KR101486116B1 - 산화구리 에칭 잔여물 제거 및 구리 전착 방지용 수성 산성 배합물 - Google Patents

산화구리 에칭 잔여물 제거 및 구리 전착 방지용 수성 산성 배합물 Download PDF

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Publication number
KR101486116B1
KR101486116B1 KR1020117010361A KR20117010361A KR101486116B1 KR 101486116 B1 KR101486116 B1 KR 101486116B1 KR 1020117010361 A KR1020117010361 A KR 1020117010361A KR 20117010361 A KR20117010361 A KR 20117010361A KR 101486116 B1 KR101486116 B1 KR 101486116B1
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South Korea
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weight
formulation
copper
water
fluoride
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Korean (ko)
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KR20110086813A (ko
Inventor
글렌 웨스트우드
성진 홍
상인 김
Original Assignee
아반토르 퍼포먼스 머티리얼스, 인크.
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Assigned to 아반토 퍼포먼스 머티리얼즈, 엘엘씨 reassignment 아반토 퍼포먼스 머티리얼즈, 엘엘씨 권리의 전부이전등록 Assignors: 아반토르 퍼포먼스 머티리얼스, 인크.
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/30—Amines; Substituted amines ; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/66—Non-ionic compounds
    • C11D1/72—Ethers of polyoxyalkylene glycols
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/02—Inorganic compounds ; Elemental compounds
    • C11D3/04—Water-soluble compounds
    • C11D3/042—Acids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/24—Organic compounds containing halogen
    • C11D3/245—Organic compounds containing halogen containing fluorine
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/33—Amino carboxylic acids
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/23—Cleaning during device manufacture during, before or after processing of insulating materials
    • H10P70/234—Cleaning during device manufacture during, before or after processing of insulating materials the processing being the formation of vias or contact holes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Detergent Compositions (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
KR1020117010361A 2008-10-09 2009-10-06 산화구리 에칭 잔여물 제거 및 구리 전착 방지용 수성 산성 배합물 Active KR101486116B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10409808P 2008-10-09 2008-10-09
US61/104,098 2008-10-09
PCT/US2009/059603 WO2010042457A1 (en) 2008-10-09 2009-10-06 Aqueous acidic formulations for copper oxide etch residue removal and prevention of copper electrodeposition

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020147025882A Division KR101521066B1 (ko) 2008-10-09 2009-10-06 산화구리 에칭 잔여물 제거 및 구리 전착 방지용 수성 산성 배합물

Publications (2)

Publication Number Publication Date
KR20110086813A KR20110086813A (ko) 2011-08-01
KR101486116B1 true KR101486116B1 (ko) 2015-01-28

Family

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Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020117010361A Active KR101486116B1 (ko) 2008-10-09 2009-10-06 산화구리 에칭 잔여물 제거 및 구리 전착 방지용 수성 산성 배합물
KR1020147025882A Active KR101521066B1 (ko) 2008-10-09 2009-10-06 산화구리 에칭 잔여물 제거 및 구리 전착 방지용 수성 산성 배합물

Family Applications After (1)

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KR1020147025882A Active KR101521066B1 (ko) 2008-10-09 2009-10-06 산화구리 에칭 잔여물 제거 및 구리 전착 방지용 수성 산성 배합물

Country Status (11)

Country Link
US (1) US8481472B2 (https=)
EP (1) EP2334774B1 (https=)
JP (1) JP5476388B2 (https=)
KR (2) KR101486116B1 (https=)
CN (1) CN102177230B (https=)
BR (1) BRPI0920545A2 (https=)
CA (1) CA2740027A1 (https=)
IL (1) IL212158A0 (https=)
MY (1) MY160647A (https=)
WO (1) WO2010042457A1 (https=)
ZA (1) ZA201103311B (https=)

Families Citing this family (7)

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Publication number Priority date Publication date Assignee Title
KR101486116B1 (ko) * 2008-10-09 2015-01-28 아반토르 퍼포먼스 머티리얼스, 인크. 산화구리 에칭 잔여물 제거 및 구리 전착 방지용 수성 산성 배합물
JP5519728B2 (ja) * 2011-05-17 2014-06-11 富士フイルム株式会社 エッチング方法及びこれに用いられるエッチング液、これを用いた半導体素子の製造方法
TWI572711B (zh) * 2012-10-16 2017-03-01 盟智科技股份有限公司 半導體製程用的清洗組成物及清洗方法
KR102377875B1 (ko) * 2015-10-07 2022-03-25 주식회사 이엔에프테크놀로지 유리기판 세정액 조성물
US11678433B2 (en) 2018-09-06 2023-06-13 D-Wave Systems Inc. Printed circuit board assembly for edge-coupling to an integrated circuit
US11647590B2 (en) 2019-06-18 2023-05-09 D-Wave Systems Inc. Systems and methods for etching of metals
US12033996B2 (en) 2019-09-23 2024-07-09 1372934 B.C. Ltd. Systems and methods for assembling processor systems

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WO2003006597A1 (en) 2001-07-09 2003-01-23 Mallinckrodt Baker Inc. Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility
US20060091355A1 (en) 2004-10-28 2006-05-04 Daikin Industries, Ltd. Solution and method for removing ashing residue in Cu/low-k multilevel interconnection structure
US20060172907A1 (en) 2005-02-01 2006-08-03 Samsung Electronics Co., Ltd. Microelectronic cleaning agent(s) and method(s) of fabricating semiconductor device(s) using the same

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WO2003006597A1 (en) 2001-07-09 2003-01-23 Mallinckrodt Baker Inc. Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility
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Also Published As

Publication number Publication date
US8481472B2 (en) 2013-07-09
JP5476388B2 (ja) 2014-04-23
BRPI0920545A2 (pt) 2015-12-29
IL212158A0 (en) 2011-06-30
KR20140120376A (ko) 2014-10-13
WO2010042457A1 (en) 2010-04-15
KR101521066B1 (ko) 2015-05-18
CN102177230B (zh) 2014-02-19
CA2740027A1 (en) 2010-04-15
JP2012505293A (ja) 2012-03-01
MY160647A (en) 2017-03-15
EP2334774A1 (en) 2011-06-22
US20110195887A1 (en) 2011-08-11
EP2334774B1 (en) 2014-03-05
ZA201103311B (en) 2012-01-25
KR20110086813A (ko) 2011-08-01
CN102177230A (zh) 2011-09-07

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