KR101500052B1 - 마이크로리소그래피 투영 노광 장치를 위한 투영 대물렌즈 - Google Patents

마이크로리소그래피 투영 노광 장치를 위한 투영 대물렌즈 Download PDF

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KR101500052B1
KR101500052B1 KR1020127024577A KR20127024577A KR101500052B1 KR 101500052 B1 KR101500052 B1 KR 101500052B1 KR 1020127024577 A KR1020127024577 A KR 1020127024577A KR 20127024577 A KR20127024577 A KR 20127024577A KR 101500052 B1 KR101500052 B1 KR 101500052B1
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South Korea
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projection objective
projection
plane
optical element
section
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Expired - Lifetime
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KR1020127024577A
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English (en)
Korean (ko)
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KR20120130229A (ko
Inventor
노르베르트 바브라
로베르트 에데르
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칼 짜이스 에스엠티 게엠베하
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G03F7/706—Aberration measurement
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B13/00—Optical objectives specially designed for the purposes specified below
    • G02B13/24—Optical objectives specially designed for the purposes specified below for reproducing or copying at short object distances
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B13/00—Optical objectives specially designed for the purposes specified below
    • G02B13/18—Optical objectives specially designed for the purposes specified below with lenses having one or more non-spherical faces, e.g. for reducing geometrical aberration
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/0025—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for optical correction, e.g. distorsion, aberration
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2008—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the reflectors, diffusers, light or heat filtering means or anti-reflective means used
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70225—Optical aspects of catadioptric systems, i.e. comprising reflective and refractive elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70241—Optical aspects of refractive lens systems, i.e. comprising only refractive elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70308—Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70975—Assembly, maintenance, transport or storage of apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Public Health (AREA)
  • Epidemiology (AREA)
  • Environmental & Geological Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Lenses (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020127024577A 2004-06-10 2005-06-02 마이크로리소그래피 투영 노광 장치를 위한 투영 대물렌즈 Expired - Lifetime KR101500052B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US57852204P 2004-06-10 2004-06-10
US60/578,522 2004-06-10
PCT/EP2005/005930 WO2005121899A1 (en) 2004-06-10 2005-06-02 Projection objective for a microlithographic projection exposure apparatus

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020067025324A Division KR101492266B1 (ko) 2004-06-10 2005-06-02 마이크로리소그래피 투영 노광 장치를 위한 투영 대물렌즈

Publications (2)

Publication Number Publication Date
KR20120130229A KR20120130229A (ko) 2012-11-29
KR101500052B1 true KR101500052B1 (ko) 2015-03-09

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ID=34970291

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Application Number Title Priority Date Filing Date
KR1020127024577A Expired - Lifetime KR101500052B1 (ko) 2004-06-10 2005-06-02 마이크로리소그래피 투영 노광 장치를 위한 투영 대물렌즈
KR1020067025324A Expired - Lifetime KR101492266B1 (ko) 2004-06-10 2005-06-02 마이크로리소그래피 투영 노광 장치를 위한 투영 대물렌즈

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KR1020067025324A Expired - Lifetime KR101492266B1 (ko) 2004-06-10 2005-06-02 마이크로리소그래피 투영 노광 장치를 위한 투영 대물렌즈

Country Status (6)

Country Link
US (6) US8064041B2 (enExample)
EP (1) EP1754110B1 (enExample)
JP (2) JP5629050B2 (enExample)
KR (2) KR101500052B1 (enExample)
DE (1) DE602005008591D1 (enExample)
WO (1) WO2005121899A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5629050B2 (ja) 2004-06-10 2014-11-19 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィ投影露光装置のための投影対物レンズ
EP1746463A2 (de) * 2005-07-01 2007-01-24 Carl Zeiss SMT AG Verfahren zum Korrigieren eines lithographischen Projektionsobjektivs und derartiges Projektionsobjektiv
JP5174810B2 (ja) 2006-06-16 2013-04-03 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィ投影露光装置の投影対物器械
US9715214B2 (en) 2010-09-24 2017-07-25 The Arizona Board Of Regents On Behalf Of The University Of Arizona Confocal rainbow volume holographic imaging system
US9436158B2 (en) * 2011-10-21 2016-09-06 The Arizona Board Of Regents On Behalf Of The University Of Arizona Volume holographic imaging system (VHIS) endoscope
DE102012112773B4 (de) 2012-12-20 2020-04-30 Jenoptik Optical Systems Gmbh Verfahren zur Herstellung einer wellenfrontkorrigierten optischen Anordnung aus mindestens zwei optischen Elementen und Verwendung des Verfahrens
JP6360825B2 (ja) * 2013-04-03 2018-07-18 オリンパス株式会社 結像光学系、照明装置および観察装置
CN107076974A (zh) * 2014-10-03 2017-08-18 奥林巴斯株式会社 光轴方向扫描型显微镜装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010007379A (ko) * 1999-06-14 2001-01-26 미다라이 후지오 투영광학시스템 및 이를 이용한 투영노광장치

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI81898C (fi) * 1988-06-23 1990-12-10 Partek Ab Anordning foer rullning av isolermaterialskikt.
US5117255A (en) 1990-09-19 1992-05-26 Nikon Corporation Projection exposure apparatus
US5148314A (en) 1991-06-06 1992-09-15 Chen Chungte W Optical systems employing refractive and diffractive optical elements to correct for chromatic aberration
US5592259A (en) 1991-08-09 1997-01-07 Nikon Corporation Photomask, an exposure method and a projection exposure apparatus
US5392119A (en) 1993-07-13 1995-02-21 Litel Instruments Plate correction of imaging systems
JP3341269B2 (ja) 1993-12-22 2002-11-05 株式会社ニコン 投影露光装置、露光方法、半導体の製造方法及び投影光学系の調整方法
US6333776B1 (en) 1994-03-29 2001-12-25 Nikon Corporation Projection exposure apparatus
JP3893626B2 (ja) 1995-01-25 2007-03-14 株式会社ニコン 投影光学装置の調整方法、投影光学装置、露光装置及び露光方法
US6545746B1 (en) * 1996-03-04 2003-04-08 Nikon Corporation Projection exposure apparatus
EP0824721B1 (en) 1996-03-07 2000-07-26 Koninklijke Philips Electronics N.V. Imaging system and apparatus for ultraviolet lithography
US6157498A (en) 1996-06-19 2000-12-05 Nikon Corporation Dual-imaging optical system
DE19639586A1 (de) 1996-09-26 1998-04-02 Zeiss Carl Fa Katadioptrisches Mikrolithographie-Reduktionsobjektiv
JP4192279B2 (ja) 1996-09-27 2008-12-10 株式会社ニコン 投影光学系の製造方法、該製造方法によって製造された投影光学系、投影露光装置および方法、並びに半導体装置の製造方法
US6522386B1 (en) 1997-07-24 2003-02-18 Nikon Corporation Exposure apparatus having projection optical system with aberration correction element
JPH1145842A (ja) 1997-07-24 1999-02-16 Nikon Corp 投影露光装置と露光方法、該露光装置の調整方法、及び回路デバイス製造方法
JP2000091209A (ja) 1998-09-14 2000-03-31 Nikon Corp 露光装置の製造方法、露光装置、及びデバイス製造方法
US6396067B1 (en) 1998-05-06 2002-05-28 Koninklijke Philips Electronics N.V. Mirror projection system for a scanning lithographic projection apparatus, and lithographic apparatus comprising such a system
DE19827603A1 (de) 1998-06-20 1999-12-23 Zeiss Carl Fa Optisches System, insbesondere Projektions-Belichtungsanlage der Mikrolithographie
JP4717974B2 (ja) 1999-07-13 2011-07-06 株式会社ニコン 反射屈折光学系及び該光学系を備える投影露光装置
US6366389B1 (en) 1999-08-17 2002-04-02 Michael Wraback High contrast, ultrafast optically-addressed ultraviolet light modulator based upon optical anisotropy
JP2001168000A (ja) * 1999-12-03 2001-06-22 Nikon Corp 露光装置の製造方法、および該製造方法によって製造された露光装置を用いたマイクロデバイスの製造方法
TW538256B (en) 2000-01-14 2003-06-21 Zeiss Stiftung Microlithographic reduction projection catadioptric objective
WO2002044786A2 (en) 2000-11-28 2002-06-06 Carl Zeiss Smt Ag Catadioptric projection system for 157 nm lithography
JP2002250865A (ja) 2000-06-14 2002-09-06 Nikon Corp 投影光学系、露光装置、およびそれらの製造方法
JP4245286B2 (ja) 2000-10-23 2009-03-25 株式会社ニコン 反射屈折光学系および該光学系を備えた露光装置
JP4552337B2 (ja) 2000-12-28 2010-09-29 株式会社ニコン 投影光学系の製造方法及び露光装置の製造方法
DE10120446C2 (de) * 2001-04-26 2003-04-17 Zeiss Carl Projektionsbelichtungsanlage sowie Verfahren zur Kompensation von Abbildungsfehlern in einer Projektionsbelichtungsanlage, insbesondere für die Mikro-Lithographie
WO2002093230A1 (en) 2001-05-15 2002-11-21 Industrial Research Limited High etendue optical imaging system
EP1306698A1 (en) 2001-10-26 2003-05-02 Nikon Corporation Multilayer reflective mirrors for EUV, wavefront-aberration-correction methods for the same, and EUV optical systems comprising the same
EP1369608A3 (en) 2002-05-23 2005-06-01 Nsk Ltd Linear guide apparatus
JP2005533285A (ja) 2002-07-18 2005-11-04 カール・ツァイス・エスエムティー・アーゲー 反射屈折投影対物レンズ
TWI249082B (en) * 2002-08-23 2006-02-11 Nikon Corp Projection optical system and method for photolithography and exposure apparatus and method using same
DE10258715B4 (de) 2002-12-10 2006-12-21 Carl Zeiss Smt Ag Verfahren zur Herstellung eines optischen Abbildungssystems
SG10201405231YA (en) 2003-05-06 2014-09-26 Nippon Kogaku Kk Projection optical system, exposure apparatus, and exposure method
JP2005064310A (ja) 2003-08-18 2005-03-10 Nikon Corp 光学系の収差調整方法、光学系、露光装置および露光方法
JP5629050B2 (ja) 2004-06-10 2014-11-19 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィ投影露光装置のための投影対物レンズ
EP1746463A2 (de) 2005-07-01 2007-01-24 Carl Zeiss SMT AG Verfahren zum Korrigieren eines lithographischen Projektionsobjektivs und derartiges Projektionsobjektiv

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010007379A (ko) * 1999-06-14 2001-01-26 미다라이 후지오 투영광학시스템 및 이를 이용한 투영노광장치

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Publication number Publication date
US9280058B2 (en) 2016-03-08
EP1754110B1 (en) 2008-07-30
US20150055109A1 (en) 2015-02-26
US20120033296A1 (en) 2012-02-09
US9588445B2 (en) 2017-03-07
US8064041B2 (en) 2011-11-22
US20180373155A1 (en) 2018-12-27
WO2005121899A1 (en) 2005-12-22
KR20070020059A (ko) 2007-02-16
JP2008502012A (ja) 2008-01-24
US20160282729A1 (en) 2016-09-29
US8902407B2 (en) 2014-12-02
JP5629050B2 (ja) 2014-11-19
DE602005008591D1 (de) 2008-09-11
JP2013228751A (ja) 2013-11-07
US20170227853A1 (en) 2017-08-10
JP5681236B2 (ja) 2015-03-04
EP1754110A1 (en) 2007-02-21
KR20120130229A (ko) 2012-11-29
US9977338B2 (en) 2018-05-22
US20080123069A1 (en) 2008-05-29
KR101492266B1 (ko) 2015-02-11

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