JP5662568B2 - 光学ネットワークのための反射型半導体光増幅器 - Google Patents

光学ネットワークのための反射型半導体光増幅器 Download PDF

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Publication number
JP5662568B2
JP5662568B2 JP2013517159A JP2013517159A JP5662568B2 JP 5662568 B2 JP5662568 B2 JP 5662568B2 JP 2013517159 A JP2013517159 A JP 2013517159A JP 2013517159 A JP2013517159 A JP 2013517159A JP 5662568 B2 JP5662568 B2 JP 5662568B2
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active material
wavelength
light
reflector
optical
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JP2013517159A
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Japanese (ja)
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JP2013530542A5 (enExample
JP2013530542A (ja
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ブレノ，ロマン
ポイント，フランシス
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アルカテル−ルーセント
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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/29—Repeaters
    • H04B10/291—Repeaters in which processing or amplification is carried out without conversion of the main signal from optical form
    • H04B10/297—Bidirectional amplification
    • H04B10/2971—A single amplifier for both directions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H01S5/5027—Concatenated amplifiers, i.e. amplifiers in series or cascaded
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/29—Repeaters
    • H04B10/291—Repeaters in which processing or amplification is carried out without conversion of the main signal from optical form
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/23—Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
    • H01S3/2308—Amplifier arrangements, e.g. MOPA
    • H01S3/2325—Multi-pass amplifiers, e.g. regenerative amplifiers
    • H01S3/2333—Double-pass amplifiers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
    • H01S5/1017—Waveguide having a void for insertion of materials to change optical properties

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optical Communication System (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
JP2013517159A 2010-06-30 2011-06-16 光学ネットワークのための反射型半導体光増幅器 Expired - Fee Related JP5662568B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP10290362.2A EP2403079B1 (en) 2010-06-30 2010-06-30 Reflective semiconductor optical amplifier for optical networks
EP10290362.2 2010-06-30
PCT/EP2011/060045 WO2012000804A1 (en) 2010-06-30 2011-06-16 Reflective semiconductor optical amplifier for optical networks

Publications (3)

Publication Number Publication Date
JP2013530542A JP2013530542A (ja) 2013-07-25
JP2013530542A5 JP2013530542A5 (enExample) 2014-08-14
JP5662568B2 true JP5662568B2 (ja) 2015-02-04

Family

ID=43020406

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013517159A Expired - Fee Related JP5662568B2 (ja) 2010-06-30 2011-06-16 光学ネットワークのための反射型半導体光増幅器

Country Status (9)

Country Link
US (1) US8948605B2 (enExample)
EP (1) EP2403079B1 (enExample)
JP (1) JP5662568B2 (enExample)
KR (1) KR101500056B1 (enExample)
CN (1) CN102986098B (enExample)
MY (1) MY172343A (enExample)
SG (1) SG186215A1 (enExample)
TW (1) TWI497136B (enExample)
WO (1) WO2012000804A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102168666B1 (ko) * 2013-08-26 2020-10-21 (주)승재 반사형 반도체 광 증폭기 패키지
KR102168665B1 (ko) * 2013-08-26 2020-10-21 (주)승재 반사형 반도체 광 증폭기가 포함된 수동형 광 네트워크
TWI581401B (zh) * 2014-06-09 2017-05-01 Chunghwa Telecom Co Ltd Reflective Semiconductor Optical Amplifier
US12451962B2 (en) * 2020-03-02 2025-10-21 Nec Corporation Monitoring signal light output apparatus, submarine apparatus, and optical communication system

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4794346A (en) * 1984-11-21 1988-12-27 Bell Communications Research, Inc. Broadband semiconductor optical amplifier structure
JPH0575093A (ja) 1991-09-13 1993-03-26 Nippon Telegr & Teleph Corp <Ntt> 光集積回路
JP3149987B2 (ja) 1992-03-23 2001-03-26 キヤノン株式会社 半導体光増幅素子およびその使用法
SE470454B (sv) * 1992-08-26 1994-04-11 Ericsson Telefon Ab L M Optisk filteranordning
JP4005705B2 (ja) 1998-07-22 2007-11-14 日立電線株式会社 広帯域半導体光増幅器
JP2000058953A (ja) * 1998-08-11 2000-02-25 Kdd Corp 光増幅装置
JP3328881B2 (ja) 1999-05-26 2002-09-30 独立行政法人産業技術総合研究所 半導体光パルス圧縮導波路素子及び半導体光パルス発生レーザ
JP2001156364A (ja) * 1999-11-29 2001-06-08 Sumitomo Electric Ind Ltd 広帯域光増幅器
JP2002148733A (ja) 2000-11-07 2002-05-22 Fuji Photo Film Co Ltd 放射線画像読取装置
US6757100B2 (en) * 2001-02-12 2004-06-29 Metrophotonics Inc. Cascaded semiconductor optical amplifier
JP2002280649A (ja) 2001-03-15 2002-09-27 Nippon Telegr & Teleph Corp <Ntt> 光の反射体及び光増幅器
JP2003124578A (ja) 2001-10-09 2003-04-25 Nippon Telegr & Teleph Corp <Ntt> 半導体光増幅素子
US6788727B2 (en) * 2002-06-13 2004-09-07 Intel Corporation Method and apparatus for tunable wavelength conversion using a bragg grating and a laser in a semiconductor substrate
US6891878B2 (en) * 2003-05-01 2005-05-10 Raytheon Company Eye-safe solid state laser system and method
US7095772B1 (en) * 2003-05-22 2006-08-22 Research Foundation Of The University Of Central Florida, Inc. Extreme chirped/stretched pulsed amplification and laser
US7643758B1 (en) * 2006-01-04 2010-01-05 Cisco Technology, Inc. CWDM system architecture with amplification
JPWO2007080891A1 (ja) * 2006-01-11 2009-06-11 日本電気株式会社 半導体レーザ、モジュール、及び、光送信機
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KR100842277B1 (ko) 2006-12-07 2008-06-30 한국전자통신연구원 반사형 반도체 광증폭기 및 수퍼 루미네센스 다이오드
JP2009124046A (ja) 2007-11-16 2009-06-04 Advanced Telecommunication Research Institute International 半導体レーザ素子および半導体レーザジャイロ
KR100987793B1 (ko) * 2008-10-10 2010-10-13 한국전자통신연구원 반사형 반도체 광 증폭기 및 이를 이용하는 광신호 처리방법
US8594469B2 (en) * 2008-12-22 2013-11-26 Electronics And Telecommunications Research Institute Optical amplifier

Also Published As

Publication number Publication date
CN102986098A (zh) 2013-03-20
MY172343A (en) 2019-11-21
TW201213910A (en) 2012-04-01
CN102986098B (zh) 2014-12-17
JP2013530542A (ja) 2013-07-25
US8948605B2 (en) 2015-02-03
US20130101297A1 (en) 2013-04-25
TWI497136B (zh) 2015-08-21
KR20130041835A (ko) 2013-04-25
WO2012000804A1 (en) 2012-01-05
EP2403079B1 (en) 2014-01-15
SG186215A1 (en) 2013-01-30
EP2403079A1 (en) 2012-01-04
KR101500056B1 (ko) 2015-03-06

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