504, as described above.

6 is a cross-sectional view of another embodiment of a process kit 600 in contact with a substrate support pedestal 100. As shown in FIG. The process kit 600 generally includes a ground shield 662 and a deposition ring 620 sandwiched together to form a maze gap 650. The deposition ring 620 and the shield 662 are substantially similar to the ground shield 162 and the deposition ring 102 as described above and thus similar configurations are provided with the same reference numerals without further explanation for brevity.

In the embodiment shown in FIG. 6, the inner wall 260 of the deposition ring 620 has a substrate support end 622. The substrate support end 622 does not extend radially inward of the inner wall 260. The substrate support end 622 provides a substrate seating surface that is configured to support the substrate 104 on the surface 244 of the pedestal assembly 100 and is substantially planar in one embodiment, Lt; / RTI > In one embodiment, the inner wall 260 has a height of about 0.45 inches. The intersection between the lower surface 256 of the deposition ring flange 262 and the inner wall 260 can be angled, for example at a 45 degree angle, to provide additional clearance to the pedestal assembly 100.

6, the deposition ring 620 may also be textured on its upper surface, as indicated by dashed line 624. The textured surface provides enhanced tackiness for the material deposited on the ring 620 such that the particles or flakes of the deposited material are not easily separated from the ring 620 and do not readily become a processing contaminant during processing. This deposited deposition material may be removed from the ring 620 utilizing an in-situ and / or ex-situ cleaning process. In one embodiment, the ring may be textured as described above.

The ground shield 662 includes a mounting section 212 and the mounting section has an end 606 formed in the upper outer diameter 604. The end 606 couples the outer diameter 604 to the substantially horizontal upper surface 602. The transition radius 608 couples the outer wall 222 of the ground shield 662 and the upper outer wall 604.

The lip 610 extends downwardly from the upper outer wall 604 and beyond the transition radius 608, as shown in FIG. The lip 610 provides a reduced contact area between the process chamber and the ground shield 662.

The inner surface of the top of the ground shield 662 may be textured as indicated by the dashed line 652. As discussed above, the textured surface of the ground shield provides enhanced tackiness of the deposition material so that the deposition material may not become a process contaminant later.

The lip 228 of the ground shield 662 may also include a groove 612 formed in the transition between the lower surface 206 of the shield body 202 and the lip 228. This groove 612 provides additional clearance between the ring 620 and the shield 662 to accommodate the large amount of material deposited within the groove 258 of the ring 620.

Like the process kit described above, the process kit 600 of FIG. 6 is economical to manufacture and has advantages over conventional designs, as described above.

Thus, a process kit for a PVD process chamber has been described wherein the potential for particulate generation is advantageously reduced because the deposition ring and ground shield of the process kit do not contact during operation. Also, since the ring and shield of the kit are held in contact with the temperature-controlled surface, the temperature of the process kit can be controlled to reduce and / or eliminate thermal cycling, Lt; RTI ID = 0.0 > material. ≪ / RTI > In addition, the process kits of the present invention provide attractive manufacturing costs due to the compact design and removal of the third ring present in conventional process kits.

While the foregoing is directed to preferred embodiments of the invention, other and further embodiments of the invention may be devised without departing from the basic scope thereof, and the scope of the invention is determined by the claims that follow.

Claims (28)

As a process kit: A cylindrical shield, the shield comprising: A flat cylindrical body having an upper surface that tapers down to an inner end; At least one elongated cylindrical ring extending downwardly from the body; And And a mounting portion extending from an outer wall of the main body to an upper surface of the main body, The mounting portion includes a mounting flange extending radially outward beyond an outer wall of the body, an inner wall extending from an upper surface of the body, and an inner taper extending radially outwardly and upwardly from an upper end of the inner wall , Process kit. The method according to claim 1, Wherein the body is made of one or more of stainless steel or titanium, Process kit. The method according to claim 1, The body is made of or coated with a conductive material, Process kit. delete delete delete The method according to claim 1, Wherein the at least one elongate cylindrical ring has an orientation of 5 to 35 degrees outward relative to a centerline of the body, Process kit. The method according to claim 1, Wherein the at least one elongated cylindrical ring comprises: An inner ring; And Further comprising: an outer ring spaced parallel to the inner ring; Process kit. delete The method according to claim 1, Wherein the inner edge of the body truncates the sloped surface and the inner edge is parallel to the centerline of the body, Process kit. The method according to claim 1, Further comprising a cylindrical deposition ring, said deposition ring comprising: A flat cylindrical body having a top surface and a bottom surface configured to be supported on a ledge of a substrate support pedestal; One or more u-channels coupled to an outer portion of the body and extending downward; An inner wall extending upwardly from an upper surface of an inner region of the body and having a substrate support surface; And And a substrate support shelf extending radially inwardly from the inner wall, Wherein the shield and the deposition ring are disposed interleaved with the u-channel in one or more elongate cylindrical rings of the shield, Process kit. delete delete delete delete delete delete delete delete As a process kit: A cylindrical deposition ring, said deposition ring comprising: A flat cylindrical body having a top surface and a bottom surface configured to be supported on a shelf of a substrate support pedestal; One or more u-channels coupled to an outer portion of the body and extending downward; And And an inner wall extending upwardly from an upper surface of the inner region of the body and having a substrate support surface, Process kit. 21. The method of claim 20, The deposition ring comprising: A shelf extending radially inwardly from the inner wall; And Further comprising: a plurality of buttons forming the substrate support surface and disposed on an upper surface of the shelf; Process kit. 22. The method of claim 21, The plurality of buttons further comprising three buttons that are evenly spaced in a polar array, Process kit. 21. The method of claim 20, Wherein the opening of the u-channel is upward, Process kit. 21. The method of claim 20, The u-channel is: A first leg coupled to the body of the deposition ring; A second leg spaced outwardly from the first leg; And Further comprising: a floor connecting said legs; Process kit. delete 25. The method of claim 24, Wherein the body is made of one or more of stainless steel or titanium, Process kit. 21. The method of claim 20, The body of the deposition ring comprises: A trap wall extending upwardly from an upper surface of the deposition ring; And And a lip extending downwardly and inwardly from the trap wall to overhang on an inner portion of the upper surface of the deposition ring. Process kit. 28. The method of claim 27, Wherein the upper surface of the trap wall further comprises an inner inclined wall which meets an outer inclined wall at an apex, Process kit.

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