KR101500056B1 - 광학 네트워크용 반사 반도체 광학 증폭기 - Google Patents

광학 네트워크용 반사 반도체 광학 증폭기 Download PDF

Info

Publication number
KR101500056B1
KR101500056B1 KR1020127033993A KR20127033993A KR101500056B1 KR 101500056 B1 KR101500056 B1 KR 101500056B1 KR 1020127033993 A KR1020127033993 A KR 1020127033993A KR 20127033993 A KR20127033993 A KR 20127033993A KR 101500056 B1 KR101500056 B1 KR 101500056B1
Authority
KR
South Korea
Prior art keywords
active material
wavelength
light
reflector
optical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020127033993A
Other languages
English (en)
Korean (ko)
Other versions
KR20130041835A (ko
Inventor
로망 브르노
프란시스 포앙
Original Assignee
알까뗄 루슨트
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 알까뗄 루슨트 filed Critical 알까뗄 루슨트
Publication of KR20130041835A publication Critical patent/KR20130041835A/ko
Application granted granted Critical
Publication of KR101500056B1 publication Critical patent/KR101500056B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/29—Repeaters
    • H04B10/291—Repeaters in which processing or amplification is carried out without conversion of the main signal from optical form
    • H04B10/297—Bidirectional amplification
    • H04B10/2971—A single amplifier for both directions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H01S5/5027—Concatenated amplifiers, i.e. amplifiers in series or cascaded
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/29—Repeaters
    • H04B10/291—Repeaters in which processing or amplification is carried out without conversion of the main signal from optical form
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/23—Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
    • H01S3/2308—Amplifier arrangements, e.g. MOPA
    • H01S3/2325—Multi-pass amplifiers, e.g. regenerative amplifiers
    • H01S3/2333—Double-pass amplifiers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
    • H01S5/1017—Waveguide having a void for insertion of materials to change optical properties

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optical Communication System (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
KR1020127033993A 2010-06-30 2011-06-16 광학 네트워크용 반사 반도체 광학 증폭기 Expired - Fee Related KR101500056B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP10290362.2A EP2403079B1 (en) 2010-06-30 2010-06-30 Reflective semiconductor optical amplifier for optical networks
EP10290362.2 2010-06-30
PCT/EP2011/060045 WO2012000804A1 (en) 2010-06-30 2011-06-16 Reflective semiconductor optical amplifier for optical networks

Publications (2)

Publication Number Publication Date
KR20130041835A KR20130041835A (ko) 2013-04-25
KR101500056B1 true KR101500056B1 (ko) 2015-03-06

Family

ID=43020406

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020127033993A Expired - Fee Related KR101500056B1 (ko) 2010-06-30 2011-06-16 광학 네트워크용 반사 반도체 광학 증폭기

Country Status (9)

Country Link
US (1) US8948605B2 (enExample)
EP (1) EP2403079B1 (enExample)
JP (1) JP5662568B2 (enExample)
KR (1) KR101500056B1 (enExample)
CN (1) CN102986098B (enExample)
MY (1) MY172343A (enExample)
SG (1) SG186215A1 (enExample)
TW (1) TWI497136B (enExample)
WO (1) WO2012000804A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102168666B1 (ko) * 2013-08-26 2020-10-21 (주)승재 반사형 반도체 광 증폭기 패키지
KR102168665B1 (ko) * 2013-08-26 2020-10-21 (주)승재 반사형 반도체 광 증폭기가 포함된 수동형 광 네트워크
TWI581401B (zh) * 2014-06-09 2017-05-01 Chunghwa Telecom Co Ltd Reflective Semiconductor Optical Amplifier
US12451962B2 (en) * 2020-03-02 2025-10-21 Nec Corporation Monitoring signal light output apparatus, submarine apparatus, and optical communication system

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000058953A (ja) * 1998-08-11 2000-02-25 Kdd Corp 光増幅装置
JP2000338453A (ja) * 1999-05-26 2000-12-08 Agency Of Ind Science & Technol 半導体光パルス圧縮導波路素子
US20040218652A1 (en) * 2003-05-01 2004-11-04 Raytheon Company Eye-safe solid state laser system and method
KR100842277B1 (ko) * 2006-12-07 2008-06-30 한국전자통신연구원 반사형 반도체 광증폭기 및 수퍼 루미네센스 다이오드

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4794346A (en) * 1984-11-21 1988-12-27 Bell Communications Research, Inc. Broadband semiconductor optical amplifier structure
JPH0575093A (ja) 1991-09-13 1993-03-26 Nippon Telegr & Teleph Corp <Ntt> 光集積回路
JP3149987B2 (ja) 1992-03-23 2001-03-26 キヤノン株式会社 半導体光増幅素子およびその使用法
SE470454B (sv) * 1992-08-26 1994-04-11 Ericsson Telefon Ab L M Optisk filteranordning
JP4005705B2 (ja) 1998-07-22 2007-11-14 日立電線株式会社 広帯域半導体光増幅器
JP2001156364A (ja) * 1999-11-29 2001-06-08 Sumitomo Electric Ind Ltd 広帯域光増幅器
JP2002148733A (ja) 2000-11-07 2002-05-22 Fuji Photo Film Co Ltd 放射線画像読取装置
US6757100B2 (en) * 2001-02-12 2004-06-29 Metrophotonics Inc. Cascaded semiconductor optical amplifier
JP2002280649A (ja) 2001-03-15 2002-09-27 Nippon Telegr & Teleph Corp <Ntt> 光の反射体及び光増幅器
JP2003124578A (ja) 2001-10-09 2003-04-25 Nippon Telegr & Teleph Corp <Ntt> 半導体光増幅素子
US6788727B2 (en) * 2002-06-13 2004-09-07 Intel Corporation Method and apparatus for tunable wavelength conversion using a bragg grating and a laser in a semiconductor substrate
US7095772B1 (en) * 2003-05-22 2006-08-22 Research Foundation Of The University Of Central Florida, Inc. Extreme chirped/stretched pulsed amplification and laser
US7643758B1 (en) * 2006-01-04 2010-01-05 Cisco Technology, Inc. CWDM system architecture with amplification
JPWO2007080891A1 (ja) * 2006-01-11 2009-06-11 日本電気株式会社 半導体レーザ、モジュール、及び、光送信機
US7450848B2 (en) * 2006-04-28 2008-11-11 Broadway Networks, Ltd, High-speed fiber-to-the-premise optical communication system
JP2009124046A (ja) 2007-11-16 2009-06-04 Advanced Telecommunication Research Institute International 半導体レーザ素子および半導体レーザジャイロ
KR100987793B1 (ko) * 2008-10-10 2010-10-13 한국전자통신연구원 반사형 반도체 광 증폭기 및 이를 이용하는 광신호 처리방법
US8594469B2 (en) * 2008-12-22 2013-11-26 Electronics And Telecommunications Research Institute Optical amplifier

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000058953A (ja) * 1998-08-11 2000-02-25 Kdd Corp 光増幅装置
JP2000338453A (ja) * 1999-05-26 2000-12-08 Agency Of Ind Science & Technol 半導体光パルス圧縮導波路素子
US20040218652A1 (en) * 2003-05-01 2004-11-04 Raytheon Company Eye-safe solid state laser system and method
KR100842277B1 (ko) * 2006-12-07 2008-06-30 한국전자통신연구원 반사형 반도체 광증폭기 및 수퍼 루미네센스 다이오드

Also Published As

Publication number Publication date
CN102986098A (zh) 2013-03-20
JP5662568B2 (ja) 2015-02-04
MY172343A (en) 2019-11-21
TW201213910A (en) 2012-04-01
CN102986098B (zh) 2014-12-17
JP2013530542A (ja) 2013-07-25
US8948605B2 (en) 2015-02-03
US20130101297A1 (en) 2013-04-25
TWI497136B (zh) 2015-08-21
KR20130041835A (ko) 2013-04-25
WO2012000804A1 (en) 2012-01-05
EP2403079B1 (en) 2014-01-15
SG186215A1 (en) 2013-01-30
EP2403079A1 (en) 2012-01-04

Similar Documents

Publication Publication Date Title
KR101311711B1 (ko) 조정 가능한 로컬 오실레이터를 포함하는 코히어런트 광학 시스템
US8543001B2 (en) Cascaded injection locking of fabry-perot laser for wave division multiplexing passive optical networks
US9497523B2 (en) Arrangement for deploying co-existing GPON and XGPON optical communication systems
CN103370888B (zh) 具有光线路终端收发器的光网络通信系统及其操作方法
Effenberger et al. Standardization trends and prospective views on the next generation of broadband optical access systems
US20090110398A1 (en) Electrical point-to-multipoint repeater for PON
US8774630B2 (en) Method, apparatus, and system for a self-seeded external cavity laser for dense wavelength division multiplexing applications
US9341774B2 (en) Optically matched laser array coupling assembly for coupling laser array to arrayed waveguide grating
US9287987B2 (en) Self-seeded colorless burst-mode transmitter using reflective semiconductor optical amplifier and injection locked Fabry-Perot laser
CN105934899A (zh) 光网络单元(onu)波长自调谐
Ghoniemy Enhanced time and wavelength division multiplexed passive optical network (TWDM-PON) for triple-play broadband service delivery in FTTx networks
US8364041B2 (en) Method and arrangement for receiving an optical input signal and transmitting an optical output signal
CN101127571A (zh) 一种wdm-pon系统共享的公共光源及光源共享的方法
KR101500056B1 (ko) 광학 네트워크용 반사 반도체 광학 증폭기
JP2010166279A (ja) 光通信システムおよび光集線装置
US9699532B2 (en) Systems and methods of hybrid DWDM aggregation and extension for time division multiplexing passive optical networks
US9602216B2 (en) Reflective light-emitting device for a WDM PON optical access network, the device including a light source with an optical gain medium
Nakamura et al. 40Gbit/s λ-tunable stacked-WDM/TDM-PON using dynamic wavelength and bandwidth allocation
Chan et al. Novel WDM passive optical network with bidirectional protection
Spiekman Semiconductor optical amplifiers in access networks
Bohara et al. Optical Networks
Feng et al. Flexible, low-latency peer-to-peer networking over long-reach WDM/TDM PON systems
Surya et al. WDM PON
KR20050069472A (ko) 파장 분할 다중화 방식의 수동형 광 가입자망 시스템

Legal Events

Date Code Title Description
A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

FPAY Annual fee payment

Payment date: 20180223

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20200303

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20200303